KR100947813B1 - Ｍｅｍｓ　장치의 구조를 제조하는 방법 - Google Patents

Ｍｅｍｓ　장치의 구조를 제조하는 방법 Download PDF

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KR100947813B1
KR100947813B1 KR1020047012516A KR20047012516A KR100947813B1 KR 100947813 B1 KR100947813 B1 KR 100947813B1 KR 1020047012516 A KR1020047012516 A KR 1020047012516A KR 20047012516 A KR20047012516 A KR 20047012516A KR 100947813 B1 KR100947813 B1 KR 100947813B1
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마일즈마크더블유
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0136—Growing or depositing of a covering layer

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Abstract

본 발명은 MEMS 장치를 제조하는데 사용될 수 있는 미세제조 방법을 제공한다. 이 방법은 베이스층 상에 하나의 층 또는 복수의 층을 증착하는 단계로서, 상기 하나의 층, 또는 상기 복수의 층의 최상층은 희생층인 증착 단계; 상기 하나의 층 또는 상기 복수의 층을 패터닝하여 상기 베이스층이 노광되는 하나 이상의 개구를 제공하는 단계; 상기 하나의 층 또는 상기 복수의 층위에 감광층을 증착하는 단계; 및 상기 하나 이상의 개구를 통하여 광을 통과시켜 상기 감광층을 노광시키는 단계를 포함한다.
Figure R1020047012516
MEMS 장치

Description

ＭＥＭＳ　장치의 구조를 제조하는 방법 {A METHOD FOR FABRICATING A STRUCTURE FOR A MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE}
발명의 분야
본 발명은 미세제조에 관한 것이다. 보다 상세하게는, 본 발명은 MEMS (Microelectromechanical Systems) 장치 구조의 미세제조에 관한 것이다.
배경
일반적으로, MEMS 장치들을 제조하는데 사용되는 미세제조 기술들은 기판 상에 하나 이상의 층을 증착하는 기술과 그 층들을 후속 패터닝하여 유용한 구조들을 생성하는 기술을 포함한다. 층을 패터닝하기 위한 하나의 기술은 포토리소그래피를 이용한다. 포토리소그래피에서, 포토 마스크 또는 광 마스크상의 원하는 패턴의 포토그래피 해상도는 상기 층의 표면 위에 패턴을 제공하는데 사용된다. MEMS 장치를 제조하는 경우에 통상적으로 수회의 마스킹 단계들이 요구되며, 각 마스킹 단계는 장치의 비용을 증가시킨다. 따라서, MEMS 장치의 제조 동안에 요구되는 마스킹 단계들의 개수를 감소시키는 것이 바람직하다.
본 발명의 개요
본 발명의 일 양태에 따르면, 기판 상에 제 1 층을 증착하는 단계; 그 제 1 층을 패터닝하는 단계; 그 제 1 층 상에 제 2 층을 증착하는 단계; 및 제 1 층을 포토 마스크로서 이용하여 제 2 층을 패터닝하는 단계를 포함하는 미세제조 방법을 제공한다.
도면의 간단한 설명
도 1 은 본 발명의 미세제조 방법을 이용하여 제조될 수도 있는 MEMS 장치의 부분의 3 차원 도면을 나타낸다.
도 2 내지 도 10 은 도 1 의 MEMS 장치의 제조시의 여러 단계들을 나타낸다.
상세한 설명
다음으로, 본 발명의 양태들을, 미국 특허 제 5,835,255 호에 개시된 가시 스펙트럼 변조기 어레이 또는 미국 특허 제 6,040,937 호에 개시된 IMOD (Interferometric Modulater) 와 같은 MEMS 장치의 제조 동안의 단계들을 나타내는 도면들 중 도 2 내지 도 10 을 참조하여 설명한다. 물론, 가시 스펙트럼 변조기 어레이 또는 IMOD 의 제조시의 단계들을 참조하여 본 발명을 설명하는 것은 본 발명의 이해를 증가시키기 위한 것이며, 본 발명을 다른 MEMS 장치들의 제조시에 사용할 수도 있음을 이해하여야 한다. 따라서, 가시 스펙트럼 변조기 어레이 또는 IMOD 의 제조를 참조한 본 발명의 설명은 제한적이지 않은 것으로 의도된다.
도면들 중 도 1 은 여기서 개시되는 기술들에 따라 제조될 수도 있는 가시 스펙트럼 변조기 어레이 (10) 의 부분의 예를 나타낸다. 도 1 을 참조하면, 안테나 어레이는, (a) 캐비티 자체의 치수 및 (b) 그 캐비티들내의 유전체 미러들의 주파수 응답에 따라 입사 전자계 방사의 특정 부분들을 투과 및 반사하는 미세제조된 간섭 캐비티의 절반 상에 제조된다. 도 1 에서, 투명 기판 (16) 상에 제조되는 2 개의 캐비티 (12, 14) 를 포함하는 어레이 (10) 를 나타낸다. 층 (18) 즉, 제 1 미러/도체는 금속, 옥사이드, 반도체, 및 투명 도체의 하나 이상의 피막의 결합물을 구비할 수도 있다. 절연 지지부 (20) 는 제 2 의 투명 도전막 (22) 을 지지한다. 각 어레이 엘리먼트는 그 막 (22) 상에 형성되는 안테나 어레이 (24) 를 갖는다. 2 개의 구조 (22, 24) 는 함께 제 2 미러/도체를 구비한다. 이와 반대로, 안테나 어레이는 제 1 미러/도체의 부분으로서 제조될 수도 있다. 제 2 미러/도체 (22/24) 는, 미구동된 상태에서 이것이 인장 강도하에 있고 기판에 대하여 평행하도록 제조되는 플렉시블막을 형성한다.
층들 (22, 24) 은 평행하기 때문에, 어레이 위 또는 아래로부터 임의의 캐비티에 입력되는 방사는 그 캐비티내에서 다중 반사되어, 광학 간섭을 발생시킨다. 안테나 어레이의 치수에 따라, 간섭은 그 반사 및/또는 투과 특성을 결정한다. 치수들 중 하나가 변화하면, 이 경우에 캐비티 높이 (즉, 층들 (18, 22) 의 내벽 사이의 공간) 는 광학 특성을 변경시킨다. 높이의 변화는 캐비티의 2 개의 층 양단에 전압을 인가하여 정전기력으로 인하여 층 (22) 을 가라앉게 함으로써 달성된다. 캐비티 (12) 는 가라앉은 상태 (7 볼트 인가) 를 도시하는 반면, 캐비티 (14) 는 가라앉지 않은 상태 (0 볼트 인가) 를 도시한다.
어레이 (10) 의 제조시에, 절연 지지부 (20) 들은 절연 지지부 (20) 들과 층 (18, 22) 들 사이에 접촉이 생기는 영역에 적절히 정의되어 있는 것이 바람직하다. 본 발명은 특히 이러한 지지부를 제조하는데 유용하다. 도 2 내지 도 10 은 이 지지부 (20) 들과 같은 지지부들을 갖는 MEMS 장치의 제조시의 여러 단계들을 나타낸다. 도면들 중 도 2 를 참조하면, 참조 부호 100 은 기판 (100) 을 나타낸다. 기판 (100) 은 각각 자외선에 투명한 많은 다른 재료들로 이루어질 수도 있다. 이 재료들의 예들은 플라스틱, 마일라 (mylar), 또는 석영을 포함한다. 재료는 반드시 평평하고 가느다랄 필요는 없지만, 광학적으로 매끄러운 것을 지지할 수 있어야 한다. 바람직한 재료로는 유리가 있고, 유리는 가시 범위에서 투과 및 반사될 수 있다.
기판 (100) 상에 여러 층들을 증착하여 스택을 정의한다. 특히, 기판 (100) 은 스퍼터링 또는 전자빔 증착과 같은 PVD (physical vapor deposition) 법과 같은 표준 기술들을 이용하여 희생층 (102) 으로 코팅되어 있다. 다른 허용가능한 방법들은 화학기상증착법 및 분자빔성장법을 포함한다.
도 2 에서, 희생층은 단일층이다. 그러나, 본 발명의 다른 실시형태들에서, 층 (102) 은 최상부에 희생층을 갖는 복수의 층일 수도 있다.
도면들 중 도 3 은 MEMS 장치의 제조 단계를 나타내며, 여기서 희생층 (102) 은 세로방향으로 이격된 그루브 (groove; 104) 들을 정의하도록 패터닝되어 있다. 표준 공정은 희생층 (102) 을 패터닝하는데 사용되며, 이는 적절한 마스크를 통하여 층 (102) 을 노광시키고 현상하여 패턴을 형성하는 단계를 포함한다.
도면들 중 도 4 에서, 네거티브 포토레지스트일 수 있는 네거티브용 감광성 재료의 형태의 감광성 고분자 재료는 층들 (100 및 102) 에 의해 정의되는 막 스택의 전체 높이 보다 높은 두께로 희생층 (102) 위에 스핀되어 있다. 그 후, 종래의 기술들을 이용하여 네거티브용 감광성 재료를 기판 (100) 을 통하여 자외선에 노광시키고 현상한다. 세로방향의 그루브 (104) 들은 네거티브용 감광성 재료를 노광시키는 유일한 수단이기 때문에, 스택 위의 네거티브용 감광성 재료는 후속의 현상 프로세스 동안에 용해되고, 그루브 (104) 들에 배치되는 네거티브용 감광성 재료의 세로방향 리지 (106) 들만이 남는다. 따라서, 먼저 희생층 (102) 을 패터닝한 후 네거티브용 감광성 재료를 희생층 (102) 내의 세로방향 그루브 (104) 들에 의해 기판 (100) 을 통하여 네거티브용 감광성 재료를 노광시키므로, 희생층 (102) 은 포토마스크로서 기능하며, 이는 부가적인 마스킹 단계에 대한 요구 없이 네거티브 감광성 재료를 리소그래피 패터닝할 수 있다. 도면들 중 도 5 에서, 구조층 (108) 은 스택상에 증착되어 있고 희생층 (102) 은 제거되어 있으므로, 층 (108) 은 리지 (106) 들에 의해 지지된다. 다른 포토마스크들을 이용하여, 임의의 원하는 형태의 지지 구조들을 제조할 수 있음을 알 수 있다. 따라서, 리지들 대신에, 다른 실시형태들에서는, 필러 (pillar) 또는 포스트 (post) 를 형성할 수도 있다. 층 (108) 은 크게 도전되고 반사되며, 통상적으로 알루미늄 및 니켈을 함유한다.
도면들 중 도 6 은 MEMS 장치의 제조시의 후속 단계를 나타내며, 여기서 층 (108) 은 가로방향으로 연장하는 스트립들로 패터닝되어 있다. 도면들 중 도 7 은 층 (108) 상에 증착되는 옥사이드 스페이서층 (110) 을 갖는 피막 스택을 나타낸다. 도면들 중 도 8 은, 옥사이드 스페이서층 (110) 이 패터닝되어 있는 MEMS 장치의 제조 단계를 나타낸다. 도면들 중 도 9 는 기계적 충격 누적으로 인한 손상으로부터 구조를 보호하고 미립자들이 IMOD 구조들의 동작과 간섭하는 것을 방지하기 위하여, 전체 구조 상에 감압 접착제 (114) 와 함께 밀봉 피막을 인가하는 MEMS 장치의 제조 단계를 나타낸다. 밀봉 피막 (112) 은 밀봉성을 제공하기 위하여 금속피막 또는 옥사이드피막으로 코팅되어 있는 금속 피막 또는 고분자피막들과 같은 여러 재료로 이루어질 수 있다. 마지막으로, 도 10 은 희생층 (102) 의 잔여물을 제거하기 위하여 XeF2 가스를 사용하여 세정한 이후의 구조를 나타낸다. 그 후, 구조의 에지들을 밀봉한다.
다른 실시형태들에서, 옥사이드층 (110) 대신에, 네거티브용 감광성 재료의 또 다른 층을 옥사이드층 (110) 위에 스핀하고 기판 (100) 을 통하여 노광할 수도 있고, 상술한 기술들을 이용하여 지지 구조들의 추가적인 세트를 형성할 수도 있다. 이 지지 구조들은 다른 층들에 대하여 지지부를 제공한다. 다른 층의 상부에 복수의 층 또는 "플로어(floors)" 스택된 층을 갖는 MEMS 구조를 만들기 위하여 상기 프로세스를 반복할 수도 있음을 이해할 수 있으며, 여기서 플로어들은 상기 기술들에 따라 제조되는 지지 구조들에 의해 수직으로 이격되어 있다. 본 발명의 다른 이점은, MEMS 장치의 2 개의 층 사이에서 기계적 지지부를 정확하게 정의할 수 있는 미세제조 기술을 제공한다는 것이다. 이는 MEMS 장치내의 지지부와 다른 구조들 사이에 클린하고 적절하게 정의된 기계적 접촉을 허용한다.
또한, 본 발명은 또 다른 층을 패턴하기 위하여 기판상에 패터닝된 층을 포토마스크로서 이용하여, 마스킹 단계를 줄일 수 있다.
특정한 예시적인 실시형태들을 참조하여 본 발명을 설명하였지만, 청구항들에 설명한 바와 같이 본 발명의 넓은 사상을 벗어나지 않고 이 실시형태들을 다양하게 변경 및 변화시킬 수 있음을 알 수 있다. 따라서, 명세서 및 도면들은 제 한적인 의미가 아니라 예시적인 의미로 간주된다.

Claims (24)

  1. MEMS (Microelectromechanical systems) 장치를 제조하는 미세제조 방법으로서,
    기판 위에 하나의 층 또는 복수의 층을 증착하는 단계로서, 상기 하나의 층 또는 복수의 층의 하나는 희생층을 포함하는, 증착 단계;
    상기 하나의 층 또는 복수의 층을 패터닝하는 단계;
    상기 하나의 층 또는 복수의 층 상에 중간층을 증착하는 단계;
    상기 희생층을 포토마스크로서 이용하여 상기 중간층을 패터닝하는 단계; 및
    상기 중간층 위에 상부층을 증착하는 단계를 포함하는, 미세제조 방법.
  2. 제 1 항에 있어서,
    상기 기판은 광이 통과하도록 허용하는, 미세제조 방법.
  3. 제 2 항에 있어서,
    상기 기판은 유리를 포함하는, 미세제조 방법.
  4. 제 1 항에 있어서,
    상기 하나의 층 또는 복수의 층을 패터닝하는 단계는 상기 하나의 층 또는 복수의 층에 세로방향으로 이격된 그루부 (groove) 를 형성하는 단계를 포함하는, 미세제조 방법.
  5. 제 4 항에 있어서,
    상기 중간층을 패터닝하는 단계는 상기 중간층을 상기 하나의 층 또는 복수의 층의 그루브를 통과하는 광에 노광시키는 단계를 포함하는, 미세제조 방법.
  6. 삭제
  7. 제 1 항에 있어서,
    상기 희생층을 제거하는 단계를 더 포함하는, 미세제조 방법.
  8. 제 1 항에 있어서,
    상기 중간층은 네거티브용 감광성 재료를 함유하는, 미세제조 방법.
  9. 제 1 항에 있어서,
    상기 상부층은 니켈 및 알루미늄을 함유하는, 미세제조 방법.
  10. 제 1 항에 있어서,
    상기 상부층을 패터닝하는 단계를 더 포함하는, 미세제조 방법.
  11. 제 5 항에 있어서,
    상기 중간층을 현상하여 상기 하나의 층 또는 복수의 층의 그루브에 배치되는 상기 중간층에 세로방향으로 이격된 리지들을 형성하는 단계를 더 포함하는, 미세제조 방법.
  12. 제 11 항에 있어서,
    상기 상부층은 상기 중간층의 세로 방향으로 이격된 리지들에 의해 지지되는, 가로방향으로 연장되는 스트립들을 정의하도록 패터닝되는 미세제조 방법.
  13. MEMS (Microelectromechanical systems) 장치를 제조하는 방법으로서,
    a) 베이스층 위에 하나의 층 또는 복수의 층을 증착하는 단계로서, 상기 하나의 층, 또는 상기 복수의 층의 최상부층은 희생층인, 증착 단계;
    b) 상기 하나의 층 또는 복수의 층을 패터닝하여 하나 이상의 개구를 제공하는 단계;
    c) 상기 하나의 층 또는 복수의 층 위에 감광층을 증착하는 단계;
    d) 상기 희생층을 포토마스크로서 이용하여, 상기 하나 이상의 개구를 통하여 광을 통과시켜 상기 감광층을 노광시키는 단계; 및
    e) 상기 감광층 위에 구조층을 증착하는 단계를 포함하는, MEMS 장치의 제조 방법.
  14. 제 13 항에 있어서,
    상기 베이스층은 기판인 MEMS 장치의 제조 방법.
  15. 제 13 항에 있어서,
    상기 광은 자외선광을 포함하는, MEMS 장치의 제조 방법.
  16. 제 13 항에 있어서,
    상기 감광층은 네거티브용 감광성 재료를 함유하는, MEMS 장치의 제조 방법.
  17. 삭제
  18. 제 13 항에 있어서,
    상기 희생층을 제거하는 단계를 더 포함하는, MEMS 장치의 제조 방법.
  19. 제 13 항에 있어서,
    상기 a) 단계 내지 d) 단계는 1 회 이상 반복되며,
    각 구조층은 상기 베이스층을 정의하는, MEMS 장치의 제조 방법.
  20. 제 1 항에 있어서,
    상기 중간층을 패터닝하는 단계는 상기 MEMS 장치의 지지 부분을 정의하는 단계를 포함하는, 미세제조 방법.
  21. 제 1 항에 있어서,
    상기 중간층의 부분은 상기 MEMS 장치 내에 잔존하여 상기 상부층을 지지하는, 미세제조 방법.
  22. 제 1 항에 있어서,
    상기 기판 위에 하나의 층 또는 복수의 층을 증착하는 단계는 상기 기판 상에 상기 하나의 층 또는 복수의 층을 증착하는 단계를 포함하는, 미세제조 방법.
  23. 제 13 항에 있어서,
    상기 감광층을 노광하는 단계는 상기 MEMS 장치의 지지 부분을 정의하는 단계를 포함하는, MEMS 장치의 제조 방법.
  24. 제 13 항에 있어서,
    상기 감광층의 노광된 부분은 상기 MEMS 장치 내에 잔존하여 상기 구조층을 지지하는, MEMS 장치의 제조 방법.
KR1020047012516A 2002-02-12 2002-04-29 Ｍｅｍｓ　장치의 구조를 제조하는 방법 KR100947813B1 (ko)

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US7250315B2 (en) 2007-07-31
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US6794119B2 (en) 2004-09-21
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