KR100724587B1 - Device for both solder die bonding and epoxy die bonding and method for die bonding using the device - Google Patents

Abstract

A die bonding apparatus and method are provided to restrain the generation of oxidation by performing a die bonding process using a reducing cure tunnel type oven composed of a heat block, a metal belt and a reducing gas chamber. A die bonding apparatus includes dotting unit, a chip mount unit, and a reducing cure tunnel type oven. The dotting unit is used for performing an epoxy dotting process or a cream solder dotting process on a lead frame or a substrate. The chip mount unit is used for mounting a semiconductor chip on the substrate. The reducing cure tunnel type oven(450) is used for performing a reducing cure and a melting process on the chip. The reducing cure tunnel type oven includes a metal belt, a heat block and a reducing gas chamber. The metal belt(510) is capable of enduring the temperature of 500°C or more. The heater block(520) is installed on the metal belt in order to apply the heat of a constant temperature to the substrate. The reducing gas chamber is installed on the heater block. The reducing gas chamber is used for preventing oxidation as well as curing solder and epoxy.

Description

Device for both Solder Die Bonding and Epoxy Die Bonding and Method for Die Bonding Using the Device}

1 is a flowchart showing a die bonding method using a conventional epoxy resin.

2 is a flow chart showing a die bonding method using a conventional solder.

3 is a flow chart illustrating a die bonding method according to the present invention.

4 illustrates an embodiment of a die bonding according to the present invention.

5 is a cross-sectional view of a reducing cure and a reducing melting oven in a die bonding apparatus according to the present invention.

6 is a perspective view of a die bonding apparatus according to the present invention.

<Explanation of important parts of drawing>

450: reduction cure and reduction melting oven 510: metal belt

520: heater block 530: gas chamber 540: gas outlet

550: leadframe or substrate 560: solder or epoxy

570: semiconductor chip

The present invention relates to a die-bonding apparatus and method capable of combining epoxy die bonding and solder die bonding by adding a reduction cure tunnel-type oven (reduction hardening or reduction melting furnace) to the die bonder in die bonding.

Reduction cure tunnel type oven is characterized in that the metal chain belt, reducing gas, consisting of a heater, a lead frame, a semiconductor chip. Looking at the configuration of the reduced-cure tunnel oven in the lower portion of the metal belt that can withstand more than 500 degrees; A heater (block) for applying a constant temperature heat to the substrate on the upper end of the metal belt; And a reducing gas chamber for dissolving solder to harden the epoxy and curing the epoxy, as well as preventing and reducing copper oxide. Characterized in that consists of.

In addition, the configuration of the reduced-cure tunnel-type oven is a metal belt that can withstand at least 500 degrees to the lead frame or substrate seated on the top of the reducing gas chamber; A lead frame for supplying electricity to and supporting the semiconductor chip at an upper end of the metal belt; And an epoxy or cream solder coated on the top of the lead frame, and may further include a mounted semiconductor chip. The oxidation prevention is prevented through die bonding as it passes through the oven of the reduction cure tunnel method. do.

In addition, a die-bonding apparatus by a unique line, that is, an apparatus for die-bonding a chip doped with epoxy or cream solder, includes: a loader for loading a semiconductor chip which is already doped with epoxy or cream solder on the left front side; A reduction cure tunnel type oven for reducing curing and melting the die located on the front side in the transverse direction from the rear of the loader; And an unloader for unloading the die-bonded chip located in the front portion of the right side of the tunnel type oven. It is characterized by consisting of.

A silicon chip formed with a semiconductor circuit is called a die, which electrically connects its input / output and power terminals with the outside, protects it from moisture and dust, and protects it from mechanical shocks. The process of doing this is called packaging.

Recently, due to the rapid integration and multifunctionality of chips, interest in this field has increased along with the need for more input / output (I / O), faster speed, finer pitch between pins and good thermal characteristics. It is becoming.

In such a package process, a die bonding method using an epoxy resin is widely used as a sealing material. An epoxy die bonding is performed by epoxy doping on a lead frame or a predetermined portion of a substrate, and then mounting a semiconductor chip at an epoxy doped position. It is a method to cure and die-bond to a cure oven.

As described above, since the epoxy resin has a larger coefficient of thermal expansion than silicon, cracking may occur between the pins in contact with each other. Moisture can also seep into the gaps, resulting in corrosion of the bonding pads or connections made of aluminum. There is also a problem of oxidation.

In addition, there is a problem in that it is difficult to control the amount of epoxy is not evenly distributed on the bottom of the chip even worse flatness, there is a problem that voids occur in the epoxy because the chip is mounted on the epoxy dot.

In addition, in order to overcome this problem, in particular, oxidization problem, by heating the bonder rail to melt the wire solder or solder ribbon on the lead frame or a predetermined portion of the substrate, and then attach the semiconductor chip on the melted solder die bonding without a separate cure (cure) Solder bonding method has been used, but there is a problem in productivity because it takes a lot of time.

In addition, Korean Patent Laid-Open Publication No. 1997-8524 discloses a method of manufacturing a semiconductor package, in particular, bonding a heat sink to a semiconductor chip using solder. This conventional technique has a problem in the production speed, which is a problem of the solder bonding method as described above.

The present invention has been made in order to recognize and overcome the problems of the prior art as described above, the present invention provides a reduced-cure tunnel oven in the die-bonding device and the die-bonding method using the same for both die-bonding and epoxy die-bonding By doing so, it is possible to prevent oxidation, which is a problem of die bonding using a conventional epoxy resin, and to prevent oxidation even when working with a cream solder.

In another aspect, the present invention has another object to solve the productivity problem by reducing the time of the solder bonding process, which is a problem of the conventional die bonding method using solder.

In order to achieve the above object, the reduced cure tunnel oven according to the present invention, the lower portion of the metal belt that can withstand more than 500 degrees; A heater (block) for applying a constant temperature heat to the substrate on the upper end of the metal belt; And a reducing gas chamber for dissolving solder to harden the epoxy and curing the epoxy, as well as preventing and reducing copper oxide on the heater. It is characterized by consisting of.

In addition, in the reduction cure tunnel oven, the upper end of the reducing gas chamber is a metal belt that can withstand at least 500 degrees to which the lead frame or substrate can be seated; A lead frame for supplying electricity to and supporting the semiconductor chip at an upper end of the metal belt; And a mounted semiconductor chip having an epoxy or cream solder coated on the lead frame. The die-bonding die is passed through the reduction cure tunnel oven.

In addition, die bonding is possible through the steps of doping epoxy or cream solder, mounting the semiconductor chip, and die bonding in a reduction cure oven, and also reducing the epoxy or cream solder already doped and the semiconductor chip mounted. The unique feature is that die-bonding is possible by the cure tunnel oven device.

In addition, the epoxy and solder die bonding in the same production line can be converted by changing the temperature conditions as necessary, it is characterized by the efficiency of the production equipment.

In addition, a die-bonding apparatus by a unique line, that is, an apparatus for die-bonding a chip doped with epoxy or cream solder, includes: a loader for loading a semiconductor chip which is already doped with epoxy or cream solder on the left front side; A reduction cure tunnel type oven for reducing curing and melting the die located on the front side in the transverse direction from the rear of the loader; And an unloader for unloading the die-bonded chip located in the front portion of the right side of the tunnel type oven. It is characterized by consisting of.

Hereinafter, with reference to the accompanying drawings will be described in more detail to enable a person skilled in the art to practice the present invention solder die bonding and epoxy die bonding combined die bonding apparatus and the same.

1 is a view showing a die bonding method using a conventional epoxy resin. In the conventional die-bonding method using an epoxy resin (S100), a lead frame or a substrate is disposed on a bond rail (S110), and epoxy doping is performed on a predetermined portion of the lead frame or the substrate (S120). After mounting (S130) to cure in the oven oven (S140) is characterized by die bonding. Such a method may be oxidized. In addition, there is a concern in the flatness through the epoxy voids.

2 is a view showing a die bonding method using a conventional solder. In the conventional die bonding method (S200) by placing a lead frame or a substrate on the bonder rail (S210) and heating the bond rail on the lead frame or substrate by melting the wire solder or solder ribbon to a certain portion ( S220) Mounting the semiconductor chip on the melting solder (S230) is characterized in that the die bonding without a separate cure. Such a method has a problem in productivity due to a slow bonding speed.

3 is a diagram illustrating a method (S300) of die bonding in the same line according to the present invention. The present invention is a step of placing the lead frame or the substrate on the bonder rail (S310) and dopting epoxy or cream solder to a predetermined portion of the upper end of the lead frame or the substrate on the rail (S320); Mounting a semiconductor chip on the doped epoxy or cream solder (S330); And die-bonding through the reduction cure tunnel oven (S340); Die-bonding method characterized in that consisting of.

In addition, the reduced cure tunnel oven is characterized in that it can be changed to suit the curing and melting of the epoxy and cream solder by facilitating temperature control, gas amount control and the like.

Conventional solder die bonding is to mount the chip on the melting solder, such as solder die bonding takes a lot of time to bond through heating, while the productivity is reduced, the die bonding method according to the present invention temperature setting in the reduction cure tunnel oven The production speed is rather markedly improved by bonding at the time of heating through control, thereby improving productivity.

In addition, in the case of the conventional die bonding, the epoxy dedicated line and the solder dedicated line must be separately, but in the present invention, it is possible to combine epoxy die bonding and solder die bonding in the same facility by changing the temperature setting conditions, thereby greatly increasing investment and facility efficiency. There is a characteristic that can be obtained.

4 is a view showing an embodiment of die bonding in the same line according to the present invention. According to an embodiment of the die bonding according to the present invention, the lead frame or the substrate 400 is doped with an epoxy resin by the upper nozzle 410 or is doped with a cream solder. After the doped substrate is transferred in a predetermined direction, the semiconductor chip 430 is mounted by the chip mount 420 onto the doped substrate. When the mounted chip and the substrate are aligned through the reduction cure tunnel oven 450, heat is released from the heater at the upper end of the metal belt in the reduction cure tunnel oven, and a mixed gas of hydrogen and nitrogen is ejected from the reduction gas chamber to produce a gas. Sprayed through the ejection openings through which the semiconductor chip and the substrate are thermally bonded. In this case, except that the lead frame or the substrate is sealed except for the left and the right, the oxidation is prevented.

In addition, the reduced cure tunnel oven is able to control the temperature and gas flow rate, it is possible to change depending on the working conditions.

In addition, by placing the die bonding apparatus including the reduction cure tunnel oven in the longitudinal direction, characterized in that to increase the production speed and output.

FIG. 5 is a cross-sectional view of the reducing cure and melting tunnel oven device 450 according to the present invention (part A-A 'in FIG. 4). The lower portion of the reduction cure and melting tunnel oven according to the invention metal belt 510 that can withstand even more than 500 degrees; A heater (block) 520 for applying heat of a predetermined temperature to a substrate at an upper end of the metal belt; And a reducing gas chamber 530 which dissolves the solder on the heater (block) and hardens the epoxy, as well as preventing and reducing copper oxide. Characterized in that consists of.

In addition, the metal belt 510 that can withstand even more than 500 degrees that can be seated on the lead frame or the substrate on the reducing gas chamber; A lead frame 550 for supplying electricity to and supporting the semiconductor chip at an upper end of the metal belt; And a mounted semiconductor chip 570 having an epoxy or cream solder coated on the lead frame. The cream solder 560a is melted and bonded by heat by changing a temperature setting condition. In the case of being bonded by slowly curing through a certain temperature over a certain time is characterized by.

In addition, both sides of the reduction cure and the reducing melting oven form a tunnel to block oxygen.

In addition, the gas outlet and the heater is characterized in that the block is open.

6 is a perspective view of a die bonding apparatus according to the present invention. The die bonding apparatus 600 according to the present invention has a loader 620 for loading a semiconductor chip mounted with an epoxy or cream solder already doped on the left front side during die bonding; A reduction cure tunnel oven (610) for reducing cure and melting the die located in the transverse front from the rear of the loader; And an unloader 630 for unloading the die-bonded chip located at the front of the right side of the tunnel type oven.

In addition, the conveying conveyor 650, which is a metal belt, is attached to the lower portion of the oven of the reduction cure tunnel method to facilitate the transfer of the device. It is characterized by being sealed except for both side portions 640.

Those skilled in the art will understand from the above description that various changes and modifications can be made without departing from the spirit of the present invention.

Therefore, the technical scope of the present invention should not be limited to the contents described in the embodiments, but should be defined by the claims.

As described above, the effect of the present invention is to prevent the oxidation in the epoxy die bonding through the in-line reduction cure oven, to overcome the disadvantages in terms of productivity in solder die bonding, epoxy die bonding and solder die Combined with bonding, it has a great effect on investment and facility utility.

In addition, another effect of the present invention is advantageous in cost reduction through the use of a bear or the like.

Claims (8)

In the die bonding apparatus for manufacturing a semiconductor package, Dotting equipment for epoxy doping or cream solder dotting through the upper nozzle on the lead frame or a predetermined portion of the substrate; A chip mount facility in which a substrate doped on one side of the dotting facility is transferred in a predetermined direction to mount a semiconductor chip; And a metal belt capable of withstanding at least 500 degrees in the lower portion and a heater (block) for applying a constant temperature to the substrate on the upper portion of the metal belt to reduce and cure and melt the semiconductor chip on one side of the mount facility. A reduction cure tunnel oven comprising a reducing gas chamber on the top of the heater (block) to dissolve the solder to cure and to cure the epoxy, as well as to prevent and reduce copper oxidation; Solder die bonding and epoxy die bonding combined die bonding apparatus comprising a The method of claim 1, A metal belt capable of withstanding at least 500 degrees in which a lead frame or a substrate may be mounted on an upper portion of the reducing gas chamber; A lead frame supplying electricity to and supporting the semiconductor chip on the top of the metal belt; And a mounted semiconductor chip having an epoxy or cream solder coated on the lead frame. 2. The method of claim 1, Tunnels on both sides of the reduction cure tunnel oven to block oxygen; Solder die bonding and epoxy die-bonding die-bonding device, characterized in that further comprises In the method of die-bonding using any one of claims 1 to 3, Epoxy doping or cream solder dotting through an upper nozzle on a portion of the leadframe or substrate; Mounting the semiconductor chip after the doped substrate is transferred in a predetermined direction; And the semiconductor chip is transferred into a reduction cure tunnel oven to release heat from a heater at the top of the metal belt, and a mixed gas of hydrogen and nitrogen is ejected from a reducing gas chamber to be injected through a gas outlet, thereby providing a semiconductor chip and a substrate. Curing adhesive bonding and melting; Die bonding method characterized in that The method of claim 4, wherein In the step where the semiconductor chip and the substrate are cured and melt-bonded, the die-bonding method is characterized in that the cream solder is melted and bonded by heat through a temperature setting change. The method of claim 4, wherein In the step of curing and melting the semiconductor chip and the substrate, the die-bonding method characterized in that the epoxy-doped substrate is gradually cured and bonded through a predetermined temperature at a predetermined time by changing the temperature setting. delete delete

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