KR100679549B1 - 고주파 전력증폭기 모듈 및 무선통신장치 - Google Patents

고주파 전력증폭기 모듈 및 무선통신장치 Download PDF

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Publication number
KR100679549B1
KR100679549B1 KR1020000052139A KR20000052139A KR100679549B1 KR 100679549 B1 KR100679549 B1 KR 100679549B1 KR 1020000052139 A KR1020000052139 A KR 1020000052139A KR 20000052139 A KR20000052139 A KR 20000052139A KR 100679549 B1 KR100679549 B1 KR 100679549B1
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South Korea
Prior art keywords
semiconductor
terminal
control terminal
bias
control
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Korean (ko)
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KR20010050332A (ko
Inventor
후지오카토루
마츠나가요시쿠니
요시다이사오
모리카와마사토시
홋타마사오
아다치테츠아키
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
히타치 토부 세미콘덕터 가부시키가이샤
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Publication of KR20010050332A publication Critical patent/KR20010050332A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/16—Circuits
    • H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Transmitters (AREA)
KR1020000052139A 1999-09-29 2000-09-04 고주파 전력증폭기 모듈 및 무선통신장치 Expired - Lifetime KR100679549B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99-275465 1999-09-29
JP27546599A JP3798198B2 (ja) 1999-09-29 1999-09-29 高周波電力増幅モジュールおよび無線通信装置

Publications (2)

Publication Number Publication Date
KR20010050332A KR20010050332A (ko) 2001-06-15
KR100679549B1 true KR100679549B1 (ko) 2007-02-07

Family

ID=17555927

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000052139A Expired - Lifetime KR100679549B1 (ko) 1999-09-29 2000-09-04 고주파 전력증폭기 모듈 및 무선통신장치

Country Status (4)

Country Link
US (1) US6492872B1 (enExample)
JP (1) JP3798198B2 (enExample)
KR (1) KR100679549B1 (enExample)
TW (1) TW548894B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094094A (ja) 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
US6917245B2 (en) * 2000-09-12 2005-07-12 Silicon Laboratories, Inc. Absolute power detector
JP2002111415A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 高周波電力増幅装置及び無線通信機
JP2002164441A (ja) * 2000-11-27 2002-06-07 Matsushita Electric Ind Co Ltd 高周波スイッチ回路装置
JP3942007B2 (ja) 2001-06-29 2007-07-11 株式会社ルネサステクノロジ 高周波電力増幅回路
US6828859B2 (en) * 2001-08-17 2004-12-07 Silicon Laboratories, Inc. Method and apparatus for protecting devices in an RF power amplifier
US20030058045A1 (en) * 2001-09-25 2003-03-27 Taylor Stewart Sidney Power control in RF amplifiers
US6803824B2 (en) * 2001-12-18 2004-10-12 Anadigics, Inc. Dynamic matching in cascode circuits
US6952136B2 (en) * 2002-08-28 2005-10-04 Broadcom Corporation System to reduce unwanted oscillations in high speed, high gain or transimpedance amplifiers
CN1639968A (zh) * 2002-09-05 2005-07-13 株式会社瑞萨科技 用于放大高频的电子组件和射频通讯系统
JP2004140518A (ja) * 2002-10-16 2004-05-13 Renesas Technology Corp 高周波電力増幅用電子部品および無線通信システム
JP2004140633A (ja) * 2002-10-18 2004-05-13 Hitachi Ltd 高周波電力増幅用電子部品および無線通信システム
US6943720B2 (en) * 2002-11-28 2005-09-13 Sanyo Electric Co., Ltd. Current control method and application thereof
US6894565B1 (en) 2002-12-03 2005-05-17 Silicon Laboratories, Inc. Fast settling power amplifier regulator
US6897730B2 (en) * 2003-03-04 2005-05-24 Silicon Laboratories Inc. Method and apparatus for controlling the output power of a power amplifier
JP3839421B2 (ja) 2003-07-03 2006-11-01 松下電器産業株式会社 高周波増幅回路およびそれを用いた移動体通信端末
US7421254B2 (en) * 2003-10-23 2008-09-02 Broadcom Corporation High linearity, high efficiency power amplifier with DSP assisted linearity optimization
US7340229B2 (en) * 2004-08-20 2008-03-04 Matsushita Electric Industrial Co., Ltd. High frequency amplification circuit and mobile communication terminal using the same
US7340228B2 (en) * 2005-07-08 2008-03-04 Samsung Electronics Co., Ltd. Apparatus and method for high efficiency RF power amplification using drain bias adaptation
JP4892253B2 (ja) * 2006-02-28 2012-03-07 ルネサスエレクトロニクス株式会社 電子装置
JP5200853B2 (ja) * 2008-10-24 2013-06-05 株式会社村田製作所 高周波電力増幅用電子部品
JP5299093B2 (ja) 2009-05-29 2013-09-25 株式会社村田製作所 バイアス回路、ハイパワーアンプ及び携帯情報端末
US9118366B2 (en) * 2012-09-12 2015-08-25 Mediatek Singapore Pte. Ltd. Method and apparatus for calibrating an envelope tracking system
JP6502623B2 (ja) * 2014-06-10 2019-04-17 新日本無線株式会社 高周波増幅器
CN111106805B (zh) 2018-10-26 2023-06-13 株式会社村田制作所 功率放大模块
US20240039481A1 (en) * 2020-10-06 2024-02-01 Sumitomo Electric Device Innovations, Inc. Amplifier

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5220290A (en) 1991-06-03 1993-06-15 Motorola, Inc. Power amplifier
US5245297A (en) 1991-03-11 1993-09-14 U.S. Philips Corporation Power amplifier and transmitter with improved ramping
JPH05300029A (ja) * 1992-04-21 1993-11-12 Kokusai Electric Co Ltd 自動送信電力制御回路の電力増幅器バイアス回路
KR100423854B1 (ko) 1995-04-27 2004-10-28 소니 가부시끼 가이샤 고주파증폭기,송신장치및수신장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794975A (ja) 1993-08-30 1995-04-07 Toshiba Corp 高周波ｈｉｃモジュール
US5455968A (en) * 1993-10-04 1995-10-03 Motorola, Inc. Variable power amplifier
GB2319918B (en) * 1996-12-02 2001-04-04 Nokia Mobile Phones Ltd Amplifier system
JP3105489B2 (ja) * 1998-04-16 2000-10-30 松下電器産業株式会社 増幅器
US6172567B1 (en) * 1998-08-31 2001-01-09 Hitachi, Ltd. Radio communication apparatus and radio frequency power amplifier
US6271727B1 (en) * 1999-08-06 2001-08-07 Rf Micro Devices, Inc. High isolation RF power amplifier with self-bias attenuator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245297A (en) 1991-03-11 1993-09-14 U.S. Philips Corporation Power amplifier and transmitter with improved ramping
US5220290A (en) 1991-06-03 1993-06-15 Motorola, Inc. Power amplifier
JPH05300029A (ja) * 1992-04-21 1993-11-12 Kokusai Electric Co Ltd 自動送信電力制御回路の電力増幅器バイアス回路
KR100423854B1 (ko) 1995-04-27 2004-10-28 소니 가부시끼 가이샤 고주파증폭기,송신장치및수신장치

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP조사보고서

Also Published As

Publication number Publication date
JP2001102881A (ja) 2001-04-13
US6492872B1 (en) 2002-12-10
TW548894B (en) 2003-08-21
KR20010050332A (ko) 2001-06-15
JP3798198B2 (ja) 2006-07-19

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