KR100719639B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR100719639B1
KR100719639B1 KR1020057005900A KR20057005900A KR100719639B1 KR 100719639 B1 KR100719639 B1 KR 100719639B1 KR 1020057005900 A KR1020057005900 A KR 1020057005900A KR 20057005900 A KR20057005900 A KR 20057005900A KR 100719639 B1 KR100719639 B1 KR 100719639B1
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KR
South Korea
Prior art keywords
microwaves
microwave
antennas
antenna
slot
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KR1020057005900A
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English (en)
Korean (ko)
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KR20050050116A (ko
Inventor
시게루 가사이
유키 오사다
다카시 오기노
Original Assignee
동경 엘렉트론 주식회사
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Publication of KR20050050116A publication Critical patent/KR20050050116A/ko
Application granted granted Critical
Publication of KR100719639B1 publication Critical patent/KR100719639B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020057005900A 2002-10-07 2003-10-06 플라즈마 처리 장치 KR100719639B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00293529 2002-10-07
JP2002293529A JP4159845B2 (ja) 2002-10-07 2002-10-07 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20050050116A KR20050050116A (ko) 2005-05-27
KR100719639B1 true KR100719639B1 (ko) 2007-05-17

Family

ID=32064010

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057005900A KR100719639B1 (ko) 2002-10-07 2003-10-06 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP4159845B2 (ja)
KR (1) KR100719639B1 (ja)
CN (2) CN100416772C (ja)
WO (1) WO2004032219A1 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128075A (ja) * 2004-10-01 2006-05-18 Seiko Epson Corp 高周波加熱装置、半導体製造装置および光源装置
JP2007247477A (ja) * 2006-03-15 2007-09-27 Nobuyasu Kondo 排ガス処理装置及び排ガス処理方法
WO2008013112A1 (fr) * 2006-07-28 2008-01-31 Tokyo Electron Limited Source de plasma à micro-ondes et appareil de traitement plasma
JP5162269B2 (ja) * 2008-02-08 2013-03-13 株式会社アルバック 真空処理装置
JP5103223B2 (ja) * 2008-02-27 2012-12-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法
JP5376816B2 (ja) * 2008-03-14 2013-12-25 東京エレクトロン株式会社 マイクロ波導入機構、マイクロ波プラズマ源およびマイクロ波プラズマ処理装置
JP5324137B2 (ja) * 2008-06-11 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
DE112009001422T5 (de) * 2008-06-11 2011-06-01 Tohoku University, Sendai Plasma-Processing-Vorrichtung und Plasma-Vorrichtung-Verfahren
JP5324138B2 (ja) * 2008-06-11 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2010177065A (ja) * 2009-01-30 2010-08-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
JP5893865B2 (ja) 2011-03-31 2016-03-23 東京エレクトロン株式会社 プラズマ処理装置およびマイクロ波導入装置
JP6478748B2 (ja) * 2015-03-24 2019-03-06 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
CN105648523A (zh) * 2016-03-02 2016-06-08 清华大学 等离子体增强原子吸附的化合物半导体的外延生长装置
US10748745B2 (en) * 2016-08-16 2020-08-18 Applied Materials, Inc. Modular microwave plasma source
JP6850645B2 (ja) * 2017-03-22 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置
CN113652674A (zh) * 2021-09-07 2021-11-16 佛山市思博睿科技有限公司 一种基于磁约束等离子体超双疏膜层的制备装置及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000268996A (ja) * 1999-03-12 2000-09-29 Tokyo Electron Ltd 平面アンテナ部材、これを用いたプラズマ処理装置及びプラズマ処理方法
JP2001257098A (ja) * 2000-03-13 2001-09-21 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ生成方法および半導体製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08337887A (ja) * 1995-06-12 1996-12-24 Hitachi Ltd プラズマ処理装置
JPH09102400A (ja) * 1995-07-31 1997-04-15 Hitachi Ltd マイクロ波プラズマを使用するプロセス装置
US5874706A (en) * 1996-09-26 1999-02-23 Tokyo Electron Limited Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field
US6080270A (en) * 1997-07-14 2000-06-27 Lam Research Corporation Compact microwave downstream plasma system
JPH11274874A (ja) * 1998-03-20 1999-10-08 Nec Radio Equipment Eng Ltd 高周波電力増幅装置
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP4598247B2 (ja) * 2000-08-04 2010-12-15 東京エレクトロン株式会社 ラジアルアンテナ及びそれを用いたプラズマ装置
JP3762650B2 (ja) * 2001-03-02 2006-04-05 日本高周波株式会社 プラズマ処理装置用電源システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000268996A (ja) * 1999-03-12 2000-09-29 Tokyo Electron Ltd 平面アンテナ部材、これを用いたプラズマ処理装置及びプラズマ処理方法
JP2001257098A (ja) * 2000-03-13 2001-09-21 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ生成方法および半導体製造方法

Also Published As

Publication number Publication date
CN101320679B (zh) 2010-06-02
CN1692476A (zh) 2005-11-02
CN100416772C (zh) 2008-09-03
JP4159845B2 (ja) 2008-10-01
WO2004032219A1 (ja) 2004-04-15
JP2004128385A (ja) 2004-04-22
KR20050050116A (ko) 2005-05-27
CN101320679A (zh) 2008-12-10

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