KR100748050B1 - 가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기 - Google Patents

가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기 Download PDF

Info

Publication number
KR100748050B1
KR100748050B1 KR1020017016487A KR20017016487A KR100748050B1 KR 100748050 B1 KR100748050 B1 KR 100748050B1 KR 1020017016487 A KR1020017016487 A KR 1020017016487A KR 20017016487 A KR20017016487 A KR 20017016487A KR 100748050 B1 KR100748050 B1 KR 100748050B1
Authority
KR
South Korea
Prior art keywords
plasma
coil
amplitude
manufacturing process
envelope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020017016487A
Other languages
English (en)
Korean (ko)
Other versions
KR20020031344A (ko
Inventor
존 홀랜드
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20020031344A publication Critical patent/KR20020031344A/ko
Application granted granted Critical
Publication of KR100748050B1 publication Critical patent/KR100748050B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020017016487A 1999-06-30 2000-06-22 가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기 Expired - Lifetime KR100748050B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/343,246 1999-06-30
US09/343,246 US6319355B1 (en) 1999-06-30 1999-06-30 Plasma processor with coil responsive to variable amplitude rf envelope

Publications (2)

Publication Number Publication Date
KR20020031344A KR20020031344A (ko) 2002-05-01
KR100748050B1 true KR100748050B1 (ko) 2007-08-09

Family

ID=23345299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017016487A Expired - Lifetime KR100748050B1 (ko) 1999-06-30 2000-06-22 가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기

Country Status (7)

Country Link
US (1) US6319355B1 (https=)
EP (1) EP1190436B1 (https=)
JP (1) JP5031159B2 (https=)
KR (1) KR100748050B1 (https=)
DE (1) DE60039874D1 (https=)
TW (1) TW494707B (https=)
WO (1) WO2001001443A1 (https=)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531029B1 (en) * 2000-06-30 2003-03-11 Lam Research Corporation Vacuum plasma processor apparatus and method
US6583572B2 (en) * 2001-03-30 2003-06-24 Lam Research Corporation Inductive plasma processor including current sensor for plasma excitation coil
US7096819B2 (en) * 2001-03-30 2006-08-29 Lam Research Corporation Inductive plasma processor having coil with plural windings and method of controlling plasma density
US6597117B2 (en) * 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
US7169255B2 (en) * 2002-02-15 2007-01-30 Hitachi High-Technologies Corporation Plasma processing apparatus
US6783629B2 (en) 2002-03-11 2004-08-31 Yuri Glukhoy Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
EP1803142A1 (en) * 2004-09-24 2007-07-04 Zond, Inc. Apparatus for generating high-current electrical discharges
US8192576B2 (en) 2006-09-20 2012-06-05 Lam Research Corporation Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing
US20080204795A1 (en) * 2007-02-23 2008-08-28 Samsung Electronics Co., Ltd. Data transmission apparatus and method of controlling the same and method of processing data to be printed onto a printable medium
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US9123509B2 (en) 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090017229A1 (en) * 2007-07-10 2009-01-15 Varian Semiconductor Equipment Associates, Inc. Processing System Platen having a Variable Thermal Conductivity Profile
US7927986B2 (en) * 2008-07-22 2011-04-19 Varian Semiconductor Equipment Associates, Inc. Ion implantation with heavy halogenide compounds
US20100048018A1 (en) * 2008-08-25 2010-02-25 Varian Semiconductor Equipment Associates, Inc. Doped Layers for Reducing Electromigration
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
US8659335B2 (en) * 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
JP5546921B2 (ja) * 2010-03-26 2014-07-09 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US8828883B2 (en) * 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
US9460894B2 (en) * 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
US9502221B2 (en) * 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
TWI501307B (zh) * 2013-07-31 2015-09-21 盛美半導體設備（上海）有限公司 Pulse electrochemical polishing method and device
US10573496B2 (en) * 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
EP3088435A1 (de) 2015-04-28 2016-11-02 Sika Technology AG Zweistufiges verfahren zur herstellung eines polyurethan-heissschmelzklebstoffs mit niedrigem gehalt an monomeren diisocyanaten und hoher anfangsfestigkeit
KR20220123284A (ko) * 2020-05-01 2022-09-06 매슨 테크놀로지 인크 표면 트리트먼트 처리를 위한 펄스 유도 결합 플라즈마의 방법 및 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0813227A2 (en) * 1996-06-10 1997-12-17 Lam Research Corporation RF plasma processors

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2212974B (en) 1987-11-25 1992-02-12 Fuji Electric Co Ltd Plasma processing apparatus
DE69017744T2 (de) 1989-04-27 1995-09-14 Fuji Electric Co Ltd Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas.
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5304279A (en) 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
JPH08979B2 (ja) * 1991-12-06 1996-01-10 日新電機株式会社 プラズマｃｖｄ法及び装置
US5226967A (en) 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5277751A (en) 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
KR100238627B1 (ko) 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
US5401350A (en) 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
JP3202877B2 (ja) * 1994-08-30 2001-08-27 東京エレクトロン株式会社 プラズマアッシング装置
JP3105403B2 (ja) 1994-09-14 2000-10-30 松下電器産業株式会社 プラズマ処理装置
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
US5731565A (en) * 1995-07-27 1998-03-24 Lam Research Corporation Segmented coil for generating plasma in plasma processing equipment
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
US5759280A (en) 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5800619A (en) 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
JP3220394B2 (ja) * 1996-09-27 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置
JP3559429B2 (ja) * 1997-07-02 2004-09-02 松下電器産業株式会社 プラズマ処理方法
TW396384B (en) 1997-08-07 2000-07-01 Applied Materials Inc Modulated power for ionized metal plasma deposition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0813227A2 (en) * 1996-06-10 1997-12-17 Lam Research Corporation RF plasma processors

Also Published As

Publication number Publication date
WO2001001443A1 (en) 2001-01-04
EP1190436B1 (en) 2008-08-13
TW494707B (en) 2002-07-11
WO2001001443B1 (en) 2001-02-08
EP1190436A1 (en) 2002-03-27
JP2003503839A (ja) 2003-01-28
KR20020031344A (ko) 2002-05-01
US6319355B1 (en) 2001-11-20
DE60039874D1 (de) 2008-09-25
JP5031159B2 (ja) 2012-09-19

Similar Documents

Publication Publication Date Title
KR100748050B1 (ko) 가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기
JP3739137B2 (ja) プラズマ発生装置及びこのプラズマ発生装置を使用した表面処理装置
US7426900B2 (en) Integrated electrostatic inductive coupling for plasma processing
US6022460A (en) Enhanced inductively coupled plasma reactor
JP3987131B2 (ja) 誘導増強された反応性イオンエッチング
US5622635A (en) Method for enhanced inductive coupling to plasmas with reduced sputter contamination
KR100777151B1 (ko) 하이브리드형 플라즈마 반응장치
US6451161B1 (en) Method and apparatus for generating high-density uniform plasma
KR102060223B1 (ko) 높은 종횡비 피쳐들을 에칭하기 위한 다중 주파수 전력 변조
US5759280A (en) Inductively coupled source for deriving substantially uniform plasma flux
KR100188076B1 (ko) 자기 결합성 플래너 플라즈마 형성 방법 및 장치
US6756737B2 (en) Plasma processing apparatus and method
CN1833296B (zh) 用于产生均匀处理速率的天线
KR101418438B1 (ko) 플라즈마 발생장치
US6172321B1 (en) Method and apparatus for plasma processing apparatus
US7771562B2 (en) Etch system with integrated inductive coupling
US20110059615A1 (en) Hybrid rf capacitively and inductively coupled plasma source using multifrequency rf powers and methods of use thereof
JP2002237489A (ja) 低周波誘導型高周波プラズマ反応装置
SG174503A1 (en) Multifrequency capacitively coupled plasma etch chamber
JP2004537830A (ja) 均一なプロセス速度を実現する方法および装置
KR0170387B1 (ko) 고주파 반도체 웨이퍼 가공장치 및 방법
CN111183504A (zh) 制造过程中的超局部和等离子体均匀性控制
JP5116203B2 (ja) 真空プラズマプロセッサ及びコイル
JP3973283B2 (ja) プラズマ処理装置及びプラズマ処理方法
US5470426A (en) Plasma processing apparatus

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120723

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130723

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140723

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150723

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160722

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20170726

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20180726

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20190724

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20200623

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000