KR100805138B1 - Ｒｆ 바이어스를 제어하는 플라즈마 처리 방법 및 장치 - Google Patents

Ｒｆ 바이어스를 제어하는 플라즈마 처리 방법 및 장치 Download PDF

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Publication number
KR100805138B1
KR100805138B1 KR1020017012439A KR20017012439A KR100805138B1 KR 100805138 B1 KR100805138 B1 KR 100805138B1 KR 1020017012439 A KR1020017012439 A KR 1020017012439A KR 20017012439 A KR20017012439 A KR 20017012439A KR 100805138 B1 KR100805138 B1 KR 100805138B1
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KR
South Korea
Prior art keywords
plasma
impedance
power
alternating current
source
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KR1020017012439A
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English (en)
Korean (ko)
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KR20020013841A (ko
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아써 엠. 하워드
존 피. 홀랜드
크리스토퍼 올슨
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/40—Automatic matching of load impedance to source impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
KR1020017012439A 1999-03-31 2000-02-10 Ｒｆ 바이어스를 제어하는 플라즈마 처리 방법 및 장치 KR100805138B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/281,808 US6265831B1 (en) 1999-03-31 1999-03-31 Plasma processing method and apparatus with control of rf bias
US09/281,808 1999-03-31

Publications (2)

Publication Number Publication Date
KR20020013841A KR20020013841A (ko) 2002-02-21
KR100805138B1 true KR100805138B1 (ko) 2008-02-21

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KR1020017012439A KR100805138B1 (ko) 1999-03-31 2000-02-10 Ｒｆ 바이어스를 제어하는 플라즈마 처리 방법 및 장치

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US (1) US6265831B1 (US06265831-20010724-M00002.png)
EP (1) EP1166322B1 (US06265831-20010724-M00002.png)
JP (2) JP4601179B2 (US06265831-20010724-M00002.png)
KR (1) KR100805138B1 (US06265831-20010724-M00002.png)
DE (1) DE60034321T2 (US06265831-20010724-M00002.png)
TW (1) TW466535B (US06265831-20010724-M00002.png)
WO (1) WO2000058992A1 (US06265831-20010724-M00002.png)

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JP7011730B2 (ja) 2017-12-04 2022-01-27 エアロジェット ロケットダイン インコーポレイテッド 負荷インピーダンステスターおよび測定方法
CN112119485B (zh) 2019-04-22 2024-01-02 株式会社日立高新技术 等离子处理方法
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JP7110492B2 (ja) 2020-06-16 2022-08-01 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
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JP2024514105A (ja) * 2021-04-07 2024-03-28 ラム リサーチ コーポレーション プラズマシース特性を制御するためのシステムおよび方法

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Also Published As

Publication number Publication date
JP2010251768A (ja) 2010-11-04
JP4601179B2 (ja) 2010-12-22
WO2000058992A1 (en) 2000-10-05
JP2002540615A (ja) 2002-11-26
EP1166322B1 (en) 2007-04-11
US6265831B1 (en) 2001-07-24
EP1166322A1 (en) 2002-01-02
DE60034321T2 (de) 2007-08-30
TW466535B (en) 2001-12-01
JP5334914B2 (ja) 2013-11-06
KR20020013841A (ko) 2002-02-21
DE60034321D1 (de) 2007-05-24

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