WO2021135849A1 - 一种晶圆抛光装置 - Google Patents

一种晶圆抛光装置 Download PDF

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Publication number
WO2021135849A1
WO2021135849A1 PCT/CN2020/134400 CN2020134400W WO2021135849A1 WO 2021135849 A1 WO2021135849 A1 WO 2021135849A1 CN 2020134400 W CN2020134400 W CN 2020134400W WO 2021135849 A1 WO2021135849 A1 WO 2021135849A1
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WIPO (PCT)
Prior art keywords
wafer
polishing
polishing pad
clamping
pad
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PCT/CN2020/134400
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English (en)
French (fr)
Inventor
艾佳瑞
廖桂波
丁新琪
焦旺
吴阳烽
Original Assignee
深圳市中光工业技术研究院
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Publication of WO2021135849A1 publication Critical patent/WO2021135849A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation

Definitions

  • This application relates to the field of semiconductor technology, in particular to a wafer polishing device.
  • wafers are widely used in the light-emitting chips of lasers and light-emitting diodes.
  • the wafers need to be thinned to a certain extent to meet the processing requirements.
  • the surface of the wafer is uneven, and there is a large surface stress, which makes it easy to produce wafer bending in the subsequent process. Therefore, it is necessary to polish the thinned wafer.
  • the existing CMP (Chemical Mechanical Polishing, chemical mechanical polishing) polishing process similar to the general polishing process, the wafer is in contact with the polishing plate, through the transmission friction between each other, and the special polishing slurry is used for polishing, but due to the polishing accuracy level and semiconductor The characteristics of the material itself cannot achieve good wafer surface flatness in actual operation.
  • CMP Chemical Mechanical Polishing, chemical mechanical polishing
  • the main problem to be solved by this application is to provide a wafer polishing device, which can control the intensity of polishing through a counterweight, reduce damage to the wafer, and improve the quality of the product.
  • a wafer polishing device which includes a supporting device and a clamping device;
  • the supporting device includes a supporting base and a polishing pad arranged on the supporting base;
  • the clamping device includes a counterweight, a clamping base and a buffer pad.
  • the counterweight is arranged on a side of the clamping base, and the buffer pad is arranged on a side of the clamping base away from the counterweight;
  • the clamping device is used to contact the wafer with the polishing pad
  • the counterweight is used to adjust the clamping force of the clamping device
  • the buffer pad is bonded to the non-polished surface of the wafer.
  • the buffer pad includes a high temperature tape or photoresist, and the high temperature tape is a polyimide film.
  • the polishing pad is provided with at least one groove or hole, the grooves or holes are uniformly or non-uniformly distributed on the polishing pad, and the shape of the groove or hole includes a triangle, a rectangle, or a circle.
  • the polishing pad is provided with a plurality of concentric annular grooves, wherein the radial distance between the annular grooves is equal or unequal.
  • the wafer polishing device further includes a water spray device, which is arranged above the polishing pad, and the water spray device is used to spray water on the polishing pad after the polishing process is completed.
  • the polishing pad is a piezoelectric polishing pad
  • the wafer polishing device further includes a voltage detection device connected to the piezoelectric polishing pad, and the voltage detection device is used to apply pressure to the surface of the piezoelectric polishing pad. Perform detection and adjust the weight of the weight corresponding to different areas of the polishing pad according to the local difference in the squeezing force.
  • the wafer polishing apparatus further includes a thickness detection device located above the polishing pad, and the thickness detection device is used to dynamically detect the thickness of the polishing pad.
  • the distance from the thickness detecting device to the center of the polishing pad is approximately equal to the distance from the center of the clamping device to the center of the polishing pad.
  • the wafer polishing apparatus further includes a controller connected to the thickness detection device, wherein the controller is also connected to the clamping device, and the controller transmits the obtained polishing pad thickness to the clamping device, and The clamping device drives the clamping base to move down the same distance according to the thickness.
  • the thickness detection device is a laser sensor
  • the laser sensor can emit laser light to the surface of the wafer and receive the laser light reflected from the surface of the wafer to obtain the distance between the thickness detection device and the surface of the wafer.
  • the polishing device includes a supporting device and a clamping device.
  • the clamping device can closely contact the wafer with the polishing pad, so that the polishing pad can polish the wafer.
  • the polishing force can be controlled by the counterweight to prevent the wafer from being worn out or excessively worn by the excessive wear force, and reduce the damage to the wafer, thereby improving the quality of the wafer; when the waxing process is performed, due to the clamping base A buffer pad is provided on the wafer so that the wafer and the clamping base do not directly contact, and the relative movement of the wafer and the clamping base is prevented from scratching the non-polished surface of the wafer when the wafer and the clamping base are separated.
  • FIG. 1 is a schematic structural diagram of an embodiment of a wafer polishing apparatus provided by the present application
  • FIG. 2 is a schematic diagram of the polishing pad in the embodiment shown in FIG. 1;
  • FIG. 3 is another schematic diagram of the polishing pad in the embodiment shown in FIG. 1;
  • FIG. 4 is a schematic structural diagram of another embodiment of a wafer polishing apparatus provided by the present application.
  • FIG. 5 is a schematic structural diagram of another embodiment of a wafer polishing apparatus provided by the present application.
  • FIG. 6 is a schematic structural diagram of still another embodiment of the wafer polishing apparatus provided by the present application.
  • the present application provides a wafer polishing device, which includes a supporting device and a clamping device;
  • the supporting device includes a supporting base and a polishing pad arranged on the supporting base;
  • the clamping device includes a counterweight, a clamping base and a buffer pad.
  • the counterweight is arranged on a side of the clamping base, and the buffer pad is arranged on a side of the clamping base away from the counterweight;
  • the clamping device is used to contact the wafer with the polishing pad
  • the counterweight is used to adjust the clamping force of the clamping device
  • the buffer pad is bonded to the non-polished surface of the wafer.
  • FIG. 1 is a schematic structural diagram of an embodiment of a wafer polishing apparatus provided by the present application.
  • the wafer polishing apparatus 10 includes a supporting device 11 and a clamping device 12.
  • the supporting device 11 includes a supporting base 111 and a polishing pad 112 disposed on the supporting base 111.
  • the clamping device 12 includes a clamping base 121 and a counterweight 122 disposed on the clamping base 121.
  • the clamping device 12 It is used to clamp the wafer on the polishing pad 112 during the polishing process.
  • the clamping device 12 also includes a cushion 123 arranged on the opposite side of the clamping base 121 and the counterweight.
  • the cushion 123 is arranged on the side of the clamping base 121 away from the counterweight 122, and the cushion 123 is used to directly In contact with the wafer, the clamping is realized during the polishing process, and a certain clamping force is generated, which facilitates the completion of the polishing process.
  • the buffer pad 123 can also be used to protect the non-polished surface of the wafer during waxing, improve the surface quality of the non-polished surface of the wafer, and reduce surface scratches.
  • the buffer pad 123 is attached to the clamping base 121, and then the clamping base 121 is placed on the hot plate for heating, until the temperature of the clamping base 121 reaches After the temperature is preset, wax is applied to the upper surface of the buffer pad 123. After the wax is melted, the wafer can be placed in the melted wax liquid, and then cooled, so that the wax solidifies to bond the wafer to the clamp. On the cushion 123 of the device 12.
  • the wafer polishing device 10 shown in FIG. 1 is provided with a polishing pad 112 on the support base 111.
  • the polishing pad 112 can polish the wafer, and can be dropped on the polishing pad 112 during polishing.
  • the polishing liquid is added, and then polishing pressure is applied to the clamping base 121 through the counterweight 122, and the rotating platform drives the polishing pad 112 to rotate, thereby polishing the polishing surface of the wafer.
  • the polishing pad 112 can rub the surface of the wafer, and the clamping force of the clamping device 12 can be controlled by the counterweight 122, which can be used for rapid and large-scale polishing.
  • the clamping device 12 by increasing the weight of the counterweight 122, the clamping device 12 generates a larger clamping force.
  • the large clamping force can increase the gap between the wafer and the polishing pad 112.
  • Friction force accelerates the polishing speed; but in processes that require a small amount of polishing, by reducing the weight of the counterweight 122, it can prevent the wafer from being worn out or excessively worn by the excessive wear force, reducing the damage to the wafer, and improving the crystal The quality of the circle.
  • the waxing process can be performed, and the clamping device 12 can be turned over so that the polishing surface of the wafer faces upwards.
  • the wafer and the clamping device 12 are placed on the hot plate for heating.
  • the wax liquid accelerates the melting of the wax, and uses the principle of partial boiling to separate the wafer from the buffer pad 123. After the wax is completely melted, use forceps to push the wafer down from the clamping device to realize the wafer and the buffer pad. The separation of 123.
  • the buffer pad 123 is provided on the clamping base 121, so that the wafer and the clamping base 121 are not in direct contact, and the relative movement of the wafer and the clamping base 121 is avoided when the wafer is separated from the clamping base 121.
  • the round non-polished surface causes scratches, improves the surface quality of the wafer, and improves the quality of the wafer.
  • the buffer pad 123 is a high-temperature tape
  • the non-polished surface of the wafer is the front side of the wafer.
  • a layer of high-temperature tape is pasted on the clamping base 121.
  • the high-temperature tape is thin and Strong viscosity; then place the wax on the hot plate and heat to 100°C, and then apply the wax to the surface of the high temperature tape. After the wax is completely melted, place the wafer on the wax liquid with the front side of the wafer facing down; then wait for the entire system to cool
  • the back wafer and the buffer pad 123 can be bonded together for subsequent grinding or thinning and polishing operations.
  • the high temperature tape can be polyimide. Because polyimide has a high melting point and is insoluble in most organic solvents, it has outstanding creep resistance and dimensional stability. Because the waxing is performed on a hot plate at 100°C Work, and need to add organic solvents (the wax liquid below) to help wax. This process also needs to ensure that the high temperature tape will not peel off due to thermal deformation, so polyimide film is selected as the high temperature tape.
  • the cushion 123 is photoresist
  • the clamping device 12 is fixed by a vacuum suction table
  • the photoresist is dripped on the clamping base 121 by a coater
  • the waxing method and the use of high temperature The method of waxing the tape is similar, and will not be repeated here; the subsequent wax removal cleaning process can use a stripping liquid to clean the clamping device 12, which can also effectively reduce the scratches on the front side of the wafer.
  • FIG. 2 is a schematic diagram of the polishing pad 112 in this embodiment.
  • the polishing pad 112 is provided with at least one groove or hole 1112. As shown in FIG. 2, the grooves or holes 1112 are uniformly or non-uniformly distributed in the polishing pad.
  • the shape of the groove or hole 1112 includes a triangle, a rectangle, a circle, or a fan shape.
  • the groove or hole 1112 is used to store the polishing liquid during the wafer polishing process to increase the polishing rate;
  • a certain amount of air remains in the hole during the polishing process, so that the wafer and the polishing pad 112 will not be tightly bonded due to the pressure difference, thereby reducing the process difficulty of lowering the wafer.
  • adding polishing fluid between the wafer and the polishing pad 112 is an indispensable process flow. Since the polishing fluid can further etch the wafer surface, adding the polishing fluid can further increase the movement speed of the wafer surface. Rate, that is, to increase the polishing rate.
  • the conventional polishing pad 112 is composed of a whole piece of soft material.
  • the polishing principle is mainly completed by the friction between the surface of the wafer and the surface of the polishing pad 112, and the polishing rate is mainly achieved by increasing the clamp
  • the holding device 12 applies the pressing force on the surface of the wafer.
  • This application not only provides a counterweight 122 that can adjust the pressing force, but also designs a hole that can store the polishing liquid, which can further increase the polishing efficiency while ensuring Yield rate of wafer polishing.
  • FIG. 3 is another schematic diagram of the polishing pad 112 in this embodiment.
  • the polishing pad 112 is provided with a plurality of concentric annular grooves 1112, wherein the radial distance between the annular grooves 1112 can be Equal or unequal, the width of each annular groove 1112 in the radial direction may be equal or unequal.
  • the function of the annular groove 1112 is the same as that of the groove or hole on the polishing pad 112 in FIG. 2, which will not be repeated here. .
  • polishing pad 112 with the microstructure on the surface of the annular groove 1112 is more conducive to the dispersion of the polishing liquid during the rapid rotation of the supporting device 11, that is, the distribution of the polishing liquid in the annular groove 1112 is more uniform, and the wafer surface is polished. The consistency will be better.
  • FIG. 4 is a schematic structural diagram of another embodiment of a wafer polishing apparatus provided by the present application.
  • the wafer polishing apparatus 10 includes a supporting device 11 and a clamping device 12.
  • the supporting device 11 includes a supporting base 111 and a polishing pad 112 disposed on the supporting base 111.
  • the clamping device 12 includes a clamping base 121 and a counterweight 122 disposed on the clamping base 121.
  • the clamping device 12 It is used to clamp the wafer on the polishing pad 112 during the polishing process.
  • the wafer polishing device 10 further includes a water spray device 14 which is arranged above the polishing pad 112; the water spray device 14 can spray water on the polishing pad 112 after polishing is completed to maintain the polishing pad 112 Wet, prolong the service life of polishing pad 112.
  • this embodiment sprays water to the polishing pad 112 to moisturize the polishing pad 112 after the wafer polishing and lower wafer process are completed, so that the polishing pad 112 can be kept wet when the next polishing is started. State so that the surface of the polishing pad 112 is soft. In other words, the polishing process is always performed on the wet polishing pad 112. Therefore, the wafer polishing apparatus 10 of this embodiment can not only improve the effect of chemical mechanical polishing, but also can greatly extend the service life of the polishing pad 112.
  • FIG. 5 is a schematic structural diagram of another embodiment of a wafer polishing apparatus provided by the present application.
  • the wafer polishing apparatus 10 includes a supporting device 11 and a clamping device 12.
  • the supporting device 11 includes a supporting base 111 and a polishing pad 112 disposed on the supporting base 111.
  • the clamping device 12 includes a clamping base 121 and a counterweight 122 disposed on the clamping base 121.
  • the clamping device 12 It is used to clamp the wafer on the polishing pad 112 during the polishing process.
  • the wafer polishing apparatus 10 further includes a thickness detection device 15 located above the polishing pad 112.
  • the thickness detection device 15 is used to detect the thinning of the polishing pad 112.
  • the thickness detection device 15 is located above the polishing pad 112 and has a thickness The distance from the detection device 15 to the center of the polishing pad 112 is the same as the distance from the center of the clamping device 12 to the center of the polishing pad 112; thus, the thickness detection device 15 can measure the reduced thickness of the polishing pad 112 corresponding to the position of the clamping device 12.
  • the detection device 15 is connected to the controller, and transmits the measured thickness of the polishing pad 112 to the controller; and the controller is also connected to the clamping device 12 to transmit the obtained thickness of the polishing pad 12 to the clamping device 12.
  • the clamping device 12 drives the clamping base 121 to move down the same distance according to the thickness, so that the distance from the polishing pad 112 to the polished surface of the wafer is kept stable, and the polishing efficiency is improved.
  • the thickness detection device 15 is a laser sensor, and the laser sensor can emit laser light to the surface of the wafer and receive the laser light reflected from the wafer surface to obtain the distance between the thickness detection device 15 and the wafer surface; moreover, the resolution of the thickness detection device 15 It is between 20 ⁇ m and 30 ⁇ m, so that the thickness reduced by the polishing pad 112 during the polishing process can be accurately obtained.
  • FIG. 6 is a schematic structural diagram of another embodiment of a wafer polishing device provided by the present application.
  • the polishing device 10 at least includes a supporting device 11, a clamping device 12 and a voltage detecting device 13.
  • the polishing pad 112 is a piezoelectric polishing pad, that is, the polishing pad 112 exhibits different voltage distributions under different pressures.
  • the voltage detection device 13 is used to connect with the polishing pad 112 to dynamically detect the difference in the polishing pad 112.
  • the voltage distribution of the region that is, the pressure distribution corresponding to different regions, due to the difference in the surface roughness of the wafer, in the case that the same weight 122 is uniformly pressed, the clamping force of the different regions of the polishing pad 112 is different, which corresponds to the pressure
  • the pressure on the electric polishing pad is different.
  • the voltage detection device 13 can dynamically detect the voltage change corresponding to the surface of the piezoelectric polishing pad. For areas with large voltage differences in local areas (that is, the roughness difference is large), the Increase the weight of the counterweight 122 and increase the polishing strength.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

一种晶圆抛光装置（10），该晶圆抛光装置（10）包括支撑装置（11）和夹持装置（12）；支撑装置（11）包括支撑基座（111）以及设置于支撑基座（111）上的抛光垫（112）；夹持装置（12）包括配重块（122）、夹持基座（121）及缓冲垫（123），配重块（122）设置于夹持基座（121）的一面，缓冲垫（123）设置于夹持基座（121）远离配重块（122）的一面；其中，夹持装置（12）用于将晶圆与抛光垫（112）接触，配重块（122）用于调整夹持装置（12）的夹紧力，缓冲垫（123）与晶圆的非抛光面粘接。通过配重块（122）能够控制抛光的力度，降低对晶圆的伤害，提升产品的质量。

Description

一种晶圆抛光装置 技术领域
本申请涉及半导体技术领域，具体涉及一种晶圆抛光装置。
背景技术
晶圆作为半导体器件的基板材料，广泛的用于激光器和发光二极管的发光芯片，其中，在半导体激光器的制备中，需要将晶圆减薄到一定程度，以满足加工要求，但由于减薄后的晶圆表面凹凸高低不平，存在较大的表面应力，使其在后续的工艺中容易产生晶圆弯曲的情况，因此还需对减薄后的晶圆进行抛光工艺，现有的CMP(Chemical Mechanical Polishing，化学机械抛光)抛光工艺，类似于一般的抛光工艺，将晶圆与抛光板接触，通过相互之间的传动摩擦，配合专用抛洗浆液，进行抛光处理，但是由于抛光精度级别和半导体材料本身的特性，在实际操作中并不能实现较好的晶圆表面平整度。
实用新型内容
本申请主要解决的问题是提供一种晶圆抛光装置，能够通过配重块控制抛光的力度，降低对晶圆的的伤害，提升产品的质量。
为解决上述技术问题，本申请采用的技术方案是：
提供一种晶圆抛光装置，该晶圆抛光装置包括支撑装置和夹持装置；
支撑装置包括支撑基座以及设置于支撑基座上的抛光垫；
夹持装置包括配重块、夹持基座及缓冲垫，配重块设置于夹持基座的一面，缓冲垫设置于夹持基座远离配重块的一面；
其中，夹持装置用于将晶圆与抛光垫接触，配重块用于调整夹持装置的夹紧力，缓冲垫与晶圆的非抛光面粘接。
在一实施例中，缓冲垫包括高温胶带或光刻胶，高温胶带为聚酰亚 胺薄膜。
在一实施例中，抛光垫上设置有至少一个凹槽或孔洞，凹槽或孔洞均匀或非均匀分布于抛光垫上，凹槽或孔洞的形状包括三角形、矩形或圆形。
在一实施例中，抛光垫上设置有多个同心圆的环形凹槽，其中，环形凹槽之间的径向距离相等或不等。
在一实施例中，晶圆抛光装置还包括喷水装置，喷水装置设置于抛光垫上方，喷水装置用于在抛光工艺结束后对抛光垫进行喷水。
在一实施例中，抛光垫为压电型抛光垫，晶圆抛光装置还包括与压电型抛光垫连接的电压检测装置，电压检测装置用于对压电型抛光垫表面对应的挤压力进行检测，并根据挤压力的局部差异调整抛光垫不同区域对应的配重块的重量。
在一实施例中，晶圆抛光装置还包括位于抛光垫上方的厚度检测装置，厚度检测装置用于动态检测抛光垫的厚度。
在一实施例中，厚度检测装置到抛光垫中心的距离与夹持装置中心到抛光垫中心的距离大致相等。
在一实施例中，晶圆抛光装置还包括与厚度检测装置连接的控制器，其中，控制器还与夹持装置连接，控制器根据获得的抛光垫减薄的厚度传输给夹持装置，而夹持装置根据厚度带动夹持基座向下移动相同距离。
在一实施例中，厚度检测装置为激光传感器，激光传感器能够向晶圆表面发射激光，并接收晶圆表面反射的激光而获取厚度检测装置到晶圆表面的距离。
通过上述方案，本申请的有益效果是：该抛光装置包括支撑装置和夹持装置，夹持装置可将晶圆与抛光垫紧密接触，以使得抛光垫能够对晶圆进行抛光，在进行抛光时，可通过配重块控制抛光的力度，防止磨损力度过大将晶圆磨坏或过度磨损，降低对晶圆的伤害，从而改善晶圆的质量；在执行下蜡工艺时，由于夹持基座上设置有缓冲垫，使得晶圆与夹持基座不直接接触，避免晶圆与夹持基座分离时二者相对运动对晶圆非抛光面造成划伤。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。其中，：
图1是本申请提供的晶圆抛光装置一实施例的结构示意图；
图2是图1所示的实施例中抛光垫的示意图；
图3是图1所示的实施例中抛光垫的另一示意图；
图4是本申请提供的晶圆抛光装置另一实施例的结构示意图；
图5是本申请提供的晶圆抛光装置又一实施例的结构示意图；
图6是本申请提供的晶圆抛光装置再一实施例的结构示意图；
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性的劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请提供一种晶圆抛光装置，该晶圆抛光装置包括支撑装置和夹持装置；
支撑装置包括支撑基座以及设置于支撑基座上的抛光垫；
夹持装置包括配重块、夹持基座及缓冲垫，配重块设置于夹持基座的一面，缓冲垫设置于夹持基座远离配重块的一面；
其中，夹持装置用于将晶圆与抛光垫接触，配重块用于调整夹持装置的夹紧力，缓冲垫与晶圆的非抛光面粘接。
下面结合具体的实施例对本申请的晶圆抛光装置进行说明。
请参阅图1，图1是本申请提供的晶圆抛光装置一实施例的结构示意图，晶圆抛光装置10包括：支撑装置11和夹持装置12。
支撑装置11包括支撑基座111以及设置于支撑基座111上的抛光垫 112，夹持装置12包括夹持基座121以及设置于夹持基座121上的配重块122，夹持装置12用于在抛光过程中，将晶圆夹紧在抛光垫112上。
夹持装置12还包括设置于夹持基座121与配重块相对一侧的缓冲垫123，缓冲垫123设置在夹持基座121远离配重块122的一侧，缓冲垫123用于直接与晶圆接触，在抛光过程中实现夹紧，产生一定的夹紧力，便于抛光工序的完成。
另外，缓冲垫123还可用于在下蜡时对晶圆的非抛光面进行保护，提升晶圆的非抛光面表面品质，减少表面划伤。
下面对具体的抛光工艺流程进行说明，首先将缓冲垫123贴附在夹持基座121上，然后将夹持基座121放置在热盘上进行加热，待夹持基座121的温度达到预设温度后，将蜡涂覆在缓冲垫123的上表面，待蜡完成融化后，可在融化的蜡液中放置晶圆，然后进行冷却，使得蜡凝固以将晶圆粘合在夹持装置12的缓冲垫123上。
晶圆的抛光处理，如图1所示的晶圆抛光装置10，支撑基座111上设置有抛光垫112，抛光垫112可对晶圆进行抛光，在进行抛光时可在抛光垫112上滴加抛光液，然后通过配重块122施加抛光压力在夹持基座121上，旋转平台带动抛光垫112旋转，从而对晶圆的抛光面进行抛光。
具体的抛光过程中，由于晶圆与抛光垫112紧密接触，抛光垫112可对晶圆的表面进行摩擦，并可通过配重块122控制夹持装置12的夹紧力度，在需要快速大量抛光时，通过加大配重块122的重量，使得夹持装置12产生较大的夹紧力，在晶圆旋转抛光的过程中，大的夹紧力可增加晶圆与抛光垫112之间的摩擦力，加速抛光的速度；但在需要少量抛光的工艺中，通过减少配重块122的重量，可以防止磨损力度过大将晶圆磨坏或过度磨损，降低对晶圆的伤害，从而改善晶圆的质量。
在对晶圆抛光完毕后，可执行下蜡工艺，夹持装置12可进行翻转，使得晶圆的抛光面朝上，晶圆连同夹持装置12一起放在热盘上加热，同时可添加下蜡液使得蜡加速融化，并利用局部沸腾的原理使得晶圆和缓冲垫123分离，待蜡完全融化后，利用镊子施加作用力将晶圆从夹持 装置上推下来，实现晶圆与缓冲垫123的分离。
在执行下蜡工艺时，由于夹持基座121上设置有缓冲垫123，使得晶圆与夹持基座121不直接接触，避免晶圆与夹持基座121分离时二者相对运动对晶圆非抛光面造成划伤，提升晶圆的表面品质，改善晶圆的质量。
在一具体的实施例中，缓冲垫123为高温胶带，晶圆的非抛光面为晶圆的正面，先在夹持基座121上贴上一层高温胶带，该高温胶带的厚度较薄且粘度较强；然后放在热盘上加热至100℃，再将蜡涂在高温胶带的表面，待蜡完全融化后在蜡液上放置晶圆，晶圆的正面向下；然后待整个体系冷却后晶圆与缓冲垫123便可粘合在一起，以便进行接下来的研磨或减薄抛光作业。
高温胶带可以为聚酰亚胺，由于聚酰亚胺熔点很高，并且不溶于大多数有机溶剂，具有突出的抗蠕变性和尺寸稳定性，由于下蜡是在100℃的热盘上进行作业的，并且需要滴加有机溶剂(如下蜡液)帮助下蜡，这个过程还要保证高温胶带不会因受热变形而剥落，因而选用聚酰亚胺薄膜作为高温胶带。
在另一具体的实施例中，缓冲垫123为光刻胶，利用真空吸附台固定夹持装置12，利用涂布机在夹持基座121上滴加光刻胶，下蜡方法与利用高温胶带进行下蜡的方法类似，在此不再赘述；后续的去蜡清洗工艺可采用剥离液对夹持装置12进行清洗，该方式也可有效减少晶圆的正面划伤。
请参阅图2，图2是本实施例中抛光垫112的示意图，抛光垫112上设置有至少一个凹槽或孔洞1112，如图2所示，凹槽或孔洞1112均匀或非均匀分布于抛光垫112上，可以理解的是，凹槽或孔洞1112的形状包括三角形、矩形、圆形或扇形，其中，凹槽或孔洞1112的作用是在晶圆抛光过程中储存抛光液，提升抛光速率；另外由于抛光垫112的孔洞设计，在抛光过程中，孔洞中始终残留一定量的空气，使得晶圆和抛光垫112之间不会因压力差而紧密粘接，降低下晶圆的工艺难度。具体来说，抛光过程中，晶圆与抛光垫112之间添加抛光液是必不可少的工 艺流程，由于抛光液可进一步蚀刻晶圆表面，因此添加抛光液可进一步增加晶圆表面的移速速率，即提升抛光速率，常规的抛光垫112为一整片的软性材料组成，其抛光的原理主要是通过晶圆表面与抛光垫112表面之间的摩擦完成，其抛光速率主要通过增加夹持装置12施加于晶圆表面的挤压力，而本申请不仅设置可调整挤压力的配重块122，还通过设计可储存抛光液的孔洞，在进一步增加抛光效率的同时，还可保证晶圆抛光的良率。
请参阅图3，图3为本实施例中的抛光垫112的另一示意图，抛光垫112上设置有多个同心圆的环形凹槽1112，其中，环形凹槽1112之间的径向距离可以相等也可以不等，各环形凹槽1112沿径向的宽度可相等也可以不相等，环形凹槽1112的作用与图2中抛光垫112上的凹槽或孔洞的部分相同，此处不在赘述。需要补充的是，环形凹槽1112表面微结构的抛光垫112在支撑装置11快速旋转的过程中更利于抛光液的分散，即抛光液在环形凹槽1112中的分布更均匀，晶圆表面抛光的一致性会更好。
请参阅图4，图4是本申请提供的晶圆抛光装置另一实施例的结构示意图，晶圆抛光装置10包括：支撑装置11和夹持装置12。
支撑装置11包括支撑基座111以及设置于支撑基座111上的抛光垫112，夹持装置12包括夹持基座121以及设置于夹持基座121上的配重块122，夹持装置12用于在抛光过程中，将晶圆夹紧在抛光垫112上。
本实施例中，晶圆抛光装置10还包括喷水装置14，喷水装置14设置在抛光垫112上方；喷水装置14可在抛光结束后对抛光垫112进行喷水，保持抛光垫112的湿润，延长抛光垫112的使用寿命。具体来说，本实施例通过在晶圆抛光及下晶圆工艺完成后，向抛光垫112喷水以便对抛光垫112保湿，从而可以在开始进行下一次抛光时，使抛光垫112处于湿润的状态，这样抛光垫112的表面是柔软的。换言之，抛光工艺始终在湿润的抛光垫112上进行。因此，本实施例的晶圆抛光装置10不仅可以提高化学机械抛光的效果，而且可以大大地延长抛光垫112的使用寿命。
请参阅图5，图5是本申请提供的晶圆抛光装置又一实施例的结构示意图，晶圆抛光装置10包括：支撑装置11和夹持装置12。
支撑装置11包括支撑基座111以及设置于支撑基座111上的抛光垫112，夹持装置12包括夹持基座121以及设置于夹持基座121上的配重块122，夹持装置12用于在抛光过程中，将晶圆夹紧在抛光垫112上。
本实施例中，晶圆抛光装置10还包括位于抛光垫112上方的厚度检测装置15，厚度检测装置15用于检测抛光垫112减薄的厚度，厚度检测装置15位于抛光垫112上方，且厚度检测装置15到抛光垫112中心的距离与夹持装置12中心到抛光垫112中心的距离一致；从而厚度检测装置15能够测量夹持装置12所在位置对应的抛光垫112被减薄的厚度，厚度检测装置15与控制器连接，把测得的抛光垫112减薄的厚度传输给控制器；而控制器还与夹持装置12连接，把获得的抛光垫12减薄的厚度传输给夹持装置12，而夹持装置12根据厚度带动夹持基座121向下移动相同距离，从而使抛光垫112到晶圆被抛光表面的距离保持稳定，提升抛光效率。
进一步，厚度检测装置15为激光传感器，激光传感器能够向晶圆表面发射激光，并接收晶圆表面反射的激光而获取厚度检测装置15到晶圆表面的距离；而且，厚度检测装置15的分辨率为20微米～30微米，从而能够精确的获得抛光过程中抛光垫112所减薄的厚度。
请参阅图6，图6是本申请提供的晶圆抛光装置再一实施例的结构示意图，抛光装置10至少包括：支撑装置11、夹持装置12以及电压检测装置13。
本实施例中，抛光垫112为压电型抛光垫，即抛光垫112在不同的压力下呈现出不同的电压分布，电压检测装置13用于与抛光垫112连接，可动态检测抛光垫112不同区域的电压分布，即对应不同区域的压力分布，由于晶圆表面粗糙度的不同，在同一配重块122均匀挤压的情况下，导致抛光垫112不同区域的夹紧力不同，对应到压电型抛光垫上的压力是不同的，此时电压检测装置13可动态检测压电型抛光垫表面对应的电压变化，对于局部区域电压差异较大的区域(即粗糙度差异较 大)，可通过加大配重块122的重量，增加抛光力度。
以上仅为本申请的实施例，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (10)

  1. 一种晶圆抛光装置，其特征在于，包括支撑装置和夹持装置；
    所述支撑装置包括支撑基座以及设置于所述支撑基座上的抛光垫；
    所述夹持装置包括配重块、夹持基座及缓冲垫，所述配重块设置于所述夹持基座的一面，所述缓冲垫设置于所述夹持基座远离所述配重块的一面；
    其中，所述夹持装置用于将晶圆与所述抛光垫接触，所述配重块用于调整所述夹持装置的夹紧力，所述缓冲垫与所述晶圆的非抛光面粘接。
  2. 根据权利要求1所述的晶圆抛光装置，其特征在于，
    所述缓冲垫包括高温胶带或光刻胶，所述高温胶带为聚酰亚胺薄膜。
  3. 根据权利要求1所述的晶圆抛光装置，其特征在于，
    所述抛光垫上设置有至少一个凹槽或孔洞，所述凹槽或孔洞均匀或非均匀分布于所述抛光垫上，所述凹槽或孔洞的形状包括三角形、矩形或圆形。
  4. 根据权利要求1所述的晶圆抛光装置，其特征在于，
    所述抛光垫上设置有多个同心圆的环形凹槽，其中，所述环形凹槽之间的径向距离相等或不等。
  5. 根据权利要求1所述的晶圆抛光装置，其特征在于，
    所述晶圆抛光装置还包括喷水装置，所述喷水装置设置于所述抛光垫上方，所述喷水装置用于在抛光工艺结束后对所述抛光垫进行喷水。
  6. 根据权利要求1所述的晶圆抛光装置，其特征在于，
    所述抛光垫为压电型抛光垫，所述晶圆抛光装置还包括与所述压电型抛光垫连接的电压检测装置，所述电压检测装置用于对所述压电型抛光垫表面对应的挤压力进行检测，并根据挤压力的局部差异调整所述抛光垫不同区域对应的配重块的重量。
  7. 根据权利要求1所述的晶圆抛光装置，其特征在于，
    所述晶圆抛光装置还包括位于所述抛光垫上方的厚度检测装置，所述厚度检测装置用于动态检测所述抛光垫的厚度。
  8. 根据权利要求7所述的晶圆抛光装置，其特征在于，
    所述厚度检测装置到所述抛光垫中心的距离与所述夹持装置中心到所述抛光垫中心的距离大致相等。
  9. 根据权利要求7所述的晶圆抛光装置，其特征在于，
    所述晶圆抛光装置还包括与所述厚度检测装置连接的控制器，其中，所述控制器还与所述夹持装置连接，所述控制器根据获得的所述抛光垫减薄的厚度传输给所述夹持装置，而所述夹持装置根据所述厚度带动所述夹持基座向下移动相同距离。
  10. 根据权利要求7所述的晶圆抛光装置，其特征在于，
    所述厚度检测装置为激光传感器，所述激光传感器能够向所述晶圆表面发射激光，并接收所述晶圆表面反射的激光而获取所述厚度检测装置到所述晶圆表面的距离。
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US20120028545A1 (en) * 2010-03-12 2012-02-02 Duescher Wayne O Pivot-balanced floating platen lapping machine
CN102157413A (zh) * 2011-01-20 2011-08-17 大连理工大学 小尺寸晶片抛光摩擦力在线测量装置
US20130023186A1 (en) * 2011-07-19 2013-01-24 Yasuyuki Motoshima Method and apparatus for polishing a substrate
CN103624673A (zh) * 2012-08-21 2014-03-12 中芯国际集成电路制造(上海)有限公司 化学机械抛光装置及化学机械抛光的方法
CN104708529A (zh) * 2013-12-11 2015-06-17 台湾积体电路制造股份有限公司 抛光头,化学机械抛光系统和抛光衬底的方法
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CN108202436A (zh) * 2016-12-16 2018-06-26 罗门哈斯电子材料Cmp控股股份有限公司 用来制造具有整体窗口的化学机械平面化（cmp）抛光垫的方法
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CN211728760U (zh) * 2019-12-31 2020-10-23 深圳市中光工业技术研究院 一种晶圆抛光装置

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US11890715B2 (en) 2020-06-24 2024-02-06 Applied Materials, Inc. Polishing carrier head with piezoelectric pressure control
US12030156B2 (en) 2021-06-22 2024-07-09 Applied Materials, Inc. Polishing carrier head with piezoelectric pressure control

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