KR100870792B1 - 플라즈마 강화 화학 기상 증착(pecvd) 분야를 위한가열식 가스 박스 - Google Patents
플라즈마 강화 화학 기상 증착(pecvd) 분야를 위한가열식 가스 박스 Download PDFInfo
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- KR100870792B1 KR100870792B1 KR1020077003453A KR20077003453A KR100870792B1 KR 100870792 B1 KR100870792 B1 KR 100870792B1 KR 1020077003453 A KR1020077003453 A KR 1020077003453A KR 20077003453 A KR20077003453 A KR 20077003453A KR 100870792 B1 KR100870792 B1 KR 100870792B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C21/00—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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Abstract
Description
Claims (14)
- 처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버로서,내부에 형성된 처리 영역을 갖는 챔버 몸체와,상기 챔버 몸체 상에 배열되는 챔버 리드와,상기 챔버 리드에 연결되며, 중앙의 가스 통로 영역과 상기 중앙의 가스 통로 영역의 외측으로부터 상방향으로 연장하는 원통형 벽 및 상기 원통형 벽으로부터 외측으로 연장하는 환형 플랜지를 가지는 면판, 및 상기 면판의 플랜지 위에 동심으로 적층되고 상기 챔버 리드 상에 지지되는 플랜지를 가지는 기저판을 포함하는 가스 분배 조립체와,상기 면판과 기저판 사이의 상기 가스 분배 조립체 내에 형성되며, 상기 면판의 중앙의 가스 통로 영역을 통해 상기 처리 영역의 내측으로 가스를 지향시키는 가스 박스, 및상기 면판의 플랜지 위에 수직으로 상기 가스 분배 조립체의 기저판의 플랜지에 연결되어 상기 가스 박스와 면판을 가열하도록 배열되며, 상기 챔버 리드로부터 수직으로 이격되고 상기 면판과 동심인 가열식 환형 인서트를 포함하는,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 제 1 항에 있어서,상기 환형 인서트에는 가열 소자가 매설되어 있는,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 제 1 항에 있어서,상기 가스 분배 조립체의 상부면을 따라 위치되는 인서트의 내부에는 가열소자가 매설되어 있는,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 제 1 항에 있어서,상기 인서트는 실리콘 고무 인서트인,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 제 4 항에 있어서,상기 실리콘 고무 인서트는 와이어 코일을 더 포함하는,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 삭제
- 삭제
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- 제 1 항에 있어서,상기 인서트는 금속 링형 히터인,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 제 1 항에 있어서,상기 기저판은 상기 가스 박스에 유체 연결되는 가스 입구 통로를 더 포함하며, 상기 인서트는 상기 기저판과 접촉되는,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 제 11 항에 있어서,상기 인서트는 내부에 매설된 가열 소자를 가지는,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버로서,내부에 형성된 처리 영역을 갖는 챔버 몸체와,상기 챔버 몸체 상에 배열되는 챔버 리드, 및상기 챔버 리드에 연결되는 가열식 가스 분배 조립체를 포함하며,상기 가스 분배 조립체는,상기 챔버 리드의 상부에 배열되는 플랜지와 상기 처리 영역에 노출되는 중앙의 가스 통로 영역의 제 1 측면을 가지는 면판과,상기 처리 영역의 반대편에 있는 상기 면판의 제 2 측면 상에 형성되는 가스 박스, 및상기 면판의 플랜지의 상부에 배열되는 가열 소자를 더 포함하며,상기 중앙의 가스 통로 영역은 환형 벽에 의해 상기 챔버 리드의 상부에 배열되는 플랜지에 연결되며 상기 환형 벽의 내측 반경 방향에 있으며, 상기 플랜지는 상기 환형 벽의 외측 반경 방향에 있으며,상기 면판의 플랜지는 상기 가열 소자와 상기 챔버 리드 사이에 배열되며, 상기 가열 소자는 상기 면판을 가열하도록 배열되는,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
- 제 13 항에 있어서,상기 가열 소자는 상기 면판과 동심인 환형 링인,처리 영역에서 기판상에 화학 기상 증착을 수행하는 챔버.
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Application Number | Priority Date | Filing Date | Title |
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US10/910,269 | 2004-08-03 | ||
US10/910,269 US7628863B2 (en) | 2004-08-03 | 2004-08-03 | Heated gas box for PECVD applications |
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KR20070037507A KR20070037507A (ko) | 2007-04-04 |
KR100870792B1 true KR100870792B1 (ko) | 2008-11-27 |
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KR1020077003453A KR100870792B1 (ko) | 2004-08-03 | 2005-08-03 | 플라즈마 강화 화학 기상 증착(pecvd) 분야를 위한가열식 가스 박스 |
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US (1) | US7628863B2 (ko) |
EP (1) | EP1797216A2 (ko) |
JP (1) | JP4889640B2 (ko) |
KR (1) | KR100870792B1 (ko) |
CN (1) | CN1993495A (ko) |
SG (1) | SG155179A1 (ko) |
TW (1) | TWI318422B (ko) |
WO (1) | WO2006017596A2 (ko) |
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- 2005-08-03 CN CNA2005800262516A patent/CN1993495A/zh active Pending
- 2005-08-03 KR KR1020077003453A patent/KR100870792B1/ko active IP Right Grant
- 2005-08-03 SG SG200905172-3A patent/SG155179A1/en unknown
- 2005-08-03 JP JP2007524954A patent/JP4889640B2/ja active Active
- 2005-08-03 TW TW094126404A patent/TWI318422B/zh active
- 2005-08-03 EP EP05779323A patent/EP1797216A2/en not_active Withdrawn
- 2005-08-03 WO PCT/US2005/027612 patent/WO2006017596A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5595606A (en) * | 1995-04-20 | 1997-01-21 | Tokyo Electron Limited | Shower head and film forming apparatus using the same |
WO2001099171A1 (fr) | 2000-06-21 | 2001-12-27 | Tokyo Electron Limited | Dispositif de fourniture de gaz et dispositif de traitement |
EP1296364A1 (en) * | 2000-06-23 | 2003-03-26 | Tokyo Electron Limited | Method for forming thin film and apparatus for forming thin film |
Also Published As
Publication number | Publication date |
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WO2006017596A2 (en) | 2006-02-16 |
US7628863B2 (en) | 2009-12-08 |
US20070107660A9 (en) | 2007-05-17 |
WO2006017596A3 (en) | 2006-10-19 |
SG155179A1 (en) | 2009-09-30 |
JP4889640B2 (ja) | 2012-03-07 |
EP1797216A2 (en) | 2007-06-20 |
JP2008509560A (ja) | 2008-03-27 |
KR20070037507A (ko) | 2007-04-04 |
US20060027165A1 (en) | 2006-02-09 |
CN1993495A (zh) | 2007-07-04 |
TWI318422B (en) | 2009-12-11 |
TW200610039A (en) | 2006-03-16 |
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