KR100907564B1 - 유기전계발광 소자용 발광층 조성물 및 이를 이용한 유기전계발광 소자 - Google Patents
유기전계발광 소자용 발광층 조성물 및 이를 이용한 유기전계발광 소자 Download PDFInfo
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- KR100907564B1 KR100907564B1 KR1020070065166A KR20070065166A KR100907564B1 KR 100907564 B1 KR100907564 B1 KR 100907564B1 KR 1020070065166 A KR1020070065166 A KR 1020070065166A KR 20070065166 A KR20070065166 A KR 20070065166A KR 100907564 B1 KR100907564 B1 KR 100907564B1
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- GVOISEJVFFIGQE-YCZSINBZSA-N n-[(1r,2s,5r)-5-[methyl(propan-2-yl)amino]-2-[(3s)-2-oxo-3-[[6-(trifluoromethyl)quinazolin-4-yl]amino]pyrrolidin-1-yl]cyclohexyl]acetamide Chemical compound CC(=O)N[C@@H]1C[C@H](N(C)C(C)C)CC[C@@H]1N1C(=O)[C@@H](NC=2C3=CC(=CC=C3N=CN=2)C(F)(F)F)CC1 GVOISEJVFFIGQE-YCZSINBZSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
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- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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Abstract
Description
Claims (12)
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- 기판 상에 형성되는 제1 전극;상기 제1 전극 상에 형성되며, 제7항에 따른 유기전계발광 소자용 발광층 조성물로 형성되는 유기박막층; 및상기 유기박막층 상에 형성되는 제2 전극을 포함하는 유기전계발광 소자.
- 제8항에 있어서,상기 유기박막층은상기 제1 전극층 상에 형성되며 정공의 주입, 수송하는 제1 버퍼층, 상기 제1 버퍼층 상에 형성되는 발광층, 상기 발광층 상에 형성되며, 전자의 주입, 수송하는 제2 버퍼층 중 하나 이상의 층을 포함하는 것을 특징으로 하는 유기전계발광 소자.
- 제8항에 있어서,상기 제1 전극은 ITO 및 IZO 중에서 선택된 투명전도성 금속산화물인 것을 특징으로 하는 유기전계발광 소자.
- 제8항에 있어서,상기 기판은 유리기판 또는 플렉서블기판인 것을 특징으로 유기전계발광 소자.
- 제8항에 있어서,상기 발광층은 스핀코팅법, 잉크젯법, 캐스팅법 및 진공증착법 중 하나의 방법으로 형성하는 것을 특징으로 하는 유기전계발광 소자.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020070065166A KR100907564B1 (ko) | 2007-06-29 | 2007-06-29 | 유기전계발광 소자용 발광층 조성물 및 이를 이용한 유기전계발광 소자 |
PCT/KR2008/003826 WO2009005272A2 (en) | 2007-06-29 | 2008-06-30 | Organometallic complex compounds for organic light emitting display device and organic light emitting display device including the same |
TW097124496A TWI487770B (zh) | 2007-06-29 | 2008-06-30 | 用在有機發光顯示元件之有機金屬錯合化合物及包含其之有機發光顯示元件 |
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KR1020070065166A KR100907564B1 (ko) | 2007-06-29 | 2007-06-29 | 유기전계발광 소자용 발광층 조성물 및 이를 이용한 유기전계발광 소자 |
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KR1020090051130A Division KR100942826B1 (ko) | 2009-06-09 | 2009-06-09 | 유기전계발광 소자용 발광층 조성물 및 이를 이용한 유기전계발광 소자 |
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KR20090001072A KR20090001072A (ko) | 2009-01-08 |
KR100907564B1 true KR100907564B1 (ko) | 2009-07-14 |
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KR1020070065166A KR100907564B1 (ko) | 2007-06-29 | 2007-06-29 | 유기전계발광 소자용 발광층 조성물 및 이를 이용한 유기전계발광 소자 |
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KR (1) | KR100907564B1 (ko) |
TW (1) | TWI487770B (ko) |
WO (1) | WO2009005272A2 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010137601A1 (en) | 2009-05-29 | 2010-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Fluorene derivative, light-emitting element, light-emitting device, electronic device, and lighting device |
DE102009041414A1 (de) | 2009-09-16 | 2011-03-17 | Merck Patent Gmbh | Metallkomplexe |
TW201326361A (zh) * | 2011-09-28 | 2013-07-01 | Solvay | 發光材料 |
EP2871222B1 (en) | 2012-07-04 | 2017-04-26 | Samsung SDI Co., Ltd. | Compound for organic optoelectric device, organic optoelectric device comprising same, and display apparatus comprising organic optoelectric device |
JP6119171B2 (ja) * | 2012-10-05 | 2017-04-26 | 三菱化学株式会社 | イリジウム錯体化合物、該化合物及び溶剤を含有する組成物、該化合物を含有する有機電界発光素子、表示装置及び照明装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20040026663A1 (en) | 2002-08-09 | 2004-02-12 | Helmut-Werner Heuer | Polynuclear metal complexes as phosphorescence emitters in electroluminescent layer arrangements |
KR20060045856A (ko) * | 2004-04-28 | 2006-05-17 | 제이에스알 가부시끼가이샤 | 인광 발광성 중합체 및 그의 제조 방법, 유기 전계발광소자, 및 금속 착체 함유 화합물 및 그의 제조 방법 |
KR20070042554A (ko) * | 2004-07-21 | 2007-04-23 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 발광 전기화학 전지 |
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- 2007-06-29 KR KR1020070065166A patent/KR100907564B1/ko active IP Right Grant
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2008
- 2008-06-30 WO PCT/KR2008/003826 patent/WO2009005272A2/en active Application Filing
- 2008-06-30 TW TW097124496A patent/TWI487770B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040026663A1 (en) | 2002-08-09 | 2004-02-12 | Helmut-Werner Heuer | Polynuclear metal complexes as phosphorescence emitters in electroluminescent layer arrangements |
KR20060045856A (ko) * | 2004-04-28 | 2006-05-17 | 제이에스알 가부시끼가이샤 | 인광 발광성 중합체 및 그의 제조 방법, 유기 전계발광소자, 및 금속 착체 함유 화합물 및 그의 제조 방법 |
KR20070042554A (ko) * | 2004-07-21 | 2007-04-23 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 발광 전기화학 전지 |
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WO2009005272A2 (en) | 2009-01-08 |
KR20090001072A (ko) | 2009-01-08 |
WO2009005272A3 (en) | 2009-03-12 |
TW200923047A (en) | 2009-06-01 |
TWI487770B (zh) | 2015-06-11 |
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