KR100763085B1 - 고체 촬상 센서 및 그 구동 방법 - Google Patents

고체 촬상 센서 및 그 구동 방법 Download PDF

Info

Publication number
KR100763085B1
KR100763085B1 KR1019990061532A KR19990061532A KR100763085B1 KR 100763085 B1 KR100763085 B1 KR 100763085B1 KR 1019990061532 A KR1019990061532 A KR 1019990061532A KR 19990061532 A KR19990061532 A KR 19990061532A KR 100763085 B1 KR100763085 B1 KR 100763085B1
Authority
KR
South Korea
Prior art keywords
read
pixel
gate electrodes
pixels
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990061532A
Other languages
English (en)
Korean (ko)
Other versions
KR20000048380A (ko
Inventor
나까가와신지
Original Assignee
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR20000048380A publication Critical patent/KR20000048380A/ko
Application granted granted Critical
Publication of KR100763085B1 publication Critical patent/KR100763085B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1019990061532A 1998-12-25 1999-12-24 고체 촬상 센서 및 그 구동 방법 Expired - Fee Related KR100763085B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1998-370842 1998-12-25
JP37084298A JP4178638B2 (ja) 1998-12-25 1998-12-25 固体撮像素子及びその駆動方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020070002030A Division KR100787259B1 (ko) 1998-12-25 2007-01-08 고체 이미지 센서 및 그 구동 방법

Publications (2)

Publication Number Publication Date
KR20000048380A KR20000048380A (ko) 2000-07-25
KR100763085B1 true KR100763085B1 (ko) 2007-10-04

Family

ID=18497697

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990061532A Expired - Fee Related KR100763085B1 (ko) 1998-12-25 1999-12-24 고체 촬상 센서 및 그 구동 방법

Country Status (5)

Country Link
US (1) US6833872B1 (enExample)
EP (1) EP1014700B1 (enExample)
JP (1) JP4178638B2 (enExample)
KR (1) KR100763085B1 (enExample)
DE (1) DE69941144D1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3607866B2 (ja) * 2000-12-12 2005-01-05 オリンパス株式会社 撮像装置
JP4725049B2 (ja) 2004-07-29 2011-07-13 ソニー株式会社 固体撮像装置およびその製造方法
KR101112554B1 (ko) * 2005-04-11 2012-02-15 삼성전자주식회사 표시 장치의 구동 장치 및 이를 포함하는 표시 장치
JP7072362B2 (ja) * 2017-09-26 2022-05-20 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06165046A (ja) * 1992-11-20 1994-06-10 Matsushita Electron Corp 固体撮像装置の駆動方法
JPH08251491A (ja) * 1995-03-10 1996-09-27 Nec Corp 固体撮像装置
KR0165338B1 (ko) * 1995-12-30 1998-12-15 김광호 Ccd형 고체촬영소자, 이를 제조하는 방법 및 이를 구동하는 방법
JP2853216B2 (ja) * 1989-11-09 1999-02-03 日本電気株式会社 固体撮像装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2517544B2 (ja) 1985-07-08 1996-07-24 キヤノン株式会社 撮像装置
US5235198A (en) 1989-11-29 1993-08-10 Eastman Kodak Company Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel
US5051832A (en) 1990-02-12 1991-09-24 Eastman Kodak Company Selective operation in interlaced and non-interlaced modes of interline transfer CCD image sensing device
EP0876053B1 (en) 1992-11-20 2001-08-01 Matsushita Electronics Corporation Method for driving a solid state image sensor
SG88729A1 (en) 1996-03-06 2002-05-21 Sony Corp Image pickup apparatus and solid state image pickup device
US20010012067A1 (en) 1996-04-12 2001-08-09 Stuart M. Spitzer High definition television progressive scan broadcast camera
TW364265B (en) * 1997-01-31 1999-07-11 Sanyo Electric Co Solid image sensor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2853216B2 (ja) * 1989-11-09 1999-02-03 日本電気株式会社 固体撮像装置
JPH06165046A (ja) * 1992-11-20 1994-06-10 Matsushita Electron Corp 固体撮像装置の駆動方法
JPH08251491A (ja) * 1995-03-10 1996-09-27 Nec Corp 固体撮像装置
KR0165338B1 (ko) * 1995-12-30 1998-12-15 김광호 Ccd형 고체촬영소자, 이를 제조하는 방법 및 이를 구동하는 방법

Also Published As

Publication number Publication date
EP1014700A2 (en) 2000-06-28
EP1014700B1 (en) 2009-07-22
JP2000196964A (ja) 2000-07-14
DE69941144D1 (de) 2009-09-03
US6833872B1 (en) 2004-12-21
EP1014700A3 (en) 2004-04-28
JP4178638B2 (ja) 2008-11-12
KR20000048380A (ko) 2000-07-25

Similar Documents

Publication Publication Date Title
KR100347507B1 (ko) Ccd고체촬상소자및그구동방법
JP3353921B2 (ja) 固体撮像装置
US7196303B2 (en) CCD image sensor
US6576938B1 (en) Image sensing array with sweep means for sweeping charges in non selected registers in the array
US5199053A (en) Charge transfer device output
KR100763085B1 (ko) 고체 촬상 센서 및 그 구동 방법
US4903284A (en) Accordion-type charge-coupled devices
KR100787259B1 (ko) 고체 이미지 센서 및 그 구동 방법
EP0621726A1 (en) Method of and apparatus for solid state imaging device
KR100381687B1 (ko) 고체촬상소자및고체촬상소자의구동방법
JPS5847379A (ja) 固体撮像装置
US5485207A (en) CCD image sensor for normal and mirror images
EP0495521B1 (en) Solid state imager
JP3057534B2 (ja) リニアセンサ及びその駆動方法
KR100632334B1 (ko) 고체 촬상 장치 및 그 구동 방법
JPH03123278A (ja) 固体撮像装置
US6355949B1 (en) Solid state imaging apparatus with horizontal charge transfer register which can transfer signal charge faster
US6207982B1 (en) Solid-state image pickup device capable of high-speed transfer of signal charges in horizontal direction
JP4269701B2 (ja) 固体撮像装置の駆動方法
JPH03171771A (ja) 固体撮像装置及びその駆動方法
JP3008629B2 (ja) 固体撮像素子
JPH06268923A (ja) 固体撮像装置の駆動方法
JP3523694B2 (ja) 電荷転送方法及び固体撮像装置
JP3038902B2 (ja) 固体撮像装置
KR20050113115A (ko) 고체 촬상 장치 및 화소 데이터 판독 전압 인가 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20110915

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120917

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130922

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130922

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000