KR100361532B1 - A method for manufacturing gate electrode of semiconductor device - Google Patents
A method for manufacturing gate electrode of semiconductor device Download PDFInfo
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- KR100361532B1 KR100361532B1 KR1020000034893A KR20000034893A KR100361532B1 KR 100361532 B1 KR100361532 B1 KR 100361532B1 KR 1020000034893 A KR1020000034893 A KR 1020000034893A KR 20000034893 A KR20000034893 A KR 20000034893A KR 100361532 B1 KR100361532 B1 KR 100361532B1
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- gate electrode
- dummy gate
- gas
- insulating film
- manufacturing
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 125000006850 spacer group Chemical group 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 15
- 239000008367 deionised water Substances 0.000 claims abstract description 14
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000011229 interlayer Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 10
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- -1 O 2 Chemical compound 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- 229910004013 NO 2 Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910019044 CoSix Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 2
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910008486 TiSix Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229960002050 hydrofluoric acid Drugs 0.000 claims 2
- 239000010408 film Substances 0.000 description 43
- 238000001312 dry etching Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 다마신(damascene)공정을 이용한 반도체소자의 게이트전극 제조방법에 관한 것으로서, 폴리-게르마늄(poly-Ge)으로 더미 게이트전극(dummy gate eletrode)을 형성하고, 상기 더미 게이트전극 측벽에 절연막 스페이서를 형성한 다음, 전체표면 상부에 층간절연막을 형성한 후, 후속공정으로 상기 더미 게이트전극을 탈이온수를 포함하는 습식케미칼 또는 O2플라즈마로 제거하여 게이트전극이 형성될 트렌치를 형성함으로써 상기 더미 게이트전극 제거 시 고가의 식각케미칼을 필요로 하지 않고 공정을 단순하게 하며 절연막 스페이서가 손상되는 것을 방지하여 소자의 동작 특성 및 수율을 향상시키는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a gate electrode of a semiconductor device using a damascene process, wherein a dummy gate eletrode is formed of poly-Ge, and an insulating film is formed on a sidewall of the dummy gate electrode. After forming a spacer, an interlayer insulating film is formed on the entire surface, and in the subsequent process, the dummy gate electrode is removed by a wet chemical or O 2 plasma containing deionized water to form a trench in which the gate electrode is to be formed. It is a technology that simplifies the process without the need for expensive etching chemicals to remove the gate electrode and prevents the insulating film spacer from being damaged, thereby improving the operation characteristics and yield of the device.
Description
본 발명은 반도체소자의 게이트전극 제조방법에 관한 것으로서, 특히 금속을 이용하여 게이트전극을 형성하는 경우, 다마신공정을 이용하여 게이트전극이 형성될 부분을 형성한 후 금속층으로 매립하여 게이트전극을 형성하는 반도체소자의 게이트전극 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a gate electrode of a semiconductor device. In particular, when a gate electrode is formed using a metal, a gate electrode is formed by forming a portion in which a gate electrode is to be formed using a damascene process and then filling the metal layer with a gate layer. A method of manufacturing a gate electrode of a semiconductor device.
일반적으로, 반도체 소자의 집적도가 증가함에 따라 게이트 산화막의 두께가 감소하게 되고, 그로인하여 게이트 산화막의 막질이 양호한 것을 요구하게 된다.In general, as the degree of integration of semiconductor elements increases, the thickness of the gate oxide film decreases, thereby requiring that the quality of the gate oxide film be good.
또한, 트랜지스터의 게이트 전극 패터닝 공정 후에 게이트 전극의 측벽 식각 손상의 회복과 게이트 전극의 활성화를 위하여 산화 공정을 실시하게 되는데 이때 게이트 산화막도 역시 산화되어 게이트 산화막의 에지(edge)가 두꺼워지는 게이트 버즈빅(bird's beak)현상이 발생한다.In addition, after the gate electrode patterning process of the transistor, an oxidation process is performed to recover the sidewall etching damage of the gate electrode and to activate the gate electrode. At this time, the gate oxide film is also oxidized to increase the edge of the gate oxide film. (bird's beak) phenomenon occurs.
그리고, 상기 게이트전극을 패터닝하는 과정에서 게이트전극의 과도 식각 시 게이트 산화막이 제거되어 반도체 기판이 손상(attack)을 받게 된다.In the process of patterning the gate electrode, when the gate electrode is excessively etched, the gate oxide layer is removed and the semiconductor substrate is damaged.
한편, 초고집적 소자를 구현하기 위해서는 저소비전력화와 초고속화가 필수적인데 이를 위해서는 게이트전극 또는 비트라인 등의 배선을 저항이 낮은 Cu 등의 금속층을 사용하여야 한다.On the other hand, low power consumption and high speed are essential to realize an ultra-high density device. For this purpose, a metal layer such as Cu having low resistance should be used for wiring of a gate electrode or a bit line.
상기 금속층을 이용하여 게이트전극을 형성하는 경우, 상기 금속층을 식각하기 어렵기 때문에 다결정실리콘층(poly-silicon)으로 더미 게이트전극(dummy gate electrode)을 미리 형성하고, 상기 더미 게이트전극의 측벽에 절연막스페이서를 형성한 다음, 전체표면 상부에 층간절연막을 형성하고, 상기 층간절연막을 화학적 기계적 연마(chemical mechanical polishing, 이하 CMP 라 함)방법으로 평탄화시켜 상기 더미 게이트전극을 노출시킨다.When the gate electrode is formed using the metal layer, since the metal layer is difficult to be etched, a dummy gate electrode is previously formed of a poly-silicon layer, and an insulating film is formed on the sidewall of the dummy gate electrode. After forming a spacer, an interlayer insulating film is formed over the entire surface, and the dummy gate electrode is exposed by planarizing the interlayer insulating film by chemical mechanical polishing (hereinafter, referred to as CMP).
그 후, 상기 더미 게이트전극을 습식식각공정을 제거하여 게이트전극이 형성될 트렌치를 형성하고, 전체표면 상부에 게이트전극용 금속층을 형성한 다음, CMP공정으로 상기 금속층을 평탄화시켜 금속층을 형성된 게이트전극을 형성하였다.Thereafter, the dummy gate electrode is removed by a wet etching process to form a trench in which the gate electrode is to be formed, a gate electrode metal layer is formed on the entire surface, and the metal layer is formed by planarizing the metal layer by a CMP process. Formed.
그러나, 상기와 같이 종래기술에 따른 반도체소자의 게이트전극 형성방법은, 더미 게이트전극 물질으로 사용되는 다결정실리콘층을 제거할 때 강한 산(acid)계열의 케미칼(chemical)을 이용하거나, 건식식각방법을 이용하여 식각하여 공정이 복잡하고, 공정 도중에 절연막 스페이서 물질으로 사용되는 산화막 또는 질화막을 손상시켜 소자의 공정 특성 및 수율을 저하시키는 문제점이 있다.However, as described above, the gate electrode forming method of the semiconductor device according to the related art uses a strong acid-based chemical or a dry etching method when removing the polycrystalline silicon layer used as the dummy gate electrode material. The etching process is complicated, and there is a problem in that the oxide film or nitride film used as the insulating film spacer material is damaged during the process, thereby lowering the process characteristics and yield of the device.
본 발명은 상기와 같은 문제점을 해결하기 위한 것으로서, 폴리-게르마늄막을 이용하여 더미 게이트전극을 형성하고, 상기 더미 게이트전극 측벽에 절연막 스페이서를 형성한 다음, 전체표면 상부에 층간절연막을 형성한 후, 상기 층간절연막을 CMP공정으로 평탄화시킨 다음, 노출되는 상기 더미 게이트전극을 식각하여 게이트전극이 형성될 트렌치를 형성한 후 금속층을 형성하고 CMP공정으로 평탄화시켜 게이트전극을 형성함으로써 종래 보다 공정이 간단하고, 더미 게이트전극 식각 시 절연막 스페이서가 손상되는 것을 방지하여 공정수율 및 소자 동작의 신뢰성을 향상시킬 수 있는 반도체소자의 게이트전극 제조방법을 제공함에 있다.The present invention is to solve the above problems, after forming a dummy gate electrode using a poly-germanium film, forming an insulating film spacer on the side wall of the dummy gate electrode, and then forming an interlayer insulating film over the entire surface, After the planarization of the interlayer insulating film is performed by CMP process, the exposed dummy gate electrode is etched to form a trench to form a gate electrode, and then a metal layer is formed and planarized by CMP process to form a gate electrode. In addition, the present invention provides a method of manufacturing a gate electrode of a semiconductor device, which prevents damage to an insulating layer spacer during etching of a dummy gate electrode, thereby improving process yield and device operation reliability.
도 1 내지 도 5 는 본 발명에 따른 반도체소자의 게이트전극 제조방법을 도시한 단면도.1 to 5 are cross-sectional views illustrating a method for manufacturing a gate electrode of a semiconductor device according to the present invention.
< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>
10 : 반도체기판 12a : 희생막10: semiconductor substrate 12a: sacrificial film
12b : 희생막패턴 14 : 더미 게이트전극12b: sacrificial layer pattern 14: dummy gate electrode
16 : 절연막 스페이서 18 : 층간절연막16 insulating film spacer 18 interlayer insulating film
20 : 트렌치 22 : 게이트절연막20: trench 22: gate insulating film
24 : 게이트전극24: gate electrode
상기와 같은 목적을 달성하기 위한 본 발명에 따른 반도체소자의 게이트전극 제조방법은,Method for manufacturing a gate electrode of a semiconductor device according to the present invention for achieving the above object,
반도체기판 상부에 희생막을 소정 두께 형성하고, 상기 희생막 상부에 폴리-게르마늄막 패턴으로 형성되는 더미 게이트전극을 형성하는 공정과,Forming a sacrificial film on the semiconductor substrate at a predetermined thickness, and forming a dummy gate electrode formed on the sacrificial film on a poly-germanium film pattern;
전체표면 상부에 절연막을 형성하고, 상기 절연막과 희생막을 전면식각하여상기 더미 게이트전극의 측벽에 절연막 스페이서과 상기 더미 게이트전극 및 절연막 스페이서 하부에 희생막 패턴을 형성하는 공정과,Forming an insulating film on the entire surface, and etching the entire insulating film and the sacrificial film to form an insulating film spacer and a sacrificial film pattern under the dummy gate electrode and the insulating film spacer on sidewalls of the dummy gate electrode;
전체표면 상부에 층간절연막을 형성하는 공정과,Forming an interlayer insulating film over the entire surface;
상기 층간절연막을 화학적 기계적 연마공정으로 평탄화시켜 상기 더미 게이트전극을 노출시키는 공정과,Exposing the dummy gate electrode by planarizing the interlayer insulating film by a chemical mechanical polishing process;
상기 더미 게이트전극 및 희생막 패턴을 제거하여 게이트전극이 형성될 트렌치를 형성하는 공정과,Forming a trench in which a gate electrode is to be formed by removing the dummy gate electrode and the sacrificial layer pattern;
상기 트렌치의 저부에 게이트절연막을 형성하는 공정과,Forming a gate insulating film at the bottom of the trench;
전체표면 상부에 금속층을 형성하고, 상기 금속층을 화학적 기계적 연마공정으로 평탄화시켜 상기 트렌치를 매립시키는 게이트전극을 형성하는 공정을 포함하는 것을 특징으로 한다.And forming a gate electrode to fill the trench by forming a metal layer on the entire surface, and planarizing the metal layer by a chemical mechanical polishing process.
이하, 본 발명에 따른 반도체소자의 제조방법에 관하여 첨부 도면을 참조하여 상세히 설명한다.Hereinafter, a method of manufacturing a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.
도 1 내지 도 5 는 본 발명에 따른 반도체소자의 게이트전극 제조방법을 도시한 단면도이다.1 to 5 are cross-sectional views illustrating a method of manufacturing a gate electrode of a semiconductor device according to the present invention.
먼저, 반도체기판(10)에서 소자분리 영역으로 예정되는 부분에 소자분리절연막(도시안됨)을 형성하고, 나머지 부분 희생막(12a)을 형성한다. 이때, 상기 희생막(12a)은 SiO2, Al2O3, Ta2O3또는 SiON막으로 형성한다.First, an isolation layer (not shown) is formed on a portion of the semiconductor substrate 10 that is intended as an isolation region, and the remaining portion sacrificial layer 12a is formed. In this case, the sacrificial film 12a is formed of SiO 2 , Al 2 O 3 , Ta 2 O 3, or SiON film.
다음, 상기 희생막(12a) 상부에 폴리-게르마늄(poly-Ge)막(도시안됨)을 형성하고, 게이트전극 마스크를 식각마스크로 상기 폴리-게르마늄막을 식각하여 더미 게이트전극(14)을 형성한다.Next, a poly-Ge film (not shown) is formed on the sacrificial layer 12a, and the dummy germanium layer is etched using a gate electrode mask as an etch mask to form a dummy gate electrode 14. .
이때, 상기 폴리-게르마늄막은 O2, NO, NO2, CO 및 CO2와 같이 산소를 포함하는 가스를 주식각가스로 이용하여 식각하고, 상기 주식각가스에 CF4, CHF3, C2F4, C2F6, C3F8, C4F6, C4F8, NF3, SF6등의 불소를 함유하는 가스 또는 Cl2, BCl3또는 HBr 등의 할로겐가스를 포함하는 가스 또는 He, Ne, Ar 또는 Xe 등의 불활성가스를 첨가하여 더미 게이트전극(14)의 식각형상 및 식각속도를 조절하고, 특히 상기 불활성가스는 플라즈마 균일도를 조절하고, 이온스퍼터링 효과를 나타내어 상기 폴리-게르마늄막의 식각을 용이하게 한다.In this case, the poly-germanium film is etched using a gas containing oxygen, such as O 2 , NO, NO 2 , CO and CO 2 as a stock angle gas, CF 4 , CHF 3 , C 2 F Gas containing fluorine such as 4 , C 2 F 6 , C 3 F 8 , C 4 F 6 , C 4 F 8 , NF 3 , SF 6 or halogen gas such as Cl 2 , BCl 3 or HBr Or by adding an inert gas such as He, Ne, Ar, or Xe to adjust the etch shape and the etching rate of the dummy gate electrode 14, in particular, the inert gas controls the plasma uniformity and exhibits an ion sputtering effect. Easily etch the germanium film.
또한, 상기 폴리-게르마늄막은 상기 주식각가스에 불소를 함유하는 가스, 할로겐가스 및 불활성가스를 모두 혼합한 가스를 이용하여 식각할 수도 있다.In addition, the poly-germanium film may be etched using a gas obtained by mixing a fluorine-containing gas, a halogen gas and an inert gas in the stock corner gas.
다음, 전체표면 상부에 절연막(도시안됨)을 형성하고, 전면식각공정을 실시하여 상기 더미 게이트전극(14)의 측벽에 절연막 스페이서(16)를 형성한다. 이때, 상기 전면식각공정 시 상기 희생막(12a)은 식각되어 상기 더미 게이트전극(14) 및 절연막 스페이서(16)의 하부에 희생막 패턴(12b)으로 형성된다.Next, an insulating film (not shown) is formed over the entire surface, and an entire surface etching process is performed to form an insulating film spacer 16 on the sidewall of the dummy gate electrode 14. In this case, the sacrificial layer 12a is etched during the entire surface etching process to form a sacrificial layer pattern 12b under the dummy gate electrode 14 and the insulating layer spacer 16.
그 다음, 전체표면 상부에 층간절연막(18)을 형성하고, 화학적 기계적 연마(chemical mechanical polishing, 이하 CMP 라 함)공정으로 평탄화시켜 상기 더미 게이트전극(14)을 노출시킨다.Next, an interlayer insulating film 18 is formed over the entire surface, and the dummy gate electrode 14 is exposed by planarization by a chemical mechanical polishing (hereinafter referred to as CMP) process.
다음, 상기 노출된 더미 게이트전극(14)을 제거하여 게이트전극으로 예정되는 부분을 노출시키는 트렌치(20)를 형성한다. 이때, 상기 트렌치(20) 저부에 희생막(12b)패턴이 제거되어 반도체기판(10)이 노출된다.Next, the exposed dummy gate electrode 14 is removed to form a trench 20 exposing a portion intended as the gate electrode. In this case, the sacrificial layer 12b pattern is removed from the bottom of the trench 20 to expose the semiconductor substrate 10.
상기 더미 게이트전극(14) 및 희생막패턴(12b)은 건식 또는 습식식각방법으로 제거할 수 있다.The dummy gate electrode 14 and the sacrificial layer pattern 12b may be removed by a dry or wet etching method.
먼저, 상기 건식식각방법은 O2, NO, NO2, CO 및 CO2와 같이 산소를 포함하는 가스를 주식각가스로 이용하고, 상기 주식각가스에 CF4, CHF3, C2F4, C2F6, C3F8, C4F6, C4F8, NF3및 SF6등의 불소를 함유하는 가스 또는 He, Ne, Ar 및 Xe 등의 불활성가스를 포함하는 가스를 첨가시킨 혼합가스를 이용하여 실시한다.First, the dry etching method uses a gas containing oxygen, such as O 2 , NO, NO 2 , CO and CO 2 as a stock angle gas, CF 4 , CHF 3 , C 2 F 4 , Add a gas containing fluorine such as C 2 F 6 , C 3 F 8 , C 4 F 6 , C 4 F 8 , NF 3 and SF 6 or a gas containing inert gas such as He, Ne, Ar, and Xe It is carried out using the mixed gas.
또한, 상기 건식식각방법은 상기 주식각가스에 불소를 함유하는 가스와 불활성가스를 혼합한 가스를 이용하여 실시할 수도 있다.In addition, the dry etching method may be performed by using a gas obtained by mixing a gas containing fluorine and an inert gas in the stock corner gas.
그리고, 상기 건식식각방법으로 O2플라즈마를 이용하는 방법이 있다. 상기 O2플라즈마를 이용한 방법은 GeO2의 휘발성을 이용하고, 상기 희생막패턴(12b)과 반도체기판(10)에 대한 고선택비를 확보하여 플라즈마에 의한 손상을 줄일 수 있다.In addition, there is a method of using O 2 plasma as the dry etching method. The method using the O 2 plasma utilizes the volatility of GeO 2 and secures a high selectivity for the sacrificial film pattern 12b and the semiconductor substrate 10, thereby reducing damage caused by plasma.
다음, 상기 습식식각방법은 탈이온수 또는 탈이온수/불산(HF) 혼합용액 또는 탈이온수/NH4F/불산 혼합용액 또는 탈이온수/과산화수소수(H2O2)/황산용액(H2SO4) 등과 같이 탈이온수를 함유하는 습식케미칼을 이용한다.Next, the wet etching method is deionized water or deionized water / hydrofluoric acid (HF) mixed solution or deionized water / NH 4 F / hydrofluoric acid mixed solution or deionized water / hydrogen peroxide (H 2 O 2 ) / sulfuric acid solution (H 2 SO 4 Wet chemicals containing deionized water are used.
한편, 상기 습식식각방법을 실시한 후에는 세정공정을 실시해야 하므로, 상기와 같이 습식식각공정을 별도로 실시하지 않고 상기 CMP공정 후 상기 탈이온수를함유하는 습식케미칼을 이용하여 세정공정을 실시하여 더미 게이트전극(14) 및 희생막패턴(12b)을 제거하거나, 후속공정으로 금속층을 형성하기 전에 실시하는 전세정공정(precleaning)공정으로 상기 더미 게이트전극(14) 및 희생막패턴(12b)을 제거할 수 있다.On the other hand, since the cleaning process should be performed after the wet etching method, the cleaning process is performed using a wet chemical containing deionized water after the CMP process without performing the wet etching process as described above. The dummy gate electrode 14 and the sacrificial layer pattern 12b may be removed by a precleaning process performed before the electrode 14 and the sacrificial layer pattern 12b are removed or before the metal layer is formed in a subsequent process. Can be.
그 다음, 상기 트렌치(20) 저부에 게이트절연막(22)을 형성하고, 전체표면 상부에 금속층(도시안됨)을 형성한 다음, 상기 금속층을 CMP공정으로 평탄화시켜 상기 트렌치(20)를 매립시키는 게이트전극(24)을 형성한다. 이때, 상기 게이트절연막(22)은 상기 희생막(12a)과 같은 종류의 박막을 이용하여 형성한다.Next, a gate insulating film 22 is formed on the bottom of the trench 20, a metal layer (not shown) is formed on the entire surface of the gate 20, and then the gate of the trench 20 is buried by planarizing the metal layer by a CMP process. The electrode 24 is formed. In this case, the gate insulating layer 22 is formed using a thin film of the same type as the sacrificial layer 12a.
이때, 상기 금속층은 저항이 작은 금속물질으로서 텅스텐(W), 알루미늄(Al), 코발트실리사이드(CoSix), 티타늄실리사이드(TiSix) 또는 구리(Cu) 등으로 형성한다.In this case, the metal layer is formed of tungsten (W), aluminum (Al), cobalt silicide (CoSix), titanium silicide (TiSix), copper (Cu), or the like as a metal material having a low resistance.
이상에서 설명한 바와 같이, 본 발명에 따른 반도체소자의 제조방법은, 폴리-게르마늄(poly-Ge)으로 더미 게이트전극(dummy gate eletrode)을 형성하고, 상기 더미 게이트전극 측벽에 절연막 스페이서를 형성한 다음, 전체표면 상부에 층간절연막을 형성한 후, 후속공정으로 상기 더미 게이트전극을 탈이온수를 포함하는 습식케미칼 또는 O2플라즈마로 제거하여 게이트전극이 형성될 트렌치를 형성함으로써 상기 더미 게이트전극 제거 시 고가의 식각케미칼을 필요로 하지 않고 공정을 단순하게 하며 절연막 스페이서가 손상되는 것을 방지하여 소자의 동작 특성 및 수율을 향상시키는 이점이 있다.As described above, in the method of manufacturing a semiconductor device according to the present invention, a dummy gate electrode is formed of poly-germanium (Ge), and an insulating film spacer is formed on the sidewalls of the dummy gate electrode. After the interlayer insulating layer is formed over the entire surface, the dummy gate electrode is removed by a wet chemical or O 2 plasma containing deionized water in a subsequent process to form a trench in which the gate electrode is to be formed. There is an advantage of improving the operation characteristics and the yield of the device by simplifying the process and preventing the insulating film spacer from being damaged without requiring an etching chemical.
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