KR100875325B1 - 형광체와 그의 제조 방법, 및 그것을 이용한 발광디바이스와 그의 제조 방법 - Google Patents
형광체와 그의 제조 방법, 및 그것을 이용한 발광디바이스와 그의 제조 방법 Download PDFInfo
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- KR100875325B1 KR100875325B1 KR1020077012924A KR20077012924A KR100875325B1 KR 100875325 B1 KR100875325 B1 KR 100875325B1 KR 1020077012924 A KR1020077012924 A KR 1020077012924A KR 20077012924 A KR20077012924 A KR 20077012924A KR 100875325 B1 KR100875325 B1 KR 100875325B1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 135
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 230000005284 excitation Effects 0.000 claims abstract description 36
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 25
- -1 rare earth silicate Chemical class 0.000 claims description 16
- 150000004645 aluminates Chemical class 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 150000002910 rare earth metals Chemical class 0.000 claims description 10
- 229910020068 MgAl Inorganic materials 0.000 claims description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 5
- PHXNQAYVSHPINV-UHFFFAOYSA-N P.OB(O)O Chemical compound P.OB(O)O PHXNQAYVSHPINV-UHFFFAOYSA-N 0.000 claims description 5
- 229910019142 PO4 Inorganic materials 0.000 claims description 5
- 239000010452 phosphate Substances 0.000 claims description 5
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 5
- 239000003086 colorant Substances 0.000 claims description 3
- UAHZTKVCYHJBJQ-UHFFFAOYSA-N [P].S=O Chemical compound [P].S=O UAHZTKVCYHJBJQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims 8
- 229910052725 zinc Inorganic materials 0.000 claims 6
- 239000011701 zinc Substances 0.000 claims 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910052748 manganese Inorganic materials 0.000 claims 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 3
- 229910052684 Cerium Inorganic materials 0.000 claims 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims 2
- 229910004283 SiO 4 Inorganic materials 0.000 claims 2
- 229910052771 Terbium Inorganic materials 0.000 claims 2
- 239000000126 substance Substances 0.000 abstract description 44
- 230000014759 maintenance of location Effects 0.000 description 19
- 239000000203 mixture Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000004020 luminiscence type Methods 0.000 description 7
- 238000010304 firing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000012190 activator Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XSMMCTCMFDWXIX-UHFFFAOYSA-N zinc silicate Chemical class [Zn+2].[O-][Si]([O-])=O XSMMCTCMFDWXIX-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (16)
- 자외선 또는 가시광으로 여기되는 형광체에 있어서,상기 형광체를 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450nm, 및 500 nm의 각 파장으로 여기했을 때의 발광색을 각각 xy 좌표계로 나타냈을 때, x 좌표의 최대값과 최소값의 차 및 y 좌표의 최대값과 최소값의 차가 각각 0.020 이하인 것을 특징으로 하는 형광체.
- 제1항에 있어서, 상기 형광체는 자외선 여기형 형광체인 것을 특징으로 하는 형광체.
- 제1항에 있어서, 상기 형광체는 Eu-활성화 희토류 산화물 형광체, Eu-활성화 희토류 산황화물 형광체, Eu-활성화 희토류 붕산염 형광체, Eu-활성화 알루민산염 형광체, Eu-활성화 할로인산염 형광체, Mn-활성화 규산아연 형광체, Eu 및 Mn-활성화 알루민산염 형광체, Eu-활성화 알칼리토류 규산염 형광체, Tb-활성화 희토류 규산염 형광체, Tb-활성화 희토류 붕산염 형광체 및 Tb-활성화 희토류 인산염 형광체로부터 선택된 1종 이상을 포함하는 것을 특징으로 하는 형광체.
- 제1항에 있어서, 상기 형광체는 Y2O3:Eu, Y2O2S:Eu, La2O2S:Eu, (Y, Gd)BO3:Eu, (Ba, Sr)MgAl10O17:Eu, (Sr, Ca, Ba)10(PO4)6Cl2:Eu, Zn2SiO4:Mn, (Ba, Sr)MgAl10O17:Eu, Mn, 및 LaPO4:Ce, Tb로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 형광체.
- 형광체를 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450nm, 및 500 nm의 각 파장으로 여기하여, 각 파장에 의한 발광색을 측정하는 공정, 및상기 각 파장에 의한 발광색을 각각 xy 좌표계로 나타냈을 때, x 좌표의 최대값과 최소값의 차 및 y 좌표의 최대값과 최소값의 차가 각각 0.020 이하인 형광체를 선택하는 공정을 구비하는 것을 특징으로 하는 형광체의 제조 방법.
- 제5항에 있어서, 상기 형광체는 Eu-활성화 희토류 산화물 형광체, Eu-활성화 희토류 산황화물 형광체, Eu-활성화 희토류 붕산염 형광체, Eu-활성화 알루민산염 형광체, Eu-활성화 할로인산염 형광체, Mn-활성화 규산아연 형광체, Eu 및 Mn-활성화 알루민산염 형광체, Eu-활성화 알칼리토류 규산염 형광체, Tb-활성화 희토류 규산염 형광체, Tb-활성화 희토류 붕산염 형광체 및 Tb-활성화 희토류 인산염 형광체로부터 선택된 1종 이상을 포함하는 것을 특징으로 하는 제조 방법.
- 자외선 또는 가시광을 방출하는 여기원, 및상기 여기원에서 방출된 상기 자외선 또는 가시광으로 여기되어 가시광을 발광하는 발광부이며, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450nm, 및 500 nm의 각 파장으로 여기했을 때의 발광색을 각각 xy 좌표계로 나타냈을 때, x 좌표의 최대값과 최소값의 차 및 y 좌표의 최대값과 최소값의 차가 각각 0.020 이하인 형광체를 적어도 함유하는 발광부를 구비하는 것을 특징으로 하는 발광 디바이스.
- 제7항에 있어서, 상기 발광부는, 상기 x 좌표와 y 좌표의 최대값과 최소값의 차가 각각 0.020 이하인 형광체를, 발광부에 함유된 형광체의 전체 양 대비 70 질량% 이상의 범위로 함유하는 것을 특징으로 하는 발광 디바이스.
- 제7항에 있어서, 상기 형광체는 Eu-활성화 희토류 산화물 형광체, Eu-활성화 희토류 산황화물 형광체, Eu-활성화 희토류 붕산염 형광체, Eu-활성화 알루민산염 형광체, Eu-활성화 할로인산염 형광체, Mn-활성화 규산아연 형광체, Eu 및 Mn-활성화 알루민산염 형광체, Eu-활성화 알칼리토류 규산염 형광체, Tb-활성화 희토류 규산염 형광체, Tb-활성화 희토류 붕산염 형광체 및 Tb-활성화 희토류 인산염 형광체로부터 선택된 1종 이상을 포함하는 것을 특징으로 하는 발광 디바이스.
- 제7항에 있어서, 상기 형광체는 Y2O3:Eu, Y2O2S:Eu, La2O2S:Eu, (Y, Gd)BO3:Eu, (Ba, Sr)MgAl10O17:Eu, (Sr, Ca, Ba)10(PO4)6Cl2:Eu, Zn2SiO4:Mn, (Ba, Sr)MgAl10O17:Eu,Mn, 및 LaPO4:Ce,Tb로부터 선택되는 1종 이상을 포함하는 것을 특징으로 하는 발광 디바이스.
- 제7항에 있어서, 상기 발광 디바이스는 형광 램프, 냉음극 방전등, 플라즈마 디스플레이 및 LED 램프로부터 선택되는 1종인 것을 특징으로 하는 발광 디바이스.
- 제11항에 있어서, 상기 LED 램프는 백색 발광형 LED 램프인 것을 특징으로 하는 발광 디바이스.
- 형광체를 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450nm, 및 500 nm의 각 파장으로 여기하여, 각 파장에 의한 발광색을 측정하는 공정, 및상기 각 파장에 의한 발광색을 각각 xy 좌표계로 나타냈을 때, x 좌표의 최대값과 최소값의 차 및 y 좌표의 최대값과 최소값의 차가 각각 0.020 이하인 형광체를 선택하는 공정, 및적어도 상기 선택한 형광체를 이용하여, 여기원에서 방출된 자외선 또는 가시광으로 여기되어 가시광을 발광하는 발광부를 제조하는 공정을 구비하는 것을 특징으로 하는 발광 디바이스의 제조 방법.
- 제13항에 있어서, 상기 발광부는, 상기 x 좌표과 y 좌표의 최대값과 최소값의 차가 각각 0.020 이하인 형광체를, 발광부에 함유된 형광체의 전체 양 대비 70 질량% 이상의 범위로 함유하는 것을 특징으로 하는 발광 디바이스의 제조 방법.
- 제13항에 있어서, 상기 형광체는 Eu-활성화 희토류 산화물 형광체, Eu-활성화 희토류 산황화물 형광체, Eu-활성화 희토류 붕산염 형광체, Eu-활성화 알루민산염 형광체, Eu-활성화 할로인산염 형광체, Mn-활성화 규산아연 형광체, Eu 및 Mn-활성화 알루민산염 형광체, Eu-활성화 알칼리토류 규산염 형광체, Tb-활성화 희토류 규산염 형광체, Tb-활성화 희토류 붕산염 형광체 및 Tb-활성화 희토류 인산염 형광체로부터 선택된 1종 이상을 포함하는 것을 특징으로 하는 발광 디바이스의 제조 방법.
- 제13항에 있어서, 상기 발광 디바이스는 형광 램프, 냉음극 방전등, 플라즈마 디스플레이 및 LED 램프로부터 선택되는 1종인 것을 특징으로 하는 발광 디바이스의 제조 방법.
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