KR100666906B1 - 고내열성 알루미늄 합금 배선 재료 및 타겟재 - Google Patents

고내열성 알루미늄 합금 배선 재료 및 타겟재 Download PDF

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Publication number
KR100666906B1
KR100666906B1 KR1020057019424A KR20057019424A KR100666906B1 KR 100666906 B1 KR100666906 B1 KR 100666906B1 KR 1020057019424 A KR1020057019424 A KR 1020057019424A KR 20057019424 A KR20057019424 A KR 20057019424A KR 100666906 B1 KR100666906 B1 KR 100666906B1
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KR
South Korea
Prior art keywords
aluminum alloy
wiring material
cobalt
content
alloy wiring
Prior art date
Application number
KR1020057019424A
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English (en)
Korean (ko)
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KR20060002987A (ko
Inventor
다카시 구보타
요시노리 마츠우라
겐지 마츠자키
가즈테루 가토
Original Assignee
미쓰이 긴조꾸 고교 가부시키가이샤
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Publication of KR20060002987A publication Critical patent/KR20060002987A/ko
Application granted granted Critical
Publication of KR100666906B1 publication Critical patent/KR100666906B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Thin Film Transistor (AREA)
  • Conductive Materials (AREA)
  • Liquid Crystal (AREA)
KR1020057019424A 2004-02-16 2005-02-15 고내열성 알루미늄 합금 배선 재료 및 타겟재 KR100666906B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00037570 2004-02-16
JP2004037570A JP4390260B2 (ja) 2004-02-16 2004-02-16 高耐熱性アルミニウム合金配線材料及びターゲット材

Publications (2)

Publication Number Publication Date
KR20060002987A KR20060002987A (ko) 2006-01-09
KR100666906B1 true KR100666906B1 (ko) 2007-01-11

Family

ID=34857777

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057019424A KR100666906B1 (ko) 2004-02-16 2005-02-15 고내열성 알루미늄 합금 배선 재료 및 타겟재

Country Status (5)

Country Link
JP (1) JP4390260B2 (zh)
KR (1) KR100666906B1 (zh)
CN (1) CN100428367C (zh)
TW (1) TWI312011B (zh)
WO (1) WO2005078739A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4727342B2 (ja) 2004-09-15 2011-07-20 ソニー株式会社 画像処理装置、画像処理方法、画像処理プログラム及びプログラム格納媒体
JP2012243878A (ja) * 2011-05-17 2012-12-10 Kobe Steel Ltd 半導体電極構造
JP2012243877A (ja) * 2011-05-17 2012-12-10 Kobe Steel Ltd 半導体電極構造
WO2015046144A1 (ja) * 2013-09-30 2015-04-02 日本軽金属株式会社 半導体素子、スパッタリングターゲット材及び半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA723663B (en) * 1971-06-07 1973-03-28 Southwire Co Aluminum nickel alloy electrical conductor
JPS62240739A (ja) * 1986-04-11 1987-10-21 Nippon Mining Co Ltd 半導体配線材料用ｂ、ｃ、ｎ含有アルミニウム合金
JP4783525B2 (ja) * 2001-08-31 2011-09-28 株式会社アルバック 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット
JP2003089864A (ja) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd アルミニウム合金薄膜及びその薄膜を有する配線回路並びにその薄膜を形成するターゲット材

Also Published As

Publication number Publication date
CN100428367C (zh) 2008-10-22
KR20060002987A (ko) 2006-01-09
WO2005078739A1 (ja) 2005-08-25
TW200530407A (en) 2005-09-16
JP4390260B2 (ja) 2009-12-24
CN1788322A (zh) 2006-06-14
TWI312011B (en) 2009-07-11
JP2005228656A (ja) 2005-08-25

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