KR100907109B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

Info

Publication number
KR100907109B1
KR100907109B1 KR1020020058297A KR20020058297A KR100907109B1 KR 100907109 B1 KR100907109 B1 KR 100907109B1 KR 1020020058297 A KR1020020058297 A KR 1020020058297A KR 20020058297 A KR20020058297 A KR 20020058297A KR 100907109 B1 KR100907109 B1 KR 100907109B1
Authority
KR
South Korea
Prior art keywords
high frequency
frequency antenna
processing apparatus
plasma processing
dielectric
Prior art date
Application number
KR1020020058297A
Other languages
English (en)
Korean (ko)
Other versions
KR20030028394A (ko
Inventor
사사키가즈오
스에키히데히토
사토요시츠토무
니시무라미치오
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20030028394A publication Critical patent/KR20030028394A/ko
Application granted granted Critical
Publication of KR100907109B1 publication Critical patent/KR100907109B1/ko

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32871Means for trapping or directing unwanted particles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645Radiofrequency discharges
    • H05H1/4652Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020020058297A 2001-09-27 2002-09-26 플라즈마 처리 장치 KR100907109B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001297724 2001-09-27
JPJP-P-2001-00297724 2001-09-27

Publications (2)

Publication Number Publication Date
KR20030028394A KR20030028394A (ko) 2003-04-08
KR100907109B1 true KR100907109B1 (ko) 2009-07-09

Family

ID=37417122

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020058297A KR100907109B1 (ko) 2001-09-27 2002-09-26 플라즈마 처리 장치

Country Status (3)

Country Link
JP (1) JP4074168B2 (ja)
KR (1) KR100907109B1 (ja)
TW (1) TWI290810B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011258622A (ja) * 2010-06-07 2011-12-22 Tokyo Electron Ltd プラズマ処理装置及びその誘電体窓構造
JP5606821B2 (ja) * 2010-08-04 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
KR102035810B1 (ko) * 2013-02-28 2019-10-23 엘지전자 주식회사 조리기기
KR102278074B1 (ko) * 2014-06-30 2021-07-19 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102075090B1 (ko) 2017-11-08 2020-02-07 아주대학교산학협력단 담도 폐쇄 모니터링 시스템 및 방법
WO2020246523A1 (ja) * 2019-06-05 2020-12-10 日新電機株式会社 プラズマ処理装置
JP2022185603A (ja) * 2021-06-03 2022-12-15 株式会社アルバック プラズマ処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098010A (ja) * 1995-06-16 1997-01-10 Tokyo Electron Ltd プラズマ処理装置
KR19990030256A (ko) * 1997-09-30 1999-04-26 이노우에 쥰이치 플라즈마 처리 장치
KR20000005308A (ko) * 1998-10-09 2000-01-25 가나이 쓰도무 플라즈마 처리장치
KR20000077209A (ko) * 1999-05-13 2000-12-26 히가시 데쓰로 유도 결합 플라즈마 처리 장치
US20010015175A1 (en) * 2000-02-21 2001-08-23 Toshio Masuda Plasma processing system and apparatus and a sample processing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098010A (ja) * 1995-06-16 1997-01-10 Tokyo Electron Ltd プラズマ処理装置
KR19990030256A (ko) * 1997-09-30 1999-04-26 이노우에 쥰이치 플라즈마 처리 장치
KR20000005308A (ko) * 1998-10-09 2000-01-25 가나이 쓰도무 플라즈마 처리장치
KR20000077209A (ko) * 1999-05-13 2000-12-26 히가시 데쓰로 유도 결합 플라즈마 처리 장치
US20010015175A1 (en) * 2000-02-21 2001-08-23 Toshio Masuda Plasma processing system and apparatus and a sample processing method

Also Published As

Publication number Publication date
TWI290810B (en) 2007-12-01
JP4074168B2 (ja) 2008-04-09
KR20030028394A (ko) 2003-04-08
JP2003209098A (ja) 2003-07-25

Similar Documents

Publication Publication Date Title
US6245202B1 (en) Plasma treatment device
US6344105B1 (en) Techniques for improving etch rate uniformity
TWI791027B (zh) 具有低頻射頻功率分佈調節功能的電漿反應器
TW421814B (en) High frequency discharging method, its apparatus, and high frequency processing apparatus
KR100642157B1 (ko) 플라즈마 처리 장치 및 방법 그리고 플라즈마 생성용전극판
US20060196605A1 (en) Method and apparatus for plasma processing
EP0743671A2 (en) Method and apparatus for plasma processing apparatus
WO2004049420A1 (ja) プラズマ処理装置及び方法
JP2000119851A (ja) 金属製及び誘電体膜をスパッタリングする高密度誘導結合高周波プラズマ源を供給するマグネトロンリアクタ
KR102432857B1 (ko) 플라즈마 처리 장치 및 이를 이용한 반도체 소자의 제조 방법
CN110880443B (zh) 等离子处理装置
KR20080055729A (ko) 플라즈마 처리 챔버에서 플라즈마에 노출되는 포트에서의아킹을 방지하기 위한 방법 및 장치
TWI634585B (zh) 電漿處理裝置及電漿分布調整方法
KR100907109B1 (ko) 플라즈마 처리 장치
JP6769127B2 (ja) プラズマ処理装置
TWI777045B (zh) 極板間距可調容性耦合等離子體處理系統及其方法
KR20090009369A (ko) 히터가 설치된 유도 결합 플라즈마 소스를 구비한 플라즈마반응기
TWI723406B (zh) 電漿處理裝置
TWI803670B (zh) 電漿處理裝置
KR20070112662A (ko) 유도 결합 플라즈마 반응기
JP2002110649A (ja) プラズマ処理装置
US20230162947A1 (en) High density plasma enhanced process chamber
KR20080070125A (ko) 유도 결합 플라즈마 반응기
KR100592241B1 (ko) 유도결합형 플라즈마 처리장치
KR20040067977A (ko) 유도 결합 플라즈마 처리 장치

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130621

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20140626

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20150618

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20160617

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20170616

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20180618

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20190618

Year of fee payment: 11