JP2006191076A - 反射フォトマスク及びその製造方法 - Google Patents

反射フォトマスク及びその製造方法 Download PDF

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Publication number
JP2006191076A
JP2006191076A JP2005376492A JP2005376492A JP2006191076A JP 2006191076 A JP2006191076 A JP 2006191076A JP 2005376492 A JP2005376492 A JP 2005376492A JP 2005376492 A JP2005376492 A JP 2005376492A JP 2006191076 A JP2006191076 A JP 2006191076A
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JP
Japan
Prior art keywords
ion
reflective
reflective photomask
reflective layer
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005376492A
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English (en)
Japanese (ja)
Other versions
JP2006191076A5 (https=
Inventor
Suk-Pil Kim
錫 必 金
I-Hun Song
宋　利　憲
Woo-Joo Kim
元 柱 金
Seung-Hyuk Chang
丞 ▲かく▼ 張
Hoon Kim
勳 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006191076A publication Critical patent/JP2006191076A/ja
Publication of JP2006191076A5 publication Critical patent/JP2006191076A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005376492A 2004-12-29 2005-12-27 反射フォトマスク及びその製造方法 Withdrawn JP2006191076A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040115074A KR100630728B1 (ko) 2004-12-29 2004-12-29 반사 포토마스크 및 그 제조 방법

Publications (2)

Publication Number Publication Date
JP2006191076A true JP2006191076A (ja) 2006-07-20
JP2006191076A5 JP2006191076A5 (https=) 2009-02-12

Family

ID=36612032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005376492A Withdrawn JP2006191076A (ja) 2004-12-29 2005-12-27 反射フォトマスク及びその製造方法

Country Status (4)

Country Link
US (1) US20060141370A1 (https=)
JP (1) JP2006191076A (https=)
KR (1) KR100630728B1 (https=)
CN (1) CN1797192A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009517874A (ja) * 2005-12-02 2009-04-30 コミシリア ア レネルジ アトミック 吸収性の空洞を有する極紫外線フォトリソグラフィマスク
JP2011222612A (ja) * 2010-04-06 2011-11-04 Toppan Printing Co Ltd Ｅｕｖ用反射型マスク及びｅｕｖ用反射型マスク製造方法
JP2022505688A (ja) * 2018-10-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド 裏側コーティングを有する極紫外線マスク

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101727783B1 (ko) * 2010-06-15 2017-04-17 칼 짜이스 에스엠테 게엠베하 Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법
DE102011003357A1 (de) * 2011-01-31 2012-08-02 Carl Zeiss Smt Gmbh Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv
WO2013156328A2 (en) * 2012-04-18 2013-10-24 Asml Netherlands B.V. Mask for lithographic apparatus and methods of inspection
CN114859651A (zh) * 2022-07-05 2022-08-05 上海传芯半导体有限公司 反射型掩模基板及制备方法、反射型掩模版及制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346352B1 (en) * 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
DE10134231B4 (de) * 2001-07-13 2006-06-14 Infineon Technologies Ag EUV-Reflektionsmaske
US20040159538A1 (en) * 2003-02-13 2004-08-19 Hans Becker Photo mask blank, photo mask, method and apparatus for manufacturing of a photo mask blank

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009517874A (ja) * 2005-12-02 2009-04-30 コミシリア ア レネルジ アトミック 吸収性の空洞を有する極紫外線フォトリソグラフィマスク
JP2011222612A (ja) * 2010-04-06 2011-11-04 Toppan Printing Co Ltd Ｅｕｖ用反射型マスク及びｅｕｖ用反射型マスク製造方法
JP2022505688A (ja) * 2018-10-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド 裏側コーティングを有する極紫外線マスク

Also Published As

Publication number Publication date
US20060141370A1 (en) 2006-06-29
CN1797192A (zh) 2006-07-05
KR100630728B1 (ko) 2006-10-02
KR20060076599A (ko) 2006-07-04

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