KR100943677B1 - 도금 방법 - Google Patents

도금 방법 Download PDF

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Publication number
KR100943677B1
KR100943677B1 KR1020030022486A KR20030022486A KR100943677B1 KR 100943677 B1 KR100943677 B1 KR 100943677B1 KR 1020030022486 A KR1020030022486 A KR 1020030022486A KR 20030022486 A KR20030022486 A KR 20030022486A KR 100943677 B1 KR100943677 B1 KR 100943677B1
Authority
KR
South Korea
Prior art keywords
photosensitive composition
meth
binder polymer
acrylate
crosslinker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020030022486A
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English (en)
Korean (ko)
Other versions
KR20040002487A (ko
Inventor
포어멘로버트에스.
스티퍼질이.
휴엔거에릭씨.
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 filed Critical 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
Publication of KR20040002487A publication Critical patent/KR20040002487A/ko
Application granted granted Critical
Publication of KR100943677B1 publication Critical patent/KR100943677B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020030022486A 2002-04-11 2003-04-10 도금 방법 Expired - Lifetime KR100943677B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37187302P 2002-04-11 2002-04-11
US60/371,873 2002-04-11

Publications (2)

Publication Number Publication Date
KR20040002487A KR20040002487A (ko) 2004-01-07
KR100943677B1 true KR100943677B1 (ko) 2010-02-22

Family

ID=28454879

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030022486A Expired - Lifetime KR100943677B1 (ko) 2002-04-11 2003-04-10 도금 방법

Country Status (7)

Country Link
US (1) US7344970B2 (enExample)
EP (1) EP1353228B1 (enExample)
JP (1) JP4224851B2 (enExample)
KR (1) KR100943677B1 (enExample)
CN (1) CN100343758C (enExample)
SG (2) SG111989A1 (enExample)
TW (1) TWI236049B (enExample)

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KR20140126669A (ko) * 2013-04-23 2014-10-31 도오꾜오까고오교 가부시끼가이샤 피막 형성 방법

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JP4699140B2 (ja) * 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
EP1783548B1 (en) * 2005-11-08 2017-03-08 Rohm and Haas Electronic Materials LLC Method of forming a patterned layer on a substrate
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
JP6133056B2 (ja) * 2012-12-27 2017-05-24 ローム・アンド・ハース電子材料株式会社 スズまたはスズ合金めっき液
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US8932799B2 (en) * 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US10568483B2 (en) * 2014-12-12 2020-02-25 Irobot Corporation Cleaning system for autonomous robot
KR101598826B1 (ko) * 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물
KR101757543B1 (ko) 2015-09-07 2017-07-13 오병서 천장등 고정방법 및 그 구조
CN110760896A (zh) * 2018-07-26 2020-02-07 苏州苏大维格科技集团股份有限公司 一种工作版的防皱电铸工艺
US12353129B2 (en) * 2021-12-27 2025-07-08 Nanya Technology Corporation Method for preparing semiconductor device structure including bevel etching process

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US5965328A (en) 1995-05-10 1999-10-12 Jsr Corporation Radiation sensitive resin composition and material for forming bumps containing the same

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Publication number Priority date Publication date Assignee Title
KR20140126669A (ko) * 2013-04-23 2014-10-31 도오꾜오까고오교 가부시끼가이샤 피막 형성 방법
KR102375995B1 (ko) 2013-04-23 2022-03-18 도오꾜오까고오교 가부시끼가이샤 피막 형성 방법

Also Published As

Publication number Publication date
SG145567A1 (en) 2008-09-29
KR20040002487A (ko) 2004-01-07
TW200403714A (en) 2004-03-01
CN100343758C (zh) 2007-10-17
CN1456711A (zh) 2003-11-19
JP4224851B2 (ja) 2009-02-18
JP2004126508A (ja) 2004-04-22
EP1353228B1 (en) 2015-01-28
US7344970B2 (en) 2008-03-18
US20040018724A1 (en) 2004-01-29
HK1059458A1 (en) 2004-07-02
EP1353228A1 (en) 2003-10-15
SG111989A1 (en) 2005-06-29
TWI236049B (en) 2005-07-11

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