KR100782315B1 - 펄스화 광대역의 광원을 이용하는 플라즈마 에칭 및 퇴적 프로세스의 인-시튜 모니터링 방법 및 장치 - Google Patents
펄스화 광대역의 광원을 이용하는 플라즈마 에칭 및 퇴적 프로세스의 인-시튜 모니터링 방법 및 장치 Download PDFInfo
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- KR100782315B1 KR100782315B1 KR1020027004057A KR20027004057A KR100782315B1 KR 100782315 B1 KR100782315 B1 KR 100782315B1 KR 1020027004057 A KR1020027004057 A KR 1020027004057A KR 20027004057 A KR20027004057 A KR 20027004057A KR 100782315 B1 KR100782315 B1 KR 100782315B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
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Claims (31)
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- 웨이퍼의 플라즈마 퇴적 프로세스 동안 프로세스 파라미터를 결정하는 프로세스 모니터로서,광대역의 광학 방사선을 방출하는 섬광등;상기 웨이퍼로부터 반사된 광학 방사선에 반응하는 분광기; 및상기 웨이퍼로부터 반사된 방출 광학 방사선을 나타내는, 상기 분광기로부터의 제 1 신호를 처리하고, 프로세스 파라미터를 결정하는 데이터 처리소자를 구비하며,상기 섬광등이 광대역의 광학 방사선을 방출하지 않는 기간 동안에 상기 웨이퍼로부터 반사된 광학 방사선을 나타내는 제 2 신호는 상기 데이터 처리소자에 의해 처리되고, 상기 제 1 신호로부터 감산되어 프로세스 파라미터가 결정되는, 프로세스 모니터.
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- 웨이퍼의 플라즈마 프로세스 동안 프로세스 파라미터를 결정하는, 프로세스 모니터링 방법으로서,광대역의 광학 방사선을 방출하는 섬광등을 제공하는 단계;상기 웨이퍼로부터 반사된 광학 방사선에 반응하는 분광기를 제공하는 단계; 및상기 웨이퍼로부터 반사된 방출 광학 방사선을 나타내는, 상기 분광기로부터의 제 1 신호를 처리하고, 프로세스 파라미터를 결정하며, 상기 섬광등에 분광기 적분 기간을 동기화시키는 데이터 처리소자를 제공하는 단계를 포함하는, 프로세스 모니터링 방법.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US09/409,842 US6160621A (en) | 1999-09-30 | 1999-09-30 | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
US09/409,842 | 1999-09-30 |
Related Child Applications (1)
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KR1020077016805A Division KR100797420B1 (ko) | 1999-09-30 | 2000-09-27 | 펄스화 광대역의 광원을 이용하는 플라즈마 에칭 및 퇴적프로세스의 인-시튜 모니터링 방법 및 장치 |
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KR20020035159A KR20020035159A (ko) | 2002-05-09 |
KR100782315B1 true KR100782315B1 (ko) | 2007-12-06 |
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KR1020077016805A KR100797420B1 (ko) | 1999-09-30 | 2000-09-27 | 펄스화 광대역의 광원을 이용하는 플라즈마 에칭 및 퇴적프로세스의 인-시튜 모니터링 방법 및 장치 |
KR1020027004057A KR100782315B1 (ko) | 1999-09-30 | 2000-09-27 | 펄스화 광대역의 광원을 이용하는 플라즈마 에칭 및 퇴적 프로세스의 인-시튜 모니터링 방법 및 장치 |
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KR1020077016805A KR100797420B1 (ko) | 1999-09-30 | 2000-09-27 | 펄스화 광대역의 광원을 이용하는 플라즈마 에칭 및 퇴적프로세스의 인-시튜 모니터링 방법 및 장치 |
Country Status (9)
Country | Link |
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US (2) | US6160621A (ko) |
EP (1) | EP1218689B1 (ko) |
JP (3) | JP4938948B2 (ko) |
KR (2) | KR100797420B1 (ko) |
CN (1) | CN1148563C (ko) |
AU (1) | AU7619800A (ko) |
DE (1) | DE60024291T2 (ko) |
ES (1) | ES2250191T3 (ko) |
WO (1) | WO2001023830A1 (ko) |
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FR2760085B1 (fr) * | 1997-02-26 | 1999-05-14 | Instruments Sa | Dispositif et procede de mesures tridimensionnelles et d'observation in situ d'une couche superficielle deposee sur un empilement de couches minces |
JPH1114312A (ja) * | 1997-06-24 | 1999-01-22 | Toshiba Corp | 成膜装置及びエッチング装置 |
JPH11307604A (ja) * | 1998-04-17 | 1999-11-05 | Toshiba Corp | プロセスモニタ方法及びプロセス装置 |
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1999
- 1999-09-30 US US09/409,842 patent/US6160621A/en not_active Ceased
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2000
- 2000-09-27 WO PCT/US2000/026613 patent/WO2001023830A1/en active IP Right Grant
- 2000-09-27 KR KR1020077016805A patent/KR100797420B1/ko active IP Right Grant
- 2000-09-27 JP JP2001527169A patent/JP4938948B2/ja not_active Expired - Lifetime
- 2000-09-27 AU AU76198/00A patent/AU7619800A/en not_active Abandoned
- 2000-09-27 EP EP00965488A patent/EP1218689B1/en not_active Expired - Lifetime
- 2000-09-27 ES ES00965488T patent/ES2250191T3/es not_active Expired - Lifetime
- 2000-09-27 CN CNB008136416A patent/CN1148563C/zh not_active Expired - Lifetime
- 2000-09-27 DE DE60024291T patent/DE60024291T2/de not_active Expired - Lifetime
- 2000-09-27 KR KR1020027004057A patent/KR100782315B1/ko active IP Right Grant
-
2003
- 2003-06-26 US US10/603,740 patent/USRE39145E1/en not_active Expired - Lifetime
-
2011
- 2011-07-15 JP JP2011156942A patent/JP2011238958A/ja active Pending
- 2011-07-15 JP JP2011156941A patent/JP2011238957A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0881040A2 (en) | 1997-05-28 | 1998-12-02 | LAM Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
Also Published As
Publication number | Publication date |
---|---|
DE60024291T2 (de) | 2006-07-20 |
USRE39145E1 (en) | 2006-06-27 |
US6160621A (en) | 2000-12-12 |
JP2004507070A (ja) | 2004-03-04 |
EP1218689B1 (en) | 2005-11-23 |
EP1218689A1 (en) | 2002-07-03 |
KR100797420B1 (ko) | 2008-01-23 |
CN1148563C (zh) | 2004-05-05 |
ES2250191T3 (es) | 2006-04-16 |
KR20020035159A (ko) | 2002-05-09 |
WO2001023830A1 (en) | 2001-04-05 |
AU7619800A (en) | 2001-04-30 |
JP2011238957A (ja) | 2011-11-24 |
JP4938948B2 (ja) | 2012-05-23 |
KR20070087193A (ko) | 2007-08-27 |
CN1377457A (zh) | 2002-10-30 |
DE60024291D1 (de) | 2005-12-29 |
JP2011238958A (ja) | 2011-11-24 |
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