KR100731255B1 - 조명광학계 및 그것을 사용한 노광장치 - Google Patents

조명광학계 및 그것을 사용한 노광장치 Download PDF

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Publication number
KR100731255B1
KR100731255B1 KR1020067004912A KR20067004912A KR100731255B1 KR 100731255 B1 KR100731255 B1 KR 100731255B1 KR 1020067004912 A KR1020067004912 A KR 1020067004912A KR 20067004912 A KR20067004912 A KR 20067004912A KR 100731255 B1 KR100731255 B1 KR 100731255B1
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South Korea
Prior art keywords
light
optical element
optical system
diffractive optical
illumination
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Expired - Fee Related
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KR1020067004912A
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English (en)
Korean (ko)
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KR20060087551A (ko
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아키요시 스즈키
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0961—Lens arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70158—Diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/32—Holograms used as optical elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020067004912A 2003-09-12 2004-09-10 조명광학계 및 그것을 사용한 노광장치 Expired - Fee Related KR100731255B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00321419 2003-09-12
JP2003321419A JP4323903B2 (ja) 2003-09-12 2003-09-12 照明光学系及びそれを用いた露光装置

Publications (2)

Publication Number Publication Date
KR20060087551A KR20060087551A (ko) 2006-08-02
KR100731255B1 true KR100731255B1 (ko) 2007-06-25

Family

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KR1020067004912A Expired - Fee Related KR100731255B1 (ko) 2003-09-12 2004-09-10 조명광학계 및 그것을 사용한 노광장치

Country Status (6)

Country Link
US (2) US7196773B2 (https=)
EP (1) EP1668679A4 (https=)
JP (1) JP4323903B2 (https=)
KR (1) KR100731255B1 (https=)
TW (1) TWI274375B (https=)
WO (1) WO2005027207A1 (https=)

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EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
TWI385414B (zh) * 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
CN101799587B (zh) 2004-01-16 2012-05-30 卡尔蔡司Smt有限责任公司 光学系统、投影系统及微结构半导体部件的制造方法
TWI395068B (zh) * 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI609410B (zh) 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
JP4497968B2 (ja) 2004-03-18 2010-07-07 キヤノン株式会社 照明装置、露光装置及びデバイス製造方法
JP2006005319A (ja) 2004-06-21 2006-01-05 Canon Inc 照明光学系及び方法、露光装置及びデバイス製造方法
JP2006179516A (ja) 2004-12-20 2006-07-06 Toshiba Corp 露光装置、露光方法及び半導体装置の製造方法
TW200923418A (en) * 2005-01-21 2009-06-01 Nikon Corp Exposure device, exposure method, fabricating method of device, exposure system, information collecting device, and measuring device
US20120258407A1 (en) * 2005-04-12 2012-10-11 Sirat Gabriel Y Multifield incoherent Lithography, Nomarski Lithography and multifield incoherent Imaging
US7924406B2 (en) * 2005-07-13 2011-04-12 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method having switch device for two illumination channels
KR20080053500A (ko) 2005-12-21 2008-06-13 가부시키가이샤 니콘 옵티컬 인테그레이터, 조명광학장치, 노광장치 및디바이스의 제조방법
JP2007220767A (ja) * 2006-02-15 2007-08-30 Canon Inc 露光装置及びデバイス製造方法
US7525642B2 (en) 2006-02-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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JP4957058B2 (ja) * 2006-04-12 2012-06-20 大日本印刷株式会社 回折光学素子、および該素子を備えた露光装置
JP4784746B2 (ja) * 2006-04-12 2011-10-05 株式会社ニコン 照明光学装置、投影露光装置、投影光学系、及びデバイス製造方法
JP4998803B2 (ja) * 2006-04-14 2012-08-15 株式会社ニコン 露光装置、デバイス製造方法、および露光方法
WO2007119514A1 (ja) * 2006-04-17 2007-10-25 Nikon Corporation 照明光学装置、露光装置、およびデバイス製造方法
EP2040283A4 (en) * 2006-07-12 2012-02-08 Nikon Corp OPTICAL LIGHTING DEVICE, EXPOSURE DEVICE AND DEVICE MANUFACTURING METHOD
JP5308638B2 (ja) * 2006-07-14 2013-10-09 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置用の照明光学系
DE102006032810A1 (de) 2006-07-14 2008-01-17 Carl Zeiss Smt Ag Beleuchtungsoptik für eine Mikrolithografie-Projektionsbelichtungsanlage, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, mikrolithografie-Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, mikrolithografisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
JP5023589B2 (ja) 2006-07-21 2012-09-12 大日本印刷株式会社 フォトマスクおよび該フォトマスクの設計方法
JP2008047673A (ja) * 2006-08-14 2008-02-28 Canon Inc 露光装置及びデバイス製造方法
DE102006038643B4 (de) 2006-08-17 2009-06-10 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
US7952685B2 (en) * 2007-03-15 2011-05-31 Carl Zeiss Smt Ag Illuminator for a lithographic apparatus and method
US20080285000A1 (en) * 2007-05-17 2008-11-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4971932B2 (ja) * 2007-10-01 2012-07-11 キヤノン株式会社 照明光学系、露光装置、デバイス製造方法および偏光制御ユニット
WO2009050966A1 (ja) * 2007-10-16 2009-04-23 Nikon Corporation 送光光学系、照明光学系、露光装置、およびデバイス製造方法
US20090180088A1 (en) * 2008-01-11 2009-07-16 Uwe Paul Schroeder Illumination Sources for Lithography Systems
DE102008009601A1 (de) * 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
WO2009128293A1 (ja) * 2008-04-14 2009-10-22 株式会社ニコン 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
JP5531955B2 (ja) * 2008-06-12 2014-06-25 株式会社ニコン 照明装置、露光装置及びデバイス製造方法
JP5167032B2 (ja) 2008-08-27 2013-03-21 キヤノン株式会社 計算機ホログラム、露光装置及びデバイスの製造方法
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
KR102250735B1 (ko) * 2012-02-29 2021-05-12 코닝 인코포레이티드 낮은 cte, 이온-교환가능한 유리 조성물 및 이를 포함하는 유리 제품
CN105026097B (zh) * 2013-03-12 2017-08-29 应用材料公司 在激光退火系统中用于控制边缘轮廓的定制光瞳光阑形状
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JPH06204121A (ja) * 1992-12-28 1994-07-22 Canon Inc 照明装置及びそれを用いた投影露光装置
JPH07135145A (ja) * 1993-06-29 1995-05-23 Canon Inc 露光装置

Also Published As

Publication number Publication date
TW200511392A (en) 2005-03-16
US20060012769A1 (en) 2006-01-19
US7196773B2 (en) 2007-03-27
KR20060087551A (ko) 2006-08-02
EP1668679A4 (en) 2008-04-30
EP1668679A1 (en) 2006-06-14
WO2005027207A1 (en) 2005-03-24
JP2005093522A (ja) 2005-04-07
JP4323903B2 (ja) 2009-09-02
US20070146677A1 (en) 2007-06-28
TWI274375B (en) 2007-02-21

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