KR100637947B1 - 데이터의 순차적 니블 버스트 오더링메모리 장치 및 그 방법 - Google Patents

데이터의 순차적 니블 버스트 오더링메모리 장치 및 그 방법 Download PDF

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Publication number
KR100637947B1
KR100637947B1 KR1020047008745A KR20047008745A KR100637947B1 KR 100637947 B1 KR100637947 B1 KR 100637947B1 KR 1020047008745 A KR1020047008745 A KR 1020047008745A KR 20047008745 A KR20047008745 A KR 20047008745A KR 100637947 B1 KR100637947 B1 KR 100637947B1
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South Korea
Prior art keywords
address
memory
word
read
bits
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Korean (ko)
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KR20040063985A (ko
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제프리더블유. 잔젠
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미크론 테크놀로지,인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/103—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers
    • G11C7/1033—Read-write modes for single port memories, i.e. having either a random port or a serial port using serially addressed read-write data registers using data registers of which only one stage is addressed for sequentially outputting data from a predetermined number of stages, e.g. nibble read-write mode
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1020047008745A 2001-12-07 2002-12-05 데이터의 순차적 니블 버스트 오더링메모리 장치 및 그 방법 Expired - Fee Related KR100637947B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/008,710 US6775759B2 (en) 2001-12-07 2001-12-07 Sequential nibble burst ordering for data
US10/008,710 2001-12-07
PCT/US2002/038572 WO2003050690A2 (en) 2001-12-07 2002-12-05 Sequential nibble burst ordering for data

Publications (2)

Publication Number Publication Date
KR20040063985A KR20040063985A (ko) 2004-07-15
KR100637947B1 true KR100637947B1 (ko) 2006-10-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047008745A Expired - Fee Related KR100637947B1 (ko) 2001-12-07 2002-12-05 데이터의 순차적 니블 버스트 오더링메모리 장치 및 그 방법

Country Status (8)

Country Link
US (3) US6775759B2 (enExample)
EP (1) EP1454322A2 (enExample)
JP (1) JP4238136B2 (enExample)
KR (1) KR100637947B1 (enExample)
CN (1) CN100517497C (enExample)
AU (1) AU2002362048A1 (enExample)
TW (1) TWI226535B (enExample)
WO (1) WO2003050690A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
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US7003643B1 (en) 2001-04-16 2006-02-21 Micron Technology, Inc. Burst counter controller and method in a memory device operable in a 2-bit prefetch mode
US6775759B2 (en) * 2001-12-07 2004-08-10 Micron Technology, Inc. Sequential nibble burst ordering for data
US7142461B2 (en) * 2002-11-20 2006-11-28 Micron Technology, Inc. Active termination control though on module register
US6967896B2 (en) * 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US6982892B2 (en) * 2003-05-08 2006-01-03 Micron Technology, Inc. Apparatus and methods for a physical layout of simultaneously sub-accessible memory modules
JP4153882B2 (ja) * 2004-02-17 2008-09-24 株式会社東芝 半導体集積回路装置
US7236385B2 (en) * 2004-06-30 2007-06-26 Micron Technology, Inc. Memory architecture
US7519877B2 (en) 2004-08-10 2009-04-14 Micron Technology, Inc. Memory with test mode output
US20060161743A1 (en) * 2005-01-18 2006-07-20 Khaled Fekih-Romdhane Intelligent memory array switching logic
US20060171234A1 (en) * 2005-01-18 2006-08-03 Liu Skip S DDR II DRAM data path
US20060171233A1 (en) * 2005-01-18 2006-08-03 Khaled Fekih-Romdhane Near pad ordering logic
KR100596799B1 (ko) * 2005-04-27 2006-07-04 주식회사 하이닉스반도체 메모리 장치용 입력 데이타 분배 장치
US7457901B2 (en) * 2005-07-05 2008-11-25 Via Technologies, Inc. Microprocessor apparatus and method for enabling variable width data transfers
US7441064B2 (en) 2005-07-11 2008-10-21 Via Technologies, Inc. Flexible width data protocol
US7502880B2 (en) * 2005-07-11 2009-03-10 Via Technologies, Inc. Apparatus and method for quad-pumped address bus
US7590787B2 (en) * 2005-07-19 2009-09-15 Via Technologies, Inc. Apparatus and method for ordering transaction beats in a data transfer
US7444472B2 (en) 2005-07-19 2008-10-28 Via Technologies, Inc. Apparatus and method for writing a sparsely populated cache line to memory
KR100759780B1 (ko) * 2006-09-05 2007-09-20 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 데이터 입출력 방법
US9009570B2 (en) * 2012-06-07 2015-04-14 Micron Technology, Inc. Integrity of an address bus
KR102468764B1 (ko) * 2017-12-19 2022-11-18 에스케이하이닉스 주식회사 반도체 장치
US10747466B2 (en) * 2018-12-28 2020-08-18 Texas Instruments Incorporated Save-restore in integrated circuits

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5659713A (en) 1992-04-24 1997-08-19 Digital Equipment Corporation Memory stream buffer with variable-size prefetch depending on memory interleaving configuration
JP2982618B2 (ja) 1994-06-28 1999-11-29 日本電気株式会社 メモリ選択回路
JP2817672B2 (ja) 1995-08-11 1998-10-30 日本電気株式会社 半導体メモリ
JPH09223389A (ja) 1996-02-15 1997-08-26 Mitsubishi Electric Corp 同期型半導体記憶装置
US5953278A (en) 1996-07-11 1999-09-14 Texas Instruments Incorporated Data sequencing and registering in a four bit pre-fetch SDRAM
US5784705A (en) * 1996-07-15 1998-07-21 Mosys, Incorporated Method and structure for performing pipeline burst accesses in a semiconductor memory
US5802005A (en) * 1996-09-23 1998-09-01 Texas Instruments Incorporated Four bit pre-fetch sDRAM column select architecture
JPH1139871A (ja) 1997-01-10 1999-02-12 Mitsubishi Electric Corp 同期型半導体記憶装置
JPH10334659A (ja) 1997-05-29 1998-12-18 Mitsubishi Electric Corp 同期型半導体記憶装置
US5996043A (en) * 1997-06-13 1999-11-30 Micron Technology, Inc. Two step memory device command buffer apparatus and method and memory devices and computer systems using same
US6115321A (en) * 1997-06-17 2000-09-05 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
US6240047B1 (en) 1998-07-06 2001-05-29 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
KR100306966B1 (ko) 1998-08-04 2001-11-30 윤종용 동기형버스트반도체메모리장치
US6137735A (en) * 1998-10-30 2000-10-24 Mosaid Technologies Incorporated Column redundancy circuit with reduced signal path delay
US6172893B1 (en) * 1999-01-05 2001-01-09 Micron Technology, Inc. DRAM with intermediate storage cache and separate read and write I/O
US6081479A (en) * 1999-06-15 2000-06-27 Infineon Technologies North America Corp. Hierarchical prefetch for semiconductor memories
JP4756724B2 (ja) 2000-02-24 2011-08-24 エルピーダメモリ株式会社 半導体記憶装置
US6658523B2 (en) * 2001-03-13 2003-12-02 Micron Technology, Inc. System latency levelization for read data
US6779074B2 (en) * 2001-07-13 2004-08-17 Micron Technology, Inc. Memory device having different burst order addressing for read and write operations
US6775759B2 (en) * 2001-12-07 2004-08-10 Micron Technology, Inc. Sequential nibble burst ordering for data

Also Published As

Publication number Publication date
CN1618104A (zh) 2005-05-18
TW200300882A (en) 2003-06-16
EP1454322A2 (en) 2004-09-08
US6775759B2 (en) 2004-08-10
US20030110348A1 (en) 2003-06-12
KR20040063985A (ko) 2004-07-15
TWI226535B (en) 2005-01-11
JP2005512262A (ja) 2005-04-28
AU2002362048A1 (en) 2003-06-23
US20040162935A1 (en) 2004-08-19
JP4238136B2 (ja) 2009-03-11
US20060190677A1 (en) 2006-08-24
US7340584B2 (en) 2008-03-04
WO2003050690A2 (en) 2003-06-19
US7085912B2 (en) 2006-08-01
AU2002362048A8 (en) 2003-06-23
WO2003050690A3 (en) 2004-01-29
CN100517497C (zh) 2009-07-22

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