JP4093212B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4093212B2
JP4093212B2 JP2004216277A JP2004216277A JP4093212B2 JP 4093212 B2 JP4093212 B2 JP 4093212B2 JP 2004216277 A JP2004216277 A JP 2004216277A JP 2004216277 A JP2004216277 A JP 2004216277A JP 4093212 B2 JP4093212 B2 JP 4093212B2
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JP
Japan
Prior art keywords
microwave
plasma processing
processing apparatus
top plate
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004216277A
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English (en)
Japanese (ja)
Other versions
JP2006040638A5 (enExample
JP2006040638A (ja
Inventor
才忠 田
清隆 石橋
淳一 北川
俊久 野沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004216277A priority Critical patent/JP4093212B2/ja
Priority to CN2005800249598A priority patent/CN101002509B/zh
Priority to KR1020077004160A priority patent/KR100863842B1/ko
Priority to PCT/JP2005/013404 priority patent/WO2006009213A1/ja
Priority to US11/632,779 priority patent/US8387560B2/en
Publication of JP2006040638A publication Critical patent/JP2006040638A/ja
Publication of JP2006040638A5 publication Critical patent/JP2006040638A5/ja
Application granted granted Critical
Publication of JP4093212B2 publication Critical patent/JP4093212B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2004216277A 2004-07-23 2004-07-23 プラズマ処理装置 Expired - Fee Related JP4093212B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004216277A JP4093212B2 (ja) 2004-07-23 2004-07-23 プラズマ処理装置
CN2005800249598A CN101002509B (zh) 2004-07-23 2005-07-21 等离子处理单元
KR1020077004160A KR100863842B1 (ko) 2004-07-23 2005-07-21 플라즈마 처리 장치
PCT/JP2005/013404 WO2006009213A1 (ja) 2004-07-23 2005-07-21 プラズマ処理装置
US11/632,779 US8387560B2 (en) 2004-07-23 2005-07-21 Plasma processing unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004216277A JP4093212B2 (ja) 2004-07-23 2004-07-23 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2006040638A JP2006040638A (ja) 2006-02-09
JP2006040638A5 JP2006040638A5 (enExample) 2006-10-05
JP4093212B2 true JP4093212B2 (ja) 2008-06-04

Family

ID=35785321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004216277A Expired - Fee Related JP4093212B2 (ja) 2004-07-23 2004-07-23 プラズマ処理装置

Country Status (5)

Country Link
US (1) US8387560B2 (enExample)
JP (1) JP4093212B2 (enExample)
KR (1) KR100863842B1 (enExample)
CN (1) CN101002509B (enExample)
WO (1) WO2006009213A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007266085A (ja) * 2006-03-27 2007-10-11 Tokyo Electron Ltd プラズマ処理装置
JP4978985B2 (ja) * 2006-03-30 2012-07-18 東京エレクトロン株式会社 プラズマ処理方法
US8809753B2 (en) * 2006-08-28 2014-08-19 Youngtack Shim Electromagnetically-countered microwave heating systems and methods
JP5096047B2 (ja) * 2007-06-14 2012-12-12 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波透過板
JP5407388B2 (ja) * 2008-02-08 2014-02-05 東京エレクトロン株式会社 プラズマ処理装置
JP5243457B2 (ja) * 2008-02-13 2013-07-24 東京エレクトロン株式会社 マイクロ波プラズマ処理装置の天板、プラズマ処理装置およびプラズマ処理方法
KR101064233B1 (ko) 2009-10-15 2011-09-14 한국과학기술원 측정 패턴 구조체, 보정 구조체, 기판 처리 장치 및 기판 처리 방법
RU2427110C1 (ru) * 2010-03-30 2011-08-20 Государственное Научное Учреждение "Институт Физики Имени Б.И. Степанова Национальной Академии Наук Беларуси" Способ подавления параметрической неустойчивости неоднородной плазмы и устройство для его реализации
JP5851899B2 (ja) * 2011-03-25 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5727281B2 (ja) * 2011-04-21 2015-06-03 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US9947516B2 (en) 2014-06-03 2018-04-17 Tokyo Electron Limited Top dielectric quartz plate and slot antenna concept
JPWO2016098582A1 (ja) * 2014-12-15 2017-11-02 東京エレクトロン株式会社 プラズマ処理装置
JP6697292B2 (ja) * 2016-03-14 2020-05-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20190189398A1 (en) * 2017-12-14 2019-06-20 Tokyo Electron Limited Microwave plasma processing apparatus
JP7090521B2 (ja) * 2018-09-26 2022-06-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7300957B2 (ja) * 2019-10-08 2023-06-30 東京エレクトロン株式会社 プラズマ処理装置及び天壁
JP7531349B2 (ja) * 2020-08-28 2024-08-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR102567508B1 (ko) * 2020-12-21 2023-08-16 세메스 주식회사 기판 처리 장치 및 방법
KR102804139B1 (ko) * 2021-07-07 2025-05-09 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03191073A (ja) 1989-12-21 1991-08-21 Canon Inc マイクロ波プラズマ処理装置
JPH05343334A (ja) 1992-06-09 1993-12-24 Hitachi Ltd プラズマ発生装置
JP3233575B2 (ja) 1995-05-26 2001-11-26 東京エレクトロン株式会社 プラズマ処理装置
JP3496560B2 (ja) 1999-03-12 2004-02-16 東京エレクトロン株式会社 プラズマ処理装置
TW480594B (en) * 1999-11-30 2002-03-21 Tokyo Electron Ltd Plasma processing apparatus
JP4441038B2 (ja) * 2000-02-07 2010-03-31 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP4504511B2 (ja) * 2000-05-26 2010-07-14 忠弘 大見 プラズマ処理装置
JP4554065B2 (ja) * 2000-12-19 2010-09-29 東京エレクトロン株式会社 プラズマ処理装置
JP4402860B2 (ja) * 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
JP4974318B2 (ja) * 2001-08-17 2012-07-11 株式会社アルバック マイクロ波プラズマ処理装置および処理方法
JP3787297B2 (ja) 2001-10-31 2006-06-21 株式会社東芝 プラズマ処理装置
JP3723783B2 (ja) * 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
JP2004186303A (ja) * 2002-12-02 2004-07-02 Tokyo Electron Ltd プラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP2005032805A (ja) * 2003-07-08 2005-02-03 Future Vision:Kk マイクロ波プラズマ処理方法、マイクロ波プラズマ処理装置及びそのプラズマヘッド

Also Published As

Publication number Publication date
CN101002509A (zh) 2007-07-18
JP2006040638A (ja) 2006-02-09
KR100863842B1 (ko) 2008-10-15
WO2006009213A1 (ja) 2006-01-26
CN101002509B (zh) 2010-12-08
US8387560B2 (en) 2013-03-05
US20080035058A1 (en) 2008-02-14
KR20070044465A (ko) 2007-04-27

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