KR100887439B1 - 전자 장치용 기판 및 그 처리 방법 - Google Patents

전자 장치용 기판 및 그 처리 방법 Download PDF

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Publication number
KR100887439B1
KR100887439B1 KR1020067023454A KR20067023454A KR100887439B1 KR 100887439 B1 KR100887439 B1 KR 100887439B1 KR 1020067023454 A KR1020067023454 A KR 1020067023454A KR 20067023454 A KR20067023454 A KR 20067023454A KR 100887439 B1 KR100887439 B1 KR 100887439B1
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South Korea
Prior art keywords
insulating film
substrate
gas
plasma
fluorine atom
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Expired - Fee Related
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KR1020067023454A
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English (en)
Korean (ko)
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KR20070011463A (ko
Inventor
야스오 고바야시
고헤이 가와무라
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도쿄엘렉트론가부시키가이샤
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Publication of KR20070011463A publication Critical patent/KR20070011463A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020067023454A 2004-05-11 2005-05-10 전자 장치용 기판 및 그 처리 방법 Expired - Fee Related KR100887439B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00141022 2004-05-11
JP2004141022 2004-05-11
PCT/JP2005/008506 WO2005109483A1 (ja) 2004-05-11 2005-05-10 電子装置用基板およびその処理方法

Publications (2)

Publication Number Publication Date
KR20070011463A KR20070011463A (ko) 2007-01-24
KR100887439B1 true KR100887439B1 (ko) 2009-03-10

Family

ID=35320470

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067023454A Expired - Fee Related KR100887439B1 (ko) 2004-05-11 2005-05-10 전자 장치용 기판 및 그 처리 방법

Country Status (4)

Country Link
JP (1) JP4555143B2 (https=)
KR (1) KR100887439B1 (https=)
CN (1) CN100485884C (https=)
WO (1) WO2005109483A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193642B2 (en) * 2005-06-20 2012-06-05 Tohoku University Interlayer insulating film, interconnection structure, and methods of manufacturing the same
JP5119606B2 (ja) * 2006-03-31 2013-01-16 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP5194393B2 (ja) * 2006-06-23 2013-05-08 東京エレクトロン株式会社 半導体装置の製造方法
US8318614B2 (en) 2007-03-26 2012-11-27 Tokyo Electron Limited Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus
JP2008270706A (ja) * 2007-03-26 2008-11-06 Tokyo Electron Ltd 窒化珪素膜および不揮発性半導体メモリ装置
US8021975B2 (en) * 2007-07-24 2011-09-20 Tokyo Electron Limited Plasma processing method for forming a film and an electronic component manufactured by the method
US8197913B2 (en) * 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
JP2009088267A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜方法、成膜装置、記憶媒体及び半導体装置
TW201044462A (en) 2009-01-22 2010-12-16 Tokyo Electron Ltd A method for manufacturing semiconductor devices
JP5600885B2 (ja) * 2009-03-19 2014-10-08 凸版印刷株式会社 有機ｅｌ用乾燥装置
JP5304759B2 (ja) * 2010-09-15 2013-10-02 東京エレクトロン株式会社 成膜方法及び半導体装置
JP5700513B2 (ja) * 2010-10-08 2015-04-15 国立大学法人東北大学 半導体装置の製造方法および半導体装置
JP2012164922A (ja) * 2011-02-09 2012-08-30 Yuutekku:Kk 圧電体の製造方法、圧電体及び電子装置
JP5364765B2 (ja) * 2011-09-07 2013-12-11 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP6559087B2 (ja) * 2016-03-31 2019-08-14 東京エレクトロン株式会社 基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144677A (ja) * 1996-11-14 1998-05-29 Tokyo Electron Ltd 半導体装置及びその製造方法
JPH11154672A (ja) * 1997-11-20 1999-06-08 Tokyo Electron Ltd プラズマ処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469761B2 (ja) * 1997-10-30 2003-11-25 東京エレクトロン株式会社 半導体デバイスの製造方法
JP4355039B2 (ja) * 1998-05-07 2009-10-28 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
JP3921917B2 (ja) * 2000-03-31 2007-05-30 セイコーエプソン株式会社 微細構造体の製造方法
KR20070116696A (ko) * 2001-01-22 2007-12-10 동경 엘렉트론 주식회사 전자 디바이스 재료의 제조 방법 및 플라즈마 처리 방법
KR20020093577A (ko) * 2001-06-08 2002-12-16 수미도모 프리시젼 프로덕츠 캄파니 리미티드 기판 처리 장치
JP4413556B2 (ja) * 2003-08-15 2010-02-10 東京エレクトロン株式会社 成膜方法、半導体装置の製造方法
JP4194521B2 (ja) * 2004-04-07 2008-12-10 東京エレクトロン株式会社 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144677A (ja) * 1996-11-14 1998-05-29 Tokyo Electron Ltd 半導体装置及びその製造方法
JPH11154672A (ja) * 1997-11-20 1999-06-08 Tokyo Electron Ltd プラズマ処理方法

Also Published As

Publication number Publication date
JP4555143B2 (ja) 2010-09-29
CN1943021A (zh) 2007-04-04
JP2005354041A (ja) 2005-12-22
CN100485884C (zh) 2009-05-06
WO2005109483A1 (ja) 2005-11-17
KR20070011463A (ko) 2007-01-24

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