CN101836280A - 致密山形鳍状场效应晶体管以及其制造方法 - Google Patents

致密山形鳍状场效应晶体管以及其制造方法 Download PDF

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Publication number
CN101836280A
CN101836280A CN200680034288.8A CN200680034288A CN101836280A CN 101836280 A CN101836280 A CN 101836280A CN 200680034288 A CN200680034288 A CN 200680034288A CN 101836280 A CN101836280 A CN 101836280A
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CN
China
Prior art keywords
fin
longitudinal axis
gate
alignment
grid
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Pending
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CN200680034288.8A
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English (en)
Chinese (zh)
Inventor
J·拜因特内尔
T·路德维希
E·J·诺瓦克
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International Business Machines Corp
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International Business Machines Corp
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Publication of CN101836280A publication Critical patent/CN101836280A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/011—Manufacture or treatment comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200680034288.8A 2005-09-19 2006-09-19 致密山形鳍状场效应晶体管以及其制造方法 Pending CN101836280A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/162,663 US7323374B2 (en) 2005-09-19 2005-09-19 Dense chevron finFET and method of manufacturing same
US11/162,663 2005-09-19
PCT/US2006/036575 WO2007035788A2 (en) 2005-09-19 2006-09-19 DENSE CHEVRON finFET AND METHOD OF MANUFACTURING SAME

Publications (1)

Publication Number Publication Date
CN101836280A true CN101836280A (zh) 2010-09-15

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Family Applications (1)

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CN200680034288.8A Pending CN101836280A (zh) 2005-09-19 2006-09-19 致密山形鳍状场效应晶体管以及其制造方法

Country Status (7)

Country Link
US (2) US7323374B2 (https=)
EP (1) EP1935020A4 (https=)
JP (1) JP5203948B2 (https=)
KR (1) KR101006120B1 (https=)
CN (1) CN101836280A (https=)
TW (1) TW200729408A (https=)
WO (1) WO2007035788A2 (https=)

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CN102479754A (zh) * 2010-11-23 2012-05-30 台湾积体电路制造股份有限公司 调节集成电路中鳍片宽度的方法
CN103824799A (zh) * 2014-03-05 2014-05-28 上海华虹宏力半导体制造有限公司 对准结构及晶圆
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Cited By (5)

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Publication number Priority date Publication date Assignee Title
CN102468182A (zh) * 2010-11-12 2012-05-23 台湾积体电路制造股份有限公司 用于增加未对准鳍的鳍式器件密度的方法和器件
CN102479754A (zh) * 2010-11-23 2012-05-30 台湾积体电路制造股份有限公司 调节集成电路中鳍片宽度的方法
TWI502687B (zh) * 2012-01-26 2015-10-01 Globalfoundries Us Inc 使用側壁影像移轉技術形成靜態隨機存取記憶體設備之方法
CN103824799A (zh) * 2014-03-05 2014-05-28 上海华虹宏力半导体制造有限公司 对准结构及晶圆
CN103824799B (zh) * 2014-03-05 2016-06-08 上海华虹宏力半导体制造有限公司 对准结构及晶圆

Also Published As

Publication number Publication date
EP1935020A4 (en) 2009-08-12
US7323374B2 (en) 2008-01-29
WO2007035788A3 (en) 2008-11-20
WO2007035788A2 (en) 2007-03-29
TW200729408A (en) 2007-08-01
KR101006120B1 (ko) 2011-01-07
JP5203948B2 (ja) 2013-06-05
US8963294B2 (en) 2015-02-24
JP2009509344A (ja) 2009-03-05
KR20080056159A (ko) 2008-06-20
EP1935020A2 (en) 2008-06-25
US20080006852A1 (en) 2008-01-10
US20070063276A1 (en) 2007-03-22

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Application publication date: 20100915