KR100958126B1 - 레지스트 조성물 - Google Patents

레지스트 조성물 Download PDF

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Publication number
KR100958126B1
KR100958126B1 KR1020030059746A KR20030059746A KR100958126B1 KR 100958126 B1 KR100958126 B1 KR 100958126B1 KR 1020030059746 A KR1020030059746 A KR 1020030059746A KR 20030059746 A KR20030059746 A KR 20030059746A KR 100958126 B1 KR100958126 B1 KR 100958126B1
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KR
South Korea
Prior art keywords
group
resin
resist composition
general formula
repeating unit
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Expired - Lifetime
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KR1020030059746A
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English (en)
Korean (ko)
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KR20040030278A (ko
Inventor
사토겐이치로
Original Assignee
후지필름 가부시키가이샤
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Publication of KR20040030278A publication Critical patent/KR20040030278A/ko
Application granted granted Critical
Publication of KR100958126B1 publication Critical patent/KR100958126B1/ko
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020030059746A 2002-09-05 2003-08-28 레지스트 조성물 Expired - Lifetime KR100958126B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002260191A JP4031327B2 (ja) 2002-09-05 2002-09-05 レジスト組成物
JPJP-P-2002-00260191 2002-09-05

Publications (2)

Publication Number Publication Date
KR20040030278A KR20040030278A (ko) 2004-04-09
KR100958126B1 true KR100958126B1 (ko) 2010-05-18

Family

ID=32260979

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030059746A Expired - Lifetime KR100958126B1 (ko) 2002-09-05 2003-08-28 레지스트 조성물

Country Status (2)

Country Link
JP (1) JP4031327B2 (https=)
KR (1) KR100958126B1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4260772B2 (ja) * 2003-01-31 2009-04-30 東京応化工業株式会社 レジスト組成物の評価方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP2005300998A (ja) 2004-04-13 2005-10-27 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP2006003781A (ja) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP4663456B2 (ja) * 2005-09-05 2011-04-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
TW200916965A (en) 2007-10-01 2009-04-16 Jsr Corp Radiation-sensitive composition
US8697804B1 (en) 2008-01-24 2014-04-15 E I Du Pont De Nemours And Company Nucleated poly(trimethylene terephthalate)
TWI533082B (zh) 2008-09-10 2016-05-11 Jsr股份有限公司 敏輻射性樹脂組成物
CN102150083B (zh) * 2008-09-12 2013-09-04 Jsr株式会社 放射线敏感性树脂组合物及抗蚀剂图案形成方法
WO2012043684A1 (ja) 2010-09-29 2012-04-05 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
JP6004869B2 (ja) * 2012-09-28 2016-10-12 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP6473502B2 (ja) * 2015-05-29 2019-02-20 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び上層膜形成用組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000330287A (ja) 1998-08-06 2000-11-30 Toshiba Corp レジスト用樹脂、レジスト組成物およびそれを用いたパターン形成方法
JP2002040661A (ja) * 2000-07-24 2002-02-06 Toray Ind Inc ポジ型感放射線性組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4046452B2 (ja) * 1999-12-06 2008-02-13 ダイセル化学工業株式会社 フォトレジスト用重合性不飽和化合物、及びフォトレジスト用樹脂組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000330287A (ja) 1998-08-06 2000-11-30 Toshiba Corp レジスト用樹脂、レジスト組成物およびそれを用いたパターン形成方法
JP2002040661A (ja) * 2000-07-24 2002-02-06 Toray Ind Inc ポジ型感放射線性組成物

Also Published As

Publication number Publication date
JP4031327B2 (ja) 2008-01-09
JP2004101642A (ja) 2004-04-02
KR20040030278A (ko) 2004-04-09

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