KR100929601B1 - 스냅작동식 열 스위치 - Google Patents
스냅작동식 열 스위치 Download PDFInfo
- Publication number
- KR100929601B1 KR100929601B1 KR1020047002563A KR20047002563A KR100929601B1 KR 100929601 B1 KR100929601 B1 KR 100929601B1 KR 1020047002563 A KR1020047002563 A KR 1020047002563A KR 20047002563 A KR20047002563 A KR 20047002563A KR 100929601 B1 KR100929601 B1 KR 100929601B1
- Authority
- KR
- South Korea
- Prior art keywords
- thermal
- actuator
- electrical
- stable
- moving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- 239000011521 glass Substances 0.000 claims abstract description 14
- 230000002902 bimodal effect Effects 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- 239000010937 tungsten Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 86
- 239000004020 conductor Substances 0.000 claims description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 230000009977 dual effect Effects 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052711 selenium Inorganic materials 0.000 claims description 9
- 239000011669 selenium Substances 0.000 claims description 9
- 230000002452 interceptive effect Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000005459 micromachining Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 17
- 230000008859 change Effects 0.000 description 15
- 239000007779 soft material Substances 0.000 description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 7
- 229910052753 mercury Inorganic materials 0.000 description 7
- 229910052716 thallium Inorganic materials 0.000 description 7
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000005297 pyrex Substances 0.000 description 4
- 235000014676 Phragmites communis Nutrition 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H37/00—Thermally-actuated switches
- H01H37/02—Details
- H01H37/32—Thermally-sensitive members
- H01H37/46—Thermally-sensitive members actuated due to expansion or contraction of a solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
- H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
- H01H1/20—Bridging contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H37/00—Thermally-actuated switches
- H01H2037/008—Micromechanical switches operated thermally
Landscapes
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
- Manufacture Of Switches (AREA)
- Thermally Actuated Switches (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31378901P | 2001-08-20 | 2001-08-20 | |
| US60/313,789 | 2001-08-20 | ||
| PCT/US2002/026439 WO2003017301A1 (en) | 2001-08-20 | 2002-08-20 | Snap action thermal switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040032950A KR20040032950A (ko) | 2004-04-17 |
| KR100929601B1 true KR100929601B1 (ko) | 2009-12-03 |
Family
ID=23217148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020047002563A Expired - Lifetime KR100929601B1 (ko) | 2001-08-20 | 2002-08-20 | 스냅작동식 열 스위치 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6768412B2 (https=) |
| EP (1) | EP1419511B1 (https=) |
| JP (1) | JP2005500655A (https=) |
| KR (1) | KR100929601B1 (https=) |
| CN (1) | CN100470697C (https=) |
| DE (1) | DE60212857T2 (https=) |
| WO (1) | WO2003017301A1 (https=) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6640646B2 (en) * | 2001-10-19 | 2003-11-04 | Honeywell International, Inc. | Force measurement of bimetallic thermal disc |
| JP2003062798A (ja) * | 2001-08-21 | 2003-03-05 | Advantest Corp | アクチュエータ及びスイッチ |
| US20030075992A1 (en) * | 2001-10-19 | 2003-04-24 | Kouns Heath Elliot | Utilizing feedback for control of switch actuators |
| US7411792B2 (en) * | 2002-11-18 | 2008-08-12 | Washington State University Research Foundation | Thermal switch, methods of use and manufacturing methods for same |
| US7417315B2 (en) * | 2002-12-05 | 2008-08-26 | International Business Machines Corporation | Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging |
| FR2848331B1 (fr) * | 2002-12-10 | 2005-03-11 | Commissariat Energie Atomique | Commutateur micro-mecanique et procede de realisation |
| WO2004066326A2 (en) * | 2003-01-17 | 2004-08-05 | The Regents Of The University Of California | Electro-thermally actuated lateral contact microrelay and associated manufacturing process |
| US7034375B2 (en) * | 2003-02-21 | 2006-04-25 | Honeywell International Inc. | Micro electromechanical systems thermal switch |
| FR2857153B1 (fr) * | 2003-07-01 | 2005-08-26 | Commissariat Energie Atomique | Micro-commutateur bistable a faible consommation. |
| US20050109973A1 (en) * | 2003-11-21 | 2005-05-26 | Glime William H. | Valve diaphragm |
| DE10355333B3 (de) * | 2003-11-27 | 2005-06-30 | Infineon Technologies Ag | Einrichtung und Verfahren zum Nachweis einer Überhitzung eines Halbleiter-Bauelements |
| FR2865724A1 (fr) * | 2004-02-04 | 2005-08-05 | St Microelectronics Sa | Microsysteme electromecanique pouvant basculer entre deux positions stables |
| FR2868591B1 (fr) * | 2004-04-06 | 2006-06-09 | Commissariat Energie Atomique | Microcommutateur a faible tension d'actionnement et faible consommation |
| US20060055499A1 (en) * | 2004-09-16 | 2006-03-16 | Bolle Cristian A | Fuse arrangement |
| US7283030B2 (en) * | 2004-11-22 | 2007-10-16 | Eastman Kodak Company | Doubly-anchored thermal actuator having varying flexural rigidity |
| US7691723B2 (en) * | 2005-01-07 | 2010-04-06 | Honeywell International Inc. | Bonding system having stress control |
| US7258010B2 (en) * | 2005-03-09 | 2007-08-21 | Honeywell International Inc. | MEMS device with thinned comb fingers |
| US7358740B2 (en) * | 2005-03-18 | 2008-04-15 | Honeywell International Inc. | Thermal switch with self-test feature |
| JP4498181B2 (ja) | 2005-03-22 | 2010-07-07 | 東京エレクトロン株式会社 | スイッチアレイ |
| US7339454B1 (en) * | 2005-04-11 | 2008-03-04 | Sandia Corporation | Tensile-stressed microelectromechanical apparatus and microelectromechanical relay formed therefrom |
| US20070090732A1 (en) * | 2005-10-25 | 2007-04-26 | The Charles Stark Draper Laboratory, Inc. | Systems, methods and devices relating to actuatably moveable machines |
| US7566582B2 (en) * | 2005-10-25 | 2009-07-28 | The Charles Stark Draper Laboratory, Inc. | Systems, methods and devices relating to actuatably moveable machines |
| TW200728605A (en) * | 2006-01-20 | 2007-08-01 | Univ Tamkang | Thermo-buckled micro-actuator unit made of polymer with high thermal expansion coefficient |
| US7486854B2 (en) * | 2006-01-24 | 2009-02-03 | Uni-Pixel Displays, Inc. | Optical microstructures for light extraction and control |
| US7621190B2 (en) * | 2006-02-21 | 2009-11-24 | Cisco Technology, Inc. | Method and apparatus for strain monitoring of printed circuit board assemblies |
| US20070205473A1 (en) * | 2006-03-03 | 2007-09-06 | Honeywell International Inc. | Passive analog thermal isolation structure |
| US7401515B2 (en) * | 2006-03-28 | 2008-07-22 | Honeywell International Inc. | Adaptive circuits and methods for reducing vibration or shock induced errors in inertial sensors |
| EP1852687A1 (en) * | 2006-05-04 | 2007-11-07 | Koninklijke Philips Electronics N.V. | Integrated temperature sensor |
| US8120133B2 (en) * | 2006-09-11 | 2012-02-21 | Alcatel Lucent | Micro-actuator and locking switch |
| KR100837741B1 (ko) | 2006-12-29 | 2008-06-13 | 삼성전자주식회사 | 미세 스위치 소자 및 미세 스위치 소자의 제조방법 |
| US7626484B2 (en) | 2007-09-26 | 2009-12-01 | Honeywell International Inc. | Disc seat for thermal switch |
| JP5001129B2 (ja) * | 2007-12-17 | 2012-08-15 | ホーチキ株式会社 | 熱センサ |
| US8004377B2 (en) * | 2008-05-08 | 2011-08-23 | Cooper Technologies Company | Indicator for a fault interrupter and load break switch |
| US7936541B2 (en) | 2008-05-08 | 2011-05-03 | Cooper Technologies Company | Adjustable rating for a fault interrupter and load break switch |
| US7920037B2 (en) * | 2008-05-08 | 2011-04-05 | Cooper Technologies Company | Fault interrupter and load break switch |
| US7952461B2 (en) * | 2008-05-08 | 2011-05-31 | Cooper Technologies Company | Sensor element for a fault interrupter and load break switch |
| US8187902B2 (en) | 2008-07-09 | 2012-05-29 | The Charles Stark Draper Laboratory, Inc. | High performance sensors and methods for forming the same |
| US8013263B2 (en) * | 2008-08-14 | 2011-09-06 | Cooper Technologies Company | Multi-deck transformer switch |
| US8153916B2 (en) * | 2008-08-14 | 2012-04-10 | Cooper Technologies Company | Tap changer switch |
| US8331066B2 (en) * | 2008-12-04 | 2012-12-11 | Cooper Technologies Company | Low force low oil trip mechanism |
| US8173915B2 (en) * | 2008-12-10 | 2012-05-08 | Honeywell International Inc. | Ignition key switch apparatus with improved snap action mechanism |
| EP2282320A1 (de) * | 2009-08-01 | 2011-02-09 | Limitor GmbH | Bimetall-Schnappscheibe |
| US20110063068A1 (en) * | 2009-09-17 | 2011-03-17 | The George Washington University | Thermally actuated rf microelectromechanical systems switch |
| US8779886B2 (en) * | 2009-11-30 | 2014-07-15 | General Electric Company | Switch structures |
| US8547626B2 (en) * | 2010-03-25 | 2013-10-01 | Qualcomm Mems Technologies, Inc. | Mechanical layer and methods of shaping the same |
| JP6024269B2 (ja) * | 2011-09-20 | 2016-11-16 | 株式会社デンソー | 光走査装置 |
| US9010409B2 (en) * | 2011-11-18 | 2015-04-21 | Palo Alto Research Center Incorporated | Thermal switch using moving droplets |
| US9349558B2 (en) * | 2011-12-06 | 2016-05-24 | Palo Alto Research Center Incorporated | Mechanically acuated heat switch |
| WO2013092823A1 (en) * | 2011-12-23 | 2013-06-27 | Sanofi-Aventis Deutschland Gmbh | Sensor arrangement for a packaging of a medicament |
| FR2998417A1 (fr) | 2012-11-16 | 2014-05-23 | St Microelectronics Rousset | Procede de realisation d'un element pointu de circuit integre, et circuit integre correspondant |
| DE102013202882A1 (de) * | 2013-02-21 | 2014-08-21 | Phoenix Contact Gmbh & Co. Kg | Verfahren zur Herstellung einer DC-geeigneten thermischen Schaltvorrichtung (S) zur Absicherung von einem oder mehreren elektronischen Bauteilen (EC). |
| CN103258686A (zh) * | 2013-05-20 | 2013-08-21 | 东南大学 | 基于微机械悬臂梁结构的温度保护器件 |
| WO2017082985A2 (en) * | 2015-08-20 | 2017-05-18 | Northeaslem University | Zero power plasmonic microelectromechanical device |
| DE102015221123A1 (de) * | 2015-10-29 | 2017-05-04 | Bayerische Motoren Werke Aktiengesellschaft | Bedienelement |
| US10145906B2 (en) | 2015-12-17 | 2018-12-04 | Analog Devices Global | Devices, systems and methods including magnetic structures |
| US10865000B2 (en) | 2017-08-28 | 2020-12-15 | Harris Corporation | Satellite with a thermal switch and associated methods |
| EP3748318B1 (en) * | 2019-06-06 | 2022-07-27 | Mitsubishi Electric R&D Centre Europe B.V. | Device for protecting an electronic switch from an over-temperature event |
| US12055927B2 (en) | 2021-02-26 | 2024-08-06 | Honeywell International Inc. | Thermal metamaterial for low power MEMS thermal control |
| IT202300007161A1 (it) * | 2023-04-14 | 2024-10-14 | Humar Tiziano | Attuatore elettromeccanico a matrice polimerica |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5065978A (en) | 1988-04-27 | 1991-11-19 | Dragerwerk Aktiengesellschaft | Valve arrangement of microstructured components |
| JP2002509332A (ja) | 1997-12-16 | 2002-03-26 | コミツサリア タ レネルジー アトミーク | 感熱センサによって変形可能な部材を備えたマイクロシステム |
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| US2798130A (en) * | 1953-05-22 | 1957-07-02 | Cutler Hammer Inc | Electric switch devices |
| US4826131A (en) * | 1988-08-22 | 1989-05-02 | Ford Motor Company | Electrically controllable valve etched from silicon substrates |
| US5058856A (en) * | 1991-05-08 | 1991-10-22 | Hewlett-Packard Company | Thermally-actuated microminiature valve |
| DE4119955C2 (de) * | 1991-06-18 | 2000-05-31 | Danfoss As | Miniatur-Betätigungselement |
| US5164558A (en) | 1991-07-05 | 1992-11-17 | Massachusetts Institute Of Technology | Micromachined threshold pressure switch and method of manufacture |
| US5650568A (en) | 1993-02-10 | 1997-07-22 | The Charles Stark Draper Laboratory, Inc. | Gimballed vibrating wheel gyroscope having strain relief features |
| US5325880A (en) * | 1993-04-19 | 1994-07-05 | Tini Alloy Company | Shape memory alloy film actuated microvalve |
| DE59403742D1 (de) * | 1993-05-27 | 1997-09-18 | Fraunhofer Ges Forschung | Mikroventil |
| US5463233A (en) | 1993-06-23 | 1995-10-31 | Alliedsignal Inc. | Micromachined thermal switch |
| US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
| US5536963A (en) * | 1994-05-11 | 1996-07-16 | Regents Of The University Of Minnesota | Microdevice with ferroelectric for sensing or applying a force |
| US5467068A (en) * | 1994-07-07 | 1995-11-14 | Hewlett-Packard Company | Micromachined bi-material signal switch |
| US5771321A (en) * | 1996-01-04 | 1998-06-23 | Massachusetts Institute Of Technology | Micromechanical optical switch and flat panel display |
| FR2766962B1 (fr) * | 1997-07-29 | 1999-10-15 | Sgs Thomson Microelectronics | Microinterrupteur thermique compatible avec un circuit integre |
| SE9703969L (sv) * | 1997-10-29 | 1999-04-30 | Gert Andersson | Anordning för mekanisk omkoppling av signaler |
| US6143583A (en) | 1998-06-08 | 2000-11-07 | Honeywell, Inc. | Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas |
| US6100477A (en) * | 1998-07-17 | 2000-08-08 | Texas Instruments Incorporated | Recessed etch RF micro-electro-mechanical switch |
| DE19849700C2 (de) * | 1998-10-28 | 2001-06-28 | Festo Ag & Co | Mikroventilanordnung |
| US6188301B1 (en) * | 1998-11-13 | 2001-02-13 | General Electric Company | Switching structure and method of fabrication |
| US6391675B1 (en) * | 1998-11-25 | 2002-05-21 | Raytheon Company | Method and apparatus for switching high frequency signals |
| DE10080131D2 (de) | 1999-01-25 | 2002-04-25 | Gfd Ges Fuer Diamantprodukte M | Mikroschaltkontakt |
| US6239685B1 (en) * | 1999-10-14 | 2001-05-29 | International Business Machines Corporation | Bistable micromechanical switches |
| US6504447B1 (en) * | 1999-10-30 | 2003-01-07 | Hrl Laboratories, Llc | Microelectromechanical RF and microwave frequency power limiter and electrostatic device protection |
| US6359374B1 (en) * | 1999-11-23 | 2002-03-19 | Mcnc | Miniature electrical relays using a piezoelectric thin film as an actuating element |
| US6355534B1 (en) * | 2000-01-26 | 2002-03-12 | Intel Corporation | Variable tunable range MEMS capacitor |
| US6561224B1 (en) * | 2002-02-14 | 2003-05-13 | Abbott Laboratories | Microfluidic valve and system therefor |
-
2002
- 2002-08-20 KR KR1020047002563A patent/KR100929601B1/ko not_active Expired - Lifetime
- 2002-08-20 WO PCT/US2002/026439 patent/WO2003017301A1/en not_active Ceased
- 2002-08-20 JP JP2003522117A patent/JP2005500655A/ja active Pending
- 2002-08-20 US US10/223,943 patent/US6768412B2/en not_active Expired - Lifetime
- 2002-08-20 EP EP02757244A patent/EP1419511B1/en not_active Expired - Lifetime
- 2002-08-20 CN CNB028203062A patent/CN100470697C/zh not_active Expired - Lifetime
- 2002-08-20 DE DE60212857T patent/DE60212857T2/de not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5065978A (en) | 1988-04-27 | 1991-11-19 | Dragerwerk Aktiengesellschaft | Valve arrangement of microstructured components |
| JP2002509332A (ja) | 1997-12-16 | 2002-03-26 | コミツサリア タ レネルジー アトミーク | 感熱センサによって変形可能な部材を備えたマイクロシステム |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1568529A (zh) | 2005-01-19 |
| JP2005500655A (ja) | 2005-01-06 |
| DE60212857D1 (de) | 2006-08-10 |
| CN100470697C (zh) | 2009-03-18 |
| EP1419511A1 (en) | 2004-05-19 |
| EP1419511B1 (en) | 2006-06-28 |
| US20030034870A1 (en) | 2003-02-20 |
| DE60212857T2 (de) | 2006-12-28 |
| US6768412B2 (en) | 2004-07-27 |
| KR20040032950A (ko) | 2004-04-17 |
| WO2003017301A1 (en) | 2003-02-27 |
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