JP2003521807A - 基板製作工程に関する改良された終点検出 - Google Patents

基板製作工程に関する改良された終点検出

Info

Publication number
JP2003521807A
JP2003521807A JP2000559582A JP2000559582A JP2003521807A JP 2003521807 A JP2003521807 A JP 2003521807A JP 2000559582 A JP2000559582 A JP 2000559582A JP 2000559582 A JP2000559582 A JP 2000559582A JP 2003521807 A JP2003521807 A JP 2003521807A
Authority
JP
Japan
Prior art keywords
processing
controller
substrate
signal
server
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000559582A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003521807A5 (enExample
Inventor
ツィーフェン スイ
ポール イー ルーシャー
ニルス ジョハンソン
マイケル ディー ウェルチ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2003521807A publication Critical patent/JP2003521807A/ja
Publication of JP2003521807A5 publication Critical patent/JP2003521807A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2000559582A 1998-07-10 1999-07-09 基板製作工程に関する改良された終点検出 Pending JP2003521807A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9242698P 1998-07-10 1998-07-10
US60/092,426 1998-07-10
US35005299A 1999-07-08 1999-07-08
US09/350052 1999-07-09
PCT/US1999/015648 WO2000003421A2 (en) 1998-07-10 1999-07-09 Improved endpoint detection for substrate fabrication processes

Publications (2)

Publication Number Publication Date
JP2003521807A true JP2003521807A (ja) 2003-07-15
JP2003521807A5 JP2003521807A5 (enExample) 2006-08-31

Family

ID=26785660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000559582A Pending JP2003521807A (ja) 1998-07-10 1999-07-09 基板製作工程に関する改良された終点検出

Country Status (3)

Country Link
JP (1) JP2003521807A (enExample)
KR (1) KR100695582B1 (enExample)
WO (1) WO2000003421A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332658A (ja) * 2005-05-20 2006-12-07 Asm Japan Kk プラズマ処理の異常動作を検知するための方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US7349090B2 (en) 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP5789353B2 (ja) 2000-09-20 2015-10-07 ケーエルエー−テンカー コーポレイション 半導体製造プロセスのための方法とシステム
US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
TW529085B (en) * 2000-09-22 2003-04-21 Alps Electric Co Ltd Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system
DE60305684T2 (de) * 2002-04-23 2007-05-03 Tokyo Electron Ltd. Verfahren und vorrichtung zur vereinfachten systemkonfiguration
US6825050B2 (en) 2002-06-07 2004-11-30 Lam Research Corporation Integrated stepwise statistical process control in a plasma processing system
JP3959318B2 (ja) 2002-08-22 2007-08-15 東京エレクトロン株式会社 プラズマリーク監視方法，プラズマ処理装置，プラズマ処理方法，およびコンピュータプログラム
US7638441B2 (en) 2007-09-11 2009-12-29 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
KR101307247B1 (ko) * 2012-09-26 2013-09-11 가톨릭대학교 산학협력단 보상구조물을 이용한 실리콘웨이퍼 에칭 방법 및 이를 이용한 에너지 하베스터 제조 방법
US9978621B1 (en) 2016-11-14 2018-05-22 Applied Materials, Inc. Selective etch rate monitor
TWI755448B (zh) * 2016-11-30 2022-02-21 美商應用材料股份有限公司 使用神經網路的光譜監測
US10896833B2 (en) * 2018-05-09 2021-01-19 Applied Materials, Inc. Methods and apparatus for detecting an endpoint of a seasoning process
US11670154B2 (en) * 2020-10-06 2023-06-06 Nanya Technology Corporation System and method for controlling semiconductor manufacturing apparatus
CN115537784B (zh) * 2022-10-19 2024-07-23 北京北方华创真空技术有限公司 一种用于化学气相沉积设备的控制方法和系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139926A (ja) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp 自動終点検出装置
JPH07169741A (ja) * 1993-12-14 1995-07-04 Hitachi Ltd プラズマエッチング終点検出方法およびプラズマエッチング装置
JPH07335621A (ja) * 1994-06-10 1995-12-22 Sony Corp プラズマエッチング装置およびプラズマエッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160402A (en) * 1990-05-24 1992-11-03 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection method
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139926A (ja) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp 自動終点検出装置
JPH07169741A (ja) * 1993-12-14 1995-07-04 Hitachi Ltd プラズマエッチング終点検出方法およびプラズマエッチング装置
JPH07335621A (ja) * 1994-06-10 1995-12-22 Sony Corp プラズマエッチング装置およびプラズマエッチング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332658A (ja) * 2005-05-20 2006-12-07 Asm Japan Kk プラズマ処理の異常動作を検知するための方法

Also Published As

Publication number Publication date
KR20010083104A (ko) 2001-08-31
WO2000003421A3 (en) 2001-05-31
WO2000003421A2 (en) 2000-01-20
WO2000003421A8 (en) 2001-09-20
WO2000003421A9 (en) 2000-07-20
KR100695582B1 (ko) 2007-03-14

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