KR100900182B1 - 반도체 패키지 - Google Patents
반도체 패키지 Download PDFInfo
- Publication number
- KR100900182B1 KR100900182B1 KR1020070129543A KR20070129543A KR100900182B1 KR 100900182 B1 KR100900182 B1 KR 100900182B1 KR 1020070129543 A KR1020070129543 A KR 1020070129543A KR 20070129543 A KR20070129543 A KR 20070129543A KR 100900182 B1 KR100900182 B1 KR 100900182B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- hole
- circuit pattern
- conductive circuit
- semiconductor chip
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (2)
- 수지층을 베이스층으로 하고, 그 상면에 전도성 회로패턴이 소정의 회로 배열로 식각 형성된 기판과;상기 기판의 수지층 저면으로부터 상기 전도성 회로패턴쪽으로 관통 형성된 관통구와;상기 기판상의 칩 부착 영역에 부착된 반도체 칩과;상기 반도체 칩의 본딩패드와, 상기 기판의 상면에 노출된 전도성 회로패턴간에 연결된 와이어와;상기 반도체 칩과, 와이어를 보호하기 위하여 기판상에 구획된 몰딩영역에 몰딩된 몰딩 컴파운드 수지와;상기 기판의 저면에 접착수단에 의하여 부착되되, 상기 관통구와 일치하는 다수의 결합구를 갖는 비전도성 지지체와;상기 비전도성 지지체의 결합구에 삽입되는 동시에 상기 관통구를 통해 노출된 전도성 회로패턴에 그 상단부가 통전 가능하게 융착되는 솔더볼;로 구성된 것을 특징으로 하는 반도체 패키지.
- 수지층을 베이스층으로 하고, 그 상면에 전도성 회로패턴이 소정의 회로 배열로 식각 형성된 기판과;상기 기판의 수지층 저면으로부터 상기 전도성 회로패턴쪽으로 관통 형성된 관통구와;상기 기판상의 칩 부착 영역에 부착된 반도체 칩과;상기 반도체 칩의 본딩패드와, 상기 기판의 상면에 노출된 전도성 회로패턴간을 연결하는 플립 칩과;상기 반도체 칩과, 플립 칩을 보호하기 위하여 기판상에 구획된 몰딩영역에 몰딩된 제1몰딩 컴파운드 수지;상기 기판의 저면에 대하여 몰딩하되, 상기 기판의 관통구를 제외한 영역에 몰딩되어, 관통구와 일치하는 결합구를 형성하는 제2몰딩 컴파운드 수지와;상기 제2몰딩 컴파운드 수지의 결합구에 삽입되는 동시에 상기 관통구를 통하여 노출된 전도성 회로패턴에 그 상단부가 통전 가능하게 융착되는 솔더볼;로 구성된 것을 특징으로 하는 반도체 패키지.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070129543A KR100900182B1 (ko) | 2007-12-13 | 2007-12-13 | 반도체 패키지 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070129543A KR100900182B1 (ko) | 2007-12-13 | 2007-12-13 | 반도체 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100900182B1 true KR100900182B1 (ko) | 2009-06-02 |
Family
ID=40982090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070129543A KR100900182B1 (ko) | 2007-12-13 | 2007-12-13 | 반도체 패키지 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100900182B1 (ko) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0936537A (ja) * | 1995-07-14 | 1997-02-07 | Matsushita Electric Ind Co Ltd | 電子部品の半田付け方法、半田付け状態の検査方法及び半田付けの補修方法 |
JPH10340929A (ja) | 1997-04-10 | 1998-12-22 | Hitachi Aic Inc | 電子部品搭載用配線基板 |
JP2000022031A (ja) | 1998-06-30 | 2000-01-21 | Rohm Co Ltd | 導電性ボールの実装方法 |
JP2002033355A (ja) | 2000-07-14 | 2002-01-31 | Mitsui Mining & Smelting Co Ltd | 電子部品実装用フィルムキャリアテープ |
-
2007
- 2007-12-13 KR KR1020070129543A patent/KR100900182B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0936537A (ja) * | 1995-07-14 | 1997-02-07 | Matsushita Electric Ind Co Ltd | 電子部品の半田付け方法、半田付け状態の検査方法及び半田付けの補修方法 |
JPH10340929A (ja) | 1997-04-10 | 1998-12-22 | Hitachi Aic Inc | 電子部品搭載用配線基板 |
JP2000022031A (ja) | 1998-06-30 | 2000-01-21 | Rohm Co Ltd | 導電性ボールの実装方法 |
JP2002033355A (ja) | 2000-07-14 | 2002-01-31 | Mitsui Mining & Smelting Co Ltd | 電子部品実装用フィルムキャリアテープ |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7777351B1 (en) | Thin stacked interposer package | |
JP5661225B2 (ja) | 半導体デバイスのパッケージング方法 | |
US8294253B2 (en) | Semiconductor device, electronic device and method of manufacturing semiconductor device, having electronic component, sealing resin and multilayer wiring structure | |
JP2009267163A (ja) | 配線基板、半導体装置、ならびに半導体装置の製造方法 | |
JP2009528707A (ja) | 多層パッケージ構造物及びその製造方法 | |
US11508673B2 (en) | Semiconductor packaging substrate, fabrication method and packaging process thereof | |
KR100251868B1 (ko) | 가요성 회로 기판을 이용한 칩 스케일 반도체 패키지 및 그 제조 방법 | |
KR100900182B1 (ko) | 반도체 패키지 | |
KR100199286B1 (ko) | 홈이 형성된 인쇄 회로 기판을 갖는 칩 스케일 패키지 | |
KR20110017153A (ko) | 볼 그리드 어레이 패키지 기판 및 그 제조방법 | |
KR101046251B1 (ko) | 적층형 반도체 패키지 | |
US20110101510A1 (en) | Board on chip package substrate and manufacturing method thereof | |
KR20050006547A (ko) | 반도체 패키지 제조용 회로기판 및 이를 이용한 반도체패키지 | |
US20070105270A1 (en) | Packaging methods | |
KR100565766B1 (ko) | 반도체 칩 패키지 및 그 제조방법 | |
KR100537835B1 (ko) | 반도체 패키지 제조방법 | |
KR101966317B1 (ko) | 인쇄회로기판의 제조방법 | |
KR101168413B1 (ko) | 리드 프레임 및 그 제조 방법 | |
KR101257457B1 (ko) | 집적회로 칩이 내장된 인쇄회로기판의 제조 방법 | |
JP2002151627A (ja) | 半導体装置、その製造方法および実装方法 | |
JP2010067623A (ja) | チップ内蔵基板及びその製造方法 | |
KR20020028473A (ko) | 적층 패키지 | |
KR20070019359A (ko) | 밀봉 수지 주입용 개구부를 구비하는 양면 실장형 기판 및그를 이용하는 멀티 칩 패키지의 제조방법 | |
KR100508261B1 (ko) | 반도체 패키지 및 그 제조방법 | |
JP2001024033A (ja) | 半導体素子実装用テープ、半導体装置及びそれらの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130502 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20140430 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20150430 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20160503 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20170511 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20190513 Year of fee payment: 11 |