KR100934842B1 - 유기전계발광표시소자 - Google Patents
유기전계발광표시소자 Download PDFInfo
- Publication number
- KR100934842B1 KR100934842B1 KR1020030030997A KR20030030997A KR100934842B1 KR 100934842 B1 KR100934842 B1 KR 100934842B1 KR 1020030030997 A KR1020030030997 A KR 1020030030997A KR 20030030997 A KR20030030997 A KR 20030030997A KR 100934842 B1 KR100934842 B1 KR 100934842B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- organic light
- display device
- electrode
- layer
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000005525 hole transport Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 239000010409 thin film Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (5)
- 기판과;상기 기판 위에 종횡으로 배열된 게이트라인 및 데이터라인과상기 게이트라인 및 데이터라인에 의해서 정의되는 단위화소와;상기 각각의 단위화소 내에 배치된 유기발광소자와;상기 유기발광소자와 연결되어 이를 구동시키며, 소스/드레인전극 및 액티브층으로 구성되고, 상기 액티브층은 각각의 단위화소마다 서로 다른 폭(width)/길이(length) 비를 가지는 구동소자를 포함하여 구성된 유기전계발광표시소자.
- 제 1 항에 있어서, 상기 유기발광소자는 제1전극, 제2전극 및 상기 제1전극과 제2전극 사이에 개재된 유기발광층으로 구성되어 있는 것을 특징으로 하는 유기전계발광표시소자.
- 제 2 항에 있어서, 상기 유기발광층은 전자수송층, 발광층, 정공수송층 및 정공 주입층으로 형성되어 있는 것을 특징으로 하는 유기 전계발광 표시소자.
- 제 1 항에 있어서, 상기 단위화소 내에 배치된 스위칭소자를 추가로 포함하여 구성된 것을 특징으로 하는 유기전계발광표시소자.
- 제 1 항에 있어서, 상기 액티브층은 폴리실리콘으로 이루어진 것을 특징으로 하는 유기전계발광표시소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020030030997A KR100934842B1 (ko) | 2003-05-15 | 2003-05-15 | 유기전계발광표시소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030030997A KR100934842B1 (ko) | 2003-05-15 | 2003-05-15 | 유기전계발광표시소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040098756A KR20040098756A (ko) | 2004-11-26 |
KR100934842B1 true KR100934842B1 (ko) | 2009-12-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020030030997A KR100934842B1 (ko) | 2003-05-15 | 2003-05-15 | 유기전계발광표시소자 |
Country Status (1)
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KR (1) | KR100934842B1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100603288B1 (ko) * | 2003-08-11 | 2006-07-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 평판표시장치 |
KR100640851B1 (ko) | 2004-12-09 | 2006-11-02 | 엘지전자 주식회사 | 멀티 에어컨 시스템의 상태 모니터링 장치 및 그 방법 |
KR102362186B1 (ko) * | 2015-01-09 | 2022-02-11 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000017104A (ko) * | 1998-08-06 | 2000-03-25 | 이데이 노부유끼 | 액정 표시 장치, 트랜지스터, 및 표시 장치 |
KR20010014509A (ko) * | 1999-02-26 | 2001-02-26 | 다카노 야스아키 | 컬러 표시 장치 |
KR20010050816A (ko) * | 1999-10-04 | 2001-06-25 | 다카노 야스아키 | 컬러 표시 장치 |
JP2003007720A (ja) | 2001-06-21 | 2003-01-10 | Matsushita Electric Ind Co Ltd | 多結晶薄膜、薄膜トランジスタアレイ、画像表示装置およびそれらの製造方法 |
-
2003
- 2003-05-15 KR KR1020030030997A patent/KR100934842B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000017104A (ko) * | 1998-08-06 | 2000-03-25 | 이데이 노부유끼 | 액정 표시 장치, 트랜지스터, 및 표시 장치 |
KR20010014509A (ko) * | 1999-02-26 | 2001-02-26 | 다카노 야스아키 | 컬러 표시 장치 |
KR20010050816A (ko) * | 1999-10-04 | 2001-06-25 | 다카노 야스아키 | 컬러 표시 장치 |
JP2003007720A (ja) | 2001-06-21 | 2003-01-10 | Matsushita Electric Ind Co Ltd | 多結晶薄膜、薄膜トランジスタアレイ、画像表示装置およびそれらの製造方法 |
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KR20040098756A (ko) | 2004-11-26 |
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