KR101006120B1 - 고밀도 세브론 ｆｉｎＦＥＴ 및 그 제조 방법 - Google Patents

고밀도 세브론 ｆｉｎＦＥＴ 및 그 제조 방법 Download PDF

Info

Publication number
KR101006120B1
KR101006120B1 KR1020087006130A KR20087006130A KR101006120B1 KR 101006120 B1 KR101006120 B1 KR 101006120B1 KR 1020087006130 A KR1020087006130 A KR 1020087006130A KR 20087006130 A KR20087006130 A KR 20087006130A KR 101006120 B1 KR101006120 B1 KR 101006120B1
Authority
KR
South Korea
Prior art keywords
fin
gate
longitudinal axis
layer
alignment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020087006130A
Other languages
English (en)
Korean (ko)
Other versions
KR20080056159A (ko
Inventor
조켄 바인트너
토마스 루드비히
에드워드 제이 노왁
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 인터내셔널 비지네스 머신즈 코포레이션
Publication of KR20080056159A publication Critical patent/KR20080056159A/ko
Application granted granted Critical
Publication of KR101006120B1 publication Critical patent/KR101006120B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020087006130A 2005-09-19 2006-09-19 고밀도 세브론 ｆｉｎＦＥＴ 및 그 제조 방법 Expired - Fee Related KR101006120B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/162,663 US7323374B2 (en) 2005-09-19 2005-09-19 Dense chevron finFET and method of manufacturing same
US11/162,663 2005-09-19

Publications (2)

Publication Number Publication Date
KR20080056159A KR20080056159A (ko) 2008-06-20
KR101006120B1 true KR101006120B1 (ko) 2011-01-07

Family

ID=37883218

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087006130A Expired - Fee Related KR101006120B1 (ko) 2005-09-19 2006-09-19 고밀도 세브론 ｆｉｎＦＥＴ 및 그 제조 방법

Country Status (7)

Country Link
US (2) US7323374B2 (https=)
EP (1) EP1935020A4 (https=)
JP (1) JP5203948B2 (https=)
KR (1) KR101006120B1 (https=)
CN (1) CN101836280A (https=)
TW (1) TW200729408A (https=)
WO (1) WO2007035788A2 (https=)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253650B2 (en) * 2004-05-25 2007-08-07 International Business Machines Corporation Increase productivity at wafer test using probe retest data analysis
EP1804282A1 (en) * 2005-12-29 2007-07-04 Interuniversitair Microelektronica Centrum vzw ( IMEC) Methods for manufacturing dense integrated circuits
US7510939B2 (en) * 2006-01-31 2009-03-31 International Business Machines Corporation Microelectronic structure by selective deposition
US7902074B2 (en) * 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US7498265B2 (en) * 2006-10-04 2009-03-03 Micron Technology, Inc. Epitaxial silicon growth
US8735990B2 (en) * 2007-02-28 2014-05-27 International Business Machines Corporation Radiation hardened FinFET
US7612405B2 (en) * 2007-03-06 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Fabrication of FinFETs with multiple fin heights
US7560785B2 (en) * 2007-04-27 2009-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having multiple fin heights
US7847320B2 (en) * 2007-11-14 2010-12-07 International Business Machines Corporation Dense chevron non-planar field effect transistors and method
US7759179B2 (en) 2008-01-31 2010-07-20 International Business Machines Corporation Multi-gated, high-mobility, density improved devices
US20090283829A1 (en) * 2008-05-13 2009-11-19 International Business Machines Corporation Finfet with a v-shaped channel
DE102008030864B4 (de) * 2008-06-30 2010-06-17 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement als Doppelgate- und Tri-Gatetransistor, die auf einem Vollsubstrat aufgebaut sind und Verfahren zur Herstellung des Transistors
KR101037522B1 (ko) * 2008-09-19 2011-05-26 주식회사 하이닉스반도체 경사진 실리콘 격자구조의 웨이퍼
US7829951B2 (en) * 2008-11-06 2010-11-09 Qualcomm Incorporated Method of fabricating a fin field effect transistor (FinFET) device
JP2010206112A (ja) * 2009-03-05 2010-09-16 Renesas Electronics Corp 半導体装置
US20100308409A1 (en) * 2009-06-08 2010-12-09 Globalfoundries Inc. Finfet structures with fins having stress-inducing caps and methods for fabricating the same
US8980719B2 (en) 2010-04-28 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for doping fin field-effect transistors
US8482073B2 (en) * 2010-03-25 2013-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including FINFETs and methods for forming the same
US8629478B2 (en) * 2009-07-31 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure for high mobility multiple-gate transistor
US8440517B2 (en) 2010-10-13 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
US8227304B2 (en) * 2010-02-23 2012-07-24 International Business Machines Corporation Semiconductor-on-insulator (SOI) structure and method of forming the SOI structure using a bulk semiconductor starting wafer
US9000525B2 (en) 2010-05-19 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for alignment marks
JP2012023212A (ja) * 2010-07-14 2012-02-02 Sumitomo Electric Ind Ltd 半導体装置
US8617937B2 (en) * 2010-09-21 2013-12-31 International Business Machines Corporation Forming narrow fins for finFET devices using asymmetrically spaced mandrels
US8769446B2 (en) * 2010-11-12 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for increasing fin device density for unaligned fins
US8633076B2 (en) * 2010-11-23 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for adjusting fin width in integrated circuitry
US8431453B2 (en) 2011-03-31 2013-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure
US9190261B2 (en) * 2011-08-25 2015-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Layer alignment in FinFET fabrication
US9496178B2 (en) * 2011-08-31 2016-11-15 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor device having fins of different heights and method for manufacturing the same
US8723341B2 (en) * 2011-12-21 2014-05-13 Nan Ya Technology Corporation Alignment mark and method of manufacturing the same
US8629038B2 (en) * 2012-01-05 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with vertical fins and methods for forming the same
US8669186B2 (en) * 2012-01-26 2014-03-11 Globalfoundries Inc. Methods of forming SRAM devices using sidewall image transfer techniques
US8741776B2 (en) * 2012-02-07 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process for fin-like field effect transistor (finFET) device
JP2013197342A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 半導体装置および半導体装置の製造方法
KR101908980B1 (ko) 2012-04-23 2018-10-17 삼성전자주식회사 전계 효과 트랜지스터
US8741701B2 (en) 2012-08-14 2014-06-03 International Business Machines Corporation Fin structure formation including partial spacer removal
US8716133B2 (en) 2012-08-23 2014-05-06 International Business Machines Corporation Three photomask sidewall image transfer method
US9318330B2 (en) 2012-12-27 2016-04-19 Renesas Electronics Corporation Patterning process method for semiconductor devices
US9034716B2 (en) * 2013-01-31 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
US20130140638A1 (en) * 2013-02-04 2013-06-06 International Business Machines Corporation High density six transistor finfet sram cell layout
US9123654B2 (en) * 2013-02-15 2015-09-01 International Business Machines Corporation Trilayer SIT process with transfer layer for FINFET patterning
US8932957B2 (en) * 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a FinFET device
US9153478B2 (en) 2013-03-15 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Spacer etching process for integrated circuit design
US9064813B2 (en) 2013-04-19 2015-06-23 International Business Machines Corporation Trench patterning with block first sidewall image transfer
US8859355B1 (en) * 2013-05-06 2014-10-14 International Business Machines Corporation Method to make dual material finFET on same substrate
US9412664B2 (en) 2013-05-06 2016-08-09 International Business Machines Corporation Dual material finFET on single substrate
US9136106B2 (en) * 2013-12-19 2015-09-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
CN103824799B (zh) * 2014-03-05 2016-06-08 上海华虹宏力半导体制造有限公司 对准结构及晶圆
US9209179B2 (en) 2014-04-15 2015-12-08 Samsung Electronics Co., Ltd. FinFET-based semiconductor device with dummy gates
US9263586B2 (en) 2014-06-06 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure
US9331073B2 (en) * 2014-09-26 2016-05-03 International Business Machines Corporation Epitaxially grown quantum well finFETs for enhanced pFET performance
EP3238265A4 (en) * 2014-12-23 2018-08-08 Intel Corporation Uniform layers formed with aspect ratio trench based processes
US9455274B2 (en) * 2015-01-30 2016-09-27 International Business Machines Corporation Replacement fin process in SSOI wafer
US9496399B2 (en) * 2015-04-02 2016-11-15 International Business Machines Corporation FinFET devices with multiple channel lengths
US10115726B2 (en) * 2016-01-29 2018-10-30 Tokyo Electron Limited Method and system for forming memory fin patterns
US9666582B1 (en) * 2016-08-08 2017-05-30 Globalfoundries Inc. On-chip finFET structures to implement physical unclonable function for security application
US10229832B2 (en) * 2016-09-22 2019-03-12 Varian Semiconductor Equipment Associates, Inc. Techniques for forming patterned features using directional ions
WO2018130899A1 (en) * 2017-01-11 2018-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device
US10504906B2 (en) * 2017-12-04 2019-12-10 Globalfoundries Inc. FinFET SRAM layout and method of making the same
DE112021007344T5 (de) * 2021-03-23 2024-01-04 Mitsubishi Electric Corporation Halbleitereinheit und verfahren zur herstellung derselben

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050085052A (ko) * 2002-12-19 2005-08-29 인터내셔널 비지네스 머신즈 코포레이션 조밀한 이중 평면 디바이스

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2940553B2 (ja) * 1988-12-21 1999-08-25 株式会社ニコン 露光方法
US5231319A (en) * 1991-08-22 1993-07-27 Ncr Corporation Voltage variable delay circuit
US6288431B1 (en) * 1997-04-04 2001-09-11 Nippon Steel Corporation Semiconductor device and a method of manufacturing the same
US6380007B1 (en) * 1998-12-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US6967140B2 (en) * 2000-03-01 2005-11-22 Intel Corporation Quantum wire gate device and method of making same
JP3970546B2 (ja) * 2001-04-13 2007-09-05 沖電気工業株式会社 半導体装置及び半導体装置の製造方法
US6657259B2 (en) * 2001-12-04 2003-12-02 International Business Machines Corporation Multiple-plane FinFET CMOS
US6967351B2 (en) * 2001-12-04 2005-11-22 International Business Machines Corporation Finfet SRAM cell using low mobility plane for cell stability and method for forming
US6664582B2 (en) * 2002-04-12 2003-12-16 International Business Machines Corporation Fin memory cell and method of fabrication
KR100481209B1 (ko) * 2002-10-01 2005-04-08 삼성전자주식회사 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법
US6706571B1 (en) * 2002-10-22 2004-03-16 Advanced Micro Devices, Inc. Method for forming multiple structures in a semiconductor device
US6842048B2 (en) * 2002-11-22 2005-01-11 Advanced Micro Devices, Inc. Two transistor NOR device
US6885055B2 (en) * 2003-02-04 2005-04-26 Lee Jong-Ho Double-gate FinFET device and fabricating method thereof
US6909151B2 (en) * 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
JP3927165B2 (ja) * 2003-07-03 2007-06-06 株式会社東芝 半導体装置
US20070187682A1 (en) * 2003-08-28 2007-08-16 Nec Corporation Semiconductor device having fin-type effect transistor
US6867460B1 (en) * 2003-11-05 2005-03-15 International Business Machines Corporation FinFET SRAM cell with chevron FinFET logic
US7018551B2 (en) * 2003-12-09 2006-03-28 International Business Machines Corporation Pull-back method of forming fins in FinFets
KR100702552B1 (ko) * 2003-12-22 2007-04-04 인터내셔널 비지네스 머신즈 코포레이션 이중 게이트 ＦｉｎＦＥＴ 디자인을 위한 자동화 레이어생성 방법 및 장치
US7186599B2 (en) * 2004-01-12 2007-03-06 Advanced Micro Devices, Inc. Narrow-body damascene tri-gate FinFET
US7332386B2 (en) * 2004-03-23 2008-02-19 Samsung Electronics Co., Ltd. Methods of fabricating fin field transistors
US7084461B2 (en) * 2004-06-11 2006-08-01 International Business Machines Corporation Back gate FinFET SRAM

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050085052A (ko) * 2002-12-19 2005-08-29 인터내셔널 비지네스 머신즈 코포레이션 조밀한 이중 평면 디바이스

Also Published As

Publication number Publication date
EP1935020A4 (en) 2009-08-12
CN101836280A (zh) 2010-09-15
US7323374B2 (en) 2008-01-29
WO2007035788A3 (en) 2008-11-20
WO2007035788A2 (en) 2007-03-29
TW200729408A (en) 2007-08-01
JP5203948B2 (ja) 2013-06-05
US8963294B2 (en) 2015-02-24
JP2009509344A (ja) 2009-03-05
KR20080056159A (ko) 2008-06-20
EP1935020A2 (en) 2008-06-25
US20080006852A1 (en) 2008-01-10
US20070063276A1 (en) 2007-03-22

Similar Documents

Publication Publication Date Title
KR101006120B1 (ko) 고밀도 세브론 ｆｉｎＦＥＴ 및 그 제조 방법
US8114723B2 (en) Method of forming multi-high-density memory devices and architectures
US7638843B2 (en) Integrating high performance and low power multi-gate devices
JP4518180B2 (ja) 半導体装置、および、その製造方法
KR101070845B1 (ko) ＦｉｎＦＥＴ 디바이스 구조의 형성 방법
US8192641B2 (en) Methods for fabricating non-planar electronic devices having sidewall spacers formed adjacent selected surfaces
US8866206B2 (en) Integrated circuit device and method for manufacturing same
CN100576537C (zh) FinFET结构及其形成方法
US11081354B2 (en) Fin patterning methods for increased process margins
EP2013901A2 (en) Patterning sub-lithographic features with variable widths
CN102013412A (zh) 形成场效晶体管的方法及形成集成电路的方法
US10096522B2 (en) Dummy MOL removal for performance enhancement
US9378973B1 (en) Method of using sidewall image transfer process to form fin-shaped structures
US20220367678A1 (en) Semiconductor device with fin end spacer dummy gate and method of manufacturing the same
KR100527577B1 (ko) 반도체소자의 제조방법
US20070257319A1 (en) Integrating high performance and low power multi-gate devices
TW202425229A (zh) 形成於基板兩側之閘極環繞式(gaa)場效電晶體(fets)
US11830737B2 (en) Semiconductor device and method of fabricating the same
KR20200132183A (ko) 반도체 장치 및 그 제조 방법
KR100307558B1 (ko) 반도체소자의 제조방법
KR20100055731A (ko) 레티클 및 반도체 소자의 형성 방법
US20180006154A1 (en) Semiconductor device including optimized elastic strain buffer
US20170250181A1 (en) Finfet device with enlarged channel regions
CN119384035A (zh) 半导体结构及其形成方法
KR19990055807A (ko) 반도체 소자의 콘택 형성방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20131128

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20141128

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20151201

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20161129

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20181230

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20181230

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000