KR100940113B1 - 고전압 트랜지스터 제조방법 - Google Patents
고전압 트랜지스터 제조방법 Download PDFInfo
- Publication number
- KR100940113B1 KR100940113B1 KR1020020084657A KR20020084657A KR100940113B1 KR 100940113 B1 KR100940113 B1 KR 100940113B1 KR 1020020084657 A KR1020020084657 A KR 1020020084657A KR 20020084657 A KR20020084657 A KR 20020084657A KR 100940113 B1 KR100940113 B1 KR 100940113B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- high voltage
- semiconductor substrate
- ion implantation
- ions
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005468 ion implantation Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 230000015556 catabolic process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (3)
- 반도체 기판의 소정 깊이에 이온을 주입하는 단계;상기 반도체 기판을 소정의 깊이로 식각하여 트렌치를 형성하는 단계;상기 반도체 기판의 식각된 영역에 저농도의 이온을 주입한 후 고농도의 이온을 주입하여 소오스/드레인 영역 형성을 위한 이온주입층을 형성하는 단계;상기 이온주입층이 분리되도록 상기 반도체 기판을 식각하는 단계;상기 반도체 기판 상에 산화막을 형성하는 단계;상기 산화막을 에치백(etch back)하는 단계; 및상기 산화막 상에 게이트도전층을 형성하는 단계를 포함하는 것을 특징으로 하는 고전압 트랜지스터 제조방법.
- 제 1항에 있어서, 상기 에치백하는 단계에서,상기 트렌치의 하부 모서리와 상부 모서리에서의 산화막의 두께를 다르게 제어하는 것을 특징으로 하는 고전압 트랜지스터 제조방법.
- 제 2항에 있어서, 상기 산화막을 에치백하는 단계에서,상기 트렌치의 하부 모서리에서의 산화막의 두께가 상기 트렌치의 상부 모서리에서의 산화막의 두께보다 두껍게 되도록 제어하는 것을 특징으로 하는 고전압 트랜지스터 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020084657A KR100940113B1 (ko) | 2002-12-26 | 2002-12-26 | 고전압 트랜지스터 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020084657A KR100940113B1 (ko) | 2002-12-26 | 2002-12-26 | 고전압 트랜지스터 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040057837A KR20040057837A (ko) | 2004-07-02 |
KR100940113B1 true KR100940113B1 (ko) | 2010-02-02 |
Family
ID=37350385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020020084657A KR100940113B1 (ko) | 2002-12-26 | 2002-12-26 | 고전압 트랜지스터 제조방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100940113B1 (ko) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945899A (ja) * | 1995-07-27 | 1997-02-14 | Sony Corp | 縦型トランジスタを持つ半導体装置の製造方法 |
KR0143459B1 (ko) * | 1995-05-22 | 1998-07-01 | 한민구 | 모오스 게이트형 전력 트랜지스터 |
KR20000043897A (ko) * | 1998-12-29 | 2000-07-15 | 김영환 | 반도체 소자의 트랜지스터 제조 방법 |
-
2002
- 2002-12-26 KR KR1020020084657A patent/KR100940113B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0143459B1 (ko) * | 1995-05-22 | 1998-07-01 | 한민구 | 모오스 게이트형 전력 트랜지스터 |
JPH0945899A (ja) * | 1995-07-27 | 1997-02-14 | Sony Corp | 縦型トランジスタを持つ半導体装置の製造方法 |
KR20000043897A (ko) * | 1998-12-29 | 2000-07-15 | 김영환 | 반도체 소자의 트랜지스터 제조 방법 |
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Publication number | Publication date |
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KR20040057837A (ko) | 2004-07-02 |
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