KR100957735B1 - 로듐 및 이리듐 착체 - Google Patents
로듐 및 이리듐 착체 Download PDFInfo
- Publication number
- KR100957735B1 KR100957735B1 KR1020047006960A KR20047006960A KR100957735B1 KR 100957735 B1 KR100957735 B1 KR 100957735B1 KR 1020047006960 A KR1020047006960 A KR 1020047006960A KR 20047006960 A KR20047006960 A KR 20047006960A KR 100957735 B1 KR100957735 B1 KR 100957735B1
- Authority
- KR
- South Korea
- Prior art keywords
- different
- same
- formula
- process according
- carbon atoms
- Prior art date
Links
- 229910052703 rhodium Inorganic materials 0.000 title claims description 11
- 239000010948 rhodium Substances 0.000 title description 9
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 title description 5
- 150000002503 iridium Chemical class 0.000 title 1
- 150000001875 compounds Chemical class 0.000 claims abstract description 34
- 239000003795 chemical substances by application Substances 0.000 claims description 25
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 20
- 229910052741 iridium Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- -1 organic acid halides Chemical class 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- FKLJPTJMIBLJAV-UHFFFAOYSA-N Compound IV Chemical compound O1N=C(C)C=C1CCCCCCCOC1=CC=C(C=2OCCN=2)C=C1 FKLJPTJMIBLJAV-UHFFFAOYSA-N 0.000 claims description 8
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- NLFBCYMMUAKCPC-KQQUZDAGSA-N ethyl (e)-3-[3-amino-2-cyano-1-[(e)-3-ethoxy-3-oxoprop-1-enyl]sulfanyl-3-oxoprop-1-enyl]sulfanylprop-2-enoate Chemical compound CCOC(=O)\C=C\SC(=C(C#N)C(N)=O)S\C=C\C(=O)OCC NLFBCYMMUAKCPC-KQQUZDAGSA-N 0.000 claims description 8
- 238000005160 1H NMR spectroscopy Methods 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 150000007522 mineralic acids Chemical class 0.000 claims description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 5
- 239000002841 Lewis acid Substances 0.000 claims description 4
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 claims description 4
- 150000007517 lewis acids Chemical class 0.000 claims description 4
- CTSLXHKWHWQRSH-UHFFFAOYSA-N oxalyl chloride Chemical compound ClC(=O)C(Cl)=O CTSLXHKWHWQRSH-UHFFFAOYSA-N 0.000 claims description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 claims description 4
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 4
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 3
- 125000001072 heteroaryl group Chemical group 0.000 claims description 3
- 238000004128 high performance liquid chromatography Methods 0.000 claims description 3
- 125000002950 monocyclic group Chemical group 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 125000003367 polycyclic group Chemical group 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 239000001273 butane Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- JIKUXBYRTXDNIY-UHFFFAOYSA-N n-methyl-n-phenylformamide Chemical compound O=CN(C)C1=CC=CC=C1 JIKUXBYRTXDNIY-UHFFFAOYSA-N 0.000 claims description 2
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 claims description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims 1
- XJEXEHVVOJVZMN-UHFFFAOYSA-N bis(chloromethoxy)methane Chemical compound ClCOCOCCl XJEXEHVVOJVZMN-UHFFFAOYSA-N 0.000 claims 1
- 239000001294 propane Substances 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 abstract description 4
- 239000004480 active ingredient Substances 0.000 abstract description 2
- 239000008204 material by function Substances 0.000 abstract 1
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 18
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000007983 Tris buffer Substances 0.000 description 7
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 6
- 239000012074 organic phase Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 5
- 238000006170 formylation reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000012429 reaction media Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 230000022244 formylation Effects 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 3
- 235000019341 magnesium sulphate Nutrition 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 2
- QMDIZIDCORWBJK-UHFFFAOYSA-N 1,3-dichloro-2-(1,3-dichloropropan-2-yloxy)propane Chemical compound ClCC(CCl)OC(CCl)CCl QMDIZIDCORWBJK-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical compound CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 1
- ZPQOPVIELGIULI-UHFFFAOYSA-N 1,3-dichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1 ZPQOPVIELGIULI-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- 238000006418 Brown reaction Methods 0.000 description 1
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000006052 Horner reaction Methods 0.000 description 1
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000002262 Schiff base Substances 0.000 description 1
- 150000004753 Schiff bases Chemical class 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical class [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000011097 chromatography purification Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- GRTGGSXWHGKRSB-UHFFFAOYSA-N dichloromethyl methyl ether Chemical compound COC(Cl)Cl GRTGGSXWHGKRSB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007336 electrophilic substitution reaction Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNKYTQGIUYNRMY-UHFFFAOYSA-N methoxypropane Chemical compound CCCOC VNKYTQGIUYNRMY-UHFFFAOYSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- BALRIWPTGHDDFF-UHFFFAOYSA-N rhodium Chemical compound [Rh].[Rh] BALRIWPTGHDDFF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012258 stirred mixture Substances 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0033—Iridium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0073—Rhodium compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Pyridine Compounds (AREA)
- Plural Heterocyclic Compounds (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
Abstract
Description
Claims (19)
- 하기 화학식 I 또는 II 에 따른 화합물:[화학식 I][화학식 II][식중, 기호 및 지수는 하기의 의미를 갖는다:M 은 Rh 또는 Ir 이고;Y 는 동일하거나 상이하고, O, S 또는 Se 이고;R 은 동일하거나 상이하고, 각각은 H, F, Cl, Br, NO2, CN, 탄소수 1 내지 20 의 직쇄 또는 분지쇄 또는 시클릭 알킬 또는 알콕시기 (여기에서, 하나 이상의 인접하지 않는 CH2 기는 -O-, -S-, -NR1- 또는 -CONR2 로 대체될 수 있고, 하나 이상의 H 원자는 F 로 대체될 수 있다), 또는 하나 이상의 비방향족 라디칼 R3 로 치환될 수 있는 탄소수 4 내지 14 의 아릴 또는 헤테로아릴기이고; 복수의 치환기 R 은 함께 둘 다 동일한 고리 및 두 개의 상이한 고리에서 추가의 모노- 또는 폴리-시클릭 고리계를 차례로 형성할 수 있고;R1 및 R2 는 동일하거나 상이하고, H 또는 탄소수 1 내지 20 의 지방족 또는 방향족 탄화수소 라디칼이고;R3 는 H, F, Cl, Br, NO2, CN 또는 탄소수 1 내지 20 의 직쇄 또는 분지쇄 또는 시클릭 알킬 또는 알콕시기 (여기에서, 하나 이상의 인접하지 않는 CH2 기는 -O-, -S-, -NR1- 또는 -CONR2 로 대체될 수 있고, 하나 이상의 H 원자는 F 로 대체될 수 있다) 로부터 선택되는 비방향족 라디칼이고;a 는 동일하거나 상이하고, 0, 1, 2, 3 또는 4 이고;b 는 동일하거나 상이하고, 0, 1, 2 또는 3 이고;n 은 1, 2 또는 3 이다].
- 하기 화학식 Ia 또는 IIa 에 따른 화합물:[화학식 Ia][화학식 IIa][식중, 기호 및 지수는 하기의 의미를 갖는다:M 은 Rh 또는 Ir 이고;Y 는 동일하거나 상이하고 O, S 또는 Se 이고;R 은 동일하거나 상이하고, 각각은 H, F, Cl, Br, NO2, CN, 탄소수 1 내지 20 의 직쇄 또는 분지쇄 또는 시클릭 알킬 또는 알콕시기 (여기에서 하나 이상의 인접하지 않는 CH2 기는 -O-, -S-, -NR1- 또는 -CONR2 로 대체될 수 있고, 하나 이상의 H 원자는 F 로 대체될 수 있다), 또는 하나 이상의 비방향족 라디칼 R3 로 치환될 수 있는 탄소수 4 내지 14 의 아릴 또는 헤테로아릴기이고; 복수의 치환기 R 은 함께 둘 다 동일한 고리 및 두 개의 상이한 고리에서 추가의 모노- 또는 폴리-시클릭 고리계를 차례로 형성할 수 있고;R1 및 R2 는 동일하거나 상이하고, H 또는 탄소수 1 내지 20 의 지방족 또는 방향족 탄화수소 라디칼이고;R3 는 H, F, Cl, Br, NO2, CN 또는 탄소수 1 내지 20 의 직쇄 또는 분지쇄 또는 시클릭 알킬 또는 알콕시기 (여기에서, 하나 이상의 인접하지 않는 CH2 기는 -O-, -S-, -NR1- 또는 -CONR2 로 대체될 수 있고, 하나 이상의 H 원자는 F 로 대체될 수 있다) 로부터 선택되는 비방향족 라디칼이고;a 는 동일하거나 상이하고, 0, 1, 2, 3 또는 4 이고;b 는 동일하거나 상이하고, 0, 1, 2 또는 3 이고;n 은 1, 2 또는 3 이다].
- 제 3 항에 있어서, 포르밀화제로서 1:1 내지 100:1 의 비율로의 포름아미드와 무기 또는 유기 산 할라이드가 사용되는 것을 특징으로 하는 방법.
- 제 4 항에 있어서, 포름아미드로서 N-메틸-포름아미드 (MFA), N,N-디메틸-포름아미드 (DMF) 또는 N-메틸-포름아닐리드가 사용되는 것을 특징으로 하는 방법.
- 제 4 항 또는 제 5 항에 있어서, 무기 또는 유기 산 할라이드로서 인 옥시드 트리클로라이드, 티오닐 클로라이드, 술푸릴 클로라이드 또는 옥살릴 클로라이드가 사용되는 것을 특징으로 하는 방법.
- 제 3 항에 있어서, 포르밀화제로서 1:1 내지 1:4 의 비율로의 유기 디할로메틸 에테르 및 루이스산이 사용되는 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 디할로메틸 에테르로서 1,1-디클로로메톡시-메탄, -에탄, -프로판 또는 -부탄이 사용되는 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 루이스산으로서 티타늄(IV) 클로라이드, 주석(IV) 클로라이드 또는 알루미늄(III) 클로라이드가 사용되는 것을 특징으로 하는 방법.
- 제 3 항에 있어서, 화합물 III 또는 IV 에 대한 제 4 항 또는 제 7 항에 따 른 포르밀화제의 화학정량적 비율이 1:1 로 사용되는 것을 특징으로 하는 방법.
- 제 3 항에 있어서, 화합물 III 또는 IV 에 대한 제 4 항 또는 제 7 항에 따른 포르밀화제의 화학정량적 비율이 2:1 로 사용되는 것을 특징으로 하는 방법.
- 제 3 항에 있어서, 화합물 III 또는 IV 에 대한 제 4 항 또는 제 7 항에 따른 포르밀화제의 화학정량적 비율이 3:1 내지 100:1 로 사용되는 것을 특징으로 하는 방법.
- 제 1 항 또는 제 2 항에 있어서, 1H-NMR 또는 HPLC 에 의해 결정된 이들의 순도가 99% 초과인 것을 특징으로 하는 화합물.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10155064A DE10155064A1 (de) | 2001-11-09 | 2001-11-09 | Rhodium- und Iridium-Komplexe |
DE10155064.2 | 2001-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050044363A KR20050044363A (ko) | 2005-05-12 |
KR100957735B1 true KR100957735B1 (ko) | 2010-05-12 |
Family
ID=7705179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047006960A KR100957735B1 (ko) | 2001-11-09 | 2002-11-07 | 로듐 및 이리듐 착체 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7560554B2 (ko) |
EP (1) | EP1448577B1 (ko) |
JP (1) | JP4537064B2 (ko) |
KR (1) | KR100957735B1 (ko) |
CN (1) | CN100526323C (ko) |
DE (2) | DE10155064A1 (ko) |
WO (1) | WO2003040160A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004093207A2 (de) * | 2003-04-15 | 2004-10-28 | Covion Organic Semiconductors Gmbh | Mischungen von organischen zur emission befähigten halbleitern und matrixmaterialien, deren verwendung und elektronikbauteile enthaltend diese mischungen |
US7880379B2 (en) | 2003-11-25 | 2011-02-01 | Merck Patent Gmbh | Phosphorescent organic electroluminescent device having no hole transporting layer |
TW200634020A (en) * | 2004-12-09 | 2006-10-01 | Merck Patent Gmbh | Metal complexes |
JP2013527980A (ja) * | 2010-04-12 | 2013-07-04 | メルク パテント ゲーエムベーハー | 改良された性能を有する組成物 |
WO2012066686A1 (ja) * | 2010-11-19 | 2012-05-24 | 学校法人東京理科大学 | 遷移金属錯体及びその用途 |
IN2014DN10757A (ko) * | 2012-05-29 | 2015-09-04 | Mitsubishi Gas Chemical Co | |
JP7064487B2 (ja) * | 2016-10-12 | 2022-05-10 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 金属錯体 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010019782A1 (en) * | 1999-12-27 | 2001-09-06 | Tatsuya Igarashi | Light-emitting material comprising orthometalated iridium complex, light-emitting device, high efficiency red light-emitting device, and novel iridium complex |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2286909T3 (es) * | 1998-09-25 | 2007-12-01 | Monsanto Company | Aril y heteroaril-heteroalquilamidas terciarias policiclicas sustituidas como inhibidoras de la actividad de la proteina de transferencia de ester de colesterol. |
JP3929690B2 (ja) * | 1999-12-27 | 2007-06-13 | 富士フイルム株式会社 | オルトメタル化イリジウム錯体からなる発光素子材料、発光素子および新規イリジウム錯体 |
DE60103442T3 (de) | 2000-03-31 | 2014-05-15 | Sumitomo Chemical Co. Ltd. | Polymerisches fluoreszentes Material, Verfahren zu ihrer Herstellung, und lumineszentes Polymergerät worin es eingesetzt wird |
DE10109027A1 (de) | 2001-02-24 | 2002-09-05 | Covion Organic Semiconductors | Rhodium- und Iridium-Komplexe |
-
2001
- 2001-11-09 DE DE10155064A patent/DE10155064A1/de not_active Withdrawn
-
2002
- 2002-11-07 KR KR1020047006960A patent/KR100957735B1/ko not_active IP Right Cessation
- 2002-11-07 EP EP02785365A patent/EP1448577B1/de not_active Expired - Lifetime
- 2002-11-07 WO PCT/EP2002/012416 patent/WO2003040160A1/de active IP Right Grant
- 2002-11-07 DE DE50207137T patent/DE50207137D1/de not_active Expired - Lifetime
- 2002-11-07 CN CNB028246047A patent/CN100526323C/zh not_active Expired - Fee Related
- 2002-11-07 JP JP2003542205A patent/JP4537064B2/ja not_active Expired - Fee Related
- 2002-11-07 US US10/494,585 patent/US7560554B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010019782A1 (en) * | 1999-12-27 | 2001-09-06 | Tatsuya Igarashi | Light-emitting material comprising orthometalated iridium complex, light-emitting device, high efficiency red light-emitting device, and novel iridium complex |
Also Published As
Publication number | Publication date |
---|---|
KR20050044363A (ko) | 2005-05-12 |
US20050176958A1 (en) | 2005-08-11 |
CN1602313A (zh) | 2005-03-30 |
DE50207137D1 (de) | 2006-07-20 |
CN100526323C (zh) | 2009-08-12 |
WO2003040160A1 (de) | 2003-05-15 |
EP1448577A1 (de) | 2004-08-25 |
DE10155064A1 (de) | 2003-05-28 |
JP4537064B2 (ja) | 2010-09-01 |
JP2005532255A (ja) | 2005-10-27 |
US7560554B2 (en) | 2009-07-14 |
EP1448577B1 (de) | 2006-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101271826B1 (ko) | 금속 착물 | |
US7423151B2 (en) | Method for the production of highly pure tris-ortho-metalated organo-iridium compounds | |
JP5198856B2 (ja) | 金属錯体 | |
KR100854610B1 (ko) | 로듐 및 이리듐 착체 | |
JP5341973B2 (ja) | 半導体高分子製品に有用な単量体の新規な製造 | |
US7589203B2 (en) | Rhodium and iridium complexes | |
US20120309971A1 (en) | Synthetic method of organometallic iridium compound | |
JP5294560B2 (ja) | 過アリール化ボランをベースとする、ポリマー燐光性有機半導体エミッター物質、その製法及びその使用 | |
US20070069197A1 (en) | Monomers, oligomers and polymers of 2-functionalized and 2,7-difunctionalized carbzoles | |
KR100957735B1 (ko) | 로듐 및 이리듐 착체 | |
JP4248926B2 (ja) | 多置換アセン誘導体及びその製造方法 | |
KR20090010865A (ko) | 신규한 적색 인광 화합물 및 이를 발광재료로서 채용하고있는 유기 전계 발광 소자 | |
CN108017675A (zh) | 一种双核有机金属配合物、其发光器件及应用 | |
KR20130058542A (ko) | 유기 반도체 화합물 및 이를 포함하는 유기 박막 | |
CN102325781A (zh) | 用于光电子装置的有机金属络合物 | |
CN114181263B (zh) | 含单碳硼烷阴离子铂配合物蓝光材料及其制备方法、应用 | |
JP2024045035A (ja) | インドロカルバゾール誘導体の製造方法 | |
JP2017210462A (ja) | ホウ素含有化合物、およびその用途 | |
CN115322229A (zh) | 一种有机电致磷光发光材料及其应用 | |
CN115010766A (zh) | 基于刚性配位的交叠型红光铱(iii)配合物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130419 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20140421 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20150417 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160418 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170421 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180418 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |