KR100687079B1 - 바이폴라 ｍｏｓｆｅｔ 디바이스 - Google Patents

바이폴라 ｍｏｓｆｅｔ 디바이스 Download PDF

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Publication number
KR100687079B1
KR100687079B1 KR1020027002998A KR20027002998A KR100687079B1 KR 100687079 B1 KR100687079 B1 KR 100687079B1 KR 1020027002998 A KR1020027002998 A KR 1020027002998A KR 20027002998 A KR20027002998 A KR 20027002998A KR 100687079 B1 KR100687079 B1 KR 100687079B1
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South Korea
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well
well region
gate
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Korean (ko)
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KR20020032567A (ko
Inventor
마다딜산카라나라야난엑카나드
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드 몬포트 유니버시티
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 

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  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020027002998A 1999-09-08 2000-09-07 바이폴라 ｍｏｓｆｅｔ 디바이스 Expired - Fee Related KR100687079B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9921068.4A GB9921068D0 (en) 1999-09-08 1999-09-08 Bipolar mosfet device
GB9921068.4 1999-09-08

Publications (2)

Publication Number Publication Date
KR20020032567A KR20020032567A (ko) 2002-05-03
KR100687079B1 true KR100687079B1 (ko) 2007-02-27

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KR1020027002998A Expired - Fee Related KR100687079B1 (ko) 1999-09-08 2000-09-07 바이폴라 ｍｏｓｆｅｔ 디바이스

Country Status (12)

Country Link
US (1) US6724043B1 (enExample)
EP (1) EP1269546B1 (enExample)
JP (1) JP5357370B2 (enExample)
KR (1) KR100687079B1 (enExample)
CN (1) CN1227744C (enExample)
AT (1) ATE500618T1 (enExample)
AU (1) AU781099B2 (enExample)
CA (1) CA2381530C (enExample)
DE (1) DE60045692D1 (enExample)
DK (1) DK1269546T3 (enExample)
GB (1) GB9921068D0 (enExample)
WO (1) WO2001018876A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101352766B1 (ko) 2011-12-08 2014-01-15 서강대학교산학협력단 엔모스를 삽입한 수평형 절연게이트 바이폴라트랜지스터 소자

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KR100830982B1 (ko) 2004-05-12 2008-05-20 도요다 지도샤 가부시끼가이샤 Ｉｇｂｔ
GB0417749D0 (en) * 2004-08-10 2004-09-08 Eco Semiconductors Ltd Improved bipolar MOSFET devices and methods for their use
GB0520909D0 (en) * 2005-10-14 2005-11-23 Eco Semiconductors Ltd Power semiconductor devices
US7582917B2 (en) * 2006-03-10 2009-09-01 Bae Systems Information And Electronic Systems Integration Inc. Monolithically integrated light-activated thyristor and method
JP4087416B2 (ja) * 2006-04-06 2008-05-21 シャープ株式会社 パワーｉｃデバイス及びその製造方法
KR100880231B1 (ko) * 2007-06-20 2009-01-28 주식회사 동부하이텍 반도체 소자 및 그의 제조 방법
US7700977B2 (en) * 2007-06-21 2010-04-20 Intersil Americas Inc. Integrated circuit with a subsurface diode
US20110182094A1 (en) * 2007-08-13 2011-07-28 The Powerwise Group, Inc. System and method to manage power usage
US8619443B2 (en) 2010-09-29 2013-12-31 The Powerwise Group, Inc. System and method to boost voltage
US8085009B2 (en) 2007-08-13 2011-12-27 The Powerwise Group, Inc. IGBT/FET-based energy savings device for reducing a predetermined amount of voltage using pulse width modulation
US8120307B2 (en) 2007-08-24 2012-02-21 The Powerwise Group, Inc. System and method for providing constant loading in AC power applications
US8698447B2 (en) 2007-09-14 2014-04-15 The Powerwise Group, Inc. Energy saving system and method for devices with rotating or reciprocating masses
US8810190B2 (en) * 2007-09-14 2014-08-19 The Powerwise Group, Inc. Motor controller system and method for maximizing energy savings
US9620614B2 (en) * 2007-12-31 2017-04-11 Alpha And Omega Semiconductor Incorporated Sawtooth electric field drift region structure for power semiconductor devices
US8558275B2 (en) * 2007-12-31 2013-10-15 Alpha And Omega Semiconductor Ltd Sawtooth electric field drift region structure for power semiconductor devices
US8004255B2 (en) * 2008-08-07 2011-08-23 The Powerwise Group, Inc. Power supply for IGBT/FET drivers
US8698446B2 (en) 2009-09-08 2014-04-15 The Powerwise Group, Inc. Method to save energy for devices with rotating or reciprocating masses
EA021950B1 (ru) 2009-09-08 2015-10-30 Дзе Пауэрвайз Груп, Инк. Система и способ сбережения энергии для устройств с вращающимися или выполняющими возвратно-поступательное движение массами
US9257525B2 (en) * 2011-05-13 2016-02-09 Intersil Americas LLC Systems and methods for forming isolated devices in a handle wafer
CN102956687A (zh) * 2012-10-30 2013-03-06 浙江大学 一种基于双沟道结构的soi-ligbt器件
GB201313126D0 (en) * 2013-07-23 2013-09-04 Eco Semiconductors Ltd MOS-Bipolar Device
US9293559B2 (en) 2013-07-31 2016-03-22 Alpha And Omega Semiconductor Incorporated Dual trench-gate IGBT structure
CN104576365B (zh) * 2013-10-25 2017-11-21 无锡华润上华科技有限公司 cluster‑IGBT的制备方法
US9123770B2 (en) 2013-11-18 2015-09-01 Alpha And Omega Semiconductor Incorporated Charge reservoir IGBT top structure
US20150179794A1 (en) * 2013-12-24 2015-06-25 Hyundai Motor Company Semiconductor device and method of manufacturing the same
CN106711204B (zh) * 2015-11-12 2021-01-22 上海联星电子有限公司 Igbt器件及其制作方法
CN108022972B (zh) * 2016-11-02 2021-07-23 全球能源互联网研究院 一种低通态压降igbt及其控制方法、制造方法
TWI659539B (zh) * 2018-06-28 2019-05-11 立錡科技股份有限公司 高壓元件及其製造方法
CN110504314B (zh) * 2019-08-30 2023-03-03 电子科技大学 一种沟槽型绝缘栅双极晶体管及其制备方法
CN110459597B (zh) * 2019-08-30 2023-02-07 电子科技大学 一种沟槽型绝缘栅双极晶体管及其制备方法
CN111933687B (zh) * 2020-07-07 2023-04-18 电子科技大学 具有高安全工作区的横向功率器件
CN111933718A (zh) * 2020-09-11 2020-11-13 深圳市鸿泰集成电路技术有限公司 一种新型低电容tvs结构及其制作方法
GB2606383A (en) 2021-05-06 2022-11-09 Eco Semiconductors Ltd A semiconductor device
CN113314588B (zh) * 2021-05-12 2025-04-08 上海睿驱微电子科技有限公司 一种具有高抗闩锁能力的iegt器件
CN118284976A (zh) * 2021-09-29 2024-07-02 美国德州系统大学评议委员会 电导率受控的功率半导体器件
US20230369475A1 (en) * 2022-05-13 2023-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Insulated-gate bipolar transistor (igbt) device with 3d isolation
CN120224710A (zh) * 2025-05-28 2025-06-27 深圳平湖实验室 半导体器件及其制备方法

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DE4121375A1 (de) 1991-06-28 1993-01-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung
JP3163677B2 (ja) * 1991-09-24 2001-05-08 富士電機株式会社 Ｍｉｓｆｅｔ制御型サイリスタを有する半導体装置
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
US5493134A (en) * 1994-11-14 1996-02-20 North Carolina State University Bidirectional AC switching device with MOS-gated turn-on and turn-off control
DE69527721T2 (de) * 1995-05-11 2003-04-24 Fuji Electric Co., Ltd. Emitter-geschalteter thyristor
JP3200328B2 (ja) * 1995-06-27 2001-08-20 株式会社日立製作所 複合半導体装置
KR0175276B1 (ko) * 1996-01-26 1999-02-01 김광호 전력반도체장치 및 그의 제조방법
DE19710487A1 (de) * 1996-03-13 1997-09-18 Toshiba Kawasaki Kk Halbleitervorrichtung
DE19638769C1 (de) * 1996-09-21 1998-03-05 Daimler Benz Ag Emittergesteuerter Thyristor
JP3692684B2 (ja) * 1997-02-17 2005-09-07 株式会社デンソー 絶縁ゲート型電界効果トランジスタ及びその製造方法
JP4761011B2 (ja) * 1999-05-26 2011-08-31 株式会社豊田中央研究所 サイリスタを有する半導体装置及びその製造方法
JP2001177091A (ja) * 1999-12-07 2001-06-29 Analog & Power Electronics Corp ラッチ制御可能な絶縁ゲートバイポーラトランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101352766B1 (ko) 2011-12-08 2014-01-15 서강대학교산학협력단 엔모스를 삽입한 수평형 절연게이트 바이폴라트랜지스터 소자

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Publication number Publication date
KR20020032567A (ko) 2002-05-03
CA2381530C (en) 2012-07-10
EP1269546B1 (en) 2011-03-02
GB9921068D0 (en) 1999-11-10
ATE500618T1 (de) 2011-03-15
DE60045692D1 (de) 2011-04-14
CA2381530A1 (en) 2001-03-15
DK1269546T3 (da) 2011-06-27
WO2001018876A1 (en) 2001-03-15
US6724043B1 (en) 2004-04-20
JP2003509849A (ja) 2003-03-11
AU781099B2 (en) 2005-05-05
JP5357370B2 (ja) 2013-12-04
CN1373905A (zh) 2002-10-09
AU7024400A (en) 2001-04-10
CN1227744C (zh) 2005-11-16
EP1269546A1 (en) 2003-01-02

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