KR100742451B1 - 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치 - Google Patents

발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치 Download PDF

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KR100742451B1
KR100742451B1 KR1020050091919A KR20050091919A KR100742451B1 KR 100742451 B1 KR100742451 B1 KR 100742451B1 KR 1020050091919 A KR1020050091919 A KR 1020050091919A KR 20050091919 A KR20050091919 A KR 20050091919A KR 100742451 B1 KR100742451 B1 KR 100742451B1
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South Korea
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pair
feed
cylindrical
heat
cylindrical portion
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KR1020050091919A
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Korean (ko)
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KR20070034911A (ko
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히토시 무라타
시노부 스기우라
데츠야 고스기
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가부시키가이샤 히다치 고쿠사이 덴키
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020050091919A 2005-09-26 2005-09-30 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치 KR100742451B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005277207A JP4820137B2 (ja) 2005-09-26 2005-09-26 発熱体の保持構造体
JPJP-P-2005-00277207 2005-09-26

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR20-2005-0028076U Division KR200403718Y1 (ko) 2005-09-26 2005-09-30 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치
KR1020060127695A Division KR100719307B1 (ko) 2005-09-26 2006-12-14 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치

Publications (2)

Publication Number Publication Date
KR20070034911A KR20070034911A (ko) 2007-03-29
KR100742451B1 true KR100742451B1 (ko) 2007-07-25

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KR1020050091919A KR100742451B1 (ko) 2005-09-26 2005-09-30 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치
KR1020060127695A KR100719307B1 (ko) 2005-09-26 2006-12-14 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치

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KR1020060127695A KR100719307B1 (ko) 2005-09-26 2006-12-14 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치

Country Status (4)

Country Link
JP (1) JP4820137B2 (zh)
KR (2) KR100742451B1 (zh)
CN (2) CN100452291C (zh)
TW (1) TWI308364B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4331768B2 (ja) * 2007-02-28 2009-09-16 東京エレクトロン株式会社 熱処理炉及び縦型熱処理装置
US8395096B2 (en) 2009-02-05 2013-03-12 Sandvik Thermal Process, Inc. Precision strip heating element
JP5529646B2 (ja) * 2010-06-25 2014-06-25 株式会社日立国際電気 加熱装置、基板処理装置、基板処理方法及び半導体装置の製造方法
DE202009011719U1 (de) * 2009-08-28 2010-10-21 Eugen Forschner Gmbh Einrichtung zur Kontaktierung eines beheizbaren Schlauchs
JP5565188B2 (ja) * 2010-08-10 2014-08-06 東京エレクトロン株式会社 ヒータ装置
JP5686467B2 (ja) * 2010-10-15 2015-03-18 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5802052B2 (ja) 2011-05-19 2015-10-28 株式会社ニューフレアテクノロジー 半導体製造装置及び半導体製造方法
JP5743746B2 (ja) 2011-06-27 2015-07-01 東京エレクトロン株式会社 熱処理炉及び熱処理装置
CN103484934A (zh) * 2012-06-11 2014-01-01 绿种子材料科技股份有限公司 气相沉积装置及其加热系统
JP7262194B2 (ja) * 2018-09-18 2023-04-21 東京エレクトロン株式会社 載置台及び基板処理装置
JP7484910B2 (ja) * 2019-06-20 2024-05-16 ソニーグループ株式会社 断熱構造および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001208478A (ja) 2000-01-31 2001-08-03 Tokyo Electron Ltd 熱処理装置
JP2004039967A (ja) 2002-07-05 2004-02-05 Hitachi Kokusai Electric Inc 半導体製造装置
JP2004221102A (ja) 2003-01-09 2004-08-05 Hitachi Kokusai Electric Inc 基板処理装置
JP2004289166A (ja) 2001-01-11 2004-10-14 Hitachi Kokusai Electric Inc バッチ式リモートプラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5506389A (en) * 1993-11-10 1996-04-09 Tokyo Electron Kabushiki Kaisha Thermal processing furnace and fabrication method thereof
JPH07253276A (ja) * 1994-03-16 1995-10-03 Tokyo Electron Ltd 熱処理炉及びその製造方法
US5855675A (en) * 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
KR100682190B1 (ko) * 1999-09-07 2007-02-12 동경 엘렉트론 주식회사 실리콘 산질화물을 포함하는 절연막의 형성 방법 및 장치
JP3598032B2 (ja) * 1999-11-30 2004-12-08 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法並びに保温ユニット
JP4350322B2 (ja) * 2001-04-27 2009-10-21 株式会社日立国際電気 加熱処理装置
JP2003213432A (ja) * 2002-01-24 2003-07-30 Shinko Seiki Co Ltd プラズマｃｖｄ装置用電極

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001208478A (ja) 2000-01-31 2001-08-03 Tokyo Electron Ltd 熱処理装置
JP2004289166A (ja) 2001-01-11 2004-10-14 Hitachi Kokusai Electric Inc バッチ式リモートプラズマ処理装置
JP2004039967A (ja) 2002-07-05 2004-02-05 Hitachi Kokusai Electric Inc 半導体製造装置
JP2004221102A (ja) 2003-01-09 2004-08-05 Hitachi Kokusai Electric Inc 基板処理装置

Also Published As

Publication number Publication date
CN2917150Y (zh) 2007-06-27
TWI308364B (en) 2009-04-01
KR20070034911A (ko) 2007-03-29
KR100719307B1 (ko) 2007-05-18
KR20070034978A (ko) 2007-03-29
CN100452291C (zh) 2009-01-14
JP4820137B2 (ja) 2011-11-24
JP2007088324A (ja) 2007-04-05
TW200723367A (en) 2007-06-16
CN1941278A (zh) 2007-04-04

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