KR100886897B1 - 홀로그래픽 레티클을 사용하여 광학 시스템의 특성을 평가하는 시스템 및 방법 - Google Patents

홀로그래픽 레티클을 사용하여 광학 시스템의 특성을 평가하는 시스템 및 방법 Download PDF

Info

Publication number
KR100886897B1
KR100886897B1 KR1020027003556A KR20027003556A KR100886897B1 KR 100886897 B1 KR100886897 B1 KR 100886897B1 KR 1020027003556 A KR1020027003556 A KR 1020027003556A KR 20027003556 A KR20027003556 A KR 20027003556A KR 100886897 B1 KR100886897 B1 KR 100886897B1
Authority
KR
South Korea
Prior art keywords
delete delete
reticle
image
optical system
pattern
Prior art date
Application number
KR1020027003556A
Other languages
English (en)
Korean (ko)
Other versions
KR20020072531A (ko
Inventor
한센매튜이.
Original Assignee
에이에스엠엘 유에스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 유에스, 인크. filed Critical 에이에스엠엘 유에스, 인크.
Publication of KR20020072531A publication Critical patent/KR20020072531A/ko
Application granted granted Critical
Publication of KR100886897B1 publication Critical patent/KR100886897B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0065—Recording, reproducing or erasing by using optical interference patterns, e.g. holograms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Library & Information Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
KR1020027003556A 2000-07-19 2001-07-19 홀로그래픽 레티클을 사용하여 광학 시스템의 특성을 평가하는 시스템 및 방법 KR100886897B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21918700P 2000-07-19 2000-07-19
US60/219,187 2000-07-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020087020900A Division KR100956670B1 (ko) 2000-07-19 2001-07-19 홀로그래픽 레티클을 제조하는 방법

Publications (2)

Publication Number Publication Date
KR20020072531A KR20020072531A (ko) 2002-09-16
KR100886897B1 true KR100886897B1 (ko) 2009-03-05

Family

ID=22818235

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020087020900A KR100956670B1 (ko) 2000-07-19 2001-07-19 홀로그래픽 레티클을 제조하는 방법
KR1020027003556A KR100886897B1 (ko) 2000-07-19 2001-07-19 홀로그래픽 레티클을 사용하여 광학 시스템의 특성을 평가하는 시스템 및 방법

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020087020900A KR100956670B1 (ko) 2000-07-19 2001-07-19 홀로그래픽 레티클을 제조하는 방법

Country Status (5)

Country Link
EP (1) EP1301830A2 (de)
JP (1) JP4599029B2 (de)
KR (2) KR100956670B1 (de)
AU (1) AU2001278941A1 (de)
WO (1) WO2002006899A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10131534B4 (de) * 2001-06-29 2007-07-19 Infineon Technologies Ag Verfahren zum Herstellen einer Maske zum Belichten
US6885429B2 (en) * 2002-06-28 2005-04-26 Asml Holding N.V. System and method for automated focus measuring of a lithography tool
AT414285B (de) * 2004-09-28 2006-11-15 Femtolasers Produktions Gmbh Mehrfachreflexions-verzögerungsstrecke für einen laserstrahl sowie resonator bzw. kurzpuls-laservorrichtung mit einer solchen verzögerungsstrecke
US11815675B2 (en) 2019-08-09 2023-11-14 Asml Netherlands B.V. Metrology device and phase modulator apparatus therefor comprising a first moving grating and a first compensatory grating element
TWI767291B (zh) * 2019-08-09 2022-06-11 荷蘭商Ａｓｍｌ荷蘭公司 對準裝置及微影裝置
GB2598604B (en) 2020-09-04 2023-01-18 Envisics Ltd A holographic projector
US20230314185A1 (en) * 2022-03-31 2023-10-05 Apple Inc. Optical Sensor Module Including an Interferometric Sensor and Extended Depth of Focus Optics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829219A (en) * 1973-03-30 1974-08-13 Itek Corp Shearing interferometer
US5128530A (en) * 1991-05-28 1992-07-07 Hughes Aircraft Company Piston error estimation method for segmented aperture optical systems while observing arbitrary unknown extended scenes

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5597220A (en) * 1979-01-19 1980-07-24 Dainippon Printing Co Ltd Method of producing metal filter
JPS61190368A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 微細パタ−ンの形成方法
JP2922958B2 (ja) * 1990-02-13 1999-07-26 株式会社日立製作所 拡大投影露光方法及びその装置
JPH03263313A (ja) * 1990-03-13 1991-11-22 Mitsubishi Electric Corp 干渉露光装置
JPH05217856A (ja) * 1992-01-31 1993-08-27 Fujitsu Ltd 露光方法及び露光装置
JPH08286009A (ja) * 1995-04-13 1996-11-01 Sumitomo Electric Ind Ltd チャープ格子形成装置
US6618174B2 (en) * 1996-11-15 2003-09-09 Diffraction, Ltd In-line holographic mask for micromachining
JPH10270330A (ja) * 1997-03-27 1998-10-09 Hitachi Ltd パターン形成方法及び装置
JP4032501B2 (ja) * 1998-04-22 2008-01-16 株式会社ニコン 投影光学系の結像特性計測方法及び投影露光装置
JPH11354014A (ja) * 1998-06-08 1999-12-24 Ricoh Co Ltd 電界放射型電子源の作製方法
JP2000150347A (ja) * 1998-11-11 2000-05-30 Hitachi Ltd 半導体集積回路装置の製造方法
US6379868B1 (en) * 1999-04-01 2002-04-30 Agere Systems Guardian Corp. Lithographic process for device fabrication using dark-field illumination

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829219A (en) * 1973-03-30 1974-08-13 Itek Corp Shearing interferometer
US5128530A (en) * 1991-05-28 1992-07-07 Hughes Aircraft Company Piston error estimation method for segmented aperture optical systems while observing arbitrary unknown extended scenes

Also Published As

Publication number Publication date
KR20020072531A (ko) 2002-09-16
WO2002006899A2 (en) 2002-01-24
KR100956670B1 (ko) 2010-05-10
WO2002006899A3 (en) 2002-06-20
AU2001278941A1 (en) 2002-01-30
JP2004504634A (ja) 2004-02-12
JP4599029B2 (ja) 2010-12-15
EP1301830A2 (de) 2003-04-16
KR20080091263A (ko) 2008-10-09

Similar Documents

Publication Publication Date Title
US7804601B2 (en) Methods for making holographic reticles for characterizing optical systems
JP4781414B2 (ja) 光学系の特徴を測定する方法及び装置
JP5554563B2 (ja) 次数選択されたオーバレイ測定
US6940585B2 (en) Evaluation mask, focus measuring method and aberration measuring method
JP4222926B2 (ja) デバイス検査
EP1709490B1 (de) Differentielle metrologie für kritische abmessung und überlagerung
US20060274325A1 (en) Method of qualifying a diffraction grating and method of manufacturing an optical element
US20220170735A1 (en) Diffractive optical element for a test interferometer
TW201921126A (zh) 用於量測在半導體基板上製造的特徵之參數的方法和設備
US7379170B2 (en) Apparatus and method for characterizing an image system in lithography projection tool
KR100886897B1 (ko) 홀로그래픽 레티클을 사용하여 광학 시스템의 특성을 평가하는 시스템 및 방법
TW202311715A (zh) 用於確定在待測量的入射光瞳內被照明光照明時光學系統的成像品質的方法
US9046791B2 (en) Apparatuses and methods for detecting wave front abberation of projection objective system in photolithography machine
KR20220065872A (ko) 계측 방법 및 리소그래피 장치
TWI837432B (zh) 對準方法與相關對準及微影裝置
KR100877321B1 (ko) 차분 임계 치수 및 오버레이 계측 장치 및 측정 방법
諏訪 et al. Study on Optical Amplifying Aberration Measurement for Semiconductor Optical Aligner

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
A107 Divisional application of patent
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120217

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee