KR100695582B1 - 기판 제조 공정의 엔드포인트 검출 방법 및 장치 - Google Patents

기판 제조 공정의 엔드포인트 검출 방법 및 장치 Download PDF

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Publication number
KR100695582B1
KR100695582B1 KR1020017000422A KR20017000422A KR100695582B1 KR 100695582 B1 KR100695582 B1 KR 100695582B1 KR 1020017000422 A KR1020017000422 A KR 1020017000422A KR 20017000422 A KR20017000422 A KR 20017000422A KR 100695582 B1 KR100695582 B1 KR 100695582B1
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South Korea
Prior art keywords
controller
endpoint
signal
processing chamber
substrate
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Expired - Fee Related
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KR1020017000422A
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English (en)
Korean (ko)
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KR20010083104A (ko
Inventor
지펭 슈이
파울 이. 루스체르
닐스 조한슨
마이클 디. 웰치
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20010083104A publication Critical patent/KR20010083104A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020017000422A 1998-07-10 1999-07-09 기판 제조 공정의 엔드포인트 검출 방법 및 장치 Expired - Fee Related KR100695582B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9242698P 1998-07-10 1998-07-10
US60/092,426 1998-07-10
US35005299A 1999-07-08 1999-07-08
US09/350,052 1999-07-08

Publications (2)

Publication Number Publication Date
KR20010083104A KR20010083104A (ko) 2001-08-31
KR100695582B1 true KR100695582B1 (ko) 2007-03-14

Family

ID=26785660

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017000422A Expired - Fee Related KR100695582B1 (ko) 1998-07-10 1999-07-09 기판 제조 공정의 엔드포인트 검출 방법 및 장치

Country Status (3)

Country Link
JP (1) JP2003521807A (enExample)
KR (1) KR100695582B1 (enExample)
WO (1) WO2000003421A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101307247B1 (ko) * 2012-09-26 2013-09-11 가톨릭대학교 산학협력단 보상구조물을 이용한 실리콘웨이퍼 에칭 방법 및 이를 이용한 에너지 하베스터 제조 방법

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP5789353B2 (ja) 2000-09-20 2015-10-07 ケーエルエー−テンカー コーポレイション 半導体製造プロセスのための方法とシステム
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
TW529085B (en) * 2000-09-22 2003-04-21 Alps Electric Co Ltd Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system
DE60305684T2 (de) * 2002-04-23 2007-05-03 Tokyo Electron Ltd. Verfahren und vorrichtung zur vereinfachten systemkonfiguration
US6825050B2 (en) 2002-06-07 2004-11-30 Lam Research Corporation Integrated stepwise statistical process control in a plasma processing system
JP3959318B2 (ja) 2002-08-22 2007-08-15 東京エレクトロン株式会社 プラズマリーク監視方法，プラズマ処理装置，プラズマ処理方法，およびコンピュータプログラム
US20060275931A1 (en) * 2005-05-20 2006-12-07 Asm Japan K.K. Technology of detecting abnormal operation of plasma process
US7638441B2 (en) 2007-09-11 2009-12-29 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
US9978621B1 (en) 2016-11-14 2018-05-22 Applied Materials, Inc. Selective etch rate monitor
TWI755448B (zh) * 2016-11-30 2022-02-21 美商應用材料股份有限公司 使用神經網路的光譜監測
US10896833B2 (en) * 2018-05-09 2021-01-19 Applied Materials, Inc. Methods and apparatus for detecting an endpoint of a seasoning process
US11670154B2 (en) * 2020-10-06 2023-06-06 Nanya Technology Corporation System and method for controlling semiconductor manufacturing apparatus
CN115537784B (zh) * 2022-10-19 2024-07-23 北京北方华创真空技术有限公司 一种用于化学气相沉积设备的控制方法和系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139926A (ja) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp 自動終点検出装置
US5160402A (en) * 1990-05-24 1992-11-03 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection method
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
JPH07169741A (ja) * 1993-12-14 1995-07-04 Hitachi Ltd プラズマエッチング終点検出方法およびプラズマエッチング装置
JPH07335621A (ja) * 1994-06-10 1995-12-22 Sony Corp プラズマエッチング装置およびプラズマエッチング方法
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101307247B1 (ko) * 2012-09-26 2013-09-11 가톨릭대학교 산학협력단 보상구조물을 이용한 실리콘웨이퍼 에칭 방법 및 이를 이용한 에너지 하베스터 제조 방법

Also Published As

Publication number Publication date
KR20010083104A (ko) 2001-08-31
WO2000003421A3 (en) 2001-05-31
WO2000003421A2 (en) 2000-01-20
WO2000003421A8 (en) 2001-09-20
WO2000003421A9 (en) 2000-07-20
JP2003521807A (ja) 2003-07-15

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