KR100866059B1 - 대구경 표면 발광형 반도체 레이저 소자를 이용한 광정보처리 장치 - Google Patents

대구경 표면 발광형 반도체 레이저 소자를 이용한 광정보처리 장치 Download PDF

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KR100866059B1
KR100866059B1 KR1020060117740A KR20060117740A KR100866059B1 KR 100866059 B1 KR100866059 B1 KR 100866059B1 KR 1020060117740 A KR1020060117740 A KR 1020060117740A KR 20060117740 A KR20060117740 A KR 20060117740A KR 100866059 B1 KR100866059 B1 KR 100866059B1
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vcsel
light
light source
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emitting semiconductor
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KR20070066864A (ko
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노부아키 우에키
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후지제롯쿠스 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099—Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
KR1020060117740A 2005-12-22 2006-11-27 대구경 표면 발광형 반도체 레이저 소자를 이용한 광정보처리 장치 Active KR100866059B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005369086A JP2007173514A (ja) 2005-12-22 2005-12-22 大口径表面発光型半導体レーザ素子を用いた光情報処理装置
JPJP-P-2005-00369086 2005-12-22

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KR20070066864A KR20070066864A (ko) 2007-06-27
KR100866059B1 true KR100866059B1 (ko) 2008-10-31

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US (1) US20070147459A1 (https=)
EP (1) EP1801940A1 (https=)
JP (1) JP2007173514A (https=)
KR (1) KR100866059B1 (https=)
CN (1) CN1987674A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4548345B2 (ja) * 2006-01-12 2010-09-22 セイコーエプソン株式会社 面発光型半導体レーザ
KR101145219B1 (ko) 2007-09-17 2012-05-25 삼성전자주식회사 광출력장치 및 이를 채용한 광주사유니트
US7839913B2 (en) 2007-11-22 2010-11-23 Canon Kabushiki Kaisha Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser
JP5106487B2 (ja) * 2008-07-31 2012-12-26 キヤノン株式会社 面発光レーザの製造方法及び面発光レーザアレイの製造方法、該製造方法による面発光レーザアレイを備えている光学機器
JP2010192650A (ja) * 2009-02-18 2010-09-02 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光送信装置および光情報処理装置
JP5403248B2 (ja) * 2009-09-15 2014-01-29 株式会社リコー 光源装置、光走査装置及び画像形成装置
US8139277B2 (en) 2010-01-20 2012-03-20 Palo Alto Research Center. Incorporated Multiple-source multiple-beam polarized laser scanning system
JP5717989B2 (ja) * 2010-06-15 2015-05-13 古河電気工業株式会社 レーザ装置
US8976833B2 (en) * 2013-03-12 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Light coupling device and methods of forming same
US9041015B2 (en) 2013-03-12 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and methods of forming same
US10796627B2 (en) * 2018-07-27 2020-10-06 Shaoher Pan Integrated laser arrays based devices
US11843221B2 (en) * 2020-03-30 2023-12-12 Namuga, Co., Ltd. Light source module for emitting high density beam and method for controlling the same
US11302352B2 (en) * 2020-06-22 2022-04-12 Western Digital Technologies, Inc. VCSEL array for HAMR

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289967A (ja) 2001-03-28 2002-10-04 Rohm Co Ltd 面発光型半導体レーザおよびその製法
JP2002359432A (ja) * 2001-03-27 2002-12-13 Fuji Xerox Co Ltd 表面発光型半導体レーザ及び表面発光型半導体レーザの製造方法
KR20040041732A (ko) * 2002-11-11 2004-05-20 한국전자통신연구원 장파장 수직 공진 표면방출 레이저 및 그 제작방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1295580C (en) * 1989-06-14 1992-02-11 Bernard Bergeron Apparatus for handling cargo
US5483511A (en) * 1993-02-17 1996-01-09 Vixel Corporation Multiple beam optical memory system with solid-state lasers
JP3192552B2 (ja) * 1994-05-23 2001-07-30 松下電器産業株式会社 走査光学系およびそれを用いた画像形成装置
US5727014A (en) * 1995-10-31 1998-03-10 Hewlett-Packard Company Vertical-cavity surface-emitting laser generating light with a defined direction of polarization
JP3287319B2 (ja) * 1998-10-16 2002-06-04 富士ゼロックス株式会社 光学走査装置、走査レンズ、及び画像形成装置
JP2002026445A (ja) * 2000-07-11 2002-01-25 Ricoh Co Ltd 光源装置
TW529211B (en) * 2001-03-07 2003-04-21 Ying-Jay Yang Device structure and method for fabricating semiconductor lasers
JP2002353562A (ja) * 2001-05-23 2002-12-06 Canon Inc 面発光レーザ装置およびその製造方法
JP4537658B2 (ja) * 2002-02-22 2010-09-01 株式会社リコー 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
JP4363016B2 (ja) * 2002-04-26 2009-11-11 富士ゼロックス株式会社 半導体レーザー装置の取付構造
US7061945B2 (en) * 2003-05-13 2006-06-13 Finisar Corporation VCSEL mode-transforming phase filter with enhanced performance
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
US20050169336A1 (en) * 2004-02-04 2005-08-04 Fuji Xerox Co., Ltd. Vertical-cavity surface-emitting semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359432A (ja) * 2001-03-27 2002-12-13 Fuji Xerox Co Ltd 表面発光型半導体レーザ及び表面発光型半導体レーザの製造方法
JP2002289967A (ja) 2001-03-28 2002-10-04 Rohm Co Ltd 面発光型半導体レーザおよびその製法
KR20040041732A (ko) * 2002-11-11 2004-05-20 한국전자통신연구원 장파장 수직 공진 표면방출 레이저 및 그 제작방법

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CN1987674A (zh) 2007-06-27
EP1801940A1 (en) 2007-06-27
KR20070066864A (ko) 2007-06-27
US20070147459A1 (en) 2007-06-28

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