KR100863842B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR100863842B1
KR100863842B1 KR1020077004160A KR20077004160A KR100863842B1 KR 100863842 B1 KR100863842 B1 KR 100863842B1 KR 1020077004160 A KR1020077004160 A KR 1020077004160A KR 20077004160 A KR20077004160 A KR 20077004160A KR 100863842 B1 KR100863842 B1 KR 100863842B1
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KR
South Korea
Prior art keywords
microwave
top plate
wavelength
microwaves
plasma
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Expired - Fee Related
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KR1020077004160A
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English (en)
Korean (ko)
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KR20070044465A (ko
Inventor
카이즈홍 티안
기요타카 이시바시
쥰이치 기타가와
도시히사 노자와
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077004160A 2004-07-23 2005-07-21 플라즈마 처리 장치 Expired - Fee Related KR100863842B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00216277 2004-07-23
JP2004216277A JP4093212B2 (ja) 2004-07-23 2004-07-23 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20070044465A KR20070044465A (ko) 2007-04-27
KR100863842B1 true KR100863842B1 (ko) 2008-10-15

Family

ID=35785321

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077004160A Expired - Fee Related KR100863842B1 (ko) 2004-07-23 2005-07-21 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US8387560B2 (enExample)
JP (1) JP4093212B2 (enExample)
KR (1) KR100863842B1 (enExample)
CN (1) CN101002509B (enExample)
WO (1) WO2006009213A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064233B1 (ko) 2009-10-15 2011-09-14 한국과학기술원 측정 패턴 구조체, 보정 구조체, 기판 처리 장치 및 기판 처리 방법
KR20190071609A (ko) * 2017-12-14 2019-06-24 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마 처리 장치

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266085A (ja) * 2006-03-27 2007-10-11 Tokyo Electron Ltd プラズマ処理装置
JP4978985B2 (ja) * 2006-03-30 2012-07-18 東京エレクトロン株式会社 プラズマ処理方法
US8809753B2 (en) * 2006-08-28 2014-08-19 Youngtack Shim Electromagnetically-countered microwave heating systems and methods
JP5096047B2 (ja) * 2007-06-14 2012-12-12 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波透過板
JP5407388B2 (ja) * 2008-02-08 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置
CN101953236A (zh) * 2008-02-13 2011-01-19 东京毅力科创株式会社 微波等离子体处理装置的顶板、等离子体处理装置以及等离子体处理方法
RU2427110C1 (ru) * 2010-03-30 2011-08-20 Государственное Научное Учреждение "Институт Физики Имени Б.И. Степанова Национальной Академии Наук Беларуси" Способ подавления параметрической неустойчивости неоднородной плазмы и устройство для его реализации
JP5851899B2 (ja) * 2011-03-25 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5727281B2 (ja) * 2011-04-21 2015-06-03 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US9947516B2 (en) * 2014-06-03 2018-04-17 Tokyo Electron Limited Top dielectric quartz plate and slot antenna concept
KR102451370B1 (ko) * 2014-12-15 2022-10-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP6697292B2 (ja) * 2016-03-14 2020-05-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7090521B2 (ja) * 2018-09-26 2022-06-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7300957B2 (ja) 2019-10-08 2023-06-30 東京エレクトロン株式会社 プラズマ処理装置及び天壁
JP7531349B2 (ja) * 2020-08-28 2024-08-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR102567508B1 (ko) * 2020-12-21 2023-08-16 세메스 주식회사 기판 처리 장치 및 방법
KR102804139B1 (ko) * 2021-07-07 2025-05-09 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002355550A (ja) * 2001-03-28 2002-12-10 Tadahiro Omi プラズマ処理装置、プラズマ処理方法及び遅波板
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03191073A (ja) 1989-12-21 1991-08-21 Canon Inc マイクロ波プラズマ処理装置
JPH05343334A (ja) 1992-06-09 1993-12-24 Hitachi Ltd プラズマ発生装置
JP3233575B2 (ja) 1995-05-26 2001-11-26 東京エレクトロン株式会社 プラズマ処理装置
JP3496560B2 (ja) * 1999-03-12 2004-02-16 東京エレクトロン株式会社 プラズマ処理装置
KR100762754B1 (ko) * 1999-11-30 2007-10-09 동경 엘렉트론 주식회사 플라즈마 처리 장치
JP4441038B2 (ja) 2000-02-07 2010-03-31 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP4504511B2 (ja) * 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
JP4554065B2 (ja) * 2000-12-19 2010-09-29 東京エレクトロン株式会社 プラズマ処理装置
JP4974318B2 (ja) * 2001-08-17 2012-07-11 株式会社アルバック マイクロ波プラズマ処理装置および処理方法
JP3787297B2 (ja) 2001-10-31 2006-06-21 株式会社東芝 プラズマ処理装置
JP3723783B2 (ja) * 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
JP2004186303A (ja) * 2002-12-02 2004-07-02 Tokyo Electron Ltd プラズマ処理装置
JP2005032805A (ja) 2003-07-08 2005-02-03 Future Vision:Kk マイクロ波プラズマ処理方法、マイクロ波プラズマ処理装置及びそのプラズマヘッド

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002355550A (ja) * 2001-03-28 2002-12-10 Tadahiro Omi プラズマ処理装置、プラズマ処理方法及び遅波板
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064233B1 (ko) 2009-10-15 2011-09-14 한국과학기술원 측정 패턴 구조체, 보정 구조체, 기판 처리 장치 및 기판 처리 방법
KR20190071609A (ko) * 2017-12-14 2019-06-24 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마 처리 장치
KR102131539B1 (ko) 2017-12-14 2020-07-07 도쿄엘렉트론가부시키가이샤 마이크로파 플라즈마 처리 장치

Also Published As

Publication number Publication date
CN101002509A (zh) 2007-07-18
KR20070044465A (ko) 2007-04-27
JP4093212B2 (ja) 2008-06-04
JP2006040638A (ja) 2006-02-09
US8387560B2 (en) 2013-03-05
CN101002509B (zh) 2010-12-08
WO2006009213A1 (ja) 2006-01-26
US20080035058A1 (en) 2008-02-14

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