KR100630728B1 - 반사 포토마스크 및 그 제조 방법 - Google Patents

반사 포토마스크 및 그 제조 방법 Download PDF

Info

Publication number
KR100630728B1
KR100630728B1 KR1020040115074A KR20040115074A KR100630728B1 KR 100630728 B1 KR100630728 B1 KR 100630728B1 KR 1020040115074 A KR1020040115074 A KR 1020040115074A KR 20040115074 A KR20040115074 A KR 20040115074A KR 100630728 B1 KR100630728 B1 KR 100630728B1
Authority
KR
South Korea
Prior art keywords
ion
euv
reflective layer
reflective
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020040115074A
Other languages
English (en)
Korean (ko)
Other versions
KR20060076599A (ko
Inventor
김석필
송이헌
김원주
장승혁
김훈
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020040115074A priority Critical patent/KR100630728B1/ko
Priority to CN200510124778.4A priority patent/CN1797192A/zh
Priority to JP2005376492A priority patent/JP2006191076A/ja
Priority to US11/319,725 priority patent/US20060141370A1/en
Publication of KR20060076599A publication Critical patent/KR20060076599A/ko
Application granted granted Critical
Publication of KR100630728B1 publication Critical patent/KR100630728B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020040115074A 2004-12-29 2004-12-29 반사 포토마스크 및 그 제조 방법 Expired - Fee Related KR100630728B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020040115074A KR100630728B1 (ko) 2004-12-29 2004-12-29 반사 포토마스크 및 그 제조 방법
CN200510124778.4A CN1797192A (zh) 2004-12-29 2005-11-15 反射光掩模及其制造方法
JP2005376492A JP2006191076A (ja) 2004-12-29 2005-12-27 反射フォトマスク及びその製造方法
US11/319,725 US20060141370A1 (en) 2004-12-29 2005-12-29 Photomasks and methods of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040115074A KR100630728B1 (ko) 2004-12-29 2004-12-29 반사 포토마스크 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20060076599A KR20060076599A (ko) 2006-07-04
KR100630728B1 true KR100630728B1 (ko) 2006-10-02

Family

ID=36612032

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040115074A Expired - Fee Related KR100630728B1 (ko) 2004-12-29 2004-12-29 반사 포토마스크 및 그 제조 방법

Country Status (4)

Country Link
US (1) US20060141370A1 (https=)
JP (1) JP2006191076A (https=)
KR (1) KR100630728B1 (https=)
CN (1) CN1797192A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2894346B1 (fr) * 2005-12-02 2012-03-30 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, a cavites absorbantes
JP5521714B2 (ja) * 2010-04-06 2014-06-18 凸版印刷株式会社 Ｅｕｖ用反射型マスク製造方法
KR101727783B1 (ko) * 2010-06-15 2017-04-17 칼 짜이스 에스엠테 게엠베하 Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법
DE102011003357A1 (de) * 2011-01-31 2012-08-02 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
WO2013156328A2 (en) * 2012-04-18 2013-10-24 Asml Netherlands B.V. Mask for lithographic apparatus and methods of inspection
TWI835896B (zh) * 2018-10-26 2024-03-21 美商應用材料股份有限公司 具有後側塗層的極紫外線掩模
CN114859651A (zh) * 2022-07-05 2022-08-05 上海传芯半导体有限公司 反射型掩模基板及制备方法、反射型掩模版及制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346352B1 (en) * 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
DE10134231B4 (de) * 2001-07-13 2006-06-14 Infineon Technologies Ag EUV-Reflektionsmaske
US20040159538A1 (en) * 2003-02-13 2004-08-19 Hans Becker Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank

Also Published As

Publication number Publication date
US20060141370A1 (en) 2006-06-29
CN1797192A (zh) 2006-07-05
JP2006191076A (ja) 2006-07-20
KR20060076599A (ko) 2006-07-04

Similar Documents

Publication Publication Date Title
US7960076B2 (en) Reflective-type mask
JP3239976B2 (ja) アライメントマーク、半導体装置の製造方法および半導体装置
JP5423236B2 (ja) 反射型マスクおよびその製造方法
US20050084768A1 (en) Attenuated phase shift mask for extreme ultraviolet lithography and method therefore
KR100604938B1 (ko) 극자외선 노광용 반사마스크 및 그 제조방법
US7090948B2 (en) Reflection mask and method for fabricating the reflection mask
US11829062B2 (en) EUV photo masks and manufacturing method thereof
CN104749871A (zh) 用于反射式光刻技术的掩模版、制作方法及其使用方法
US20060292459A1 (en) EUV reflection mask and method for producing it
US8163445B2 (en) Extreme ultraviolet mask and method for fabricating the same
KR100630728B1 (ko) 반사 포토마스크 및 그 제조 방법
US20030013216A1 (en) EUV reflection mask
US8906582B2 (en) Blank masks for extreme ultra violet lithography, methods of fabricating the same, and methods of correcting registration errors thereof
US7588867B2 (en) Reflection mask, use of the reflection mask and method for fabricating the reflection mask
KR20230011836A (ko) 극자외선 리소그래피용 펠리클 및 그 제조방법
JP6135105B2 (ja) 反射型マスクの製造方法
JPH0666251B2 (ja) Ｘ線マスクおよびその製造方法
US20090325081A1 (en) Exposure mask and manufacturing method of a semiconductor using the same
JP2009519593A (ja) 反射フォトリソグラフィーマスクおよびこのマスクの作製方法
CN114859651A (zh) 反射型掩模基板及制备方法、反射型掩模版及制备方法
KR101095042B1 (ko) Ｅｕｖ 마스크 및 그 제조방법
KR20090103629A (ko) 극자외선 리소그래피에 사용되는 마스크 및 제조 방법
KR20110091217A (ko) Ｅｕｖ 마스크 및 그 형성방법
KR101097026B1 (ko) Ｅｕｖ 마스크 및 그 형성방법
JP2012212787A (ja) 反射型マスクの製造方法、反射型マスク用イオンビーム装置、および反射型マスク

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20090927

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20090927

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000