KR100878512B1 - ＧａＮ 반도체 기판 제조 방법 - Google Patents

ＧａＮ 반도체 기판 제조 방법 Download PDF

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Publication number
KR100878512B1
KR100878512B1 KR20070046723A KR20070046723A KR100878512B1 KR 100878512 B1 KR100878512 B1 KR 100878512B1 KR 20070046723 A KR20070046723 A KR 20070046723A KR 20070046723 A KR20070046723 A KR 20070046723A KR 100878512 B1 KR100878512 B1 KR 100878512B1
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KR
South Korea
Prior art keywords
gan
thin film
substrate
film
metal
Prior art date
Application number
KR20070046723A
Other languages
English (en)
Korean (ko)
Other versions
KR20080100706A (ko
Inventor
권광우
김익현
Original Assignee
나이넥스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나이넥스 주식회사 filed Critical 나이넥스 주식회사
Priority to KR20070046723A priority Critical patent/KR100878512B1/ko
Priority to PCT/KR2008/002682 priority patent/WO2008140254A1/fr
Publication of KR20080100706A publication Critical patent/KR20080100706A/ko
Application granted granted Critical
Publication of KR100878512B1 publication Critical patent/KR100878512B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
KR20070046723A 2007-05-14 2007-05-14 ＧａＮ 반도체 기판 제조 방법 KR100878512B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR20070046723A KR100878512B1 (ko) 2007-05-14 2007-05-14 ＧａＮ 반도체 기판 제조 방법
PCT/KR2008/002682 WO2008140254A1 (fr) 2007-05-14 2008-05-14 Procédé de fabrication d'un substrat semi-conducteur ayant une couche de gan

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20070046723A KR100878512B1 (ko) 2007-05-14 2007-05-14 ＧａＮ 반도체 기판 제조 방법

Publications (2)

Publication Number Publication Date
KR20080100706A KR20080100706A (ko) 2008-11-19
KR100878512B1 true KR100878512B1 (ko) 2009-01-13

Family

ID=40002396

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20070046723A KR100878512B1 (ko) 2007-05-14 2007-05-14 ＧａＮ 반도체 기판 제조 방법

Country Status (2)

Country Link
KR (1) KR100878512B1 (fr)
WO (1) WO2008140254A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013157875A1 (fr) * 2012-04-18 2013-10-24 서울옵토디바이스주식회사 Procédé de fabrication de diode électroluminescente à haut rendement

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419367B (zh) 2010-12-02 2013-12-11 Epistar Corp 光電元件及其製造方法
KR101643213B1 (ko) * 2010-12-23 2016-08-10 에피스타 코포레이션 광전소자 및 그 제조방법
JP2012142473A (ja) * 2011-01-05 2012-07-26 Shogen Koden Kofun Yugenkoshi 光電素子及びその製造方法
KR101286771B1 (ko) * 2011-08-22 2013-07-16 고려대학교 산학협력단 유기 발광 소자 및 그 제조 방법
KR101448870B1 (ko) * 2012-11-28 2014-10-13 한국기계연구원 나노/마이크로 하이브리드 구조물 제조방법
CN103614769B (zh) * 2013-10-25 2016-03-16 中国电子科技集团公司第五十五研究所 一种基于原位刻蚀的氮化镓同质外延方法
US9171810B2 (en) * 2013-11-21 2015-10-27 Nxp B.V. Electronic device incorporating a randomized interconnection layer having a randomized conduction pattern
CN103647008B (zh) * 2013-12-31 2016-04-06 中国科学院半导体研究所 生长半极性GaN厚膜的方法
CN104078335B (zh) * 2014-06-30 2017-04-19 中国科学院上海微系统与信息技术研究所 一种用于HVPE生长GaN单晶的复合籽晶模板及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060081108A (ko) * 2005-01-07 2006-07-12 삼성코닝 주식회사 결정 성장 방법
KR20060081107A (ko) * 2005-01-07 2006-07-12 삼성코닝 주식회사 결정 성장 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4088111B2 (ja) * 2002-06-28 2008-05-21 日立電線株式会社 多孔質基板とその製造方法、ＧａＮ系半導体積層基板とその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060081108A (ko) * 2005-01-07 2006-07-12 삼성코닝 주식회사 결정 성장 방법
KR20060081107A (ko) * 2005-01-07 2006-07-12 삼성코닝 주식회사 결정 성장 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013157875A1 (fr) * 2012-04-18 2013-10-24 서울옵토디바이스주식회사 Procédé de fabrication de diode électroluminescente à haut rendement
KR101373398B1 (ko) * 2012-04-18 2014-04-29 서울바이오시스 주식회사 고효율 발광다이오드 제조방법

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Publication number Publication date
WO2008140254A1 (fr) 2008-11-20
KR20080100706A (ko) 2008-11-19

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