KR100715054B1 - 진공 처리 장치 - Google Patents

진공 처리 장치 Download PDF

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Publication number
KR100715054B1
KR100715054B1 KR1020057015823A KR20057015823A KR100715054B1 KR 100715054 B1 KR100715054 B1 KR 100715054B1 KR 1020057015823 A KR1020057015823 A KR 1020057015823A KR 20057015823 A KR20057015823 A KR 20057015823A KR 100715054 B1 KR100715054 B1 KR 100715054B1
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South Korea
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processing
space
purge gas
unit
partition
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20050105249A (ko
Inventor
시게루 가사이
수수무 가토
도모히토 고마츠
데츠야 사이토
스미 다나카
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동경 엘렉트론 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020057015823A 2003-02-26 2004-02-12 진공 처리 장치 Expired - Fee Related KR100715054B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00049632 2003-02-26
JP2003049632A JP4251887B2 (ja) 2003-02-26 2003-02-26 真空処理装置

Publications (2)

Publication Number Publication Date
KR20050105249A KR20050105249A (ko) 2005-11-03
KR100715054B1 true KR100715054B1 (ko) 2007-05-07

Family

ID=32923314

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057015823A Expired - Fee Related KR100715054B1 (ko) 2003-02-26 2004-02-12 진공 처리 장치

Country Status (5)

Country Link
US (1) US20060160359A1 (enExample)
JP (1) JP4251887B2 (enExample)
KR (1) KR100715054B1 (enExample)
CN (1) CN1742113B (enExample)
WO (1) WO2004076715A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452318B1 (ko) * 2012-06-29 2014-10-22 세메스 주식회사 기판 처리 장치 및 방법

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0106410D0 (en) 2001-03-15 2001-05-02 Ucb Sa Labels
JP4597894B2 (ja) * 2006-03-31 2010-12-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP5105396B2 (ja) * 2006-04-12 2012-12-26 東京応化工業株式会社 加熱処理装置
JP4913695B2 (ja) * 2007-09-20 2012-04-11 東京エレクトロン株式会社 基板処理装置及びそれに用いる基板載置台
JP5171969B2 (ja) * 2011-01-13 2013-03-27 東京エレクトロン株式会社 基板処理装置
JP5832173B2 (ja) * 2011-07-11 2015-12-16 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
KR101804128B1 (ko) * 2011-12-26 2017-12-05 주식회사 원익아이피에스 기판처리장치
KR20130086806A (ko) * 2012-01-26 2013-08-05 삼성전자주식회사 박막 증착 장치
KR102217790B1 (ko) 2012-09-26 2021-02-18 어플라이드 머티어리얼스, 인코포레이티드 기체 화합물들을 퍼징하기 위한 장치 및 방법
JP6107327B2 (ja) * 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
DE102013020106A1 (de) * 2013-12-06 2015-06-11 Oliver Feddersen-Clausen Reaktionskammer insbesondere für Atomic Laver Deposition
CN106367731A (zh) * 2015-07-20 2017-02-01 广东昭信半导体装备制造有限公司 一种氧化物化学气相沉积装置和方法
US10607817B2 (en) 2016-11-18 2020-03-31 Applied Materials, Inc. Thermal repeatability and in-situ showerhead temperature monitoring
JP6863041B2 (ja) * 2017-04-21 2021-04-21 東京エレクトロン株式会社 基板加熱装置
US10923375B2 (en) * 2018-11-28 2021-02-16 Brooks Automation, Inc. Load port module
CN111968901B (zh) * 2020-08-25 2022-08-16 北京北方华创微电子装备有限公司 半导体反应腔室及半导体加工设备
JP7102478B2 (ja) 2020-09-24 2022-07-19 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、プログラム及び基板処理方法
US12365985B2 (en) * 2020-12-03 2025-07-22 Tokyo Electron Limited Deposition apparatus with pressure sensor and shower head on same plane and deposition method
KR102621848B1 (ko) * 2020-12-18 2024-01-09 세메스 주식회사 지지 유닛 및 기판 처리 장치
JP7317083B2 (ja) 2021-09-01 2023-07-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
JP7641258B2 (ja) * 2022-09-14 2025-03-06 株式会社Kokusai Electric 基板処理装置、クリーニング方法、半導体装置の製造方法及びプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778766A (ja) * 1993-06-24 1995-03-20 Tokyo Electron Ltd ガス処理装置
JPH07153706A (ja) * 1993-05-27 1995-06-16 Applied Materials Inc サセプタ装置

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US5592581A (en) * 1993-07-19 1997-01-07 Tokyo Electron Kabushiki Kaisha Heat treatment apparatus
JPH09506744A (ja) * 1993-12-17 1997-06-30 ブルックス オートメーション インコーポレイテッド ウェハの加熱冷却装置
US5849076A (en) * 1996-07-26 1998-12-15 Memc Electronic Materials, Inc. Cooling system and method for epitaxial barrel reactor
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
JP2001053030A (ja) * 1999-08-11 2001-02-23 Tokyo Electron Ltd 成膜装置
JP4592856B2 (ja) * 1999-12-24 2010-12-08 東京エレクトロン株式会社 バッフル板及びガス処理装置
KR100881786B1 (ko) * 2000-12-27 2009-02-03 도쿄엘렉트론가부시키가이샤 처리 장치
JP4009100B2 (ja) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 基板加熱装置および基板加熱方法
KR100641762B1 (ko) * 2001-12-07 2006-11-06 동경 엘렉트론 주식회사 절연막의 질화 방법, 반도체 장치 및 반도체 장치의 제조방법, 기판 처리 장치 및 기판 처리 방법
JP2003253449A (ja) * 2002-02-27 2003-09-10 Sumitomo Electric Ind Ltd 半導体／液晶製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153706A (ja) * 1993-05-27 1995-06-16 Applied Materials Inc サセプタ装置
JPH0778766A (ja) * 1993-06-24 1995-03-20 Tokyo Electron Ltd ガス処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452318B1 (ko) * 2012-06-29 2014-10-22 세메스 주식회사 기판 처리 장치 및 방법

Also Published As

Publication number Publication date
KR20050105249A (ko) 2005-11-03
CN1742113B (zh) 2010-05-05
CN1742113A (zh) 2006-03-01
JP4251887B2 (ja) 2009-04-08
US20060160359A1 (en) 2006-07-20
WO2004076715A1 (ja) 2004-09-10
JP2004263209A (ja) 2004-09-24

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