KR100901982B1 - 접착강도 시험장치 - Google Patents
접착강도 시험장치 Download PDFInfo
- Publication number
- KR100901982B1 KR100901982B1 KR1020070069983A KR20070069983A KR100901982B1 KR 100901982 B1 KR100901982 B1 KR 100901982B1 KR 1020070069983 A KR1020070069983 A KR 1020070069983A KR 20070069983 A KR20070069983 A KR 20070069983A KR 100901982 B1 KR100901982 B1 KR 100901982B1
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- KR
- South Korea
- Prior art keywords
- wafer
- adhesive
- test
- polishing
- head
- Prior art date
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- 238000012360 testing method Methods 0.000 title claims abstract description 96
- 239000000853 adhesive Substances 0.000 title claims abstract description 84
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 84
- 238000001035 drying Methods 0.000 claims abstract description 21
- 238000007718 adhesive strength test Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 description 104
- 235000012431 wafers Nutrition 0.000 description 92
- 239000002002 slurry Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (7)
- 대상물과의 접착강도 시험의 대상이 되고, 상기 대상물에 제공되는 피시험체;상기 대상물을 고정시키는 척;상기 피시험체에 의해 상기 대상물과 접착되는 접착헤드;상기 피시험체와 상기 접착헤드를 접착시키기 위해 상기 피시험체를 건조시키는 건조유닛;상기 척에 상기 대상물이 고정된 상태에서 상기 접착헤드를 상기 대상물에 대해 멀어지는 방향으로 인장시킴으로써 상기 피시험체에 하중을 인가하는 하중 인가부; 및상기 하중 인가부에서 인가되는 하중을 측정하는 측정부;를 포함하는 접착강도 시험장치.
- 제1항에 있어서,상기 대상물은 웨이퍼 또는 세라믹 블록 중 어느 하나 인 것을 특징으로 하는 접착강도 시험장치.
- 제1항에 있어서,상기 피시험체는 왁스를 포함하는 것을 특징으로 하는 접착강도 시험장치.
- 제1항에 있어서,상기 척은 상기 대상물에 진공을 제공하여 상기 대상물을 고정시키는 진공척인 것을 특징으로 하는 접착강도 시험장치.
- 삭제
- 제1항에 있어서,상기 건조유닛은 상기 피시험체에 열을 제공하는 가열장치인 것을 특징으로 하는 접착강도 시험장치.
- 제1항에 있어서,상기 건조유닛은 상기 척에 제공되는 것을 특징으로 하는 접착강도 시험장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070069983A KR100901982B1 (ko) | 2007-07-12 | 2007-07-12 | 접착강도 시험장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070069983A KR100901982B1 (ko) | 2007-07-12 | 2007-07-12 | 접착강도 시험장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090006550A KR20090006550A (ko) | 2009-01-15 |
KR100901982B1 true KR100901982B1 (ko) | 2009-06-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020070069983A KR100901982B1 (ko) | 2007-07-12 | 2007-07-12 | 접착강도 시험장치 |
Country Status (1)
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11808693B2 (en) | 2018-10-26 | 2023-11-07 | Lg Energy Solution, Ltd. | Apparatus for measuring peel strength of battery part using electromagnet and peel strength measurement method using the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990033104A (ko) * | 1997-10-23 | 1999-05-15 | 윤종용 | 표면실장형 패키지의 접착강도 테스트 방법 |
KR20040010566A (ko) * | 2001-07-19 | 2004-01-31 | 가부시키가이샤 니콘 | 연마체, 화학 기계적 연마 장치 및 반도체 디바이스의제조 방법 |
KR20060106838A (ko) * | 2004-01-16 | 2006-10-12 | 샤프 가부시키가이샤 | 기판 흡착 기기 및 기판 접착 기기 |
KR20070028611A (ko) * | 2004-08-02 | 2007-03-12 | 동경 엘렉트론 주식회사 | 접촉 하중 측정 장치 및 검사 장치 |
-
2007
- 2007-07-12 KR KR1020070069983A patent/KR100901982B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990033104A (ko) * | 1997-10-23 | 1999-05-15 | 윤종용 | 표면실장형 패키지의 접착강도 테스트 방법 |
KR20040010566A (ko) * | 2001-07-19 | 2004-01-31 | 가부시키가이샤 니콘 | 연마체, 화학 기계적 연마 장치 및 반도체 디바이스의제조 방법 |
KR20060106838A (ko) * | 2004-01-16 | 2006-10-12 | 샤프 가부시키가이샤 | 기판 흡착 기기 및 기판 접착 기기 |
KR20070028611A (ko) * | 2004-08-02 | 2007-03-12 | 동경 엘렉트론 주식회사 | 접촉 하중 측정 장치 및 검사 장치 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11808693B2 (en) | 2018-10-26 | 2023-11-07 | Lg Energy Solution, Ltd. | Apparatus for measuring peel strength of battery part using electromagnet and peel strength measurement method using the same |
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Publication number | Publication date |
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KR20090006550A (ko) | 2009-01-15 |
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