CN100416772C - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN100416772C
CN100416772C CNB2003801005746A CN200380100574A CN100416772C CN 100416772 C CN100416772 C CN 100416772C CN B2003801005746 A CNB2003801005746 A CN B2003801005746A CN 200380100574 A CN200380100574 A CN 200380100574A CN 100416772 C CN100416772 C CN 100416772C
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CN
China
Prior art keywords
microwave
antenna
processing apparatus
plasma processing
takes place
Prior art date
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Expired - Lifetime
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CNB2003801005746A
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English (en)
Chinese (zh)
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CN1692476A (zh
Inventor
河西繁
长田勇辉
荻野贵史
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1692476A publication Critical patent/CN1692476A/zh
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Publication of CN100416772C publication Critical patent/CN100416772C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2003801005746A 2002-10-07 2003-10-06 等离子体处理装置 Expired - Lifetime CN100416772C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002293529A JP4159845B2 (ja) 2002-10-07 2002-10-07 プラズマ処理装置
JP293529/2002 2002-10-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2008101376774A Division CN101320679B (zh) 2002-10-07 2003-10-06 等离子体处理装置

Publications (2)

Publication Number Publication Date
CN1692476A CN1692476A (zh) 2005-11-02
CN100416772C true CN100416772C (zh) 2008-09-03

Family

ID=32064010

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2008101376774A Expired - Lifetime CN101320679B (zh) 2002-10-07 2003-10-06 等离子体处理装置
CNB2003801005746A Expired - Lifetime CN100416772C (zh) 2002-10-07 2003-10-06 等离子体处理装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2008101376774A Expired - Lifetime CN101320679B (zh) 2002-10-07 2003-10-06 等离子体处理装置

Country Status (4)

Country Link
JP (1) JP4159845B2 (ja)
KR (1) KR100719639B1 (ja)
CN (2) CN101320679B (ja)
WO (1) WO2004032219A1 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006128075A (ja) * 2004-10-01 2006-05-18 Seiko Epson Corp 高周波加熱装置、半導体製造装置および光源装置
JP2007247477A (ja) * 2006-03-15 2007-09-27 Nobuyasu Kondo 排ガス処理装置及び排ガス処理方法
JP5161086B2 (ja) * 2006-07-28 2013-03-13 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
JP5162269B2 (ja) * 2008-02-08 2013-03-13 株式会社アルバック 真空処理装置
JP5103223B2 (ja) * 2008-02-27 2012-12-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法
JP5376816B2 (ja) * 2008-03-14 2013-12-25 東京エレクトロン株式会社 マイクロ波導入機構、マイクロ波プラズマ源およびマイクロ波プラズマ処理装置
JP5324137B2 (ja) * 2008-06-11 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
DE112009001422T5 (de) * 2008-06-11 2011-06-01 Tohoku University, Sendai Plasma-Processing-Vorrichtung und Plasma-Vorrichtung-Verfahren
JP5324138B2 (ja) * 2008-06-11 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2010177065A (ja) * 2009-01-30 2010-08-12 Tokyo Electron Ltd マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法
JP5893865B2 (ja) 2011-03-31 2016-03-23 東京エレクトロン株式会社 プラズマ処理装置およびマイクロ波導入装置
JP6478748B2 (ja) * 2015-03-24 2019-03-06 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
CN105648523A (zh) * 2016-03-02 2016-06-08 清华大学 等离子体增强原子吸附的化合物半导体的外延生长装置
US10748745B2 (en) * 2016-08-16 2020-08-18 Applied Materials, Inc. Modular microwave plasma source
JP6850645B2 (ja) * 2017-03-22 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置
CN113652674A (zh) * 2021-09-07 2021-11-16 佛山市思博睿科技有限公司 一种基于磁约束等离子体超双疏膜层的制备装置及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08337887A (ja) * 1995-06-12 1996-12-24 Hitachi Ltd プラズマ処理装置
JP2001257098A (ja) * 2000-03-13 2001-09-21 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ生成方法および半導体製造方法
US6325018B1 (en) * 1999-03-12 2001-12-04 Tokyo Electron Limited Flat antenna having openings provided with conductive materials accommodated therein and plasma processing apparatus using the flat antenna
JP2002260899A (ja) * 2001-03-02 2002-09-13 Nihon Koshuha Co Ltd プラズマ処理装置用電源システム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09102400A (ja) * 1995-07-31 1997-04-15 Hitachi Ltd マイクロ波プラズマを使用するプロセス装置
US5874706A (en) * 1996-09-26 1999-02-23 Tokyo Electron Limited Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field
US6080270A (en) * 1997-07-14 2000-06-27 Lam Research Corporation Compact microwave downstream plasma system
JPH11274874A (ja) * 1998-03-20 1999-10-08 Nec Radio Equipment Eng Ltd 高周波電力増幅装置
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP4598247B2 (ja) * 2000-08-04 2010-12-15 東京エレクトロン株式会社 ラジアルアンテナ及びそれを用いたプラズマ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08337887A (ja) * 1995-06-12 1996-12-24 Hitachi Ltd プラズマ処理装置
US6325018B1 (en) * 1999-03-12 2001-12-04 Tokyo Electron Limited Flat antenna having openings provided with conductive materials accommodated therein and plasma processing apparatus using the flat antenna
JP2001257098A (ja) * 2000-03-13 2001-09-21 Mitsubishi Heavy Ind Ltd 放電電極への給電方法、高周波プラズマ生成方法および半導体製造方法
JP2002260899A (ja) * 2001-03-02 2002-09-13 Nihon Koshuha Co Ltd プラズマ処理装置用電源システム

Also Published As

Publication number Publication date
CN101320679B (zh) 2010-06-02
JP2004128385A (ja) 2004-04-22
JP4159845B2 (ja) 2008-10-01
KR20050050116A (ko) 2005-05-27
CN1692476A (zh) 2005-11-02
KR100719639B1 (ko) 2007-05-17
CN101320679A (zh) 2008-12-10
WO2004032219A1 (ja) 2004-04-15

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Granted publication date: 20080903