KR100846337B1 - 노광방법 및 노광장치 - Google Patents
노광방법 및 노광장치 Download PDFInfo
- Publication number
- KR100846337B1 KR100846337B1 KR1020000057268A KR20000057268A KR100846337B1 KR 100846337 B1 KR100846337 B1 KR 100846337B1 KR 1020000057268 A KR1020000057268 A KR 1020000057268A KR 20000057268 A KR20000057268 A KR 20000057268A KR 100846337 B1 KR100846337 B1 KR 100846337B1
- Authority
- KR
- South Korea
- Prior art keywords
- optical system
- substrate
- projection
- exposure
- exposure light
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP99-282114 | 1999-10-01 | ||
JP28211499 | 1999-10-01 | ||
JP2000269288A JP4649717B2 (ja) | 1999-10-01 | 2000-09-05 | 露光方法及び露光装置、デバイス製造方法 |
JP2000-269288 | 2000-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010039943A KR20010039943A (ko) | 2001-05-15 |
KR100846337B1 true KR100846337B1 (ko) | 2008-07-15 |
Family
ID=26554475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000057268A KR100846337B1 (ko) | 1999-10-01 | 2000-09-29 | 노광방법 및 노광장치 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4649717B2 (ja) |
KR (1) | KR100846337B1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4362999B2 (ja) * | 2001-11-12 | 2009-11-11 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2003295459A (ja) * | 2002-04-02 | 2003-10-15 | Nikon Corp | 露光装置及び露光方法 |
JP2004335953A (ja) * | 2002-11-25 | 2004-11-25 | Nikon Corp | 露光装置及び露光方法 |
JP4496711B2 (ja) * | 2003-03-31 | 2010-07-07 | 株式会社ニコン | 露光装置及び露光方法 |
US20050088664A1 (en) * | 2003-10-27 | 2005-04-28 | Lars Stiblert | Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface |
JP4806581B2 (ja) * | 2005-03-28 | 2011-11-02 | 富士フイルム株式会社 | 光量調整方法、画像記録方法及び装置 |
CN102253477B (zh) * | 2006-03-20 | 2014-05-28 | 株式会社尼康 | 反射折射投影光学系统、扫描曝光装置、微元件的制造方法 |
US8013977B2 (en) * | 2006-07-17 | 2011-09-06 | Asml Netherlands B.V. | Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor |
JP5354803B2 (ja) | 2010-06-28 | 2013-11-27 | 株式会社ブイ・テクノロジー | 露光装置 |
US9488811B2 (en) * | 2013-08-20 | 2016-11-08 | Ultratech, Inc. | Wynne-Dyson optical system with variable magnification |
JP6661371B2 (ja) | 2015-12-25 | 2020-03-11 | キヤノン株式会社 | 評価方法、露光方法、および物品の製造方法 |
WO2018168993A1 (ja) * | 2017-03-17 | 2018-09-20 | 株式会社ニコン | 照明装置及び方法、露光装置及び方法、並びにデバイス製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100416327B1 (ko) * | 1993-11-11 | 2004-04-17 | 가부시키가이샤 니콘 | 주사형노광장치및노광방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0654751B2 (ja) * | 1987-10-27 | 1994-07-20 | キヤノン株式会社 | 焦点検出方法 |
JP2580668B2 (ja) * | 1988-01-21 | 1997-02-12 | 株式会社ニコン | 露光方法、露光条件測定方法及ぴパターン測定方法 |
JP3230094B2 (ja) * | 1991-09-02 | 2001-11-19 | 株式会社ニコン | 投影光学系の光学特性測定方法、光学特性測定装置、露光方法及びマスク |
JP3287017B2 (ja) * | 1992-07-10 | 2002-05-27 | 株式会社ニコン | 結像特性の測定方法 |
JP3152776B2 (ja) * | 1992-12-25 | 2001-04-03 | 宮崎沖電気株式会社 | ホトリソグラフィーの露光量算出方法 |
JP3376688B2 (ja) * | 1993-10-06 | 2003-02-10 | 株式会社ニコン | 露光装置、及び該装置を用いた露光方法 |
JP3339149B2 (ja) * | 1993-12-08 | 2002-10-28 | 株式会社ニコン | 走査型露光装置ならびに露光方法 |
JP3460129B2 (ja) * | 1994-08-16 | 2003-10-27 | 株式会社ニコン | 露光装置および露光方法 |
JP3550597B2 (ja) * | 1995-06-02 | 2004-08-04 | 株式会社ニコン | 露光装置 |
JP3791037B2 (ja) * | 1996-02-28 | 2006-06-28 | 株式会社ニコン | 露光装置 |
-
2000
- 2000-09-05 JP JP2000269288A patent/JP4649717B2/ja not_active Expired - Lifetime
- 2000-09-29 KR KR1020000057268A patent/KR100846337B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100416327B1 (ko) * | 1993-11-11 | 2004-04-17 | 가부시키가이샤 니콘 | 주사형노광장치및노광방법 |
Also Published As
Publication number | Publication date |
---|---|
JP4649717B2 (ja) | 2011-03-16 |
KR20010039943A (ko) | 2001-05-15 |
JP2001166497A (ja) | 2001-06-22 |
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