KR100928528B1 - Oxide etching method using tungsten hard mask - Google Patents
Oxide etching method using tungsten hard mask Download PDFInfo
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- KR100928528B1 KR100928528B1 KR1020020086430A KR20020086430A KR100928528B1 KR 100928528 B1 KR100928528 B1 KR 100928528B1 KR 1020020086430 A KR1020020086430 A KR 1020020086430A KR 20020086430 A KR20020086430 A KR 20020086430A KR 100928528 B1 KR100928528 B1 KR 100928528B1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 90
- 239000010937 tungsten Substances 0.000 title claims abstract description 90
- 238000005530 etching Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 230000006378 damage Effects 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910004166 TaN Inorganic materials 0.000 claims description 6
- 229910004200 TaSiN Inorganic materials 0.000 claims description 6
- 229910010037 TiAlN Inorganic materials 0.000 claims description 6
- 229910008482 TiSiN Inorganic materials 0.000 claims description 6
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 18
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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Abstract
본 발명은 식각할 산화막위에 산소 소오스가 없는 물질을 증착한 후, 이위에 하드마스크로 사용할 텅스텐을 증착하는 단계와 상기 텅스텐위에 소정의 포토레지스트패턴을 형성하는 단계, 상기 포토레지스트패턴을 배리어로 이용하여 텅스텐을 식각하는 단계 및 텅스텐 측벽을 손상시키지 않는 화학물질을 이용하여 텅스텐 하부막을 식각하는 단계를 포함하여 이루어지는 산화막 식각을 위한 텅스텐 하드마스크 형성방법을 제공한다. 본 발명에 의하면, 텅스텐을 배리어로 사용하여 산화막을 식각해야 하는 공정에서 텅스텐의 측벽 손상없이 식각을 행할 수 있다.
According to the present invention, after depositing a material free of oxygen source on an oxide layer to be etched, depositing tungsten to be used as a hard mask thereon, and forming a predetermined photoresist pattern on the tungsten, using the photoresist pattern as a barrier. By etching the tungsten and etching the tungsten underlayer using a chemical that does not damage the tungsten sidewalls. According to the present invention, etching can be performed without damaging the sidewalls of tungsten in the process of etching the oxide film using tungsten as a barrier.
텅스텐, 식각 배리어, 하드마스크, 산화막Tungsten, Etch Barrier, Hard Mask, Oxide
Description
도1은 종래기술의 문제점을 도시한 도면.
1 shows a problem of the prior art;
본 발명은 반도체소자의 제조공정에 관한 것으로, 특히 산화막 식각을 위한 텅스텐 하드마스크 형성방법에 관한 것이다.The present invention relates to a manufacturing process of a semiconductor device, and more particularly, to a method of forming a tungsten hard mask for etching an oxide film.
현재 반도체 제조공정중 산화막 식각시 사용가능한 배리어(Barrier)로는 포토레지스트와 폴리실리콘이 이용되고 있다. 근래에 들어서는 텅스텐 및 TiN과 같은 금속배리어가 대두되고 있다. 그러나 텅스텐을 바로 산화막위에 증착하여 식각을 할때는 산소가 산화막에서 빠져나와(out-gassing) 텅스텐박에 손상을 주게 되어 배리어로서의 역할을 할 수 없게 된다. Currently, photoresists and polysilicon are used as barriers that can be used to etch oxides in semiconductor manufacturing processes. In recent years, metal barriers such as tungsten and TiN have emerged. However, when tungsten is directly deposited on the oxide film and etched, oxygen is released from the oxide film (out-gassing) and damages the tungsten foil, so that it cannot serve as a barrier.
종래의 기술에 있어서는 도1에 보이는 바와 같이 하부에 심한 손상이 발생함을 알 수 있다. 이에 대한 해결책으로 전통적으로 사용되고 있는 방법으로서 SF6/N2에 Cl을 첨가하는 방법이 있으나, 포토레지스트 배리어로 식각해야 하는 상황에서는 포토레지스트 선택비가 작아 텅스텐 자체가 무너지는 문제가 있다.
In the prior art, it can be seen that severe damage occurs in the lower part as shown in FIG. As a solution to this problem, there is a conventional method of adding Cl to SF6 / N2. However, in the case where the etching is required to be etched by the photoresist barrier, the photoresist selectivity is small and the tungsten itself collapses.
본 발명은 상기 문제점을 해결하기 위한 것으로써, 텅스텐을 배리어로 이용하여 산화막을 식각할 수 있도록 하는 텅스텐 하드마스크를 사용한 산화막 식각 방법을 제공하는 것을 그 목적으로 한다.An object of the present invention is to provide an oxide film etching method using a tungsten hard mask to etch an oxide film using tungsten as a barrier.
상기 목적을 달성하기 위한 산화막 식각 방법은, 산화막 상에 산소 소오스가 없는 물질의 텅스텐 하부막을 증착하는 단계; 상기 텅스텐 하부막 상에 하드마스크로 사용할 텅스텐막을 증착하는 단계; 상기 텅스텐막 상에 소정의 포토레지스트패턴을 형성하는 단계; 상기 포토레지스트패턴을 배리어로 이용해서 상기 텅스텐막을 식각하여 텅스텐 하드마스크를 형성하는 단계; 상기 텅스텐 하드마스크의 측벽을 손상시키지 않는 화학물질을 이용하여 상기 텅스텐 하부막을 식각하는 단계; 상기 텅스텐 하드마스크를 배리어로 이용하여 상기 산화막을 식각하는 단계; 및 상기 텅스텐 하드마스크와 식각된 상기 텅스텐 하부막을 제거하는 단계를 포함하는 것을 특징으로 한다.
여기서, 상기 텅스텐 하부막은 Ti, TiN, Si3N4, Al, Ru, Pt, Ir, Hf, TaN, TiSiN, TiAlN, TaSiN의 그룹으로 부터 선택된 어느 하나일 수 있다.
상기 텅스텐 하드마스크를 형성하기 위한 상기 텅스텐막의 식각은 SF6/N2를 이용하여 플라즈마 방식에 의해 수행될 수 있다.
상기 텅스텐 하부막으로 Si3N4를 사용하는 경우, 상기 텅스텐막의 식각시 상기 텅스텐 하부막에 대한 손상을 최소화하기 위하여 EPD(End Point Detection)시스템을 활용할 수 있다.
상기 텅스텐 하부막으로 Ti, TiN, TaN, TiSiN, TiAlN, TaSiN의 그룹으로부터 선택된 어느 하나를 사용하는 경우, 상기 텅스텐 하부막의 식각시 Cl2 또는 Cl2/BCl3를 사용할 수 있다.
상기 텅스텐 하드마스크와 상기 텅스텐 하부막의 제거는 습식 또는 건식방식으로 진행될 수 있다.An oxide etching method for achieving the above object comprises the steps of depositing a tungsten underlayer of a material free of oxygen source on the oxide film; Depositing a tungsten film to be used as a hard mask on the tungsten underlayer; Forming a predetermined photoresist pattern on the tungsten film; Etching the tungsten film using the photoresist pattern as a barrier to form a tungsten hard mask; Etching the tungsten underlayer using a chemical that does not damage the sidewalls of the tungsten hardmask; Etching the oxide layer using the tungsten hard mask as a barrier; And removing the tungsten underlayer etched with the tungsten hard mask.
The tungsten underlayer may be any one selected from the group of Ti, TiN, Si 3 N 4 , Al, Ru, Pt, Ir, Hf, TaN, TiSiN, TiAlN, TaSiN.
Etching the tungsten film to form the tungsten hard mask may be performed by a plasma method using SF 6 / N 2 .
When Si 3 N 4 is used as the tungsten underlayer, an end point detection (EPD) system may be used to minimize damage to the tungsten underlayer when etching the tungsten layer.
When any one selected from the group of Ti, TiN, TaN, TiSiN, TiAlN, TaSiN is used as the tungsten underlayer, Cl 2 or Cl 2 / BCl 3 may be used when etching the tungsten underlayer.
The tungsten hard mask and the tungsten underlayer may be removed in a wet or dry manner.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다. DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.
본 발명은 산화막 식각시 산소(Oxygen) 소오스가 없는 Ti, TiN, Si3N4와 같은 막을 식각할 산화막위에 증착하고 이위에 텅스텐을 증착하여 텅스텐을 배리어로 식각하고 텅스텐 하부막은 텅스텐을 손상시키지 않는 화학물질로 식각하는 것이다.According to the present invention, a film such as Ti, TiN, and Si 3 N 4 having no oxygen source is deposited on an oxide layer to be etched and tungsten is deposited thereon to etch tungsten as a barrier and the tungsten underlayer does not damage tungsten. Etch with chemicals.
이하, 본 발명을 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
우선, 식각해야 할 산화막위에 Ti, TiN, Si3N4, Al, Ru, Pt, Ir, Hf, TaN, TiSiN, TiAlN, TaSiN 등과 같이 산소 소오스가 없는 물질로 텅스텐 하부막을 증착한 후, 이 위에 하드마스크로 사용할 텅스텐막을 증착한다.First, a tungsten underlayer is deposited on an oxide layer to be etched with a material free of oxygen source such as Ti, TiN, Si 3 N 4 , Al, Ru, Pt, Ir, Hf, TaN, TiSiN, TiAlN, TaSiN, and the like. A tungsten film to be used as a hard mask is deposited.
이어서 텅스텐막 상에 필요할 경우 반사방지막(ARC;Anti-Reflective Coating; 이아 ARC라 함)을 형성한 후, 포토레지스트를 도포하고 노광 및 현상을 통해 소정의 패턴을 형성한다. Subsequently, if necessary, an anti-reflective coating (ARC; anti-ARC) is formed on the tungsten film, and then a photoresist is applied and a predetermined pattern is formed through exposure and development.
다음에 상기 포토레지스트 패턴을 식각배리어로 이용하여 SF6/N2(대략 10:1)를 식각제로 플라즈마 방식에 의해 텅스텐막을 식각한다. 이에 의해 텅스텐 하드마스크가 형성된다. 이때, 텅스텐 하부막으로 Ti, TiN, Pt, Ir, Ru가 증착된 경우에는 식각선택비가 자연적으로 확보되므로 (TiF3는 비휘발성이므로) 문제가 없지만 Si3N4가 증착된 경우에는 텅스텐 하부막에 대한 손상을 최소화하기 위하여 EPD(End Point Detection)시스템을 활용하여 텅스텐의 식각을 진행한다. 이어서 텅스텐 측벽을 손상시키지 않는 화학물질을 선택하여 텅스텐 하부막을 식각한다. 이때, 플루오르(Fluorine)가 많이 함유된 물질은 사용하지 않도록 해야 한다. 또는 불소가 함유되어 있더라도 패시베이션이 가능한 탄화플루오르(Fluoro-Carbon)계열의 플라즈마를 사용하도록 한다. 텅스텐 하부막으로 Ti, TiN, TaN, TiSiN, TiAlN, TaSiN을 사용한 경우에는 텅스텐을 식각하고 나서 Cl2 또는 Cl2/BCl3로 식각한다.Next, the tungsten film is etched by the plasma method using SF 6 / N 2 (approximately 10: 1) as an etchant using the photoresist pattern as an etching barrier. As a result, a tungsten hard mask is formed. In this case, when Ti, TiN, Pt, Ir, and Ru are deposited as the tungsten underlayer, the etch selectivity is naturally secured (since TiF 3 is nonvolatile), but there is no problem when Si 3 N 4 is deposited. In order to minimize the damage to the tungsten, the tungsten is etched using the EPD (End Point Detection) system. Subsequently, a chemical that does not damage the tungsten sidewall is selected to etch the tungsten underlayer. At this time, the material containing a lot of fluorine (Fluorine) should not be used. Alternatively, a fluorocarbon-based plasma capable of passivation may be used even if fluorine is contained. When Ti, TiN, TaN, TiSiN, TiAlN, TaSiN is used as the tungsten underlayer, tungsten is etched and then etched with Cl 2 or Cl 2 / BCl 3 .
삭제delete
이후, 공정에 따라서 포토레지스트 스트립을 진행하여 포토레지스트를 제거하고 순수하게 텅스텐 하드마스크만을 배리어로 사용하여 하부의 산화막을 식각하거나, 포토레지스트를 그대로 두고 산화막을 식각한다. Subsequently, the photoresist strip is processed to remove the photoresist and the lower oxide film is etched using purely a tungsten hard mask as a barrier, or the oxide film is etched with the photoresist as it is.
산화막 식각이 완료된 후에는 포토레지스트가 남아 있지 않을 것이므로 과수가 포함된 화학물질을 이용하여 텅스텐을 제거하거나 SF6/N2를 사용하여 적절한 타겟으로 텅스텐을 제거하는 것이 바람직하다. 텅스텐 하부막으로 Si3N4와 귀금속을 사용한 경우에는 산화막 식각후 건식 방식으로 텅스텐을 제거한다.Since the photoresist will not remain after the oxide etching is completed, it is preferable to remove tungsten using a chemical containing fruit or to remove tungsten with an appropriate target using SF 6 / N 2 . When Si 3 N 4 and a noble metal are used as the tungsten underlayer, tungsten is removed in a dry manner after etching the oxide layer.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.
Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
본 발명에 의하면, 텅스텐을 배리어로 사용하여 산화막을 식각해야 하는 공정에서 텅스텐 하부막으로 산소 소오스가 없는 박막을 추가 형성하므로써, 산소가 산화막에서 아웃개싱(Out-Gassing)되어 텅스텐에 어택을 주는 것을 방지한다. 결국, 텅스텐의 측벽 손상과 같은 어택을 방지하여 텅스텐 하드마스크의 배리어 기능을 향상시킨다.According to the present invention, oxygen is outgassed from the oxide film to attack the tungsten by additionally forming a thin film without oxygen source as the tungsten underlayer in the process of etching the oxide film using tungsten as a barrier. prevent. As a result, the barrier function of the tungsten hardmask is improved by preventing attacks such as damaging the sidewalls of tungsten.
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| US6420099B1 (en) * | 1999-08-02 | 2002-07-16 | Infineon Technologies Ag | Tungsten hard mask for dry etching aluminum-containing layers |
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| KR20000004332A (en) * | 1998-06-30 | 2000-01-25 | 김영환 | Method for forming metal wires of semiconductor devices |
| US6420099B1 (en) * | 1999-08-02 | 2002-07-16 | Infineon Technologies Ag | Tungsten hard mask for dry etching aluminum-containing layers |
| KR20020044895A (en) * | 2000-12-07 | 2002-06-19 | 박종섭 | Method for forming gateelectrode in semiconductor device |
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