CN101002509B - 等离子处理单元 - Google Patents

等离子处理单元 Download PDF

Info

Publication number
CN101002509B
CN101002509B CN2005800249598A CN200580024959A CN101002509B CN 101002509 B CN101002509 B CN 101002509B CN 2005800249598 A CN2005800249598 A CN 2005800249598A CN 200580024959 A CN200580024959 A CN 200580024959A CN 101002509 B CN101002509 B CN 101002509B
Authority
CN
China
Prior art keywords
microwave
processing unit
plasma processing
upper plate
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2005800249598A
Other languages
English (en)
Chinese (zh)
Other versions
CN101002509A (zh
Inventor
田才忠
石桥清隆
北川淳一
野泽俊久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101002509A publication Critical patent/CN101002509A/zh
Application granted granted Critical
Publication of CN101002509B publication Critical patent/CN101002509B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN2005800249598A 2004-07-23 2005-07-21 等离子处理单元 Expired - Fee Related CN101002509B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP216277/2004 2004-07-23
JP2004216277A JP4093212B2 (ja) 2004-07-23 2004-07-23 プラズマ処理装置
PCT/JP2005/013404 WO2006009213A1 (ja) 2004-07-23 2005-07-21 プラズマ処理装置

Publications (2)

Publication Number Publication Date
CN101002509A CN101002509A (zh) 2007-07-18
CN101002509B true CN101002509B (zh) 2010-12-08

Family

ID=35785321

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800249598A Expired - Fee Related CN101002509B (zh) 2004-07-23 2005-07-21 等离子处理单元

Country Status (5)

Country Link
US (1) US8387560B2 (enExample)
JP (1) JP4093212B2 (enExample)
KR (1) KR100863842B1 (enExample)
CN (1) CN101002509B (enExample)
WO (1) WO2006009213A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266085A (ja) * 2006-03-27 2007-10-11 Tokyo Electron Ltd プラズマ処理装置
JP4978985B2 (ja) * 2006-03-30 2012-07-18 東京エレクトロン株式会社 プラズマ処理方法
US8809753B2 (en) * 2006-08-28 2014-08-19 Youngtack Shim Electromagnetically-countered microwave heating systems and methods
JP5096047B2 (ja) * 2007-06-14 2012-12-12 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波透過板
JP5407388B2 (ja) * 2008-02-08 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置
JP5243457B2 (ja) * 2008-02-13 2013-07-24 東京エレクトロン株式会社 マイクロ波プラズマ処理装置の天板、プラズマ処理装置およびプラズマ処理方法
KR101064233B1 (ko) 2009-10-15 2011-09-14 한국과학기술원 측정 패턴 구조체, 보정 구조체, 기판 처리 장치 및 기판 처리 방법
RU2427110C1 (ru) * 2010-03-30 2011-08-20 Государственное Научное Учреждение "Институт Физики Имени Б.И. Степанова Национальной Академии Наук Беларуси" Способ подавления параметрической неустойчивости неоднородной плазмы и устройство для его реализации
JP5851899B2 (ja) * 2011-03-25 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5727281B2 (ja) * 2011-04-21 2015-06-03 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US9947516B2 (en) 2014-06-03 2018-04-17 Tokyo Electron Limited Top dielectric quartz plate and slot antenna concept
JPWO2016098582A1 (ja) * 2014-12-15 2017-11-02 東京エレクトロン株式会社 プラズマ処理装置
JP6697292B2 (ja) * 2016-03-14 2020-05-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20190189398A1 (en) * 2017-12-14 2019-06-20 Tokyo Electron Limited Microwave plasma processing apparatus
JP7090521B2 (ja) * 2018-09-26 2022-06-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7300957B2 (ja) * 2019-10-08 2023-06-30 東京エレクトロン株式会社 プラズマ処理装置及び天壁
JP7531349B2 (ja) * 2020-08-28 2024-08-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR102567508B1 (ko) * 2020-12-21 2023-08-16 세메스 주식회사 기판 처리 장치 및 방법
KR102804139B1 (ko) * 2021-07-07 2025-05-09 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6325018B1 (en) * 1999-03-12 2001-12-04 Tokyo Electron Limited Flat antenna having openings provided with conductive materials accommodated therein and plasma processing apparatus using the flat antenna
CN1460288A (zh) * 2001-03-28 2003-12-03 大见忠弘 等离子体处理装置、等离子体处理方法和滞波板

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03191073A (ja) 1989-12-21 1991-08-21 Canon Inc マイクロ波プラズマ処理装置
JPH05343334A (ja) 1992-06-09 1993-12-24 Hitachi Ltd プラズマ発生装置
JP3233575B2 (ja) 1995-05-26 2001-11-26 東京エレクトロン株式会社 プラズマ処理装置
TW480594B (en) * 1999-11-30 2002-03-21 Tokyo Electron Ltd Plasma processing apparatus
JP4441038B2 (ja) * 2000-02-07 2010-03-31 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP4504511B2 (ja) * 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
JP4554065B2 (ja) * 2000-12-19 2010-09-29 東京エレクトロン株式会社 プラズマ処理装置
JP4974318B2 (ja) * 2001-08-17 2012-07-11 株式会社アルバック マイクロ波プラズマ処理装置および処理方法
JP3787297B2 (ja) 2001-10-31 2006-06-21 株式会社東芝 プラズマ処理装置
JP3723783B2 (ja) * 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
JP2004186303A (ja) * 2002-12-02 2004-07-02 Tokyo Electron Ltd プラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2005032805A (ja) * 2003-07-08 2005-02-03 Future Vision:Kk マイクロ波プラズマ処理方法、マイクロ波プラズマ処理装置及びそのプラズマヘッド

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6325018B1 (en) * 1999-03-12 2001-12-04 Tokyo Electron Limited Flat antenna having openings provided with conductive materials accommodated therein and plasma processing apparatus using the flat antenna
CN1460288A (zh) * 2001-03-28 2003-12-03 大见忠弘 等离子体处理装置、等离子体处理方法和滞波板

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2000-30897A 2000.01.28
JP特开2004-200307A 2004.07.15

Also Published As

Publication number Publication date
CN101002509A (zh) 2007-07-18
JP2006040638A (ja) 2006-02-09
KR100863842B1 (ko) 2008-10-15
WO2006009213A1 (ja) 2006-01-26
US8387560B2 (en) 2013-03-05
JP4093212B2 (ja) 2008-06-04
US20080035058A1 (en) 2008-02-14
KR20070044465A (ko) 2007-04-27

Similar Documents

Publication Publication Date Title
CN101002509B (zh) 等离子处理单元
JP5438205B2 (ja) プラズマ処理装置用の天板及びプラズマ処理装置
KR101008746B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
WO2010055862A1 (ja) プラズマエッチング方法及びプラズマエッチング装置
WO2011021539A1 (ja) プラズマ処理装置とプラズマ処理方法
JP2000260747A (ja) 平面アンテナ部材、これを用いたプラズマ処理装置及びプラズマ処理方法
KR102773476B1 (ko) 전자 빔 발생기, 이를 갖는 플라즈마 처리 장치 및 이를 이용한 플라즈마 처리 방법
US20080142159A1 (en) Plasma Processing Apparatus
JP5410882B2 (ja) プラズマエッチング処理装置とプラズマエッチング処理方法
JP2008235611A (ja) プラズマ処理装置及びプラズマ処理方法
KR101411171B1 (ko) 플라즈마 처리 장치
TWI383454B (zh) Microwave introduction device and plasma processing device
JP3889280B2 (ja) プラズマ処理装置
KR20080080414A (ko) 플라즈마 처리 장치
KR102758748B1 (ko) 샤워 헤드 어셈블리 및 이를 갖는 플라즈마 처리 장치
CN101849444B (zh) 平板天线部件以及具备其的等离子体处理装置
JP2008182102A (ja) 天板部材及びこれを用いたプラズマ処理装置
JP4747404B2 (ja) プラズマ処理装置
JP4709192B2 (ja) プラズマ処理装置
JP5728565B2 (ja) プラズマ処理装置及びこれに用いる遅波板
JP2009259863A (ja) ドライエッチング処理装置及びドライエッチング方法
TW202234512A (zh) 基板支持器、電漿處理系統及電漿蝕刻方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101208

Termination date: 20140721

EXPY Termination of patent right or utility model