KR100865741B1 - Mems 소자의 플라스틱 패키징 및 그 구조의 제조 방법 - Google Patents
Mems 소자의 플라스틱 패키징 및 그 구조의 제조 방법 Download PDFInfo
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- KR100865741B1 KR100865741B1 KR1020070004223A KR20070004223A KR100865741B1 KR 100865741 B1 KR100865741 B1 KR 100865741B1 KR 1020070004223 A KR1020070004223 A KR 1020070004223A KR 20070004223 A KR20070004223 A KR 20070004223A KR 100865741 B1 KR100865741 B1 KR 100865741B1
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- mems device
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 31
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000002313 adhesive film Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 2
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 239000000428 dust Substances 0.000 claims 1
- 238000007731 hot pressing Methods 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 20
- 239000002253 acid Substances 0.000 description 17
- 238000005507 spraying Methods 0.000 description 9
- 239000007921 spray Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 6
- 239000012777 electrically insulating material Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000012855 volatile organic compound Substances 0.000 description 2
- -1 UV light intensity Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000010107 reaction injection moulding Methods 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00896—Temporary protection during separation into individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0154—Moulding a cap over the MEMS device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (24)
- 표면이 있는 캐리어(carrier)를 제공하는 단계와,작용면과 후면을 가지며, 상기 작용면은 감지영역과 복수의 본딩 패드를 포함하는 적어도 하나의 MEMS 시스템을 제공하는 단계와,상기 MEMS 소자의 작용면의 감지영역상에 희생층을 형성하기 위해 포토레지스트 공정을 수행하는 단계와,상기 본딩 패드가 상기 캐리어에 전기 연결되어 있는 상기 캐리어의 표면에 상기 MEMS 소자를 접합시키는 단계와,상기 희생층의 상부면이 노출되게 적어도 하나의 인캡슐런트(encapsulant)를 형성하는 단계와,상기 MEMS 장치의 감지영역을 노출시키기 위해 용매에 의해 상기 희생층을 용해하는 단계를 포함하는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 캐리어의 표면은 상기 MEMS 소자에 각각 전기 연결시키기 위한 복수의 패키징 영역을 더 구비하는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 캐리어는 인쇄회로기판(PCB), 리드 프레임(lead frame), 및 주문형 반 도체(ASIC)를 포함하는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 ASIC은 PCB 또는 리드 프레임에 접합되어 전기 연결되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 캐리어는 상기 인캡슐런트상에 패키지되는 ASIC을 더 포함하는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 인캡슐런트의 표면은 상기 희생층의 상부면과 동일한 높이에 있는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 인캡슐런트의 표면은 안내통로를 형성하기 위해 상기 인캡슐런트로부터 돌출한 안내관을 더 구비하는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 6 항에 있어서,상기 MEMS 소자는 상기 후면상에 케이브(cave)를 더 포함하고, 상기 케이블 을 덮기 위해 상기 후면에 있는 지지구조층에 연결되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 6 항에 있어서,상기 인캡슐런트의 표면은 상기 감지영역을 덮기 위해 방진분리필터(dustproof isolation filter)에 또한 접합되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 8 항에 있어서,상기 인캡슐런트의 표면은 상기 감지영역을 덮기 위해 방진분리필터에 또한 접합되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 9 항에 있어서,상기 인캡슐런트의 표면은 핫프레스(hot press), 접착 또는 초음파 진동처리에 의해 상기 방진분리필터에 접합되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 10 항에 있어서,상기 인캡슐런트의 표면은 핫프레스, 접착 또는 초음파 진동처리에 의해 상기 방진분리필터에 접합되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 9 항에 있어서,상기 방진분리필터는 플라스틱 위브(plastic weave), 종이 위브(paper weave), 섬유 또는 금속네트인 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 10 항에 있어서,상기 방진분리필터는 플라스틱 위브, 종이 위브, 섬유 또는 금속네트인 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 8 항에 있어서,상기 지지구조층의 재료는 유리, 실리콘 웨이퍼, 금속 또는 경화 플라스틱을 포함하는 강체 재료인 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 8 항에 있어서,상기 MEMS 소자는 웨이퍼 접합, 접착제 접합 또는 사전성형 필름 핫프레스 공정(pre-molding film hot press process)에 의해 상기 지지구조층에 접합되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 MEMS 소자는 Au-Sn 공정접합, 유리젤, 폴리머젤 또는 솔더링에 의해 상기 캐리어에 접합되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 희생층은 스핀 코팅 또는 스크린 프린팅에 의해 형성되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 희생층은 SU-8 포토레지스트인 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 MEMS 소자는 와이어 본딩공정, 플립칩(flip chip) 공정 또는 비등방성 필름접착제 공정(anisotropic adhesive film)에 의해 상기 캐리어에 전기연결되는 MEMS 소자의 플라스틱 패키징 제조방법.
- 제 1 항에 있어서,상기 인캡슐런트의 재료는 열적 고형화 액체 화합물(thermo-solidification liquid compound) 또는 성형화합물에 충진된 액적(liquid drop)인 MEMS 소자의 플라스틱 패키징 제조방법.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095109928 | 2006-03-22 | ||
TW095109928A TWI313501B (en) | 2006-03-22 | 2006-03-22 | A process for manufacture plastic package of mems devices and the structure for the same |
Publications (2)
Publication Number | Publication Date |
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KR20070095756A KR20070095756A (ko) | 2007-10-01 |
KR100865741B1 true KR100865741B1 (ko) | 2008-10-29 |
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KR1020070004223A KR100865741B1 (ko) | 2006-03-22 | 2007-01-15 | Mems 소자의 플라스틱 패키징 및 그 구조의 제조 방법 |
Country Status (3)
Country | Link |
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US (1) | US20070222008A1 (ko) |
KR (1) | KR100865741B1 (ko) |
TW (1) | TWI313501B (ko) |
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ITMI20072099A1 (it) * | 2007-10-30 | 2009-04-30 | St Microelectronics Srl | Metodo di fabbricazione di un dispositivo elettronico comprendente dispositivi mems incapsulati per stampaggio |
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CN111863639A (zh) * | 2020-07-09 | 2020-10-30 | 上海芯琰实业有限公司 | 一种芯片的封装方法 |
CN115642095B (zh) * | 2022-09-08 | 2024-03-29 | 武汉敏声新技术有限公司 | 一种射频模组封装结构及方法 |
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TW200642054A (en) | 2006-12-01 |
TWI313501B (en) | 2009-08-11 |
US20070222008A1 (en) | 2007-09-27 |
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