KR100944727B1 - 포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트 - Google Patents

포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트 Download PDF

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Publication number
KR100944727B1
KR100944727B1 KR1020020084759A KR20020084759A KR100944727B1 KR 100944727 B1 KR100944727 B1 KR 100944727B1 KR 1020020084759 A KR1020020084759 A KR 1020020084759A KR 20020084759 A KR20020084759 A KR 20020084759A KR 100944727 B1 KR100944727 B1 KR 100944727B1
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KR
South Korea
Prior art keywords
photoresist composition
photoresist
alkyl
polymer
group
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KR1020020084759A
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English (en)
Korean (ko)
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KR20030076211A (ko
Inventor
바클레이조지지.
볼튼패트릭제이.
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
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Publication of KR20030076211A publication Critical patent/KR20030076211A/ko
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Publication of KR100944727B1 publication Critical patent/KR100944727B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
KR1020020084759A 2001-12-28 2002-12-27 포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트 KR100944727B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34382401P 2001-12-28 2001-12-28
US60/343,824 2001-12-28

Publications (2)

Publication Number Publication Date
KR20030076211A KR20030076211A (ko) 2003-09-26
KR100944727B1 true KR100944727B1 (ko) 2010-02-26

Family

ID=29735980

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020084759A KR100944727B1 (ko) 2001-12-28 2002-12-27 포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트

Country Status (3)

Country Link
US (1) US7022455B2 (US07022455-20060404-C00002.png)
JP (1) JP2003233191A (US07022455-20060404-C00002.png)
KR (1) KR100944727B1 (US07022455-20060404-C00002.png)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030235777A1 (en) * 2001-12-31 2003-12-25 Shipley Company, L.L.C. Phenolic polymers, methods for synthesis thereof and photoresist compositions comprising same
WO2004092831A2 (en) * 2003-04-09 2004-10-28 Rohm And Haas, Electronic Materials, L.L.C. Photoresists and methods for use thereof
KR100944227B1 (ko) * 2007-12-17 2010-02-24 제일모직주식회사 방향족 산 분해성 기를 갖는 (메타)아크릴레이트 화합물 및감광성 고분자 및 레지스트 조성물
US9182662B2 (en) 2012-02-15 2015-11-10 Rohm And Haas Electronic Materials Llc Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom
TWI523872B (zh) 2013-02-25 2016-03-01 羅門哈斯電子材料有限公司 光敏共聚物，包括該共聚物之光阻，及形成電子裝置之方法
US9182669B2 (en) 2013-12-19 2015-11-10 Rohm And Haas Electronic Materials Llc Copolymer with acid-labile group, photoresist composition, coated substrate, and method of forming an electronic device
US20210198468A1 (en) * 2019-12-31 2021-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of manufacturing a semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688628A (en) 1993-11-11 1997-11-18 Nippon Zeon Co., Ltd. Resist composition
JP2000235264A (ja) * 1998-12-14 2000-08-29 Fuji Photo Film Co Ltd ポジ型シリコーン含有感光性組成物
KR20010088315A (ko) * 2000-01-13 2001-09-26 무네유키 가코우 전자선 또는 엑스선용 네거티브 레지스트 조성물
KR20010095279A (ko) * 2000-04-03 2001-11-03 마티네즈 길러모 포토레지스트 조성물 및 그의 용도

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2632066B2 (ja) * 1990-04-06 1997-07-16 富士写真フイルム株式会社 ポジ画像の形成方法
US5071730A (en) * 1990-04-24 1991-12-10 International Business Machines Corporation Liquid apply, aqueous processable photoresist compositions
US5506088A (en) * 1991-09-17 1996-04-09 Fujitsu Limited Chemically amplified resist composition and process for forming resist pattern using same
JP3114166B2 (ja) * 1992-10-22 2000-12-04 ジェイエスアール株式会社 マイクロレンズ用感放射線性樹脂組成物
US5352564A (en) * 1993-01-19 1994-10-04 Shin-Etsu Chemical Co., Ltd. Resist compositions
JPH06324494A (ja) * 1993-05-12 1994-11-25 Fujitsu Ltd パターン形成材料およびパターン形成方法
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
US5866304A (en) * 1993-12-28 1999-02-02 Nec Corporation Photosensitive resin and method for patterning by use of the same
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
US5558971A (en) * 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
US5861231A (en) * 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US6136501A (en) * 1998-08-28 2000-10-24 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
US6379861B1 (en) * 2000-02-22 2002-04-30 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688628A (en) 1993-11-11 1997-11-18 Nippon Zeon Co., Ltd. Resist composition
JP2000235264A (ja) * 1998-12-14 2000-08-29 Fuji Photo Film Co Ltd ポジ型シリコーン含有感光性組成物
KR20010088315A (ko) * 2000-01-13 2001-09-26 무네유키 가코우 전자선 또는 엑스선용 네거티브 레지스트 조성물
KR20010095279A (ko) * 2000-04-03 2001-11-03 마티네즈 길러모 포토레지스트 조성물 및 그의 용도

Also Published As

Publication number Publication date
JP2003233191A (ja) 2003-08-22
US7022455B2 (en) 2006-04-04
KR20030076211A (ko) 2003-09-26
US20030232274A1 (en) 2003-12-18

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