JP4820137B2 - 発熱体の保持構造体 - Google Patents

発熱体の保持構造体 Download PDF

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Publication number
JP4820137B2
JP4820137B2 JP2005277207A JP2005277207A JP4820137B2 JP 4820137 B2 JP4820137 B2 JP 4820137B2 JP 2005277207 A JP2005277207 A JP 2005277207A JP 2005277207 A JP2005277207 A JP 2005277207A JP 4820137 B2 JP4820137 B2 JP 4820137B2
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JP
Japan
Prior art keywords
heating element
heat insulating
pair
cylindrical portion
insulating wall
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Active
Application number
JP2005277207A
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English (en)
Japanese (ja)
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JP2007088324A (ja
Inventor
等 村田
忍 杉浦
哲也 小杉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2005277207A priority Critical patent/JP4820137B2/ja
Priority to KR1020050091919A priority patent/KR100742451B1/ko
Priority to TW095111194A priority patent/TWI308364B/zh
Priority to CNB2006100710805A priority patent/CN100452291C/zh
Priority to CNU2006200066762U priority patent/CN2917150Y/zh
Priority to KR1020060127695A priority patent/KR100719307B1/ko
Publication of JP2007088324A publication Critical patent/JP2007088324A/ja
Application granted granted Critical
Publication of JP4820137B2 publication Critical patent/JP4820137B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Furnace Details (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2005277207A 2005-09-26 2005-09-26 発熱体の保持構造体 Active JP4820137B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005277207A JP4820137B2 (ja) 2005-09-26 2005-09-26 発熱体の保持構造体
KR1020050091919A KR100742451B1 (ko) 2005-09-26 2005-09-30 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치
TW095111194A TWI308364B (en) 2005-09-26 2006-03-30 Supporting structure for a heating element, insulating structure, heating device and substrate processing apparatus
CNB2006100710805A CN100452291C (zh) 2005-09-26 2006-03-31 发热体的保持构造体、绝缘构造体、加热装置
CNU2006200066762U CN2917150Y (zh) 2005-09-26 2006-03-31 发热体的保持构造体、绝缘构造体、加热装置
KR1020060127695A KR100719307B1 (ko) 2005-09-26 2006-12-14 발열체의 유지 구조체, 절연 구조체, 가열장치 및기판처리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005277207A JP4820137B2 (ja) 2005-09-26 2005-09-26 発熱体の保持構造体

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011157740A Division JP5426618B2 (ja) 2011-07-19 2011-07-19 絶縁構造体、加熱装置、基板処理装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2007088324A JP2007088324A (ja) 2007-04-05
JP4820137B2 true JP4820137B2 (ja) 2011-11-24

Family

ID=37959297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005277207A Active JP4820137B2 (ja) 2005-09-26 2005-09-26 発熱体の保持構造体

Country Status (4)

Country Link
JP (1) JP4820137B2 (zh)
KR (2) KR100742451B1 (zh)
CN (2) CN2917150Y (zh)
TW (1) TWI308364B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4331768B2 (ja) * 2007-02-28 2009-09-16 東京エレクトロン株式会社 熱処理炉及び縦型熱処理装置
US8395096B2 (en) 2009-02-05 2013-03-12 Sandvik Thermal Process, Inc. Precision strip heating element
JP5529646B2 (ja) * 2010-06-25 2014-06-25 株式会社日立国際電気 加熱装置、基板処理装置、基板処理方法及び半導体装置の製造方法
DE202009011719U1 (de) * 2009-08-28 2010-10-21 Eugen Forschner Gmbh Einrichtung zur Kontaktierung eines beheizbaren Schlauchs
JP5565188B2 (ja) * 2010-08-10 2014-08-06 東京エレクトロン株式会社 ヒータ装置
JP5686467B2 (ja) * 2010-10-15 2015-03-18 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5802052B2 (ja) * 2011-05-19 2015-10-28 株式会社ニューフレアテクノロジー 半導体製造装置及び半導体製造方法
JP5743746B2 (ja) * 2011-06-27 2015-07-01 東京エレクトロン株式会社 熱処理炉及び熱処理装置
CN103484934A (zh) * 2012-06-11 2014-01-01 绿种子材料科技股份有限公司 气相沉积装置及其加热系统
JP7262194B2 (ja) * 2018-09-18 2023-04-21 東京エレクトロン株式会社 載置台及び基板処理装置
WO2020255838A1 (ja) * 2019-06-20 2020-12-24 ソニー株式会社 断熱構造および電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07253276A (ja) * 1994-03-16 1995-10-03 Tokyo Electron Ltd 熱処理炉及びその製造方法
US5506389A (en) * 1993-11-10 1996-04-09 Tokyo Electron Kabushiki Kaisha Thermal processing furnace and fabrication method thereof
US5855675A (en) * 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
KR100682190B1 (ko) * 1999-09-07 2007-02-12 동경 엘렉트론 주식회사 실리콘 산질화물을 포함하는 절연막의 형성 방법 및 장치
JP3598032B2 (ja) * 1999-11-30 2004-12-08 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法並びに保温ユニット
JP2001208478A (ja) * 2000-01-31 2001-08-03 Tokyo Electron Ltd 熱処理装置
JP4267506B2 (ja) 2001-01-11 2009-05-27 株式会社日立国際電気 プラズマ処理装置
JP4350322B2 (ja) * 2001-04-27 2009-10-21 株式会社日立国際電気 加熱処理装置
JP2003213432A (ja) * 2002-01-24 2003-07-30 Shinko Seiki Co Ltd プラズマｃｖｄ装置用電極
JP3881937B2 (ja) * 2002-07-05 2007-02-14 株式会社日立国際電気 半導体製造装置または加熱装置
JP2004221102A (ja) 2003-01-09 2004-08-05 Hitachi Kokusai Electric Inc 基板処理装置

Also Published As

Publication number Publication date
CN1941278A (zh) 2007-04-04
KR100742451B1 (ko) 2007-07-25
JP2007088324A (ja) 2007-04-05
TWI308364B (en) 2009-04-01
KR20070034911A (ko) 2007-03-29
TW200723367A (en) 2007-06-16
KR20070034978A (ko) 2007-03-29
CN100452291C (zh) 2009-01-14
CN2917150Y (zh) 2007-06-27
KR100719307B1 (ko) 2007-05-18

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