CN100343758C - 电镀方法 - Google Patents

电镀方法 Download PDF

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Publication number
CN100343758C
CN100343758C CNB031095984A CN03109598A CN100343758C CN 100343758 C CN100343758 C CN 100343758C CN B031095984 A CNB031095984 A CN B031095984A CN 03109598 A CN03109598 A CN 03109598A CN 100343758 C CN100343758 C CN 100343758C
Authority
CN
China
Prior art keywords
photosensitive composition
layer
acrylate
methacrylate
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB031095984A
Other languages
English (en)
Chinese (zh)
Other versions
CN1456711A (zh
Inventor
R·S·福曼
J·E·斯蒂珀
E·C·欣格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHIPLEY Inc
Original Assignee
SHIPLEY Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHIPLEY Inc filed Critical SHIPLEY Inc
Publication of CN1456711A publication Critical patent/CN1456711A/zh
Application granted granted Critical
Publication of CN100343758C publication Critical patent/CN100343758C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB031095984A 2002-04-11 2003-04-11 电镀方法 Expired - Lifetime CN100343758C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37187302P 2002-04-11 2002-04-11
US60/371,873 2002-04-11

Publications (2)

Publication Number Publication Date
CN1456711A CN1456711A (zh) 2003-11-19
CN100343758C true CN100343758C (zh) 2007-10-17

Family

ID=28454879

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031095984A Expired - Lifetime CN100343758C (zh) 2002-04-11 2003-04-11 电镀方法

Country Status (7)

Country Link
US (1) US7344970B2 (enExample)
EP (1) EP1353228B1 (enExample)
JP (1) JP4224851B2 (enExample)
KR (1) KR100943677B1 (enExample)
CN (1) CN100343758C (enExample)
SG (2) SG111989A1 (enExample)
TW (1) TWI236049B (enExample)

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JP4699140B2 (ja) * 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
EP1783548B1 (en) * 2005-11-08 2017-03-08 Rohm and Haas Electronic Materials LLC Method of forming a patterned layer on a substrate
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
JP6133056B2 (ja) * 2012-12-27 2017-05-24 ローム・アンド・ハース電子材料株式会社 スズまたはスズ合金めっき液
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US8932799B2 (en) * 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
JP6059071B2 (ja) * 2013-04-23 2017-01-11 東京応化工業株式会社 被膜形成方法
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US10568483B2 (en) * 2014-12-12 2020-02-25 Irobot Corporation Cleaning system for autonomous robot
KR101598826B1 (ko) * 2015-08-28 2016-03-03 영창케미칼 주식회사 에칭 내성이 우수한 i-선용 네가티브형 포토레지스트 조성물
KR101757543B1 (ko) 2015-09-07 2017-07-13 오병서 천장등 고정방법 및 그 구조
CN110760896A (zh) * 2018-07-26 2020-02-07 苏州苏大维格科技集团股份有限公司 一种工作版的防皱电铸工艺
US12353129B2 (en) * 2021-12-27 2025-07-08 Nanya Technology Corporation Method for preparing semiconductor device structure including bevel etching process

Citations (3)

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Publication number Priority date Publication date Assignee Title
US4629680A (en) * 1984-01-30 1986-12-16 Fuji Photo Film Co., Ltd. Photopolymerizable materials capable of being developed by a weak alkaline aqueous solution
US5942369A (en) * 1997-01-27 1999-08-24 Jsr Corporation Positive photoresist composition
US5965328A (en) * 1995-05-10 1999-10-12 Jsr Corporation Radiation sensitive resin composition and material for forming bumps containing the same

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NL101499C (enExample) 1951-08-20
US2875047A (en) 1955-01-19 1959-02-24 Oster Gerald Photopolymerization with the formation of coherent plastic masses
US2850445A (en) 1955-01-19 1958-09-02 Oster Gerald Photopolymerization
US3074974A (en) 1957-12-06 1963-01-22 Monsanto Chemicals Method for the preparation of diglycidyl ether of tetrachlorobisphenol-a
US3097097A (en) 1959-02-12 1963-07-09 Gisela K Oster Photo degrading of gel systems and photographic production of reliefs therewith
NL254306A (enExample) 1959-08-07
GB1090142A (en) 1965-02-26 1967-11-08 Agfa Gevaert Nv Photochemical insolubilisation of polymers
US3479185A (en) 1965-06-03 1969-11-18 Du Pont Photopolymerizable compositions and layers containing 2,4,5-triphenylimidazoyl dimers
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US4162162A (en) 1978-05-08 1979-07-24 E. I. Du Pont De Nemours And Company Derivatives of aryl ketones and p-dialkyl-aminoarylaldehydes as visible sensitizers of photopolymerizable compositions
US4343885A (en) 1978-05-09 1982-08-10 Dynachem Corporation Phototropic photosensitive compositions containing fluoran colorformer
DE3365773D1 (en) 1982-02-26 1986-10-09 Ciba Geigy Ag Coloured photo-hardenable composition
US4592816A (en) 1984-09-26 1986-06-03 Rohm And Haas Company Electrophoretic deposition process
DE3540950A1 (de) 1985-11-19 1987-05-21 Basf Ag Durch photopolymerisation vernetzbare gemische
US4794021A (en) 1986-11-13 1988-12-27 Microelectronics And Computer Technology Corporation Method of providing a planarized polymer coating on a substrate wafer
EP0289004B1 (en) * 1987-04-28 1994-03-23 Sharp Kabushiki Kaisha Recording and reproducing apparatus
US5055164A (en) 1990-03-26 1991-10-08 Shipley Company Inc. Electrodepositable photoresists for manufacture of hybrid circuit boards
EP0490118A1 (en) * 1990-12-10 1992-06-17 Shipley Company Inc. Photoimagable solder mask and photosensitive composition
US5202222A (en) 1991-03-01 1993-04-13 Shipley Company Inc. Selective and precise etching and plating of conductive substrates
CA2076727A1 (en) 1991-08-30 1993-03-01 Richard T. Mayes Alkaline-etch resistant dry film photoresist
US5186383A (en) 1991-10-02 1993-02-16 Motorola, Inc. Method for forming solder bump interconnections to a solder-plated circuit trace
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KR100268967B1 (ko) 1996-01-30 2000-10-16 모기 준이치 금속 착물 형성용 수용액, 주석-은 합금도금욕 및 당해도금욕을 사용하는 도금물의 제조방법
US6099713A (en) 1996-11-25 2000-08-08 C. Uyemura & Co., Ltd. Tin-silver alloy electroplating bath and tin-silver alloy electroplating process
KR100219806B1 (ko) 1997-05-27 1999-09-01 윤종용 반도체장치의 플립 칩 실장형 솔더 범프의 제조방법, 이에 따라 제조되는 솔더범프 및 그 분석방법
US5990564A (en) 1997-05-30 1999-11-23 Lucent Technologies Inc. Flip chip packaging of memory chips
KR100585071B1 (ko) 1999-09-13 2006-06-01 삼성전자주식회사 스핀 코팅을 이용한 포토레지스트막의 도포 방법
US6638847B1 (en) 2000-04-19 2003-10-28 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections
WO2002027407A1 (en) 2000-09-27 2002-04-04 Hitachi Chemical Co., Ltd. Resist pattern, process for producing the same, and utilization thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4629680A (en) * 1984-01-30 1986-12-16 Fuji Photo Film Co., Ltd. Photopolymerizable materials capable of being developed by a weak alkaline aqueous solution
US5965328A (en) * 1995-05-10 1999-10-12 Jsr Corporation Radiation sensitive resin composition and material for forming bumps containing the same
US5942369A (en) * 1997-01-27 1999-08-24 Jsr Corporation Positive photoresist composition

Also Published As

Publication number Publication date
SG145567A1 (en) 2008-09-29
KR100943677B1 (ko) 2010-02-22
KR20040002487A (ko) 2004-01-07
TW200403714A (en) 2004-03-01
CN1456711A (zh) 2003-11-19
JP4224851B2 (ja) 2009-02-18
JP2004126508A (ja) 2004-04-22
EP1353228B1 (en) 2015-01-28
US7344970B2 (en) 2008-03-18
US20040018724A1 (en) 2004-01-29
HK1059458A1 (en) 2004-07-02
EP1353228A1 (en) 2003-10-15
SG111989A1 (en) 2005-06-29
TWI236049B (en) 2005-07-11

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