KR100751986B1 - 플라즈마 도핑 시스템용 도즈 모니터 - Google Patents

플라즈마 도핑 시스템용 도즈 모니터 Download PDF

Info

Publication number
KR100751986B1
KR100751986B1 KR1020027007166A KR20027007166A KR100751986B1 KR 100751986 B1 KR100751986 B1 KR 100751986B1 KR 1020027007166 A KR1020027007166 A KR 1020027007166A KR 20027007166 A KR20027007166 A KR 20027007166A KR 100751986 B1 KR100751986 B1 KR 100751986B1
Authority
KR
South Korea
Prior art keywords
faraday cup
plasma
wall
platen
inner chamber
Prior art date
Application number
KR1020027007166A
Other languages
English (en)
Korean (ko)
Other versions
KR20020059842A (ko
Inventor
팡지웨이
괴크너매튜
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20020059842A publication Critical patent/KR20020059842A/ko
Application granted granted Critical
Publication of KR100751986B1 publication Critical patent/KR100751986B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24405—Faraday cages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry
KR1020027007166A 1999-12-06 2000-11-29 플라즈마 도핑 시스템용 도즈 모니터 KR100751986B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/455,550 1999-12-06
US09/455,550 US6300643B1 (en) 1998-08-03 1999-12-06 Dose monitor for plasma doping system

Publications (2)

Publication Number Publication Date
KR20020059842A KR20020059842A (ko) 2002-07-13
KR100751986B1 true KR100751986B1 (ko) 2007-08-28

Family

ID=23809280

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027007166A KR100751986B1 (ko) 1999-12-06 2000-11-29 플라즈마 도핑 시스템용 도즈 모니터

Country Status (6)

Country Link
US (3) US6300643B1 (ja)
EP (1) EP1236221A1 (ja)
JP (2) JP5013563B2 (ja)
KR (1) KR100751986B1 (ja)
TW (1) TW483021B (ja)
WO (1) WO2001041183A1 (ja)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7430984B2 (en) 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US20030101935A1 (en) * 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems
TWI312645B (en) * 2002-07-11 2009-07-21 Panasonic Corporatio Method and apparatus for plasma doping
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
KR20050034731A (ko) * 2002-08-02 2005-04-14 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 희석 가스 스퍼터링에 의한 플라즈마 증착 표면층의 제거
DE10258118A1 (de) * 2002-12-06 2004-07-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Messen und zur Bestimmung von Ladungsträgerströmen und davon ableitbaren Größen in ionen- und plasmagestützten Prozessen
JP4274017B2 (ja) * 2003-10-15 2009-06-03 株式会社島津製作所 成膜装置
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7338683B2 (en) * 2004-05-10 2008-03-04 Superpower, Inc. Superconductor fabrication processes
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
US20050287307A1 (en) * 2004-06-23 2005-12-29 Varian Semiconductor Equipment Associates, Inc. Etch and deposition control for plasma implantation
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
US20060043531A1 (en) * 2004-08-27 2006-03-02 Varian Semiconductor Equipment Associates, Inc. Reduction of source and drain parasitic capacitance in CMOS devices
US7666464B2 (en) 2004-10-23 2010-02-23 Applied Materials, Inc. RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor
JP5080810B2 (ja) * 2004-11-02 2012-11-21 パナソニック株式会社 プラズマ処理方法およびプラズマ処理装置
US20060099830A1 (en) * 2004-11-05 2006-05-11 Varian Semiconductor Equipment Associates, Inc. Plasma implantation using halogenated dopant species to limit deposition of surface layers
WO2006099438A1 (en) * 2005-03-15 2006-09-21 Varian Semiconductor Equipment Associates, Inc. Profile adjustment in plasma ion implantation
JP5102615B2 (ja) 2005-04-04 2012-12-19 パナソニック株式会社 プラズマ処理方法及び装置
US7428915B2 (en) 2005-04-26 2008-09-30 Applied Materials, Inc. O-ringless tandem throttle valve for a plasma reactor chamber
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
KR100635786B1 (ko) * 2005-10-05 2006-10-18 삼성전자주식회사 플라스마 도핑 방법 및 이를 수행하기 위한 플라스마 도핑장치
KR100659148B1 (ko) * 2005-10-05 2006-12-19 삼성전자주식회사 플라스마 도핑 방법 및 이를 수행하기 위한 플라스마 도핑장치
US7683348B2 (en) * 2006-10-11 2010-03-23 Axcelis Technologies, Inc. Sensor for ion implanter
US20080160170A1 (en) * 2006-12-28 2008-07-03 Varian Semiconductor Equipment Assoicates, Inc. Technique for using an improved shield ring in plasma-based ion implantation
US7592212B2 (en) * 2007-04-06 2009-09-22 Micron Technology, Inc. Methods for determining a dose of an impurity implanted in a semiconductor substrate
US7518130B2 (en) * 2007-04-30 2009-04-14 United Microelectronics Corp. Ion beam blocking component and ion beam blocking device having the same
KR100855002B1 (ko) * 2007-05-23 2008-08-28 삼성전자주식회사 플라즈마 이온 주입시스템
EP2053631A1 (fr) * 2007-10-22 2009-04-29 Industrial Plasma Services & Technologies - IPST GmbH Procédé et dispositif pour le traitement par plasma de substrats au défilé
US20090104719A1 (en) * 2007-10-23 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System with In-Situ Chamber Condition Monitoring
US20090121122A1 (en) * 2007-11-13 2009-05-14 Varian Semiconductor Equipment Associates, Inc. Techniques for measuring and controlling ion beam angle and density uniformity
JP5097632B2 (ja) * 2008-07-11 2012-12-12 株式会社日立ハイテクノロジーズ プラズマエッチング処理装置
US20100155600A1 (en) * 2008-12-23 2010-06-24 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for plasma dose measurement
US8603591B2 (en) 2009-04-03 2013-12-10 Varian Semiconductor Ewuipment Associates, Inc. Enhanced etch and deposition profile control using plasma sheath engineering
US8623171B2 (en) * 2009-04-03 2014-01-07 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US8101510B2 (en) * 2009-04-03 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Plasma processing apparatus
US8188445B2 (en) * 2009-04-03 2012-05-29 Varian Semiconductor Equipment Associates, Inc. Ion source
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8124939B2 (en) * 2009-09-24 2012-02-28 Asml Netherlands B.V. Radiation detector
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
FR2961010A1 (fr) * 2010-06-03 2011-12-09 Ion Beam Services Dispositif de mesure de dose pour l'implantation ionique en mode immersion plasma
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9383460B2 (en) 2012-05-14 2016-07-05 Bwxt Nuclear Operations Group, Inc. Beam imaging sensor
US9535100B2 (en) 2012-05-14 2017-01-03 Bwxt Nuclear Operations Group, Inc. Beam imaging sensor and method for using same
JP2015213159A (ja) * 2014-05-05 2015-11-26 東京エレクトロン株式会社 プラズマ処理装置および計測方法
US9659797B1 (en) * 2014-09-17 2017-05-23 Sandia Corporation Wafer scale oblique angle plasma etching
US9773712B2 (en) 2015-08-25 2017-09-26 Toshiba Memory Corporation Ion implantation apparatus and semiconductor manufacturing method
US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169431A (ja) * 1993-12-15 1995-07-04 Nissin Electric Co Ltd イオン注入装置
JPH08111197A (ja) * 1994-10-07 1996-04-30 Res Dev Corp Of Japan クラスタービームの強度とクラスターサイズ 分布の測定方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021675A (en) 1973-02-20 1977-05-03 Hughes Aircraft Company System for controlling ion implantation dosage in electronic materials
US4135097A (en) 1977-05-05 1979-01-16 International Business Machines Corporation Ion implantation apparatus for controlling the surface potential of a target surface
US4234797A (en) 1979-05-23 1980-11-18 Nova Associates, Inc. Treating workpieces with beams
US4228358A (en) 1979-05-23 1980-10-14 Nova Associates, Inc. Wafer loading apparatus for beam treatment
US4361762A (en) 1980-07-30 1982-11-30 Rca Corporation Apparatus and method for neutralizing the beam in an ion implanter
US4463255A (en) 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
JPS5826441A (ja) * 1981-08-10 1983-02-16 Nippon Telegr & Teleph Corp <Ntt> イオン注入装置
US4433247A (en) 1981-09-28 1984-02-21 Varian Associates, Inc. Beam sharing method and apparatus for ion implantation
JPS5871546A (ja) * 1981-10-23 1983-04-28 Fujitsu Ltd イオン注入装置
US4421988A (en) 1982-02-18 1983-12-20 Varian Associates, Inc. Beam scanning method and apparatus for ion implantation
US4786814A (en) 1983-09-16 1988-11-22 General Electric Company Method of reducing electrostatic charge on ion-implanted devices
US4595837A (en) 1983-09-16 1986-06-17 Rca Corporation Method for preventing arcing in a device during ion-implantation
JPH0626107B2 (ja) * 1984-04-28 1994-04-06 富士通株式会社 荷電粒子照射装置
US4587433A (en) 1984-06-27 1986-05-06 Eaton Corporation Dose control apparatus
US4539217A (en) 1984-06-27 1985-09-03 Eaton Corporation Dose control method
US4751393A (en) * 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
US4744938A (en) 1986-08-18 1988-05-17 Westinghouse Electric Corp. Method and apparatus for producing ultralowmass fissionable deposits for reactor neutron dosimetry by recoil ion-implantation
DE3700633C2 (de) 1987-01-12 1997-02-20 Reinar Dr Gruen Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma
US4764394A (en) 1987-01-20 1988-08-16 Wisconsin Alumni Research Foundation Method and apparatus for plasma source ion implantation
KR930003857B1 (ko) 1987-08-05 1993-05-14 마쯔시다덴기산교 가부시기가이샤 플라즈마 도우핑방법
US5103161A (en) * 1990-07-03 1992-04-07 The United States Of America As Represented By The United States Department Of Energy Stripline fast faraday cup for measuring GHz structure of ion beams
JP2719036B2 (ja) 1990-08-10 1998-02-25 株式会社富士電機総合研究所 非晶質光電変換装置およびその製造方法
US5126163A (en) 1990-09-05 1992-06-30 Northeastern University Method for metal ion implantation using multiple pulsed arcs
JPH0517910U (ja) * 1991-08-20 1993-03-05 日新電機株式会社 フアラデーケージ
JP2799090B2 (ja) 1991-09-09 1998-09-17 シャープ株式会社 イオン注入装置
US5286676A (en) 1992-06-15 1994-02-15 Hewlett-Packard Company Methods of making integrated circuit barrier structures
JP2671723B2 (ja) * 1992-07-16 1997-10-29 日新電機株式会社 イオン注入装置
US5289010A (en) 1992-12-08 1994-02-22 Wisconsin Alumni Research Foundation Ion purification for plasma ion implantation
US5374456A (en) 1992-12-23 1994-12-20 Hughes Aircraft Company Surface potential control in plasma processing of materials
US5583427A (en) * 1992-12-28 1996-12-10 Regents Of The University Of California Tomographic determination of the power distribution in electron beams
US5728253A (en) 1993-03-04 1998-03-17 Tokyo Electron Limited Method and devices for detecting the end point of plasma process
US5825035A (en) 1993-03-10 1998-10-20 Hitachi, Ltd. Processing method and apparatus using focused ion beam generating means
US5572038A (en) 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5354381A (en) 1993-05-07 1994-10-11 Varian Associates, Inc. Plasma immersion ion implantation (PI3) apparatus
US5498290A (en) * 1993-08-27 1996-03-12 Hughes Aircraft Company Confinement of secondary electrons in plasma ion processing
US5711812A (en) 1995-06-06 1998-01-27 Varian Associates, Inc. Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5658423A (en) 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
GB2314202B (en) 1996-06-14 2000-08-09 Applied Materials Inc Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
US5654043A (en) * 1996-10-10 1997-08-05 Eaton Corporation Pulsed plate plasma implantation system and method
US5911832A (en) 1996-10-10 1999-06-15 Eaton Corporation Plasma immersion implantation with pulsed anode
US5814823A (en) * 1997-07-12 1998-09-29 Eaton Corporation System and method for setecing neutral particles in an ion bean
JPH11154485A (ja) * 1997-11-19 1999-06-08 Nissin Electric Co Ltd 質量分析装置およびそれを備えるイオン注入装置
JPH11329336A (ja) * 1998-05-11 1999-11-30 Nissin Electric Co Ltd イオン注入装置
US6101971A (en) * 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6020592A (en) * 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
JP4003308B2 (ja) * 1998-08-17 2007-11-07 日新イオン機器株式会社 ビーム量計測装置
US6050218A (en) 1998-09-28 2000-04-18 Eaton Corporation Dosimetry cup charge collection in plasma immersion ion implantation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169431A (ja) * 1993-12-15 1995-07-04 Nissin Electric Co Ltd イオン注入装置
JPH08111197A (ja) * 1994-10-07 1996-04-30 Res Dev Corp Of Japan クラスタービームの強度とクラスターサイズ 分布の測定方法

Also Published As

Publication number Publication date
US20010042827A1 (en) 2001-11-22
JP2012109570A (ja) 2012-06-07
WO2001041183A1 (en) 2001-06-07
US6300643B1 (en) 2001-10-09
JP2003515945A (ja) 2003-05-07
JP5013563B2 (ja) 2012-08-29
WO2001041183A8 (en) 2002-05-23
KR20020059842A (ko) 2002-07-13
US20020030167A1 (en) 2002-03-14
WO2001041183A9 (en) 2002-06-20
TW483021B (en) 2002-04-11
EP1236221A1 (en) 2002-09-04
US6528805B2 (en) 2003-03-04

Similar Documents

Publication Publication Date Title
KR100751986B1 (ko) 플라즈마 도핑 시스템용 도즈 모니터
KR100631441B1 (ko) 플라즈마 침지 이온 주입 도핑 장치용 투여량 모니터
KR101153106B1 (ko) 플라즈마 기반 이온주입을 위한 패러데이 도즈 및 균일성모니터
KR101185370B1 (ko) 이차원 이온빔 프로파일용 장치 및 방법
US5969366A (en) Ion implanter with post mass selection deceleration
KR101453093B1 (ko) 이온주입장치 및 이온주입방법
US20100159120A1 (en) Plasma ion process uniformity monitor
US20120021136A1 (en) System and method for controlling plasma deposition uniformity
US6723998B2 (en) Faraday system for ion implanters
KR20060120107A (ko) 이온 주입기 전극들
GB2307096A (en) An ion implanter with post mass selection deceleration
Dorai et al. SHk kkkk Miller, South Hamilton,* cited by examiner Primary Examiner–Jack Berman (73) Assignee: Varian Semiconductor Equipment Assistant Examiner–Zia R. Hashmi

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Publication of correction
FPAY Annual fee payment

Payment date: 20120806

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20130729

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee