KR100630647B1 - 박막형성장치, 및 질화텅스텐 박막 제조방법 - Google Patents

박막형성장치, 및 질화텅스텐 박막 제조방법 Download PDF

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Publication number
KR100630647B1
KR100630647B1 KR1019990062682A KR19990062682A KR100630647B1 KR 100630647 B1 KR100630647 B1 KR 100630647B1 KR 1019990062682 A KR1019990062682 A KR 1019990062682A KR 19990062682 A KR19990062682 A KR 19990062682A KR 100630647 B1 KR100630647 B1 KR 100630647B1
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South Korea
Prior art keywords
thin film
gas
film forming
source gas
tungsten
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KR1019990062682A
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English (en)
Korean (ko)
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KR20000052580A (ko
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하라다마사미찌
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가부시키가이샤 아루박
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019990062682A 1999-01-22 1999-12-27 박막형성장치, 및 질화텅스텐 박막 제조방법 Expired - Fee Related KR100630647B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11013791A JP2000212749A (ja) 1999-01-22 1999-01-22 薄膜形成装置、及び窒化タングステン薄膜製造方法
JP99-13791 1999-01-22

Publications (2)

Publication Number Publication Date
KR20000052580A KR20000052580A (ko) 2000-08-25
KR100630647B1 true KR100630647B1 (ko) 2006-10-02

Family

ID=11843083

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990062682A Expired - Fee Related KR100630647B1 (ko) 1999-01-22 1999-12-27 박막형성장치, 및 질화텅스텐 박막 제조방법

Country Status (6)

Country Link
US (2) US6312761B1 (enExample)
EP (1) EP1024210B1 (enExample)
JP (1) JP2000212749A (enExample)
KR (1) KR100630647B1 (enExample)
DE (1) DE60027935T2 (enExample)
TW (1) TW579393B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101224975B1 (ko) * 2009-03-10 2013-01-22 미쯔이 죠센 가부시키가이샤 원자층 퇴적 장치 및 박막 형성 방법

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635570B1 (en) * 1999-09-30 2003-10-21 Carl J. Galewski PECVD and CVD processes for WNx deposition
JP2002085950A (ja) * 2000-09-18 2002-03-26 Horiba Ltd 流体混合装置
WO2004061154A1 (ja) 2002-12-27 2004-07-22 Ulvac Inc. 窒化タングステン膜の成膜方法
CN100370585C (zh) 2004-04-12 2008-02-20 株式会社爱发科 隔离膜的形成方法及电极膜的形成方法
US7420227B2 (en) * 2005-06-22 2008-09-02 National Chiao Tung University Cu-metalized compound semiconductor device
US8148564B2 (en) * 2006-08-30 2012-04-03 Wayne State University Compounds for forming metal nitrides
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
EP2935646A4 (en) * 2012-12-21 2016-10-12 Prasad Narhar Gadgil METHOD FOR LOW TEMPERATURE DEPOSITION OF CERAMIC THIN FILMS
CN109072427B (zh) * 2016-03-25 2020-10-13 应用材料公司 用于高温处理的腔室衬垫
CN114850003B (zh) * 2021-02-03 2023-06-27 芝浦机械电子装置株式会社 加热处理装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131511A (ja) * 1983-01-17 1984-07-28 Zenko Hirose アモルフアスシリコン膜の成膜方法
JPS62116770A (ja) * 1985-11-15 1987-05-28 Canon Inc 成膜装置
JPH03255624A (ja) * 1990-03-05 1991-11-14 Nec Corp 半導体装置の製造方法
KR930001300A (ko) * 1991-06-10 1993-01-16 김광호 화학 기상 박막 형성 방법 및 그 장치
JPH07153704A (ja) * 1993-11-29 1995-06-16 Anelva Corp 薄膜形成方法および薄膜形成装置
KR960039102A (ko) * 1995-04-20 1996-11-21 이노우에 아키라 샤워헤드 및 이를 이용한 성막장치
JPH08325737A (ja) * 1995-05-30 1996-12-10 Anelva Corp 真空処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2859632B2 (ja) * 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
US5470800A (en) * 1992-04-03 1995-11-28 Sony Corporation Method for forming an interlayer film
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59131511A (ja) * 1983-01-17 1984-07-28 Zenko Hirose アモルフアスシリコン膜の成膜方法
JPS62116770A (ja) * 1985-11-15 1987-05-28 Canon Inc 成膜装置
JPH03255624A (ja) * 1990-03-05 1991-11-14 Nec Corp 半導体装置の製造方法
KR930001300A (ko) * 1991-06-10 1993-01-16 김광호 화학 기상 박막 형성 방법 및 그 장치
JPH07153704A (ja) * 1993-11-29 1995-06-16 Anelva Corp 薄膜形成方法および薄膜形成装置
KR960039102A (ko) * 1995-04-20 1996-11-21 이노우에 아키라 샤워헤드 및 이를 이용한 성막장치
JPH08325737A (ja) * 1995-05-30 1996-12-10 Anelva Corp 真空処理装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
03255624 *
08325737 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101224975B1 (ko) * 2009-03-10 2013-01-22 미쯔이 죠센 가부시키가이샤 원자층 퇴적 장치 및 박막 형성 방법

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Publication number Publication date
US6312761B1 (en) 2001-11-06
US20020000199A1 (en) 2002-01-03
JP2000212749A (ja) 2000-08-02
EP1024210A1 (en) 2000-08-02
TW579393B (en) 2004-03-11
KR20000052580A (ko) 2000-08-25
EP1024210B1 (en) 2006-05-17
DE60027935D1 (de) 2006-06-22
DE60027935T2 (de) 2007-04-26

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